# Bipolar Transistor Array, Dual NPN, 40 V, 200 mA, 700 mW

![Product image](https://novapart.co/image/farnell:2454635/)

**URL**: https://novapart.co/products/FMB3904/bipolar-transistor-array-dual-npn-40-v-200-ma-700
**SKU**: FMB3904
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.1020
**Stock**: 1000+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:700mW; DC Collector Current:200mA; DC Current Gain hFE:40hFE; Transistor Case Style:SOT-23; No.

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual NPN |
| Power Dissipation Npn | 700mW |
| Power Dissipation Pnp | - |
| Transistor Case Style | SOT-23 |
| Transition Frequency Npn | 250MHz |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 40hFE |
| Dc Current Gain Hfe Min Pnp | - |
| Continuous Collector Current Npn | 200mA |
| Continuous Collector Current Pnp | - |
| Collector Emitter Voltage Max Npn | 40V |
| Collector Emitter Voltage Max Pnp | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2454635/)

## **ON Semiconductor** 

## **Is Now** 

**==> picture [390 x 69] intentionally omitted <==**

**To learn more about onsemi™, please visit our website at www.onsemi.com** 

**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

## **FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier** 

## **Description** 

This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. 

**==> picture [438 x 365] intentionally omitted <==**

**----- Start of picture text -----**<br>
Block Diagram<br>E2 E2 C2<br>B2<br>C1<br>B2 B1<br>C2<br>SC70-6 B1<br>Mark: .1A pin #1 E1 C1 E1<br>The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier tape<br>¢<br>can be of either orientation (0 deg and 180 deg) and will not affect the functionality of the device.<br>Figure 1. FFB3904 Device Package  Figure 2. FFB3904 Internal Connection<br>C2<br>E1<br>C1 C2 B2<br>B2 E1 E2<br>¢ E2<br>pin #1 B1<br>SuperSOT ™ -6 C1 B1<br>Mark: .1A<br>2<br>Dot denotes pin #1<br>Figure 3. FMB3904 Device Package Figure 4. FMB3904 Internal Connection<br>E1 B1 E2 B2 E3 B3 E4 B4<br>B3 [E4B4]<br>E3<br>B2<br>E2<br>B1<br>E1<br>C3 [C4C4]<br>SOIC-16 pin #1 C1 [C1C2C2C3] C1 C1 C2 C2 C3 C3 C4 C4<br>Mark: MMPQ3904<br>**----- End of picture text -----**<br>


**Figure 5. MMPQ3904 Device Package** 

**Figure 6. MMPQ3904 Internal Connection** 

© 1998 Semiconductor Components Industries, LLC. December-2017, Rev. 3 

Publication Order Number: FFB3904/D 

1 

## **Ordering Information** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|FFB3904|.1A|SC70 6L|Tape and Reel|
|FMB3904|.1A|SSOT 6L|Tape and Reel|
|MMPQ3904|MMPQ3904|SOIC 16L|Tape and Reel|



## **Absolute Maximum Ratings**[(1)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCEO|Collector-Emitter Voltage|40|V|
|VCBO|Collector-Base Voltage|60|V|
|VEBO|Emitter-Base Voltage|6.0|V|
|IC|Collector Current - Continuous|200|mA|
|TJ, TSTG|Operating and Storage Junction Temperature Range|-55 to +150|°C|



## **Note:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. 

## **Thermal Characteristics**[(2)] 

Values are at TA = 25°C unless otherwise noted. 

|Values are at|TA= 25°C unless otherwise noted.|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Max.**|||**Unit**|
|||**FFB3904**|**FMB3904**|**MMPQ3904**||
|PD|Total Device Dissipation|300|700|1,000|mW|
||Derate above 25°C|2.4|5.6|8.0|mW/°C|
|RθJA|Thermal Resistance, Junction to Ambient|415|180||°C/W|
||Thermal Resistance, Junction to Ambient,<br>Effective 4 Die|||125||
||Thermal Resistance, Junction to Ambient,<br>Each Die|||240||



## **Note:** 

2. PCB size: FR-4 76 x 114 x 0.6T mm[3] (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 

www.onsemi.com 

2 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Off Characteristics**||||||||
|V|Collector-Emitter Breakdown Voltae||I= 10 mA I= 0|40|||V|
|(BR)CEO|g||C. ,B|||||
|V(BR)CBO|Collector-Base Breakdown Voltage||IC= 10μA, IE= 0|60|||V|
|V(BR)EBO|Emitter-Base Breakdown Voltage||IE= 10μA, IC= 0|6.0|||V|
|IBL|Base Cut-Off Current||VCE= 30 V, VBE= -3 V|||50|nA|
|ICEX|Collector Cut-Off|Current|VCE= 30 V, VBE= -3 V|||50|nA|
|**On Characteristics**(3)||||||||
|hFE|DC Current Gain|FFB3904, FMB3904|IC= 0.1 mA, VCE= 1.0 V|40||||
|||MMPQ3904||30||||
|||FFB3904, FMB3904|IC= 1.0 mA, VCE= 1.0 V|70||||
|||MMPQ3904||50||||
|||FFB3904, FMB3904|IC= 10 mA, VCE= 1.0 V|100||300||
|||MMPQ3904||75||||
|||All Devices|IC= 50 mA, VCE= 1.0 V|60||||
|||All Devices|IC= 100 mA, VCE= 1.0 V|30||||
|VCE(sat)|Collector-Emitter|Saturation Voltage|IC= 10 mA, IB= 1.0 mA|||0.2|V|
||||IC= 50 mA, IB= 5.0 mA|||0.3||
|VBE(sat)|Base-Emitter Saturation Voltage||IC= 10 mA, IB= 1.0 mA|0.65||0.85|V|
||||IC= 50 mA, IB= 5.0 mA|||0.95||
|**Small-Signal Characteristics (MMPQ3904 only)**||||||||
|fT|Current Gain-Bandwidth Product||IC= 10 mA, VCE= 20 V,<br>f = 100 MHz||250||MHz|
|Cob|Output Capacitance||VCB= 5.0 V, IE= 0,<br>f = 140 kHz||4.0||pF|
|Cib|Input Capacitance||VBE= 0.5 V, IC= 0,<br>f = 140 kHz||8.0||pF|



## **Note:** 

3. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0%. 

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3 

## **Typical Performance Characteristics** 

**==> picture [420 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
500<br>400 V     = 5VCE  0.15 β   = 10<br>125 °C 125 °C<br>300<br>25  °C 0.1<br>200<br>25 °C<br>100 - 40  ° C 0.05<br>- 40 °C<br>0<br>0.1 1 10 100 0.1 1 10 100<br>I    - COLLECTOR CURRENT  (mA)C I    - COLLECTOR CURRENT  (mA)C<br>h     - TYPICAL PULSED CURRENT GAINFE CESAT<br>V       - COLLECTOR-EMITTER VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 7. Typical Pulsed Current Gain vs. Collector Current** 

**Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current** 

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**----- Start of picture text -----**<br>
1 β = 10<br>0.8 - 40  ° C<br>25 °C<br>0.6<br>125 °C<br>0.4<br>0.1 1 10 100<br>I    - COLLECTOR CURRENT  (mA)C<br>BESAT<br>V       - BASE-EMITTER VOLTAGE (V)<br>**----- End of picture text -----**<br>


**==> picture [188 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>V      CE  = 5V<br>0.8<br>- 40 °C<br>25 °C<br>0.6<br>125 °C<br>0.4<br>0.2<br>0.1 1 10 100<br>I    - COLLECTOR CURRENT  (mA)C<br>BE(ON)<br>V       - BASE-EMITTER ON VOLTAGE (V)<br>**----- End of picture text -----**<br>


## **Figure 9. Base-Emitter Saturation Voltage vs. Collector Current** 

**Figure 10. Base-Emitter On Voltage vs. Collector Current** 

**==> picture [190 x 120] intentionally omitted <==**

**----- Start of picture text -----**<br>
500<br>100 V CB= 30V<br>10<br>1<br>0.1<br>25 50 75 100 125 150<br>T   - AMBIENT TEMPERATURE ( C)A °<br>I     - COLLECTOR CURRENT (nA)CBO<br>**----- End of picture text -----**<br>


**==> picture [184 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>f = 1.0 MHz<br>5<br>4<br>C  ib<br>3<br>2<br>Cob<br>1<br>0.1 1 10 100<br>REVERSE BIAS VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 11. Collector Cut-Off Current vs. Ambient Temperature** 

**Figure 12. Capacitance vs. Reverse Bias Voltage** 

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4 

## **Typical Performance Characteristics** (Continued) 

**==> picture [185 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
12<br>I      C = 1.0 mA V     = 5.0V CE<br>10  R     = 200 S Ω<br>I     = 50  C μ A<br>8  R     = 1.0 k S Ω<br>I     = 0.5 mAC<br>6  R     = 200S Ω<br>4<br>2<br>I     = 100 C μ A, R     = 500 S Ω<br>0<br>0.1 1 10 100<br>f  - FREQUENCY (kHz)<br>NF  - NOISE FIGURE (dB)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
12<br>I    = 1.0 mA C<br>10<br>I    = 5.0 mA C<br>8 I    = 50  C μ A<br>6<br>4 I    = 100 C μ A<br>2<br>0<br>0.1 1 10 100<br>R     - SOURCE RESISTANCE (      )S k Ω<br>NF  - NOISE FIGURE (dB)<br>**----- End of picture text -----**<br>


**Figure 13. Noise Figure vs. Frequency** 

**Figure 14. Noise Figure vs. Source Resistance** 

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**----- Start of picture text -----**<br>
50 0<br>45 h fe 20<br>40 40<br>35 60<br>30 80<br>25 θ 100<br>20 120<br>15 140<br>10 V      CE = 40V 160<br>5 I     C = 10 mA 180<br>0<br>1 10 100 1000<br>f - FREQUENCY (MHz)<br>θ<br> - DEGREES<br>fe<br>h      - CURRENT GAIN (dB)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1<br>SOIC-16<br>0.75 SOT-6<br>0.5<br>SC70-6<br>0.25<br>0<br>0 25 50 75 100 125 150<br>TEMPERATURE (  C)°<br>D<br>P   - POWER DISSIPATION (W)<br>**----- End of picture text -----**<br>


**Figure 15. Current Gain and Phase Angle vs. Frequency** 

**Figure 16. Power Dissipation vs. Ambient Temperature** 

**==> picture [186 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
500<br>I    = I    = B1 B2 10 I c<br>40V<br>100 15V<br>t      r @ V     = 3.0V CC<br>2.0V<br>10<br>t d @ V     = CB 0V<br>5<br>1 10 100<br>I      - COLLECTOR CURRENT (mA)C<br>TIME  (nS)<br>**----- End of picture text -----**<br>


**==> picture [189 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
500<br>V     = 40VCC I    = I    = B1 B2 10 I c<br>100<br>T    = 25°CJ<br>T    = 125 J °C<br>10<br>5<br>1 10 100<br>I      - COLLECTOR CURRENT (mA)C<br>r<br>t    - RISE TIME  (ns)<br>**----- End of picture text -----**<br>


**Figure 17. Turn-On Time vs. Collector Current** 

**Figure 18. Rise Time vs. Collector Current** 

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## **Typical Performance Characteristics** (Continued) 

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**----- Start of picture text -----**<br>
500<br>T    = 25°CJ I    = I    = B1 B2 10 I c<br>100<br>T    = 125J °C<br>10<br>5<br>1 10 100<br>I      - COLLECTOR CURRENT (mA)C<br>S<br>t    - STORAGE TIME  (ns)<br>**----- End of picture text -----**<br>


**==> picture [189 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
500<br>I    = I    = B1 B2 10 I c<br>T    = 125J ° C V     = 40V CC<br>100<br>T    = 25J ° C<br>10<br>5<br>1 10 100<br>I      - COLLECTOR CURRENT (mA)C<br>f<br>t    - FALL TIME  (ns)<br>**----- End of picture text -----**<br>


**Figure 19. Storage Time vs. Collector Current** 

**Figure 20. Fall Time vs. Collector Current** 

**==> picture [191 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
500<br>V     = 10 VCE<br> f = 1.0 kHz<br>T    = 25 CA  o<br>100<br>10<br>0.1 1 10<br>I   - COLLECTOR CURRENT (mA)C<br>Figure 21. Current Gain<br>fe<br>h    - CURRENT GAIN<br>**----- End of picture text -----**<br>


**==> picture [188 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>V     = 10 V CE<br> f = 1.0 kHz<br>T    = 25 C A  o<br>10<br>1<br>0.1 1 10<br>I   - COLLECTOR CURRENT (mA)C<br>oe<br>μ<br>h    - OUTPUT ADMITTANCE (  mhos)<br>**----- End of picture text -----**<br>


**Figure 22. Output Admittance** 

**==> picture [189 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>V     CE = 10 V<br> f = 1.0 kHz<br>T    = 25 C A  o<br>10<br>1<br>0.1<br>0.1 1 10<br>I   - COLLECTOR CURRENT (mA)C<br>ie<br>h    - INPUT IMPEDANCE (k   ) Ω<br>**----- End of picture text -----**<br>


**Figure 23. Input Impedance** 

**==> picture [191 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>V     = 10 V CE<br> f = 1.0 kHz<br>7 T    = 25 CA  o<br>5<br>4<br>3<br>2<br>1<br>0.1 1 10<br>I   - COLLECTOR CURRENT (mA)C<br>_ 4<br>re<br>h    - VOLTAGE FEEDBACK RATIO (x10    )<br>**----- End of picture text -----**<br>


**Figure 24. Voltage Feedback Ratio** 

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6 

## **Physical Dimensions** 

**==> picture [318 x 445] intentionally omitted <==**

**----- Start of picture text -----**<br>
SC70 6L<br>SYMM<br>CL<br>2.00±0.20 A 0.65<br>0.50 MIN<br>6 4 B<br>PIN ONE<br>1.25±0.10 1.90<br>1 3<br>(0.25) 0.300.15 0.40 MIN<br>0.10 A B 1.30<br>0.65<br>LAND PATTERN RECOMMENDATION<br>1.30<br>1.00 SEE DETAIL A<br>0.80<br>1.10<br>0.80<br>0.10 0.10 C<br>C 0.00<br>2.10±0.30<br>SEATING<br>PLANE<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>GAGE A) THIS PACKAGE CONFORMS TO EIAJ<br>PLANE SC-88, 1996.<br>(R0.10)<br>B) ALL DIMENSIONS ARE IN MILLIMETERS.<br>0.25    C) DIMENSIONS DO NOT INCLUDE BURRS<br>0.10        OR MOLD FLASH.<br>0.20 D) DRAWING FILENAME: MKT-MAA06AREV6<br>0.46 30°<br>0.26 0°<br>SCALE: 60X<br>**----- End of picture text -----**<br>


**Figure 25. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE)** 

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7 

**==> picture [259 x 62] intentionally omitted <==**

**----- Start of picture text -----**<br>
Physical Dimensions  (Continued)<br>SSOT 6L<br>**----- End of picture text -----**<br>


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**==> picture [43 x 48] intentionally omitted <==**

**Figure 26. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE)** 

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**----- Start of picture text -----**<br>
Physical Dimensions  (Continued)<br>SO 16L NB<br>10.00<br>A<br>9.80<br>8.89<br>16 9<br>B 1.75<br>4.00<br>6.00 5.6<br>3.80<br>1 8<br>PIN ONE<br>INDICATOR 1.27 0.51<br>0.35 1.27 0.65<br>(0.30) 0.25 M C B A LAND PATTERN RECOMMENDATION<br>1.75 MAX<br>1.50 SEE DETAIL A<br>1.25<br>0.25 C 0.25<br>0.10 0.19<br>0.10 C<br>0.50<br> X 45°<br>0.25<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>(R0.10)<br>GAGE PLANE A) THIS PACKAGE CONFORMS TO JEDEC<br>(R0.10) B) MS-012, VARIATION AC, ISSUE C.ALL DIMENSIONS ARE IN MILLIMETERS.<br>8° 0.36 C) DIMENSIONS ARE EXCLUSIVE OF  BURRS, MOLD<br>0° FLASH AND TIE BAR PROTRUSIONS<br>D) CONFORMS TO ASME Y14.5M-1994<br>E) LANDPATTERN STANDARD: SOIC127P600X175-16AM<br>F) DRAWING FILE NAME: M16AREV12.<br>0.90 SEATING PLANE<br>0.50<br>(1.04)<br>DETAIL A<br>SCALE: 2:1<br>**----- End of picture text -----**<br>


**Figure 27. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (ACTIVE)** 

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9 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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