# IGBT Module, PIM Three Phase Input Rectifier, 100 A, 1.75 V, 515 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726155/)

**URL**: https://novapart.co/products/FP100R12KT4BOSA1/igbt-module-pim-three-phase-input-rectifier-100-a
**SKU**: FP100R12KT4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €90.7200
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:515W; Collector Emitter Voltage V(br)ceo:1.2kV; Transist

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPIM 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 515W |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 100A |
| Power Dissipation Pd | 515W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726155/)

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FP100R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

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## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

**初步数据 Preliminary�Data** 

|技术信息/TechnicalInformation<br>FP100R12KT4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|EconoPIM™3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode<br>EconoPIM™3modulewithtrench/fieldstopIGBT4andEmitterControlled4diode<br>preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>515<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,20<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 3,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,30<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,27<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, di/dt = 3000 A/µs (Tvj= 150°C)<br>RGon= 1,6Ω<br>Eon<br>5,50<br>8,50<br>9,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 1,6Ω<br>Eoff<br>5,50<br>8,50<br>9,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,29<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,13<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FP100R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|100|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1550<br>1500|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||115<br>125<br>130||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 100 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||9,50<br>17,5<br>20,5||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||3,50<br>6,00<br>7,50||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,50|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,225||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **二极管,整流器�/�Diode,�Rectifier 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|最大正向均方根电流(每芯片)<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|100|||A|
|最大整流器输出均方根电流<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|150|||A|
|正向浪涌电流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|1150<br>880|||A<br>A|
|I2t-值<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|6600<br>3850|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|Tvj= 150°C, IF= 100 A|VF||1,00||V|
|反向电流<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,40|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,18||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



|preparedby:AS|dateofpublication:2013-11-04|
|---|---|
|approvedby:RS|revision:2.0|



2 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FP100R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�制动-斩波器�/�IGBT,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FP100R12KT4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,制动-斩波器/IGBT,Brake-Chopper**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>280<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 1,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,38<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>4,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,80<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,10<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 15Ω<br>Eon<br>5,70<br>7,70<br>8,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 15Ω<br>Eoff<br>2,80<br>4,30<br>4,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>180<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,54<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,245<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



3 

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FP100R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

**初步数据 Preliminary�Data** 

## **二极管，制动-斩波器�/�Diode,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|25|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>80,0|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,25|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||39,0<br>40,0<br>41,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,40<br>4,10<br>4,40||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,90<br>1,50<br>1,70||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||1,35|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,61||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor** 

## **特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�AS date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0 

4 

IGBT-模块 IGBT-modules 

## FP100R12KT4 

## **初步数据** 

|#R_<br>| Module|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>E44 (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3||kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0||mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 200<br>typ.<br>max.<br>~~ee~~||mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|杂散电感,模块||LsCE||40||nH|
|最大结温<br>Maximum junction temperature|aS3S 2)-4 WEB /inverter, brake-chopper<br>Ties / rectifier|Tvj max|||175<br>150|°C<br>°C|
|在开关状态下温度<br>Temperature under switching conditions|aE BS ll2)-H WEE /inverter, brake-chopper<br>Ties / rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|储存温度<br>模块安装的安装扭距<br>~~Storage temperature~~<br>Mounting torque for modul mounting|~~ee ~~<br>$e MS RIAN<br>WASH TRR<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|重量<br>Weight||G||300||g|



5 

## IGBT-模块 #£ IGBT-modules 7 {3B / Technical Information FP100R12KT4 

## **初步数据** 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>200 a | y v 200 se |<br>Tvj = 25°C VGE = 19V<br>180 Tvj = 125°C 180 VGE = 17V<br>E Tvj = 150°C OL) F VGE = 15V oR<br>VGE = 13V<br>160 ee ee 160 | VGE = 11V 77eaae<br>VGE =   9V<br>140 Pp ee 140 JE S e fh<br>eee /<br>120 [i ee eee 120 sean<br>eeewe /; ; }<br>100 100<br>80 ae ee ee 80 ee<br>eee eee Cees<br>60 ee 60<br>ee eee ee<br>een¢ canei /<br>40 40<br>20 20<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>eV tStE IGBT, HAAS (BZ) FFA IGBT, HAAS ( HZ!)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =fil C)<br>VCE =20V VGE =+15V,R Gon =16 Ω ,R Goff =16 Ω ,V CE =600V<br>200 —— 30 _ —_—_—_—_ |__| | | | | sl<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 Tvj = 125°C ee ee Eoff, Tvj = 125°C Sees<br>Tvj = 150°C fe | Eon, Tvj = 150°C Pt<br>/ ad | 25 ii Eoff, Tvj = 150°C esa eeee eeee eeeeeeee<br>160<br>140 Pf | | ep“ a ee aeda ee ee eee<br>20<br>aee<br>120 aeeee ee ee<br>100 /\!i 15 aa eeee ee ee ee ee ee ee eee<br>aaa eeea esee e e aa A eeee ee<br>80<br>10 aa eyee ee 2 a aeeee ee<br>j a ee<br>60<br>a A<br>a ee>ee ee ee ee<br>a ee<br>40<br>; 5 a ssee<br>20 a a a a ee ee ee ee<br>0 L eee 0 ee ee ee ee ee e e<br>5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-modules 

## FP100R12KT4 

## **初步数据** 

**==> picture [486 x 599] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon ={(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1| C =100A,V CE =600V<br>25 PE orsyetblL LLL 1 OOo<br>I Eon, Tvj = 125°C a H—L ZthJC : IGBT ER<br>I EEoffon, T, Tvjvj = 125°C = 150°C a eI<br>I Eoff, Tvj = 150°C Ho | fT PCIE CT<br>20<br>a ee<br>PT TT . ae ee<br>e e e eee YX<br>FEEEEEE EERE CEE 0,1 Le.<br>15 annaP| [| | ft f peepanoy fy ye yt yt atta 2|oe oo<br>a ed | ot AEn<br>10 eeePPP rPePe eet eeer ey fy LATTEI, ETT<br>YT ee /<br>| | a4A-tede-FrtcF erratatreet T L 0,01 ©/ ee<br>pepe aSSS SEE SR SEE<br>5 rit; ee ee |<br>rit; tT ey ey ey ry a ee Pe i:    1    2    3    4<br>a ||<br>ri[K/W]:   0,0174   0,0957   0,0928   0,0841<br>τ i[s]:    0,01    0,02    0,05    0,1<br>FEE EEE EEEee EEE EE | ill<br>PE o ol<br>0 0,001<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>R22FR IGBT, #228 ( RBSOA ) EASE — RSwe ( aA)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE =+15V,R Goff =16 Ω ,T vj =150°C<br>220 200<br>Tvj = 25°C<br>200 180 Tvj = 125°C<br>PEP EEE F Tvj = 150°C e<br>180<br>160<br>IC, Modul<br>160 IC, Chip<br>140<br>140<br>120<br>120<br>100<br>100<br>80<br>80<br>60<br>60<br>40<br>4020 PETEPEP TTPP}EE EEN 20 LLL p erer<br>0 0 ae tT |<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


7 

IGBT-模块 IGBT-modules 

## FP100R12KT4 

## **初步数据** 

**==> picture [485 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon JN, Ω ,V CE =600V IF = TOO A.V CE = 600 V<br>10 10<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>9 FeL Erec, Tvj = 150°C L 9 f Erec, Tvj = 150°C e<br>8 8<br>7 7<br>6 Pt. TEE} 6 LEE<br> a prt<br>5 5<br>COPE] aE<br>4 eee 4 eee<br>3 ee 3 ee<br>2 CVECEEEEE) — 2 COCeeeecceerrree<br>1 1<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


> IFF =f(V F)) 

**==> picture [486 x 280] intentionally omitted <==**

**----- Start of picture text -----**<br>
ZthJC =f (t) IFF =f(V F))<br>1 200<br>$ ZthJC : Diode F SIP Tvj = 25°C |<br>=eee eeeSee esl Tiee eee 180 —| Tvj = 150°C Till] q]<br>YTaPIETTT OEACI TT FT |  TTT TT TT TTT 160 TTTPTT D ILLPYLLL AE<br>140<br>0,1 Zoe |<br>SEEPtSEH Se 120 PET] | TLE Ly ARE:<br>rTYTPT[YTVELTATTTTTTTTTTTT TTEETTTT TTTTTTTT] 100 PET] | TL ELL RAL<br>80<br>0,01<br>PT T T TTTT CE TTTTTTET TTT TTT TTTTTT 6040 PET TL | | AACE! EE<br>i:    1    2    3    4<br>PT TT r τ ii[K/W]:   [s]:    0,03   0,01   0,165   0,02    0,16   0,05    T 0,145   0,1    20 ZY<br>0,001 LM orm } SL 0 ee [Y][E]<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br> [K/W]thJC  [A]IF<br>Z<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FP100R12KT4 

## **初步数据** 

**==> picture [486 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IF =f(V F)<br>VGE ts Vv<br>100 45<br>Tvj = 25°C Tvj = 25°C<br>90 F Tvj = 125°C 40 Tvj = 125°C<br>L Tvj = 150°C es] P Tvj = 150°C oe<br>80<br>35<br>70<br>30<br>60<br>25<br>pfpi BRRRREEEP Ane<br>50<br>Le 20 COCA yee<br>40<br>15<br>30<br>ae itt aT<br>i a 10 v/<br>2010 5 ite<br>0 0<br>PLATT TT Li [bbe] a,<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
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9 

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10 

IGBT-模块 IGBT-modules 

## FP100R12KT4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 

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11 



## Links

- [View this product on Novapart](https://novapart.co/products/FP100R12KT4BOSA1/igbt-module-pim-three-phase-input-rectifier-100-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fp100r12kt4bosa1/igbt-module-n-ch-1-2kv-100a/dp/2726155)
---

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