# Bipolar (BJT) Single Transistor, PNP, 500 V, 150 mA, 500 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:9525114/)

**URL**: https://novapart.co/products/FMMT560/bipolar-bjt-single-transistor-pnp-500-v-150-ma-mw
**SKU**: FMMT560
**Manufacturer**: DIODES INC.
**Price**: €0.1470
**Stock**: 25+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:500V; Transition Frequency ft:60MHz; Power Dissipation Pd:500mW; DC Collector Current:150mA; DC Current Gain hFE:100hFE; Transistor Cas

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 500mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 60MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 150mA |
| Collector Emitter Voltage Max | 500V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9525114/)

**FMMT560** 

**500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23** 

## **Features** 

## **Mechanical Data** 

- BVCEO > -500V 

- IC = -150mA high Continuous Collector Current 

- ICM Up to -500mA Peak Pulse Current 

- Excellent hFE Characteristics up to IC = -100mA 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight 0.008 grams (Approximate) 

- **An Automotive Compliant Part is Available Under Separate Datasheet (FMMT560Q)** 

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C Cc<br>B<br>©<br>B<br>E<br>Top View<br>Device Symbol  Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|---|---|
|||||||
|**Product**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|FMMT560TA|AEC-Q101|560|7|8|3,000|
|FMMT560TC|AEC-Q101|560|13|8|10,000|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

**560** 560 = Product Type Marking Code 

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FMMT560 Document Number: DS33102 Rev. 7 - 2 

January 2016 © Diodes Incorporated 

**FMMT560** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-500|V|
|Collector-Emitter Voltage|VCEO|-500|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current|IC|-150|mA|
|Peak Pulse  Current|ICM|-500|mA|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 5)|PD|500|mW|
|Thermal Resistance,Junction to Ambient|(Note 5)|RθJA|250|°C/W|
|Thermal Resistance,Junction to Lead|(Note 6)|RθJL|194|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 7) 

|**ESD Ratingsgss **(Note 7)|**ESD Ratingsgss **(Note 7)|**ESD Ratingsgss **(Note 7)|**ESD Ratingsgss **(Note 7)|**ESD Ratingsgss **(Note 7)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|ElectrostaticDischarge– Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge – Machine Model|ESD MM|400|V|C|



Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

6. Thermal resistance from junction to solder-point (at the end of the collector lead). 

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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FMMT560 Document Number: DS33102 Rev. 7 - 2 

January 2016 © Diodes Incorporated 

**FMMT560** 

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## **Thermal Characteristics and Derating Information** 

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**----- Start of picture text -----**<br>
1 0.6<br>V<br>CE(sat) 15 x 15mm FR4 1oz Copper<br>Limit Ae 0.5<br>A IAN TNA<br>100 m KORKN 0.4 PING<br>EE<br>SERGEat DC Py 1s TACTPTT Z7 ONoT NACAZINN ZX)AE| 0.3 “\ |<br>100ms<br>10 m IHa eeAS 10ms IS ZNS ANO 0.2 N\<br>ro 15 x 15mm FR4  i 1ms Se 0 0.1 \<br>1oz Copper 100µs<br>1 m iiiil 1 nai 10 LT 100 ut 0.00 PETE 20 40 60 80 TT 100  IN 120 140 \ 160<br>-VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>240 15 x 15mm FR4 1oz Copper 15 x 15mm FR4 1oz Copper<br>pre rer rer re me a SSeS \ Sr<br>> ailil 100 PSE FIP a yy a<br>200<br>160 SET Dea inital HHSed<br>D=0.5 CTI Le va  |Tage W/\ A CCT 10 fhe}A080ee ee te<br>120<br>80<br>D=0.2 Single Pulse mull 1 SSS<br>pS CC [og] APN TT A<br>40 D=0.05<br>0 |Sees D=0.1 VACCH 0.1 SSettiPC asetti Fn aatiCCCesate eesti eee<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Collector Current (A)<br>C<br>-I<br> Max Power Dissipation (W)<br>Thermal Resistance (°C/W)  Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

FMMT560 Document Number: DS33102 Rev. 7 - 2 

January 2016 © Diodes Incorporated 

**FMMT560** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|Collector-Base Breakdown Voltage<br>~~ee~~|BVCBO<br>~~ee~~|-500<br>~~ee~~<br>~~yp~~|—<br>~~ee~~<br>~~yp~~|—<br>~~ee~~<br>~~rr~~|V<br>~~ee~~<br>~~rr~~|IC= -100µA<br>~~ee~~<br>~~rr~~|
|Collector-Emitter Breakdown Voltage(Note 8)<br>~~th~~|BVCEO<br>~~th~~|-500<br>~~th~~<br>~~yp~~|—<br>~~th~~<br>~~yp~~|—<br>~~th~~<br>~~rr~~|V<br>~~th~~<br>~~rr~~|IC= -1mA<br>~~th~~<br>~~rr~~|
|Emitter-Base Breakdown Voltage<br>~~th~~|BVEBO<br>~~th~~|-7<br>~~th~~<br>~~yp~~|—<br>~~th~~<br>~~yp~~|—<br>~~th~~<br>~~rr~~|V<br>~~th~~<br>~~rr~~|IE= -100µA<br>~~th~~<br>~~rr~~|
|Collector Cutoff Current<br>~~ee~~|ICBO<br>~~ee~~|—<br>~~yp~~<br>~~ee~~|—<br>~~yp ~~<br>~~ee~~|-100<br> ~~rr~~<br>~~ee~~|nA<br>~~rr~~<br>~~ee~~|VCB= -500V<br>~~rr~~<br>~~ee~~|
|Emitter Cutoff Current<br>~~ee~~|IEBO<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|-100<br>~~ee~~|nA<br>~~ee~~|VEB= -5V<br>~~ee~~|
|Static Forward Current Transfer Ratio (Note 8)<br>~~ee~~|hFE<br>~~ee~~<br>~~ee~~|100<br>80<br>—<br>~~ee~~<br>~~ee~~|—<br>—<br>15<br>~~ee~~<br>~~ee~~|300<br>300<br>—<br>~~ee~~<br>~~ee~~|—<br>~~ee~~|IC= -1mA, VCE= -10V<br>IC= -50mA, VCE= -10V<br>IC= -100mA,VCE= -10V<br>~~ee~~<br>~~ee~~|
|Collector-Emitter Saturation Voltage (Note 8)<br>~~ee~~|VCE(SAT)<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|-200<br>-500<br>~~ee~~<br>~~ee~~<br>~~S(O~~|mV<br>~~ee~~<br>~~S(O~~|IC= - 20mA, IB= -2mA<br>IC= - 50mA,IB= -10mA<br>~~ee~~<br>~~ee~~|
|Base-Emitter Saturation Voltage(Note 8)<br>~~S(O~~|VBE(SAT)<br>~~ee ~~<br>~~S(O~~|—<br> ~~ee ~~<br>~~S(O~~|—<br> ~~ee ~~<br>~~S(O~~|-0.9<br> ~~ee~~<br>~~S(O~~<br>~~S(O~~<br>~~pr~~|V<br>~~S(O~~<br>~~S(O~~<br>~~pr~~|IC= -50mA,IB= -10mA<br>~~ee~~<br>~~S(O~~<br>~~pr~~|
|Base-Emitter Turn-On Voltage(Note 8)<br>~~i~~|VBE(ON)<br>~~i~~|—<br>~~i~~|—<br>~~i~~|-0.9<br>~~S(O~~<br>~~i~~<br>~~pr~~|V<br>~~S(O~~<br>~~i~~<br>~~pr~~|IC= -50mA,VCE= -10V<br>~~i~~<br>~~pr~~|
|Output Capacitance<br>~~i~~|COBO<br>~~i~~<br>~~es~~|—<br>~~i~~<br>~~ee~~|—<br>~~i~~<br>~~es~~|8<br>~~i~~<br>~~pr~~<br>~~ee~~|pF<br>~~i~~<br>~~pr~~<br>~~Ge~~|VCB= -20V,f = 1MHz<br>~~i~~<br>~~pr~~|
|Transition Frequency<br>~~ee~~|fT<br>~~ee~~<br>~~es~~|60<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~es~~|—<br>~~pr~~<br>~~ee~~<br>~~ee~~|MHz<br>~~pr~~<br>~~ee~~<br>~~Ge~~|VCE= -20V, IC= -10mA,<br>f = 50MHz<br>~~pr~~<br>~~ee~~|
|Turn-On Time<br>~~=~~|tON<br>~~es ~~<br>~~=~~|—<br> ~~ee ~~<br>~~=~~|110<br> ~~es ~~<br>~~=~~|—<br> ~~ee ~~<br>~~=~~|ns<br> ~~Ge~~<br>~~=~~|VCE= -100V, IC= -50mA,<br>IB1= -5mA,IB2= 10mA<br>~~=~~|
|Turn-Off Time<br>~~=~~|tOFF<br>~~=~~|—<br>~~=~~|1.5<br>~~=~~|—<br>~~=~~|µs<br>~~=~~||



4 of 7 **www.diodes.com** 

FMMT560 Document Number: DS33102 Rev. 7 - 2 

January 2016 © Diodes Incorporated 

**FMMT560** 

**Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

5 of 7 **www.diodes.com** 

FMMT560 Document Number: DS33102 Rev. 7 - 2 

January 2016 © Diodes Incorporated 

**FMMT560** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23** 

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**----- Start of picture text -----**<br>
All 7°<br>H<br>GAUGE PLANE SOT23<br>0.25 Dim  Min  Max  Typ<br>K1 K ey J ES A  0.37  0.51  0.40<br>B  1.20 1.40 1.30<br>C  2.30 2.50 2.40<br>a D  0.89  1.03  0.915<br>A tS M — F  0.45  0.60  0.535<br>ope~~  oe L L1 fr G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>Oo<br>C B ESE K1  0.903  1.10  1.025<br>L  0.45 0.61  0.55<br>}——|-—- ,7* —<br>L1  0.25 0.55 0.40<br>M  0.085 0.150 0.110<br>T D Oo —--+- a  0°  8°  + –  4<br>All Dimensions in mm<br>F G<br>yout out<br>for the latest version.<br>SOT23<br>Y<br>Dimensions  Value (in mm)<br>C  2.0<br>Y1 ty C<br>X  0.8<br>X1  1.35<br>Y  0.9<br>Y1  2.9<br>fa ee<br>Pd X Lo X1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking. 

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FMMT560 Document Number: DS33102 Rev. 7 - 2 

January 2016 © Diodes Incorporated 

**www.diodes.com** 

**FMMT560** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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FMMT560 Document Number: DS33102 Rev. 7 - 2 

January 2016 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/fmmt560/transistor-pnp-sot-23/dp/9525114)
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