# General-Purpose Amplifier, NPN, PNP, 30 V, 700 mW, 500 mA, 50, SuperSOT
**URL**: https://novapart.co/products/FMB2227A/general-purpose-amplifier-npn-pnp-30-v-700-mw-500
**SKU**: FMB2227A
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.1150
**Stock**: 10+
**Lead Time**: 134 days (indicative)
## Description
Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:700mW; DC Collector Current:500mA; DC Current Gain hFE:50hFE; Transistor Case Style:Sup
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Complementary NPN and PNP |
| Power Dissipation Npn | 700mW |
| Power Dissipation Pnp | 700mW |
| Transistor Case Style | SuperSOT |
| Transition Frequency Npn | 250MHz |
| Transition Frequency Pnp | 250MHz |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 50hFE |
| Dc Current Gain Hfe Min Pnp | 50hFE |
| Continuous Collector Current Npn | 500mA |
| Continuous Collector Current Pnp | 500mA |
| Collector Emitter Voltage Max Npn | 30V |
| Collector Emitter Voltage Max Pnp | 30V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2454634/)
## **ON Semiconductor**
## **Is Now**
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**To learn more about onsemi™, please visit our website at www.onsemi.com**
**onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
## **FFB2227A / FMB2227A NPN & PNP General-Purpose Amplifier**
## **Description**
This complementary device is a medium-power amplifier and switch, requiring collector currents up to 500 mA. Sourced from Process 19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics.
**==> picture [470 x 70] intentionally omitted <==**
**----- Start of picture text -----**
Ordering Information
Part Number Top Mark Package Packing Method
FFB2227A AA SC70 6L Tape and Reel
FMB2227A 001 SSOT 6L Tape and Reel
op
**----- End of picture text -----**
## **Block Diagram**
**==> picture [412 x 233] intentionally omitted <==**
**----- Start of picture text -----**
C2
E2 E1
B2 C1
C1
SuperSOT [TM] -6
SC70-6 C2 B2 Mark: .001
Mark: .AA “ B1 E2 Dot denotes pin#1
Dot denotes pin#1 Pin#1 E1 pin#1 B1
FFB2227A Device Package
FMB2227A Device Package
C1 B2 E2
C1 E1 C2
TRANSISTOR TYPE
C1 B1 E1 NPN
C2 B2 E2 PNP
E1 B1 C2
as B1 E2 B2
FFB2227A Internal Connection FMB2227A Internal Connection
Figure 1. Block Diagram
**----- End of picture text -----**
Publication Order Number: FFB2227A/D
© 1998 Semiconductor Components Industries, LLC. November-2017, Rev. 2
1
## **Absolute Maximum Ratings**[(1)]
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
|**Symbol**|**Parameter**|**Value**|**Units**|
|---|---|---|---|
|VCEO|Collector-Emitter Voltage|30|V|
|VCBO|Collector-Base Voltage|60|V|
|VEBO|Emitter-Base Voltage|5|V|
|IC|Collector Current - Continuous|500|mA|
|TJ,TSTG|Operating and Storage Junction Temperature Range|- 55 to +150|°C|
## **Notes:**
1. These ratings are based on a maximum junction temperature of 150 ° C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations.
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
4. These Ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
## **Thermal Characteristics**[(2)]
Values are at TA = 25°C unless otherwise noted.
|Values are at|TA= 25°C unless otherwise noted.||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Maximum**||**Units**|
|||**FFB2227A**|**FMB2227A**||
|PD|Total Device Dissipation|300|700|mV|
||Derate Above 25°C|2.4|5.6|mV/°C|
|RθJA|Thermal Resistance, Junction to Ambient|415|180|°C/W|
## **Note:**
2. PCB board size: FR-4 76 x 114 x 0.6T mm[3] (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
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2
## **Electrical Characteristics**[(3)]
|**Electrical Characteristics**(3)|**Electrical Characteristics**(3)||||||
|---|---|---|---|---|---|---|
|Values are at TA= 25°C unless otherwise noted.|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**|
|OFF CHARACTERISTICS|||||||
||Collector-Emitter Breakdown||||||
|V(BR)CEO|Voltage(4)|IC= 10 mA, IB= 0|30|||V|
|V(BR)CBO|Collector-Base Breakdown
Voltage|IC= 10μA, IE= 0|60|||V|
|V(BR)EBO|Emitter-Base Breakdown Voltage|IE= 10μA, IC= 0|5|||V|
|ICBO|Collector Cut-Off Current|VCB= 50 V, IE= 0|||30|nA|
|IEBO|Emitter Cut-Off Current|VEB= 3.0 V, IC= 0|||30|nA|
|ON CHARACTERISTICS|||||||
|hFE|DC Current Gain|IC= 1.0 mA, VCE= 10 V|50||||
|||IC= 10 mA, VCE= 10 V|75||||
|||IC= 150 mA, VCE= 10 V(4)|100||||
|||IC= 300 mA, VCE= 10 V(4)|30||||
|VCE(sat)|Collector-Emitter Saturation
Voltage(4)|IC= 150 mA, IB= 15 mA|||0.4|V|
|||IC= 300 mA, IB= 30 mA|||1.4|V|
|VBE(sat)|Base-Emitter Saturation
Voltage(4)|IC= 150 mA, IB= 15 mA|||1.3|V|
|SMALL SIGNAL CHARACTERISTICS|||||||
|fT|Current Gain - Bandwidth Product|IC= 50 mA, VCE= 20 V,
f = 100 MHz||250||MHz|
|Cobo|Output Capacitance|VCB= 10 V, IE= 0, f = 100 kHz||4.0||pF|
|Cibo|Input Capacitance|VEB= 2.0 V, IC= 0, f = 100 kHz||12||pF|
|NF|Noise Figure|IC= 100μA, VCE= 10 V,
RS= 1.0 kΩ, f = 1.0 kHz||2.0||dB|
|SWITCHING CHARACTERISTICS|||||||
|ton|Turn-on Time|VCC= 30 V, IC= 150 mA,
IB1= 15 mA||30||ns|
|td|Delay Time|||8.0||ns|
|tr|Rise Time|||20||ns|
|toff|Turn-off Time|VCC= 6.0 V, IC= 150 mA,
IB1= IB2= 15 mA||80||ns|
|ts|Storage Time|||60||ns|
|tf|Fall Time|||20||ns|
## **Notes:**
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
4. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0%.
www.onsemi.com 3
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**----- Start of picture text -----**
Physical Dimensions
SC70 6L
SYMM
CL
2.00±0.20 A 0.65
0.50 MIN
6 4 B
PIN ONE
1.25±0.10 1.90
1 3
(0.25) 0.300.15 0.40 MIN
0.10 A B 1.30
0.65
LAND PATTERN RECOMMENDATION
1.30
1.00 SEE DETAIL A
0.80
1.10
0.80
0.10 0.10 C
C 0.00
2.10±0.30
SEATING
PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE A) THIS PACKAGE CONFORMS TO EIAJ
PLANE SC-88, 1996.
(R0.10)
B) ALL DIMENSIONS ARE IN MILLIMETERS.
0.25 C) DIMENSIONS DO NOT INCLUDE BURRS
0.10 OR MOLD FLASH.
0.20 D) DRAWING FILENAME: MKT-MAA06AREV6
0.46 30°
0.26 0°
SCALE: 60X
**----- End of picture text -----**
**Figure 2. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE)**
_Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products._
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4
## **Physical Dimensions** (Continued)
**==> picture [430 x 475] intentionally omitted <==**
**----- Start of picture text -----**
SSOT 6L
**----- End of picture text -----**
## **Figure 3. 6-LEAD, SUPER SOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE)**
_Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products._
www.onsemi.com
5
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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