# IGBT Module, PIM Three Phase Input Rectifier, 100 A, 1.75 V, 515 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2781238/)

**URL**: https://novapart.co/products/FP100R12KT4B11BOSA1/igbt-module-pim-three-phase-input-rectifier-100-a
**SKU**: FP100R12KT4B11BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €85.5900
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:515W; Collector Emitter Voltage V(br)ceo:1.2kV; Transist

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPIM 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 515W |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 100A |
| Power Dissipation Pd | 515W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781238/)

IGBT-模块 IGBT-modules 

## FP100R12KT4_B11 

VCES = 1200V IC nom = 100A / ICRM = 200A 

- **典型应用** • 辅助逆变器 • 电机传动 • 伺服驱动器 

- 

- 

- 

## **电气特性** 

- 低开关损耗 

- T yop = 

- • VCEsat • 1K V CEsat 

- 

- T yop = 

- • VCEsat with • Low V CEsat 

## **机械特性** 

- 高功率循环和温度循环能力 

- • 集成NTC温度传感器 • 铜基板 

- 

- 标封装 

- 

- 

- 

- 

- 

1 

技术信息�/�Technical�Information IGBT-模块 IGBT-modules FP100R12KT4_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FP100R12KT4_B11<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-16<br>revision:3.0<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>515<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 3,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,30<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,27<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, di/dt = 3000 A/µs (Tvj= 150°C)<br>RGon= 1,6Ω<br>Eon<br>5,50<br>8,50<br>9,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 1,6Ω<br>Eoff<br>5,50<br>8,50<br>9,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,29<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,13<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

IGBT-模块 IGBT-modules FP100R12KT4_B11 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|100|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1550<br>1500|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||115<br>125<br>130||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 100 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||9,50<br>17,5<br>20,5||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||3,50<br>6,00<br>7,50||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,50|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,225||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **二极管,整流器�/�Diode,�Rectifier 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|最大正向均方根电流(每芯片)<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|100|||A|
|最大整流器输出均方根电流<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|150|||A|
|正向浪涌电流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|1150<br>880|||A<br>A|
|I2t-值<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|6600<br>3850|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|Tvj= 150°C, IF= 100 A|VF||1,00||V|
|反向电流<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,40|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,18||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



|preparedby:AS|dateofpublication:2013-10-16|
|---|---|
|approvedby:RS|revision:3.0|



3 

IGBT-模块 IGBT-modules FP100R12KT4_B11 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�制动-斩波器�/�IGBT,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FP100R12KT4_B11<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-16<br>revision:3.0<br>**IGBT,制动-斩波器/IGBT,Brake-Chopper**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>280<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 1,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,38<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>4,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,80<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,10<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V<br>RGon= 15Ω<br>Eon<br>5,70<br>7,70<br>8,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V<br>RGoff= 15Ω<br>Eoff<br>2,80<br>4,30<br>4,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>180<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,54<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,245<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



4 

IGBT-模块 IGBT-modules FP100R12KT4_B11 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管，制动-斩波器�/�Diode,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|25|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>80,0|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||39,0<br>40,0<br>41,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,40<br>4,10<br>4,40||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,90<br>1,50<br>1,70||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||1,35|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,61||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor** 

## **特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�AS date�of�publication:�2013-10-16 approved�by:�RS revision:�3.0 

5 

IGBT-模块 IGBT-modules 

## FP100R12KT4_B11 

|#R_<br>| Module|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>E44 (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3||kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0||mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 200<br>typ.<br>max.<br>~~ee~~||mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|杂散电感,模块||LsCE||40||nH|
|模块引线电阻,端子-芯片<br>最大结温<br>terminals ~~- chip~~<br>Maximum junction temperature|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>aE BS<br>ll2)-H WEE /inverter, brake-chopper<br>Ties / rectifier|RCC'+EE'<br>RAA'+CC'<br>4,00<br>3,00<br>Tvj max<br>175<br>150<br>~~tt ff~~||||mΩ<br>°C<br>°C|
|在开关状态下温度<br>Temperature under switching conditions|aS3S 2)-4 WEB /inverter, brake-chopper<br>Ties / rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|储存温度<br>模块安装的安装扭距<br>~~Storage temperature~~<br>Mounting torque for modul mounting|~~ee ~~<br>$Ree MS~~RIAN~~<br>WAFHT<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|重量<br>Weight||G||300||g|



6 

## & / Technical Information 

## IGBT-模块 IGBT-modules 

## FP100R12KT4_B11 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>200 a | y vo 200 es<br>Tvj = 25°C VGE = 19V<br>180 Tvj = 125°C 180 B VGE = 17V oe<br>E Tvj = 150°C LS) VGE = 15V |<br>VGE = 13V<br>160 Pe 160 VGE = 11V i7ceann<br>VGE =   9V<br>[E] [e]<br>140 140<br>Pt | py [ye]<br>120 eee 120 /<br>[gs eee eee eae<br>100 eaeaf 100 eeeV’ f  eee.<br>80 80<br>ae eee ee eee Zee<br>60 ee 60<br>¢ ee ee<br>40 40<br>ee ee ee i /<br>20 20<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feFStt IGBT, HaseS (FAA) FFHIRE IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =16 Ω ,R Goff =16 Ω ,V CE =600V<br>200 30<br>-—_—_— (_HF<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 F Tvj = 125°C t | i Eoff, Tvj = 125°C ry a ee<br>Tvj = 150°C Eon, Tvj = 150°C<br>/ adfe 25 |i Eoff, Tvj = 150°C aepTee ee<br>160<br>140 a a<br>P| | | |ye) E poS<br>20<br>a eees ZT<br>po<br>120<br>/!a poYO<br>100 15 a ee es<br>aa eeA ee ee<br>ee ee a)<br>po<br>80<br>aeya<br>po<br>10<br>60 / aAe<br>a ee<br>40 aa 2eeee ee ee<br>j 5 a a ee<br>20 Za a a ee ee ee ee<br>0 L woe 0 es ee ee ee ee ee ee e<br>5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


7 

## IGBT-模块 IGBT-modules 

## FP100R12KT4_B11 

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Eon ={(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1| C =100A,V CE =600V<br>25 eee 1 Leea<br>i Eon, Tvj = 125°C a HH—E ZthJC : IGBT E<br>I Eoff, Tvj = 125°C HH} tH<br>Eon, Tvj = 150°C<br>L a Ee<br>Eoff, Tvj = 150°C<br>20 a Hott | | tel a<br>ee<br>c a ee<br>e e e eee YX<br>FCEEEE EE EEEREESE 0,1 .<br>15 P|anna| | [| fl ee poeanyt tt Ptea 2|tie<br>a ed | ot AEn<br>a TAU ETI, ETT<br>10 eeePP eer ETT ET ee / /<br>| A-tede-Frtc tree TL 0,01 © ee<br>pppee eee eeaieree ee |<br>5<br>eee ee |||i<br>i:    1    2    3    4<br>a a PT ri[K/W]:   0,0174   0,0957   0,0928   0,0841    till<br>τ i[s]:    0,01    0,02    0,05    0,1<br>REE EEE EEE Er EEE<br>PE o cc<br>0 0,001<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RRSR IGBT, #28 ( RBSOA ) EARS RSS ( HA)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE =+15V,R Goff =1.6 Ω ,T vj =150°C<br>220 200<br>Tvj = 25°C<br>200 180 Tvj = 125°C<br>PETE F Tvj = 150°C e<br>180<br>160<br>IC, Modul<br>160 IC, Chip<br>140<br>140<br>120<br>120<br>100<br>100<br>80<br>80<br>60<br>60<br>40<br>40<br>20 PEE EEE Ee 20 PEL ey<br>an<br>0 PETE EIN, TY 0 | ere | EE | dd<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FP100R12KT4_B11 

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Erec =f(I F) Erec =f(R G)<br>RGon 6 Ω ,V CE =600V IF = T00A.V CE = 600 V<br>10 10<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>9 Erec, Tvj = 150°C 9 Erec, Tvj = 150°C<br>ee ee<br>8 8<br>7 7<br>6 Ene FTE] OLE 6  RR<br>a prt<br>5 5<br>PLT) Ue<br>4 Pier EEE 4 LEE EEPRT<br>3 ny ee ee ee 3 eee<br>OEE PEELE EEE EE EE<br>2 2 LTTE<br>1 7 TTT [TEEPE)] 1<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>EAS RB ees FOmEst hE Bis ( BB)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJC =f (t) IF =f(V F)<br>1 (e ZthJC : Diode ne 200 —<—<— Tvj = 25°C 7<br>oo$F SIPTT 180 ( Tvj = 150°C Re ‘||<br>aPT Te FT TTT] 160 TTT D ILL LLL AE<br>PT CLUE PACE ETI ET 140 PTT PY<br>TEIN<br>0,1<br>ee LAE ETT<br>Aee ES SET 120 PET] | TLE Ly ARE<br>rTVCErT YTITALTTCCTTT TTT] 100 PET] | TL ELL RAL<br>PALAU TIE ET EA 80 PET] | TL EL LARt LE<br>0,01<br>De f<br>60<br>a ee ee el /<br>pePT ETT TTT] 40 Py TY TY EA1<br>i:    1    2    3    4<br>PTa a TT r τ ii[K/W]:   [s]:    ee 0,03   0,01   0,165   0,02    0,16   0,05    T 0,145   0,1    || 20 PET] ] LeaZY Eg<br>0,001 LU |im o SEE 0 EE er  YEE<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJC  [A]IF<br>Z<br>**----- End of picture text -----**<br>


9 

IGBT-模块 IGBT-modules 

## FP100R12KT4_B11 

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IC =f(V CE) IF =f(V F)<br>VGE Ls Vv<br>100 45<br>Tvj = 25°C Tvj = 25°C<br>90 F Tvj = 125°C 40 Tvj = 125°C<br>L Tvj = 150°C es] P Tvj = 150°C oe<br>80<br>35<br>70<br>30<br>60<br>25<br>50 pfpi BRRRREEEP Ane<br>Le 20 COCA yee<br>40<br>15<br>30<br>ae itt aT<br>i a 10 v/<br>2010 5 ite<br>0 0<br>Pl7A TTT TT | Libeea,<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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## 技术信息�/�Technical�Information 

IGBT-模块 IGBT-modules FP100R12KT4_B11 

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## **封装尺寸�/�package�outlines** 

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## IGBT-模块 IGBT-modules FP100R12KT4_B11 

## **使用条件和条款** 

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12 



## Links

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- [Supplier page](https://es.farnell.com/infineon/fp100r12kt4b11bosa1/igbt-module-n-ch-1-2kv-100a/dp/2781238)
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