# Bipolar Transistor Array, Dual NPN, 100 V, 900 mA, 806 mW

![Product image](https://novapart.co/image/farnell:3944336RL/)

**URL**: https://novapart.co/products/FMMT634QTA/bipolar-transistor-array-dual-npn-100-v-900-ma-806
**SKU**: FMMT634QTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.1920
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual NPN |
| Power Dissipation Npn | 806mW |
| Power Dissipation Pnp | - |
| Transistor Case Style | SOT-23 |
| Transition Frequency Npn | 140MHz |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 15000hFE |
| Dc Current Gain Hfe Min Pnp | - |
| Continuous Collector Current Npn | 900mA |
| Continuous Collector Current Pnp | - |
| Collector Emitter Voltage Max Npn | 100V |
| Collector Emitter Voltage Max Pnp | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944336RL/)

**FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23** 

## **Description** 

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. 

## **Features** 

- BVCEO  > 100V 

- IC = 900mA High Continuous Collector Current 

- ICM = 5A Peak Pulse Current 

- 625mW Power Dissipation 

- hFE > 5k up to 2A for High Current Gain Hold up 

- Complementary PNP Type: FMMT734Q 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The FMMT634Q is suitable for automotive applications requiring specific change control; it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin Plated Leads, Solderable per MILSTD-202, Method 208 

- Weight 0.008 grams (Approximate) 

## **Applications** 

   - Automotive 

   - Lamp 

   - Relay 

   - Solenoid Driving 

- **https://www.diodes.com/quality/product-definitions/** 

**==> picture [403 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23<br>E<br>C<br>B<br>Top View  Device Symbol  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|---|---|
|||||||
|**Product**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity Per Reel**|
|FMMT634QTA|Automotive|634|7|8|3,000|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
6243 634 = Product Type Marking Code<br>**----- End of picture text -----**<br>


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FMMT634Q Document number: DS37051  Rev. 2 - 2 

October 2019 © Diodes Incorporated 

**FMMT634Q** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|120|V|
|Collector-Emitter Voltage|VCEO|100|V|
|Emitter-Base Voltage|VEBO|12|V|
|Continuous Collector Current|IC|900|mA|
|Peak Pulse Current|ICM|5|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 5)|PD|625|mW|
|Power Dissipation(Note 6)|PD|806|mW|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|200|C/W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|155|C/W|
|Thermal Resistance,Junction to Leads(Note 7)|RθJL|194|C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|C|



## **ESD Ratings** (Note 8) 

|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|2,000|V|2|
|Electrostatic Discharge - Machine Model|ESD MM|200|V|B|



Notes: 5. For a device mounted with the exposed collector pad on 25mm  25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

6. Same as note (5), except the device is measured at t ≤ 5s. 

7. Thermal resistance from junction to solder-point (at the end of the collector lead). 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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FMMT634Q Document number: DS37051  Rev. 2 - 2 

October 2019 © Diodes Incorporated 

**FMMT634Q** 

## **Thermal Characteristics and Derating information** 

**==> picture [498 x 391] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 10 —— 0.7<br>V CE(sat)<br>_ Limited [Ss NUNN[Ss SL TN4 0.6 Pot PNG<br>1<br>0.5<br>DC<br>5 PSTN 1s 0.4 eaNe e e e<br>100m<br>0.3<br>100ms<br>10ms 0.2<br>2 8 oot 10m iaEISL 1ms 100 祍 =< N PEE EEE EE SEE<br>S Single Pulse 0.1<br>9© 900, 1m100m SEHLLL T A =25 o C 1 eae 10 oh 100 0.00 BEEEEEEEEENEi 25 50 75 100 125 \ 150 EH 175<br>0.1V VVCECE – Collector Emitter Voltage (V)   Collector-Emitter Voltage (V) 1V 10V 100V  Temperature (oC)<br>   Safe Operating Area Safe Operating Area<br>Derating Curve<br>220 100<br>200 T =25 o C<br>180 A Single PulseT =25 o C<br>160 Ty LILO esa Ha A<br>etenne| nea<br>140 A ee 10 TIN PEC i<br>120<br>D=0.5<br>100<br>ft N<br>80<br>1<br>60 a? D=0.2 D=0.1 sine SP Se<br>40 D=0.05<br>eA Th CC no<br>20<br>emesis eMail AI TI Cr er CE CoCCOC<br>0 Saineeelll Single Pulse CT 0.1 000000<br>100 μ 1m 10m 100m 1 10 100 1k 100 μ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Collector Current (A)<br>C<br>I<br> Max Power Dissipation (W)<br>C/W)<br>o<br> Maximum Power (W)<br>Thermal Resistance (<br>**----- End of picture text -----**<br>


**Transient Thermal Impedance** 

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FMMT634Q Document number: DS37051  Rev. 2 - 2 

October 2019 © Diodes Incorporated 

**FMMT634Q** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage|BVCBO|120|170|—|V|IC= 100µA|
|Collector-Emitter Breakdown Voltage(Note 9)|BVCEO|100|115|—|V|IC= 10mA|
|Emitter-Base Breakdown Voltage<br>~~eo~~|BVEBO<br>~~eo~~|12<br>~~eo~~|16<br>~~eo~~|—<br>~~eo~~|V<br>~~eo~~|IE= 100µA<br>~~eo~~|
|Collector Cut-Off Current<br>~~eo~~|ICBO<br>~~eo~~|—<br>~~eo~~|<1<br>~~eo~~|10<br>~~eo~~|nA<br>~~eo~~|VCB= 80V<br>~~eo~~|
|Emitter Cut-Off Current|IEBO|—|<1|10|nA|VEB= 7V|
|Collector Emitter Cut-Off Current|ICES|—|<1|100|nA|VCES= 80V|
|Static Forward Current Transfer Ratio (Note 9)|hFE|—<br>20k<br>15k<br>5k<br>—<br>—|50k<br>60k<br>40k<br>14k<br>24k<br>600|—<br>—<br>—<br>—<br>—<br>—|—|IC= 10mA, VCE= 5V<br>IC= 100mA, VCE= 5V<br>IC= 1A, VCE= 5V<br>IC= 2A, VCE= 5V<br>IC= 1A, VCE= 2V<br>IC= 5A,VCE= 5V|
|Collector-Emitter Saturation Voltage (Note 9)|VCE(sat)|—<br>—<br>—<br>—<br>—<br>—<br>—|0.67<br>0.72<br>0.78<br>0.75<br>0.82<br>0.68<br>0.85|0.75<br>0.80<br>1<br>0.85<br>0.93<br>—<br>0.96|V|IC= 100mA, IB= 1mA<br>IC= 250mA, IB= 1mA<br>IC= 500mA, IB= 1mA<br>IC= 500mA, IB= 5mA<br>IC= 900mA, IB= 5mA<br>IC= 900mA, IB= 5mA, TJ= +150°C<br>IC= 1A,IB= 5mA|
|Base-Emitter Saturation Voltage(Note 9)|VBE(sat)|—|1.5|1.65|V|IC= 1A,IB= 5mA|
|Base-Emitter Turn-On Voltage(Note 9)|VBE(on)<br>~~Pe~~|—<br>~~ts~~|1.33|1.50|V|IC= 1A,VCE= 5V|
|Transition Frequency<br>~~ee~~|fT<br>~~ee~~<br>~~Pe~~|—<br>~~ee~~<br>~~ts~~|140<br>~~ee~~<br>~~QO~~|—<br>~~ee~~<br>~~QO~~|MHz<br>~~ee~~<br>~~QO~~|IC= 50mA, VCE= 10V,<br>f = 100MHz<br>~~ee~~|
|Output Capacitance<br>~~QO~~|Cobo<br>~~Pe ~~<br>~~QO~~|—<br> ~~ts~~<br>~~QO~~|9<br>~~QO~~<br>~~QO~~|20<br>~~QO~~<br>~~QO~~|pF<br>~~QO~~<br>~~QO~~|VCB= 10V,f = 1MHz<br>~~QO~~|
|Turn-On Time<br>~~J~~|t(on)<br>~~J~~|—<br>~~J~~|290<br>~~QO~~<br>~~J~~|—<br>~~QO~~<br>~~J~~|ns<br>~~QO~~<br>~~J~~|VCC= 20V, IC= 500mA,<br>IB1= -IB2= 1mA<br>~~J~~|
|Turn-Off Time<br>~~J~~|t(off)<br>~~J~~|—<br>~~J~~|2,400<br>~~J~~|—<br>~~J~~|ns<br>~~J~~||



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FMMT634Q Document number: DS37051  Rev. 2 - 2 

October 2019 © Diodes Incorporated 

**FMMT634Q** [| 

**Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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FMMT634Q Document number: DS37051  Rev. 2 - 2 

October 2019 © Diodes Incorporated 

**FMMT634Q** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

**==> picture [471 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
All 7°<br>H<br>GAUGE PLANE SOT23<br>J 0.25 Dim  Min  Max  Typ<br>K1 K A  0.37  0.51  0.40<br>B  1.20  1.40  1.30<br>{Sa a —— C  2.30  2.50  2.40<br>A M D  0.89  1.03  0.915<br>F  0.45  0.60  0.535<br>L L1<br>G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>C i; B Taen l ————BBEE K1  0.903 1.10 1.025<br>L  0.45 0.61  0.55<br>L1  0.25 0.55 0.40<br>(c === M  0.085 0.150 0.110<br>roo | es ee ee<br>|_ D | ee a  0°  ee ee 8°  ee --<br>F G All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

**==> picture [137 x 122] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Y1 ate C<br>Ge<br>Po X Lo X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|**()**<br>2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking. 

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FMMT634Q Document number: DS37051  Rev. 2 - 2 

October 2019 © Diodes Incorporated 

**FMMT634Q** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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FMMT634Q Document number: DS37051  Rev. 2 - 2 

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- [Supplier page](https://es.farnell.com/diodes-inc/fmmt634qta/transistor-npn-100v-0-9a-sot-23/dp/3944336RL)
---

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