# Power MOSFET, N Channel, 60 V, 100 mA, 6 ohm, SMini3-F2-B, Surface Mount
**URL**: https://novapart.co/products/FK3506010L/power-mosfet-n-channel-60-v-100-ma-6-ohm-smini3-f2
**SKU**: FK3506010L
**Manufacturer**: PANASONIC
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0230
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 150mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 150mW |
| Rds(On) Test Voltage | 4V |
| On Resistance Rds(On) | 6ohm |
| Transistor Case Style | SMini3-F2-B |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 85°C |
| Continuous Drain Current Id | 100mA |
| Drain Source On State Resistance | 6ohm |
| Gate Source Threshold Voltage Max | 1.2V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2284069/)
Doc No. TT4-EA-12624 Revision. 3
MOS FET FK3506010L
Product Standards
## FK3506010L
## Silicon N-channel MOS FET
**==> picture [488 x 480] intentionally omitted <==**
**----- Start of picture text -----**
Unit : mm
For switching 2.0
FK330601 in SMini3 type package 0.3 0.13
3
Features
Low drive voltage : 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1 2
Marking Symbol : CV
0.9
Packaging (0.65)(0.65)
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1.3
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25C Panasonic SMini3-F2-B
Parameter Symbol Rating Unit JEITA SC-85
Drain-source voltage VDS 60 V Code ―
Gate-source voltage VGS 12 V
Drain current ID 100 mA
Pulse drain current IDp 200 mA Internal Connection
Total power dissipation PD 150 mW (D)
Channel temperature Tch 150 C 3
Operating ambient temperature Topr -40 to +85 C
Storage temperature Tstg -55 to +150 C
1 2
(G) (S)
Pin Name
1. Gate
2. Source
3. Drain
1.25 2.1
**----- End of picture text -----**
**==> picture [154 x 48] intentionally omitted <==**
Page 1 of 5
Established : 2010-06-07 Revised : 2013-07-08
Doc No. TT4-EA-12624 Revision. 3
MOS FET FK3506010L
Product Standards
## Electrical Characteristics Ta = 25C 3C
|Electrical Characteristics Ta = 25C|3C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Min|Typ|Max|Unit|
|Drain-source breakdown voltage|VDSS|ID = 1 mA,VGS = 0|60|||V|
|Drain-source cutoff current|IDSS|VDS = 60 V,VGS = 0|||1.0|A|
|Gate-source cutoff current|IGSS|VGS =10 V,VDS = 0|||10|A|
|Gate threshold voltage|VTH|ID = 1.0A,VDS = 3.0 V|0.9|1.2|1.5|V|
|Drain-source ON resistance|RDS(on)|ID = 10 mA,VGS = 2.5 V||8|15||
|||ID = 10 mA,VGS = 4.0 V||6|12||
|Forward transfer admittance||Yfs||ID = 10 mA,VDS = 3.0 V|20|60||mS|
|Input capacitance|Ciss|VDS = 3 V, VGS = 0, f = 1 MHz||12||pF|
|Output capacitance|Coss|||7||pF|
|Reverse transfer capacitance|Crss|||3||pF|
|Turn-on time*1|ton|VDD = 3 V, VGS = 0 to 3 V,
ID = 10 mA||100||ns|
|Turn-off time*1|toff|ID = 10 mA
VDD = 3 V, VGS = 3 to 0 V,||100||ns|
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Turn-on and Turn-off test circuit
**==> picture [454 x 201] intentionally omitted <==**
**----- Start of picture text -----**
VDD=3V
ID=10mA
RL=300Ω
90%
V GS 10% D Vout
Vin
10% VGS=0～3V G
V out
50Ω
90% S
ton toff
**----- End of picture text -----**
Page 2 of 5
Established : 2010-06-07 Revised : 2013-07-08
Doc No. TT4-EA-12624 Revision. 3
Product Standards
## MOS FET FK3506010L
**==> picture [221 x 620] intentionally omitted <==**
**----- Start of picture text -----**
ID - VDS
0.1
4.0 V
0.08
2.5 V
0.06
0.04
0.02
VGS = 2.0 V
0
0 0.5 1 1.5
Drain-source Voltage VDS (V)
VDS - VGS
0.3
0.2
5 mA
ID = 20 mA
0.1
10 mA
0
2 3 4 5
Gate-source voltage VGS (V)
Capacitance - VDS
100
Ciss
10
Coss
1 Crss
0.1
0.1 1 10 100
Drain-source Voltage VDS (V)
Drain Current ID (A)
Drain-source Voltage VDS (V)
Capacitance C (pF)
**----- End of picture text -----**
**==> picture [220 x 412] intentionally omitted <==**
**----- Start of picture text -----**
ID - VGS
0.1
0.08
Ta= 85 ℃
0.06
25 ℃
0.04
0.02
-40 ℃
0
0 0.5 1 1.5 2 2.5 3
Gate-source voltage VGS (V)
RDS(on) - ID
100
2.5 V
10
VGS = 4.0 V
1
1 10 100
Drain Current ID (mA)
Drain current ID (A)
)
RDS(on) (
Drain-source On-state Resistance
**----- End of picture text -----**
Page 3 of 5
Established : 2010-06-07 Revised : 2013-07-08
Doc No. TT4-EA-12624 Revision. 3
Product Standards
## MOS FET FK3506010L
**==> picture [474 x 620] intentionally omitted <==**
**----- Start of picture text -----**
Vth - Ta RDS(on) - Ta
2.5 12
10
2
VGS = 2.5 V
8
1.5
6
1 4.0 V
4
0.5
2
0 0
-50 0 50 100 150 -50 0 50 100 150
Temperature (℃) Temperature (℃)
PD - Ta
0.2
0.15
0.1
0.05
0
0 50 100 150
Temperature Ta (C)
Rth - tsw Safe Operating Area
1000 10
1 IDp = 0.2 A
0.1
1 ms
100 10 ms
0.01 10 0 ms
Operation in this area
is limited by RDS(on) 1 s
Ta = 25 C, DC
0.001
Glass epoxy board (25.4 25.4 t0.8mm)
coated with copper foil,
which has more than 300mm [2] .
0.0001
10
0.01 0.1 1 10 100
0.1 1 10 100 1000
Pulse Width tsw (s) Drain-source Voltage VDS (V)
RDS(on) (mΩ)
Drain-source On-resistance
Gate-source Threshold Voltage (V)
Total Power Dissipation PD (W)
C/W)
Drain Current ID (A)
Thermal resistance Rth (
**----- End of picture text -----**
Page 4 of 5
Established : 2010-06-07 Revised : 2013-07-08
Doc No. TT4-EA-12624 Revision. 3
Product Standards
## MOS FET FK3506010L
## SMini3-F2-B
**==> picture [364 x 607] intentionally omitted <==**
**----- Start of picture text -----**
Unit : mm
2.0±0.2 +0.05
+0.05 0.13-0.02
0.30-0.02
3
1 2
(0.65) (0.65)
1.3±0.1
(5°)
0.9
1.3
0.1
±0.10 ±
1.25 2.1
(5°)
±0.050
0.425
)
0.1 0.49)
± (
0.89
( 0.9
0 to 0.1
0.8
1.9
**----- End of picture text -----**
- Land Pattern (Reference) (Unit : mm)
Page 5 of 5
Established : 2010-06-07 Revised : 2013-07-08
## Request for your special attention and precautions in using the technical information and semiconductors described in this book
- (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.
- (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book.
- (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications:
- Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
- It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application.
- (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
- (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment.
- Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
- (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
- (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202
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---
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