# Bipolar (BJT) Single Transistor, NPN, 20 V, 1.25 A, 500 mW, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:3943236RL/) **URL**: https://novapart.co/products/FMMTL618TA/bipolar-bjt-single-transistor-npn-20-v-125-a-500 **SKU**: FMMTL618TA **Manufacturer**: DIODES INC. **Price**: €0.1370 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 500mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 195MHz | | Transistor Case Style | SOT-23 | | Dc Current Gain Hfe Min | 100hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 1.25A | | Collector Emitter Voltage Max | 20V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3943236RL/) ## **SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR** ## **FMMTL618** ## **ISSUE 1 – NOVEMBER 1997** FEATURES Very low equivalent on-resistance; **RCE(sat)** =140m Ω at 1.25A COMPLEMENTARY TYPE – FMMTL718 PARTMARKING DETAIL – L68 **==> picture [70 x 40] intentionally omitted <==** **----- Start of picture text -----**
E
C
B
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## **ABSOLUTE MAXIMUM RATINGS.** |**ABSOLUTE MAXIMUM RATINGS.**|||| |---|---|---|---| |PARAMETER|SYMBOL|VALUE|UNIT| |Collector-Base Voltage|VCBO|60|V| |Collector-Emitter Voltage|VCEO|20|V| |Emitter-Base Voltage|VEBO|5|V| |Continuous Collector Current|IC|1.25|A| |Peak Pulse Current|ICM|4|A| |Base Current|IB|200|mA| |Power Dissipation at Tamb=25°C|Ptot|500|mW| |Operating and Storage Temperature Range|Tj:Tstg|-55 to +150|°C| ## **FMMTL618** ## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).** |PARAMETER|SYMBOL|MIN.|TYP.|MAX.|UNIT|CONDITIONS.| |---|---|---|---|---|---|---| |Collector-Base
Breakdown Voltage|V(BR)CBO|60|105||V|IC=100µA| |Collector-Emitter
Breakdown Voltage|V(BR)CEO|20|30||V|IC=10mA*| |Emitter-Base
Breakdown Voltage|V(BR)EBO|5|8.5||V|IE=100µA| |Collector Cut-Off Current|ICBO|||10|nA|VCB=16V| |Emitter Cut-Off Current|IEBO|||10|nA|VEB=4V| |Collector Cut-Off Current|ICES|||10|nA|VCE=16V| |Collector-Emitter
Saturation Voltage|VCE(sat)||18
80
130
170
260|35
160
200
280
350|mV
mV
mV
mV
mV|IC=100mA, IB=10mA*
IC=500mA, IB=25mA*
IC=1A, IB=100mA*
IC=1.25A, IB=100mA*
IC=2A, IB=200mA*| |Base-Emitter
Saturation Voltage|VBE(sat)||1000|1100|mV|IC=1.25A, IB=100mA*| |Base-Emitter
Turn On Voltage|VBE(on)||850|1000|mV|IC=1.25A, VCE=2V*| |Static Forward
Current Transfer Ratio|hFE|200
300
250
200
100
50|400
440
400
300
190
100|||IC=10mA, VCE=2V
IC=200mA, VCE=2V*
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=3A, VCE=2V*| |Transition Frequency|fT||195||MHz|IC=50mA, VCE=10V
f=100MHz| |Collector-Base
Breakdown Voltage|Cobo||9|12|pF|VCB=10V, f=1MHz| |Switching times|ton
toff||72
388||ns
ns|IC=1A, VCC=10V
IB1=-IB2=10mA| *Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2% ## **FMMTL618** ## **TYPICAL CHARACTERISTICS** **==> picture [357 x 437] intentionally omitted <==** **----- Start of picture text -----**
+25°C IC/IB=10
300m 300m
-55°C
200m 200m +25°C
IC/IB=10 +100°C
IC/IB=20
IC/IB=50
100m 100m
0 0
1mA 10mA 100mA 1A 10A 1m 10m 100m 1A 10A
IC - Collector Current (A) IC - Collector Current (A)
VCE(sat) v IC VCE(sat) v IC
600 VCE=2V 1.0 IC/IB=10
0.8
0.6
300
0.4
-55°C
+100°C +25°C
+25°C 0.2 +100°C
-55°C
0 0
1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A
IC - Collector Current (A) IC - Collector Current (A)
hFE v IC VBE(sat) v IC
1.0 10A
VCE=2V
0.8
1A
0.6
DC
1s
100ms
0.4 10ms
100m 1ms
-55°C 100us
0.2 +25°C
+100°C
0 10m
1mA 10mA 100mA 1A 10A 100m 1 10 100
IC - Collector Current (A) VCE - Collector Emitter Voltage (V)
VBE(on) v IC Safe Operating Area
- (V) - (V)
CE(sat) CE(sat)
V V
- (V)
BE(sat)
- Typical Gain V
FE
h
- (V)
BE(on)
V
- Collector Current (A)
IC
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