# Bipolar (BJT) Single Transistor, PNP, 20 V, 1.5 A, 806 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3943233/)

**URL**: https://novapart.co/products/FMMT718TC/bipolar-bjt-single-transistor-pnp-20-v-15-a-806-mw
**SKU**: FMMT718TC
**Manufacturer**: DIODES INC.
**Price**: €0.1450
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 806mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 180MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 150hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1.5A |
| Collector Emitter Voltage Max | 20V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943233/)

**FMMT718** & -— **20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23** 

## DIODES 

## **Features** 

## **Mechanical Data** 

- BVCEO > -20V 

- IC = -1.5A Continuous Collector Current 

- ICM = -6A Peak Pulse Current 

- Low Saturation Voltage VCE(sat) < -200mV @ -1A 

- RCE(SAT) = 97mΩ for a low equivalent on-resistance 

- 625mW power dissipation 

- hFE characterized up to -6A for high current gain hold-up 

   - Case: SOT23 

   - Case Material: molded plastic, “Green” molding compound 

   - UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight 0.008 grams (Approximate) 

- Complementary NPN Type: FMMT618 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen- and Antimony-Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

## **Applications** 

      - Gate Driving MOSFETs and IGBTs 

      - DC-DC Converters 

      - Charging circuit 

      - Power switches 

   - **https://www.diodes.com/quality/product-definitions/** 

- **An Automotive-Compliant Part Is Available Under Separate Datasheet (FMMT718Q)** 

**==> picture [352 x 125] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23  E<br>C<br>C<br>B<br>B<br>E<br>Top View  Device Symbol  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|---|---|
|||||||
|**Product**|**Compliance**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|FMMT718TA|Standard|718|7|8|3,000|
|FMMT718TC|Standard|718|13|8|10,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
718<br>**----- End of picture text -----**<br>


718 = Product Type Marking Code 

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FMMT718 Document Number:  DS31924 Rev. 5 - 2 

January 2021 © Diodes Incorporated 

**FMMT718** 

## **Absolute Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-20|V|
|Collector-Emitter Voltage|VCEO|-20|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current|IC|-1.5|A|
|Peak Pulse Current|ICM|-6|A|
|Base Current|IB|-500|mA|



## **Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 5)|PD|625|mW|
|Power Dissipation (Note 6)|PD|806|mW|
|Thermal Resistance, Junction to Ambient (Note 5)|RθJA|200|°C/W|
|Thermal Resistance, Junction to Ambient (Note 6)|RθJA|155|°C/W|
|Thermal Resistance, Junction to Leads (Note 7)|RθJL|194|°C/W|
|Operating and Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 8) 

|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|≥ 400|V|C|



Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

6. Same as note 5, except the device is measured at t ≤ 5 sec. 

7. Thermal resistance from junction to solder-point (at the end of the collector lead). 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

2 of 7 **www.diodes.com** 

FMMT718 Document Number:  DS31924 Rev. 5 - 2 

January 2021 © Diodes Incorporated 

**FMMT718** 

## **Thermal Characteristics and Derating information** 

**==> picture [239 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
220<br>200 Tamb=25 ° C<br>180 ama mE aN<br>Caer<br>160<br>140 STST TT gmat UTI<br>120<br>D=0.5<br>100 crmeeTTer aeTeT cm<br>80 PTI TIT Tage TTTA TTAT<br>D=0.1<br>60 D=0.2<br>Baal ea<br>40 D=0.05<br>20 nai FH<br>0 St | Ui Single Pulse CUNT TUT<br>100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


## **Transient Thermal Impedance** 

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**----- Start of picture text -----**<br>
0.7<br>0.6<br>22S S2SS<br>——_<br>0.5<br>PTENEEEEE Eee<br>0.4<br>eeCOCA ee<br>0.3<br>es<br>PINE<br>0.2<br>EEEEERE<br>0.1 a<br>0.0 PPPNT<br>0 25 50 75 100 125 150 175<br> Temperature (°C)<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


## **Derating Curve** 

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**----- Start of picture text -----**<br>
100<br>Single Pulse<br>T =25 ° C<br>\ amb<br>10 Sc nee)<br>BAT IIOMANIVIOnATIVibee®< SUNN] RAUIIPORI<br>1<br>0.1 a<br>100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Pulse Power Dissipation<br> Maximum Power (W)<br>**----- End of picture text -----**<br>


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FMMT718 Document Number:  DS31924 Rev. 5 - 2 

January 2021 © Diodes Incorporated 

reir 

**FMMT718** 

**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~pT~~<br>~~pO~~|**Symbol**<br>~~pT~~|**Min**<br>~~pT~~|**Typ**<br>~~pT~~<br>~~CO~~|**Max**<br>~~pT~~<br>~~CO~~|**Unit**<br>~~pT~~<br>~~GO~~|**Test Condition**<br>~~pT~~<br>~~GO~~|
|Collector-Base Breakdown Voltage<br>~~Ge~~<br>~~pO~~|BVCBO<br>~~Ge~~|-20<br>~~Ge~~|-65<br>~~Ge~~<br>~~CO~~|-<br>~~Ge~~<br>~~CO~~|V<br>~~Ge~~<br>~~GO~~|IC= -100µA<br>~~Ge~~<br>~~GO~~|
|Collector-Emitter Breakdown Voltage (Note 9)<br>~~pO~~|BVCEO|-20|-55<br>~~CO~~|-<br>~~CO~~<br>~~GO~~|V<br>~~GO~~<br>~~GO~~|IC= -10mA<br>~~GO~~<br>~~GO~~|
|Emitter-Base Breakdown Voltage<br>~~pO~~<br>~~GG~~|BVEBO<br>~~GG~~|-7<br>~~GG~~|-8.8<br>~~CO~~<br>~~GG~~<br>~~GCS~~|-<br>~~CO ~~<br>~~GG~~<br>~~GO~~<br>~~GCS~~|V<br> ~~GO~~<br>~~GG~~<br>~~GO~~<br>~~GO~~|IE = -100µA<br>~~GO~~<br>~~GG~~<br>~~GO~~<br>~~GO~~|
|Collector Cutoff Current<br>~~GC~~|ICBO<br>~~GC~~|-<br>~~GC~~|-<br>~~GC~~<br>~~GCS~~<br>~~GO~~|-100<br>~~GO ~~<br>~~GC~~<br>~~GCS~~<br>~~GO~~|nA<br> ~~GO~~<br>~~GC~~<br>~~GO~~<br>~~GO~~|VCB = -15V<br>~~GO~~<br>~~GC~~<br>~~GO~~<br>~~GO~~|
|Emitter Cutoff Current<br>~~GG~~|IEBO<br>~~GG~~|-<br>~~GG~~|-<br>~~GCS~~<br>~~GG~~<br>~~GO~~<br>~~GD~~|-100<br>~~GCS ~~<br>~~GG~~<br>~~GO~~<br>~~GO~~|nA<br> ~~GO~~<br>~~GG~~<br>~~GO~~<br>~~GO~~|VEB = -4V<br>~~GO~~<br>~~GG~~<br>~~GO~~<br>~~GO~~|
|Collector Emitter Cutoff Current<br>~~GC~~|ICES<br>~~GC~~|-<br>~~GC~~|-<br>~~GO~~<br>~~GC~~<br>~~GD~~|-100<br>~~GO ~~<br>~~GC~~<br>~~GO~~|nA<br> ~~GO~~<br>~~GC~~<br>~~GO~~|VCE= -15V<br>~~GO~~<br>~~GC~~<br>~~GO~~|
|Static Forward Current Transfer Ratio (Note 9)|hFE<br>~~|~~|300<br>~~ee~~|475<br>~~GD ~~<br>~~ee~~|-<br> ~~GO ~~<br>~~ee~~|-<br> ~~GO~~<br>~~ee~~|IC = -10mA, VCE = -2V<br>~~GO~~<br>~~po~~|
|||300<br>~~a ~~<br>~~| |~~|450<br> ~~a~~<br>~~|~~|-<br>~~|~~||IC= -100mA, VCE= -2V<br>~~po~~<br>~~po~~|
|||150<br>~~| |~~|230<br>~~|~~|-<br>~~|~~||IC= -2A, VCE= -2V<br>~~po~~|
|||35<br>~~| |~~<br>~~ee~~|70<br>~~|~~<br>~~ee~~|-<br>~~|~~<br>~~ee~~||IC= -4A, VCE= -2V<br>~~po~~<br>~~po~~|
|||15<br>~~a ~~<br>~~a~~|30<br> ~~a~~|-<br>~~ee~~||IC= -6A, VCE = -2V<br>~~po~~<br>~~ee~~|
|Collector-Emitter Saturation Voltage (Note 9)|VCE(sat)|-<br>~~a~~<br>~~a~~|-16<br>|-40<br>~~ee~~<br>|mV<br>~~ee~~<br>|IC=- 0.1A, IB = -10mA<br>~~ee~~<br>~~ee~~<br>|
|||-<br>~~a~~<br>~~a~~<br>~~a~~|-130<br>~~ee~~<br>|-200<br>~~ee~~<br>~~ee~~<br>|mV<br>~~ee~~<br>~~ee~~<br>|IC= -1A, IB= -20mA<br>~~ee~~<br>~~ee~~<br>~~ee~~<br><br>~~ee~~|
|||-<br>~~a~~|-145<br>~~ee~~<br>~~GO~~|-220<br>~~ee~~<br>~~GO~~|mV<br>~~ee~~|IC= -1.5A, IB = -50mA<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|Base-Emitter Turn-On Voltage(Note 9)<br>~~GO~~|VBE(on)<br>~~GO~~|-<br>~~GO~~|-0.81<br>~~GO~~<br>~~GO~~|-1.0<br>~~GO~~<br>~~GO~~<br>~~GO~~|V<br>~~GO~~|IC = -2A, VCE= -2V<br>~~ee~~<br>~~GO~~|
|Base-Emitter Saturation Voltage(Note 9)<br>~~GG~~|VBE(sat)<br>~~GG~~|-<br>~~GG~~|-0.87<br>~~GO~~<br>~~GG~~|-1.0<br>~~GO~~<br>~~GG~~<br>~~GO~~<br>~~GO~~|V<br>~~GG~~<br>~~OO~~|IC = -1.5A, IB= -50mA<br>~~GG~~<br>~~OO~~|
|Output Capacitance<br>~~GG~~|Cobo<br>~~GG~~|-<br>~~GG~~|34<br>~~GG~~|43<br>~~GO~~<br>~~GG~~<br>~~GO~~|pF<br>~~GG~~<br>~~OO~~|VCB= -10V, f = 1MHz<br>~~GG~~<br>~~OO~~|
|Transition Frequency<br>~~fp~~|fT|150|180|-<br>~~GO ~~|MHz<br> ~~OO~~|VCE= -10V, IC= -50mA,<br>f = 100MHz<br>~~OO~~|
|Turn-On Time<br>~~fp~~|ton<br>~~ee~~|-|68<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~|VCC= -10V, IC= -1A<br>IB1 = IB2= -20mA<br>~~ee~~|
|Turn-Off Time<br>~~fp~~<br>~~ee~~|toff<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|270<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||



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FMMT718 Document Number:  DS31924 Rev. 5 - 2 

January 2021 © Diodes Incorporated 

**FMMT718** [ 

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**Typical Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

**==> picture [206 x 25] intentionally omitted <==**

**----- Start of picture text -----**<br>
VCE=-2V<br>va fee TTT TT<br>**----- End of picture text -----**<br>


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VCE=-2V  a a ee<br>1.2 ee eee<br>**----- End of picture text -----**<br>


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FMMT718 

January 2021 © Diodes Incorporated 

Document Number:  DS31924 Rev. 5 - 2 

**FMMT718** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23 (Type DN)** 

**==> picture [431 x 248] intentionally omitted <==**

**----- Start of picture text -----**<br>
b<br>an<br>SOT23 Type DN<br>E Dim  Min  Max  Typ<br>—= A  0.89  1.12  1.00<br>A1  0.01  0.10  0.05<br>b  0.30  0.51  0.45<br>c  0.08  0.20  0.10<br>D  2.80  3.04  3.00<br>e<br>E  2.10  2.64  2.42<br>e1 E1  1.20  1.40  1.37<br>e  0.95 REF<br>D e1  1.90 REF<br>E1 L  0.25  0.60  0.30<br>L1  0.45  0.62  0.54<br>L1 All Dimensions in mm<br>A<br>Sia RU c —s1 a<br>A1<br>L<br>Ju<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23 (Type DN)** 

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**----- Start of picture text -----**<br>
Y<br>Y1 a C<br>aCo X kda X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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FMMT718 Document Number:  DS31924 Rev. 5 - 2 

January 2021 © Diodes Incorporated 

**www.diodes.com** 

**FMMT718** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

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FMMT718 Document Number:  DS31924 Rev. 5 - 2 

January 2021 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/FMMT718TC/bipolar-bjt-single-transistor-pnp-20-v-15-a-806-mw)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/fmmt718tc/trans-pnp-20v-1-5a-150deg-c-0/dp/3943233)
---

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