# IGBT Module, PIM Three Phase Input Rectifier, 100 A, 1.45 V, 335 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726154/)

**URL**: https://novapart.co/products/FP100R06KE3BOSA1/igbt-module-pim-three-phase-input-rectifier-100-a
**SKU**: FP100R06KE3BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €66.7200
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:335W; Collector Emitter Voltage V(br)ceo:600V; Transistor

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPIM 3 |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 335W |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 100A |
| Power Dissipation Pd | 335W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Saturation Voltage Vce(On) | 1.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726154/)

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FP100R06KE3 

**==> picture [86 x 38] intentionally omitted <==**

EconoPIM™3�Modul�mit�schnellem�Trench/Feldstopp�IGBT³�und�Emitter�Controlled3�Diode� EconoPIM™3�module�with�fast�trench/fiedstop�IGBT³�and�Emitter�Controlled3�diode� 

|TechnischeInformation/TechnicalInformation<br>FP100R06KE3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|EconoPIM™3ModulmitschnellemTrench/FeldstoppIGBT³undEmitterControlled3Diode<br>EconoPIM™3modulewithfasttrench/fiedstopIGBT³andEmitterControlled3diode<br>preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>335<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,00<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,20<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,19<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 24Ω<br>td on<br>0,10<br>0,10<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 100 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 24Ω<br>tr<br>0,06<br>0,065<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 24Ω<br>td off<br>0,60<br>0,65<br>0,70<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 100 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 24Ω<br>tf<br>0,07<br>0,10<br>0,12<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 1300 A/µs (Tvj= 150°C)<br>RGon= 24Ω<br>Eon<br>4,85<br>5,70<br>6,00<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 2300 V/µs (Tvj= 150°C)<br>RGoff= 24Ω<br>Eoff<br>3,70<br>4,40<br>4,60<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>700<br>500<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,45<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,14<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

> IGBT-ModuleIGBT-modules FP100R06KE3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|600||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|100|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1100<br>990|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 1300 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||50,0<br>60,0<br>65,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 100 A, - diF/dt = 1300 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||3,00<br>6,30<br>7,50||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 1300 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,50<br>1,05<br>1,30||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,80|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,25||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|100|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|100|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|740<br>580|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|2750<br>1700|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 100 A|VF||1,10||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,50|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,155||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.0|||||||
|preparedby:AS|dateofpublication:2013-10-03||||||
|approvedby:RS|revision:2.0||||||



2 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FP100R06KE3 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FP100R06KE3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>190<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,50<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>3,10<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,095<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 43Ω<br>td on<br>0,10<br>0,10<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 43Ω<br>tr<br>0,06<br>0,065<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 43Ω<br>td off<br>0,60<br>0,65<br>0,70<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 43Ω<br>tf<br>0,04<br>0,05<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 300 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 43Ω<br>Eon<br>2,30<br>2,75<br>2,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 300 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 43Ω<br>Eoff<br>1,75<br>2,10<br>2,15<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>350<br>250<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,80<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,25<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



3 

> IGBT-ModuleIGBT-modules FP100R06KE3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>82,0<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,00|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 600 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||22,0<br>24,0<br>27,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 30 A, - diF/dt = 600 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,15<br>2,30<br>2,70||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 600 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,12<br>0,30<br>0,36||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,80|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,56||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�AS date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 

4 

IGBT-Module IGBT-modules 

## FP100R06KE3 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 225|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlk6rper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>Chip<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -<br>Module lead resistance, terminals - chip|TC<br>~~ee ~~<br>= 25°C, pro Schalter / per switch|LsCE<br>RCC'+EE'<br>RAA'+CC'<br> ~~ee ee~~|60<br>4,00<br>2,00<br>~~ee~~|||nH<br>mΩ|
|Hoéchstzulassige Sperrschichttemperatur<br>Maximum junction temperature|Wechselrichter, Brems-Chopper/ inverter, brake-chopper<br>Gleichrichter/ rectifier|Tvj max|||175<br>150|°C<br>°C|
|Temperatur im Schaltbetrieb<br>Temperature under switching conditions|Wechselrichter, Brems-Chopper/ inverter, brake-chopper<br>Gleichrichter/ rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Gewicht<br>Weight||G||300||g|



5 

IGBT-Module IGBT-modules 

## FP100R06KE3 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>200 a . 200 a<br>Tvj = 25°C VGE = 19V<br>180 Tvj = 125°C 180 P VGE = 17V oe<br>P Tvj = 150°C E) VGE = 15V |<br>VGE = 13V<br>160 er efi 160 | VGE = 11V Le[ Zz<br>T T eae y<br>VGE =   9V<br>P o J e g<br>140 140<br>120 120<br>PTTff /<br>100 100<br>TTT ar EP EEeT<br>80 BRRRRREeoe ee 80 eEy e<br>60 60<br>Pitti yer Le ee e<br>SRR ee) cee eee)<br>40 40<br>SRRn? ) ae<br>20 20<br>B a P ? AEAnnee ee e eeeee<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =24 Ω ,R Goff =24 Ω ,V CE =300V<br>200 20<br>Tvj = 25°C Eon,  Tvj = 125°C<br>180 Tvj = 125°C 18 Eoff, Tvj = 125°C<br>F Tvj = 150°C LU P Eon,  Tvj = 150°C O<br>Eoff, Tvj = 150°C<br>160 16<br>et Ee t oo<br>t<br>140 /\f 14<br>Pt | p e EP<br>ee<br>120 12<br>|Pe<br>100 10<br>Pt ee e e<br>ee eeeEEeee<br>80 8<br>er a<br>60 6<br>pt | tg | ot} EE eetZe<br>40 ee 4<br>A [Lr]<br>20 2<br>pt ee<br>Pe<br>0 0<br>| | | LE<br>5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FP100R06KE3 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =100A,V CE =300V<br>26 1<br>24 iS EEonoff,  T, Tvjvj = 125°C S  = 125°C r i Jott  te Pt i ¥—T ZthJC : IGBT OEa } TT1 +]<br>2220 | =ee EEonoff,  T, Tvjvj = 150°C = 150°C p eeoy fd |74| | a PHS||<br>18 =FRRRRSE peo al<br>16 See eee TIE<br>14<br>0,1<br>12 Pt vA<br>10 rt |tT | Pe|x] tt dd bo aEe a |<br>8 | | |e]Z| |) | eee TT— eea a a|ee |<br>6 PL oa a | el<br>4 |  is4-7]| Ler TT | aNJ} a| i:    1    2    | 3    4<br>ri[K/W]:   0,027   0,1485   0,144   0,1305<br>2 Z\ τ i[s]:    0,01    0,02    0,05    0,1<br>0 PPE EE ET 0,01 TMTTT<br>0 10 20 30 40 50 60 70 80 90 100 110 120 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Durchlasskennlinie der Diode, Wechselrichter (typisch) Schaltverluste Diode, Wechselrichter (typisch)<br>forward characteristic of Diode, Inverter (typical) switching losses Diode, Inverter (typical)<br>IF =f(V F) Erec =f(l F)<br>RGon = h, Ω ,V CE =300V<br>200 1,6<br>Tvj = 25°C Erec, Tvj = 125°C<br>180 Tvj = 125°C Erec, Tvj = 150°C<br>E Tvj = 150°C o 1,4 eo<br>160<br>ao ee e<br>1,2<br>140<br>S R R pam<br>Toa ae 1,0 LL ee<br>120 Seeeeen)<br>100 0,8<br>80<br>PP et tTTayeeeor eee<br>0,6<br>SeeeeeBoot<br>60<br>eo ALL<br>0,4<br>Pf a : | ey<br>40<br>es ae 0,2 oe<br>20<br>Coogee} EEE<br>0 0,0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 0 20 40 60 80 100 120 140 160 180 200<br>VF [V] IF [A]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>


7 

IGBT-Module IGBT-modules 

## FP100R06KE3 

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**----- Start of picture text -----**<br>
E omer rec G  losses ) Diode, Inverter (typical) rans ZthJC  impedance Diode, Inverter<br>IF =100A,V CE =300V<br>2,8 a 1 TT ooo<br>Erec, Tvj = 125°C ZthJC : Diode<br>2,6 Erec, Tvj = 150°C H— Se oe<br>2,4 ry ToT EEE TEE O e no<br>2,2 A<br>2,0<br>1,8<br>PT aan ae<br>1,6<br>BeEEEEr errr LACTIC<br>1,4 0,1<br>PAR EP pee ee eeTT<br>1,2 HASEEEEES<br>1,0 —— | pAE EHS<br>Py YT KEE TET a7Aa|no<br>0,80,6 HAASE) ZCI<br>0,4 a i:    1    PETE 2    3    4<br>ri[K/W]:   0,048   0,264   0,256   0,232<br>0,2 τ i[s]:    0,01    0,02    0,05    0,1<br>pL e ee<br>0,0 Pt; TTT TT Tt 0,01 HMETPLE<br>0 10 20 30 40 50 60 70 80 90 100 110 120 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Durchlasskennlinie der Diode, Gleichrichter (typisch) Ausgangskennlinie IGBT, Brems-Chopper (typisch)<br>I forward F F) characteristic of Diode, Rectifier (typical) I output C  characteristic CE) IGBT, Brake-Chopper (typical)<br>VGE<br>200 100<br>Tvj = 25°C Tvj = 25°C<br>180 Tvj = 150°C 90 Tvj = 125°C<br>Tvj = 150°C<br>ee ee e e ee<br>To r RB a<br>160 80<br>140 70<br>C C C) = Pe e<br>PCO E e<br>120 60<br>CO Eee<br>100 50<br>CO) Ca<br>80 40<br>60 30<br>PEECEEEEECRC) = CEE ceCee<br>SRRRReeee<br>40 20<br>PLP AAT2 eee eeeEEeee<br>20 10<br>0 0<br>py e e Le r EE<br>0,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 1,3 1,4 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6<br>VF [V] VCE  [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IF IC<br>**----- End of picture text -----**<br>


8 

IGBT-Module IGBT-modules 

## FP100R06KE3 

> IF =f(V F) 

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60 — T — vj = 25°C / 100000 _| eS Rtyp a Ee e<br>54 Tvj = 125°C<br>Tvj = 150°C<br>48 fo o se<br>Pt eg<br>42<br>; 10000 wtf<br>36<br>/| —————————| | | |<br>ER SSeS<br>30<br>PPE it} [iy)] EN se<br>24 i iu PoE NG<br>CONC<br>1000<br>18<br>ee a a a<br>12<br>ey / aee<br>6<br>Ef ee ee<br>EERE<br>0 100<br>ZAR R Re eee eee<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 0 20 40 60 80 100 120 140 160<br>VF [V] TC [°C]<br> [A] ] Ω<br>IF R[<br>**----- End of picture text -----**<br>


9 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FP100R06KE3 

## **Schaltplan�/�circuit_diagram_headline** 

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## **Vorläufige�Daten Preliminary�Data** 

## **Gehäuseabmessungen�/�package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�AS date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 

10 

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**----- Start of picture text -----**<br>
IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FP100R06KE3 

## **Nutzungsbedingungen** 

## application. 

11 



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---

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