# Bipolar (BJT) Single Transistor, NPN, 400 V, 225 mA, 500 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:9526684/)

**URL**: https://novapart.co/products/FMMT458/bipolar-bjt-single-transistor-npn-400-v-225-ma-500
**SKU**: FMMT458
**Manufacturer**: DIODES INC.
**Price**: €0.1530
**Stock**: 10+
**Lead Time**: 302 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:50MHz; Power Dissipation Pd:500mW; DC Collector Current:225mA; DC Current Gain hFE:100hFE; Transistor Cas

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 500mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 50MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 225mA |
| Collector Emitter Voltage Max | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9526684/)

**FMMT458** rid **400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23** 

## DIODES, 

## **Features** 

- BVCEO > 400V 

- IC = 225mA High Continuous Collector Current 

- ICM = 1A Peak Pulse Current 

- 500mW Power Dissipation 

- Excellent hFE Characteristics Up to 100mA 

- Complementary PNP Type: FMMT558 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

## **Mechanical Data** 

   - Package: SOT23 

   - Package Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish - Matte Tin Plated Leads, Solderable per MILSTD-202, Method 208 **e3** 

   - Weight: 0.008 grams (Approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (FMMT458Q)** 

**==> picture [356 x 122] intentionally omitted <==**

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SOT23  C E<br>C<br>B<br>BB<br>E<br>Top View  Device Symbol  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|---|---|---|
||||||||
|**Part Number**|**Package**|**Marking Code**|**Reel Size (inches)**|**Tape Width (mm)**|**Packing**||
||||||**Qty. **|**Carrier**|
|FMMT458TA|SOT23|458|7|8|3,000|Reel|
|FMMT458TC|SOT23|458|13|8|10,000|Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

458 = Product Type Marking Code 

1 of 7 **www.diodes.com** 

FMMT458 Document number: DS33088 Rev. 8 - 2 

July 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. 

**FMMT458** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|400|V|
|Collector-Emitter Voltage|VCEO|400|V|
|Emitter-Base Voltage|VEBO|7|V|
|Continuous Collector Current|IC|225|mA|
|Peak Pulse Current|ICM|1|A|
|Base Current|IB|200|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 5)|PD|500|mW|
|Thermal Resistance, Junction to Ambient (Note 5)|RθJA|250|°C/W|
|Thermal Resistance, Junction to Lead (Note 6)|RθJL|197|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 7) 

|**ESD Ratingsgss **(Note 7)|**ESD Ratingsgss **(Note 7)|**ESD Ratingsgss **(Note 7)|**ESD Ratingsgss **(Note 7)|**ESD Ratingsgss **(Note 7)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|ElectrostaticDischarge- Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|≥ 400|V|C|



Notes: 5. For a device surface mounted on 15mm X 15mm X 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 

6. Thermal resistance from junction to solder-point (at the end of the collector lead). 

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

2 of 7 **www.diodes.com** 

FMMT458 Document number: DS33088 Rev. 8 - 2 

July 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. 

**FMMT458** 

## **Thermal Characteristics and Derating Information** 

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0.6<br>15 x 15mm FR-4 1oz Copper<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0 25 50 75 100 125 150<br> Temperature (°C)<br>Figure 2. Derating Curve Derating CurveDerating Curve<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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V 15 x 15mm FR-4 1oz Copper 15 x 15mm FR-4 1oz Copper<br>1 CE(sat) nnil<br>Limited 0.5<br>0.4<br>eNO NESS<br>100m<br>FES DC SEER INES SEES 0.3<br>1s<br>po NONSENSE<br>Pitty 100ms Ee ee| 0.2<br>10m<br>10ms<br>| Single Pulse Petty 1ms Pitty SAIN 0.1<br>T amb =25°C 100µs<br>1m EERi Ci thoNNTty 0.0<br>1 10 100 0 25 50 75 100 125 150<br>VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Figure 1. Safe Operating Area Safe Operating Area Figure 2. Derating Curve Derating CurveDerating Curve<br>100<br>250 15 x 15mm FR-4 1oz Copper 15 x 15mm FR-4 1oz Copper<br>200 T amb =25°C HHH HeeLA, HH SErg Single PulseT omc amb =25°C<br>UTI PWSTFHEEAHHAA<br>EET ETAT Zea UII i 10 NUEATUIME THT T T I ll<br>150 D=0.5 go eT |e II TM ET EH CHS H<br>100 y Te Single Pulse<br>Bn eS 1<br>D=0.2 D=0.05<br>50 aaertt || i LL AY nae! —| Cnnner<br>0 BapeeSealMAA D=0.1 ere 0.1 eVCTV CUI EI GT CTV CTA<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>  Collector Current (A)<br>IC<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


**Transient Thermal Impedance Figure 3. Transient Thermal Impedance** 

**Pulse Power Dissipation Figure 4. Pulse Power Dissipation** 

3 of 7 **www.diodes.com** 

FMMT458 Document number: DS33088 Rev. 8 - 2 

July 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. 

**FMMT458** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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**----- Start of picture text -----**<br>
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|a|Ge|COD|QO|GO|
|a|Collector-Base Breakdown Voltage|GG|BVCBO|400|—|—|V|IC = 100µA|
|a|Collector-Emitter Breakdown Voltage (Note 8)|BVCEO|GO|400|GO|—|—|V|(OO|IC = 10mA|
|GG|Emitter-Base Breakdown Voltage|BVEBO|7|—|—|V|IE|= 100µA|
|a|Collector Cutoff Current|GG|ICBO|—|—|100|nA|CO(OO|VCB = 320V|
|GG|Emitter Cutoff Current|IEBO|—|—|100|nA|CO|VEB = 5.6V|
|Collector Emitter Cutoff Current|ICES|—|—|100|nA|VCE = 320V|
|100|IC|= 1mA, VCE = 10V|
|Static Forward Current Transfer Ratio (Note 8)|hFE|100|—|300|—|IC = 50mA, VCE = 10V|
|15|IC = 100mA, VCE = 10V|
|rees|Collector-Emitter Saturation Voltage (Note 8)|V|ee|CE(sat)|—|—|200 500|mV mV|IICC = 20mA, I = 50mA, IB B = 6mA = 2mA|
|a|Base-Emitter Turn-On Voltage (Note 8)|ee|VBE(on)|—|ee|—|0.9|V|IC|= 50mA, VCE = 10V|
|a|Base-Emitter Saturation Voltage (Note 8)|VBE(|GO|sat)|—|—|0.9|GO|V|QO|IC|= 50mA, IB = 5mA|
|a|Output Capacitance|Cobo|GO|—|GO|—|5|GO|pF|GO|VCB = 20V, f = 1MHz|
|VCE = 20V, IC = 10mA,|
|Transition Frequency|fT|50|—|—|MHz|
|ee|f = 20MHz|
|A|Turn-On Time|ee|ton|ee|—|135|—|ns|VCE = 100V, IC = 50mA|
|a|Turn-Off Time|toff|st|—|2260|—|tH|ns|IB1 = 5mA, IB2 = -10mA|
|Note:|8. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.|

**----- End of picture text -----**<br>


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FMMT458 Document number: DS33088 Rev. 8 - 2 

July 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. 

**FMMT458** | 

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LODE.<br>**----- End of picture text -----**<br>


## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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– (Volts)<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
– (Volts)<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


**Figure 5. VCE(sat) v IC** 

**Figure 6. VCE(sat) v IC** 

**Figure 7. hFE v IC** 

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**----- Start of picture text -----**<br>
sof7 FEE ees<br>0.2 — HI E<br>Cen ni i<br>° 6.001 0.01 0.1 1<br>Ic - Collector Current (Amps)<br>Figure 8. VBE(sat) v IC<br>– (Volts)<br>BE(sat)<br>V<br>**----- End of picture text -----**<br>


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1.0. EH N<br>0.8 eee ee<br>O6<br>oa Tale<br>02 ee ast cn<br>20<br>J<br>0.001 0.01 0.1 1<br>Ic- Collector Current (Amps)<br>Figure 9. VBE(on) v IC<br> – (Volts)<br>BE(on)<br>V<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

FMMT458 Document number: DS33088 Rev. 8 - 2 

July 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. 

**FMMT458** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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**----- Start of picture text -----**<br>
SOT23<br>**----- End of picture text -----**<br>


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All 7° SOT23<br>H Dim  Min  Max  Typ<br>GAUGE  PLANE A  0.37  0.51  0.40<br>0.25 B  1.20 1.40 1.30<br>J<br>K1 K C  2.30 2.50 2.40<br>D  0.89 1.03 0.915<br>a F  0.45 0.60 0.535<br>A M G  1.78 2.05 1.83<br>H  2.80 3.00 2.90<br>L L1<br>—a t f Ay ee J  0.0 ee 13 0 ee .10 0.05<br>K  0.890 1.00 0.975<br>K1  0.903 1.10 1.025<br>C se B Le —= L1 L  00.4.255 00..6551  00..4550<br>M  0.085 0.150 0.110<br>a  0°  8°  --<br>== aanNN All Dimensions in mm<br>D<br>F G<br>ggested Pad Layout ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT23<br>Dimensions  Value (in mm)<br>Y<br>C  2.0<br>X  0.8<br>X1  1.35<br>Y1 Hf C Y  0.9<br>A eH Y1  2.9<br>Pou X X1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout ested Pad Layout yout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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FMMT458 Document number: DS33088 Rev. 8 - 2 

July 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. 

**FMMT458** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functionalsafety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

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6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-andconditions/important-notice 

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners. 

- © 2023 Diodes Incorporated. All Rights Reserved. 

## **www.diodes.com** 

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FMMT458 Document number: DS33088 Rev. 8 - 2 

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- [Supplier page](https://es.farnell.com/diodes-inc/fmmt458/transistor-npn-sot-23/dp/9526684)
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