# Power MOSFET, N Channel, 600 V, 30 A, 0.125 ohm, TO-220F, Through Hole ![Product image](https://novapart.co/image/farnell:2414391/) **URL**: https://novapart.co/products/FMV30N60S1/power-mosfet-n-channel-600-v-30-a-0125-ohm-to-220f **SKU**: FMV30N60S1 **Manufacturer**: FUJI ELECTRIC **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €4.6600 **Stock**: 50+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.106ohm; Rds(on) Test Voltag; Available until stocks are exhausted ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 90W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-220F | | Drain Source Voltage Vds | 600V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 30A | | Drain Source On State Resistance | 0.125ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2414391/) ## **FMV30N60S1** **http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET** ## **Super J-MOS series** ## **N-Channel enhancement mode power MOSFET** ## **Outline Drawings [mm]** ## **Features** ## **Equivalent circuit schematic** **==> picture [295 x 120] intentionally omitted <==** **----- Start of picture text -----**
TO-220F(SLS)
②Drain
①
①②③ Gate
③Source
Connection
1 Gate
2 Drain
3 Source DIMENSIONS ARE IN MILLIMETERS.
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Pb-free lead terminal RoHS compliant ## **Applications** For switching ## **Absolute Maximum Ratings at TC=25°C (unless otherwise specified)** **==> picture [526 x 212] intentionally omitted <==** **----- Start of picture text -----**
Description Symbol Characteristics Unit Remarks
VDS 600 V
Drain-Source Voltage
VDSX 600 V VGS=-30V
±30 A Tc=25°C Note*1
Continuous Drain Current ID
±19 A Tc=100°C Note*1
Pulsed Drain Current IDP ±90 A
Gate-Source Voltage VGS ±30 V
Repetitive and Non-Repetitive Maximum Avalanche Current IAR 6.6 A Note *2
Non-Repetitive Maximum Avalanche Energy EAS 849.2 mJ Note *3
Maximum Drain-Source dV/dt dVDS/dt 50 kV/μs VDS≤ 600V
Peak Diode Recovery dV/dt dV/dt 12 kV/μs Note *4
Peak Diode Recovery -di/dt -di/dt 100 A/μs Note *5
2.16 Ta=25°C
Maximum Power Dissipation PD W
90 Tc=25°C
Tch 150 °C
Operating and Storage Temperature range
Tstg -55 to +150 °C
Isolation Voltage Viso 2 kVrms t=60sec,f=60Hz
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Note *1 : Limited by maximum channel temperature. Note *2 : Tch≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch=25°C, IAS=4A, L=97.3mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C. Note *5 : IF≤-ID, dV/dt=12kV/μs, VDD≤400V, Tch≤150°C. ## **Electrical Characteristics at TC=25°C (unless otherwise specified)** ## **• Static Ratings** **==> picture [526 x 177] intentionally omitted <==** **----- Start of picture text -----**
Description Symbol Conditions min. typ. max. Unit
Drain-Source Breakdown Voltage BVDSS VIDGS=250μA=0V 600 - - V
Gate Threshold Voltage VGS(th) VIDDS=250μA=VGS 2.5 3.0 3.5 V
VDS=600V Tch=25°C - - 25
VGS=0V
Zero Gate Voltage Drain Current IDSS μA
VDS=480V Tch=125°C - - 250
VGS=0V
Gate-Source Leakage Current IGSS VVGSDS=0V= ±30V - 10 100 nA
Drain-Source On-State Resistance RDS(on) VIDGS=15A=10V - 0.106 0.125 Ω
Gate resistance RG f=1MHz, open drain - 3.2 - Ω
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07947a OCTOBER 2015 1 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ ## **• Dynamic Ratings** **==> picture [527 x 236] intentionally omitted <==** **----- Start of picture text -----**
Description Symbol Conditions min. typ. max. Unit
Forward Transconductance gfs VIDDS=15A=25V 13 26 - S
Input Capacitance Ciss VDS=10V - 2200 -
Output Capacitance Coss VGS=0V - 4670 -
Reverse Transfer Capacitance Crss f=1MHz - 430 -
Effective output capacitance, energy related (Note *6) Co(er) VVGSDS=0…480V=0V - 127 - pF
VGS=0V
Effective output capacitance, time related (Note *7) Co(tr) ID=constantVDS=0…480V - 450 -
td(on) - 31 -
Turn-On Time tr VDD=400V, VGS=10V - 57 -
ID=15A, RG=13Ω ns
Turn-Off Time td(off) See Fig.3 and Fig.4 - 136 -
tf - 17 -
Total Gate Charge QG - 73 -
Gate-Source Charge QGS VDD=480V, ID=30A - 18 -
VGS=10V nC
Gate-Drain Charge QGD See Fig.5 - 25 -
Drain-Source crossover Charge QSW - 11.5 -
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Note *6 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% BVDSS. Note *7 : Co(tr) is a fixed capacitance that gives the same charging times as Coss while VDS is rising from 0 to 80% BVDSS. ## **• Reverse Diode** **==> picture [527 x 141] intentionally omitted <==** **----- Start of picture text -----**
Description Symbol Conditions min. typ. max. Unit
Avalanche Capability IAV L=21.7mH, Tch=25°C 6.6 - - A
See Fig.1 and Fig.2
Diode Forward On-Voltage VSD ITF=30A, Vch=25°C GS=0V - 0.9 1.35 V
Reverse Recovery Time trr - 430 - ns
IF=30A, VGS=0V
VDD=400V
Reverse Recovery Charge Qrr -di/dt=100A/μs - 8.6 - μC
Tch=25°C
Peak Reverse Recovery Current Irp See Fig.6 - 38 - A
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## **Thermal Characteristics** **==> picture [527 x 46] intentionally omitted <==** **----- Start of picture text -----**
Description Symbol min. typ. max. Unit
Channel to Case Rth(ch-c) - - 1.39 °C/W
Channel to Ambient Rth(ch-a) - - 58 °C/W
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2 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ **==> picture [472 x 245] intentionally omitted <==** **----- Start of picture text -----**
Allowable Power Dissipation Safe Operating Area
100 PD=f(Tc) ID=f(VDS):Duty=0(Single pulse),Tc=25°C
90 102 t=
1µs
80
10µ s
70 101
100 µs
60
50
100
40
1m s
30
Power loss waveform :
20 10-1 Square waveform
PD
10
t
0 10-2
0 25 50 75 100 125 150
10-1 100 101 102 103
Tc [°C] VDS [V]
[W]
D
P [A]
ID
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Typical Output Characteristics ID=f(VDS):80µs pulse test,Tch=25°C Typical Output Characteristics ID=f(VDS):80µs pulse test,Tch=150°C **==> picture [468 x 464] intentionally omitted <==** **----- Start of picture text -----**
100 60
20V
10V 20V
10V
50
80 8V
8V
7V 6V
40
60 6.5V
5.5V
30
6V
40
5V
20
5.5V
20 10 V GS =4.5V
5V
0 V GS =4.5V 0
0 5 10 15 20 25 0 5 10 15 20 25
VDS [V] VDS [V]
Typical Drain-Source on-state Resistance Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C RDS(on)=f(ID):80µs pulse test,Tch=150°C
0.50 1.0
5V 5.5V 6V 4.5V 5V
0.45 0.9
0.40 0.8 5.5V
0.35 7V 0.7
0.30 8V 10V 0.6 6V
8V
10V
0.25 0.5
VGS=20V
0.20 0.4
VGS=20V
0.15 0.3
0.10 0.2
0.05 0.1
0.00 0.0
0 20 40 60 80 100 0 10 20 30 40 50 60
ID [A] ID [A]
[A] [A]
ID ID
(on) [ Ω ] (on) [ Ω ]
DS DS
R R
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3 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ **==> picture [470 x 738] intentionally omitted <==** **----- Start of picture text -----**
Drain-Source Breakdown Voltage Drain-Source On-state Resistance
BVDSS=f(Tch):ID=10mA,VGS=0V RDS(on)=f(Tch):ID=15A,VGS=10V
700 0.40
This curve is not a guaranteed performance and is a reference value.
680
0.35
660
0.30
640
0.25
620
600 0.20
max.
580
0.15
560
typ.
0.10
540
0.05
520
500 0.00
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tch [°C] Tch [°C]
Gate Threshold Voltage vs. Tch Typical Transfer Characteristic
VGS(th)=f(Tch):VDS=VGS,ID=250µA ID=f(VGS):80µs pulse test,VDS=25V
6 100
5
10
4
1
150℃ Tch=25℃
3
typ. 0.1
2
0.01
1
0 1E-3
-50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10
Tch [°C] VGS[V]
Typical Transconductance Typical Forward Characteristics of Reverse Diode
gfs=f(ID):80µs pulse test,VDS=25V IF=f(VSD):80µs pulse test
100 100
Tch=25℃
10 10
150℃
150℃ Tch=25℃
1 1
0.1 0.1
0.1 1 10 100 0.0 0.5 1.0 1.5 2.0
ID [A] VSD [V]
[V]
BVDSS (on) [ Ω ] DS
R
(th) [V]GS [A]ID
V
[A]IF
gfs [S]
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4 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ **==> picture [217 x 277] intentionally omitted <==** **----- Start of picture text -----**
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHzDS):VGS=0V,f=1MHz):VGS=0V,f=1MHzGS=0V,f=1MHz=0V,f=1MHz
1055
1044
1033 Ciss
1022
Coss
1011
Crss
1000
10-1-1
10-2-2 10-1-1 1000 1011 1022
VDS [V]DS [V] [V]
Typical Switching Characteristics vs. ID Tch=25°C
1033 t=f(ID):Vdd=400V,VGS=10V/0V,RG=13Ω, L=500uH D):Vdd=400V,VGS=10V/0V,RG=13Ω, L=500uH ):Vdd=400V,VGS=10V/0V,RG=13Ω, L=500uH GS=10V/0V,RG=13Ω, L=500uH =10V/0V,RG=13Ω, L=500uH G=13Ω, L=500uH =13Ω, L=500uH
C [pF]
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**==> picture [488 x 731] intentionally omitted <==** **----- Start of picture text -----**
C=f(VDS):VGS=0V,f=1MHzDS):VGS=0V,f=1MHz):VGS=0V,f=1MHzGS=0V,f=1MHz=0V,f=1MHz Typical Coss stored energy
1055 20
18
1044
16
1033 Ciss 14
12
1022 10
Coss 8
1011
6
Crss 4
1000
2
10-1-1 0
10-2-2 10-1-1 1000 1011 1022 0 100 200 300 400 500 600
VDS [V]DS [V] [V] VDS [V]
Typical Switching Characteristics vs. ID Tch=25°C Typical Gate Charge Characteristics
1033 t=f(ID):Vdd=400V,VGS=10V/0V,RG=13Ω, L=500uH D):Vdd=400V,VGS=10V/0V,RG=13Ω, L=500uH ):Vdd=400V,VGS=10V/0V,RG=13Ω, L=500uH GS=10V/0V,RG=13Ω, L=500uH =10V/0V,RG=13Ω, L=500uH G=13Ω, L=500uH =13Ω, L=500uH 10 VGS=f(Qg):ID=30A, Tch=25°C
Vdd=480V
300V
8
120V
tr
6
102
td(off)
4
td(on)
2
tf
101 0
100 101 102 0 10 20 30 40 50 60 70 80 90 100
ID [A] Qg [nC]
Maximum Avalanche Energy vs. startingTch Transient Thermal Impedance
2000 E(AV)=f(starting Tch):Vcc=60V,I(AV)<=6.6A 101 Zth(ch-c)=f(t):D=0
1800 IAS=2.0A
100
1600
1400
10-1
1200
1000
IAS=4.0A 10-2
800
600 IAS=6.6A 10-3
10-6 10-5 10-4 10-3 10-2 10-1 100
400
t [sec]
200
0
0 25 50 75 100 125 150
starting Tch [°C]
C [pF] Eoss [uJ]
[V]
t [ns] GS
V
Zth(ch-c) [℃/W]
[mJ]
AV
E
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5 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ **==> picture [425 x 133] intentionally omitted <==** **----- Start of picture text -----**
+10V
L VGS
-15V
BVDSS
Rg VDD IAV
D.U.T
VDS
0 ID
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Fig.1 Avalanche Test circuit Fig.2 Operating waveforms of Avalanche Test **==> picture [232 x 117] intentionally omitted <==** **----- Start of picture text -----**
Diode L
VDD
Rg D.U.T
(MOSFET)
PG
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Fig.3 Switching Test circuit **==> picture [340 x 110] intentionally omitted <==** **----- Start of picture text -----**
VDS VGS
VDS ×90% VDS ×90%
VGS ×90%
VDS ×10% VDS ×10%
VGS ×10%
td(on) tr td(off) tf
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Fig.4 Operating waveform of Switching Test **==> picture [423 x 147] intentionally omitted <==** **----- Start of picture text -----**
VGS,VDS
VDS peak
IF
VDS VGS trr VDS
QG
10V
QSW
Irp×10%
QGS QGD
Qg Irp Qrr=∫ ir0trr・dt
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Fig.5 Operating waveform of Gate charge Test Fig.6 Operating waveform of Reverse recovery Test 6 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ ## **Outview: TO-220F(SLS) Package** **==> picture [149 x 266] intentionally omitted <==** **==> picture [73 x 129] intentionally omitted <==** **==> picture [66 x 47] intentionally omitted <==** **==> picture [49 x 48] intentionally omitted <==** **----- Start of picture text -----**
Connection
1 Gate
2 Drain
3 Source
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DIMENSIONS ARE IN MILLIMETERS. ## **Marking** ## Marking **==> picture [318 x 176] intentionally omitted <==** **----- Start of picture text -----**
Date code & Lot No.
Y: Last digit of year
Trademark
M: Month code 1~9 and O,N,D
NNN: Lot. serial number
Country of YMNNN Under bar of date code
origin mark. 30N60S1 : means lead-free mark
" " (Blank): Japan
P : Philippines Type name
* The font (font type,size) and the trademark-size
might be actually different.
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7 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ ## **WARNING** **==> picture [455 x 350] intentionally omitted <==** **----- Start of picture text -----**
|||||| |---|---|---|---|---| |1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2015.| |The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be| |sur to obtain the latest specifications.| |2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or| |implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)| |granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged| |infringement of other's intellectual property rights which may arise from the use of the applications described herein.| |3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become| |faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent| |the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your| |design failsafe, flame retardant, and free of malfunction.| |4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability| |requirements.| |• Computers|• OA equipment|• Communications equipment (terminal devices)|• Measurement equipment| |• Machine tools|• Audiovisual equipment|• Electrical home appliances|• Personal equipment|• Industrial robots etc.| |5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,| |it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate| |measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment| |becomes faulty.| |• Transportation equipment (mounted on cars and ships)|• Trunk communications equipment| |• Traffic-signal control equipment|• Gas leakage detectors with an auto-shut-off feature| |• Emergency equipment for responding to disasters and anti-burglary devices|• Safety devices| |• Medical equipment| |6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment| |(without limitation).| |• Space equipment|• Aeronautic equipment|• Nuclear control equipment| |• Submarine repeater equipment| |7. Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved.| |No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.| |8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.| |Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions| |set forth herein.| **----- End of picture text -----**
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