# Bipolar (BJT) Single Transistor, PNP, 120 V, 50 mA, 300 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2825094/)

**URL**: https://novapart.co/products/FJV992FMTF/bipolar-bjt-single-transistor-pnp-120-v-50-ma-300
**SKU**: FJV992FMTF
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0410
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-120V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:-50mA; DC Current Gain hFE:300h

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 50MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 300hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 50mA |
| Collector Emitter Voltage Max | 120V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2825094/)

## **Is Now Part of** 

## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **FJV992** 

## **Audio Frequency Low Noise Amplifier** 

**==> picture [98 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
• Complement to FJV1845<br>**----- End of picture text -----**<br>


**==> picture [111 x 70] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>é<br>1 SOT-23<br>1. Base  2. Emitter  3. Collector<br>**----- End of picture text -----**<br>


## **PNP Epitaxial Silicon Transistor** 

**Absolute Maximum Ratings** Ta=25°C unless otherwise noted 

|**Absolute Maximum Ratings**Ta=25°C unless otherwise noteda=25°C unless otherwise noted=25°C unless otherwise noted°C unless otherwise notedC unless otherwise noted||
|---|---|
|**Parameter**|**Ratings**|
|Collector-Base Voltage|-120|
|Collector-Emitter Voltage|-120|
|Emitter-Base Voltage|-5|
|Collector Current|-50|
|Collector Power Dissipation|300|
|Junction Temperature|150|
|Storage Temperature|-55 ~ 150|



**Electrical Characteristics** Ta=25°C unless otherwise noted 

|**Electrical Characteristics**Ta=25°C unless otherwise noteda=25°C unless otherwise noted=25°C unless otherwise noted°C unless otherwise notedC unless otherwise noted|Ta=25°C unless otherwise noteda=25°C unless otherwise noted=25°C unless otherwise noted°C unless otherwise notedC unless otherwise noted|||
|---|---|---|---|
|**Parameter**|**Test Condition**|**Min.**|**Max.**|
|Collector-Base Breakdown Voltage|IC = -100µA, IE= 0|-120||
|Collector-Emitter Breakdown Voltage|IC = -1mA, IB=0|-120||
|Emitter-Emitter Breakdown Voltage|IE= -10µA, IC=0|-5||
|Emitter-Base Cutoff Current|VEB= -6V, IC=0||-30|
|DC Current Gain|VCE= -6V, IC= -0.1mA<br>VCE= -6V, IC= -1mA|150<br>200|800|
|Collector-Emitter Saturation Voltage|IC = -10mA, IB= -1mA||-300|
|Base-Emitter On Voltage|VCE= -6V, IC= -1mA|-0.55|-0.65|
|Current Gain Bandwidth Product|VCE= -6V, IC= -1mA|50||
|Output Capacitance|VCB= -30V, IE=0, f=1MHz||3|
|Noise Voltage|VCE= -5.0V, IC= -1.0mA,<br>RG=100KW, GV= 80dB,<br>f = 10Hz to 1.0KHz||40|



## **hFE2 Classification** 

|**hFE2 ClassificationFE2 Classification Classification**||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Classification||P||||||||||F|E|
|hFE2|200 ~ 400|200 ~ 400|200 ~ 400|||||||||300 ~ 600|400 ~ 800|
||||Marking|||||||||||
|||||||||||||||
|||||||||||||||
||||||**2JP**|||||||||
|||||||||||||||
|||||||||||||||
||||||||||||hFEClassification|||



©2004 Fairchild Semiconductor Corporation 

Rev. C, August 2004 

## **Typical Characteristics** 

**==> picture [428 x 573] intentionally omitted <==**

**----- Start of picture text -----**<br>
-1.0 -10<br>IB = -1.2µA IB = -1.2µA IB = -24µA IB = -20µA<br>-0.8 IB = -1.0µA -8<br>IB = -16µA<br>IB = -0.8µA<br>-0.6 -6 IB = -12µA<br>IB = -0.6µA<br>-0.4 -4 IB = -8µA<br>IB = -0.4µA<br>IB = -4µA<br>-0.2 IB = -0.2µA -2<br>0.0 IB = 0 0 IB = 0<br>0 -20 -40 -60 -80 -100 0 -1 -2 -3 -4 -5<br>VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE<br>Figure 1. Static Characteristic Figure 2. Static Characteristic<br>1000 -1<br>VCE=-6V IC=10IB<br>Ta=1250C<br>Ta=250C<br>Ta=-250C<br>100 -0.1 Ta=250C Ta=1250C<br>Ta=-250C<br>10 -0.01<br>-1E-3 -0.01 -0.1 -1E-3 -0.01 -0.1<br>IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT<br>Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage<br>-0.12<br>IC=10IB VCE=-6V<br>-0.10<br>1<br>Ta=-250C<br>-0.08<br>Ta=250C<br>Ta=1250C -0.06 Ta=1250C Ta=250C Ta=-250C<br>-0.04<br>-0.02<br>0.1 -0.00<br>1E-3 0.01 0.1 -0.2 -0.4 -0.6 -0.8 -1.0<br>IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE<br>[mA], COLLECTOR CURRENTIC [mA], COLLECTOR CURRENTIC<br>, DC CURRENT GAIN<br>FE<br>h<br>(SAT)[V], SATURATION VOLTAGE<br>CE<br>V<br>(SAT)[V], SATURATION VOLTAGE [A], COLLECTOR CURRENTIC<br>BE<br>V<br>**----- End of picture text -----**<br>


**Figure 5. Base-Emitter Saturation Voltage** 

**Figure 6. Base-Emitter Voltage** 

©2004 Fairchild Semiconductor Corporation 

Rev. C, August 2004 

## **Typical Characteristics** (Continued) 

**==> picture [211 x 378] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>IE=0<br>f = 1MHz<br>1<br>0.1<br>-1 -10 -100 -1000<br>VCB [V], COLLECTOR-BASE VOLTAGE<br>Figure 7. Collector Output Capacitance<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 25 50 75 100 125 150 175<br>Ta[oC], AMBIENT TEMPERATURE<br> [pF], CAPACITANCE<br>ob<br>C<br>[mW], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br>


**==> picture [205 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>VCE = -6V<br>100<br>10<br>1<br>0.1 1 10 100<br>IE[mA], COLLECTOR CURRENT<br>[MHz], CURRENT GAIN-BANDWIDTH PRODUCTfT<br>**----- End of picture text -----**<br>


**Figure 8. Current Gain Bandwidth Product** 

**Figure 9. Power Derating** 

©2004 Fairchild Semiconductor Corporation 

Rev. C, August 2004 

## **Package Dimensions** 

**==> picture [289 x 413] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT-23<br>0.40 ±0.03<br>0.03~0.10<br>0.38 REF<br>0.40 ±0.03 +0.05<br>0.12 –0.023<br>0.96~1.14<br>2.90 ±0.10<br>0.95 ±0.03 0.95 ±0.03<br>1.90 ±0.03 0.508REF<br>0.20 MIN<br>0.45~0.60<br>1.30 0.10± 2.40 0.10±<br>0.97REF<br>**----- End of picture text -----**<br>


Dimensions in Millimeters 

©2004 Fairchild Semiconductor Corporation 

Rev. C, August 2004 

## **TRADEMARKS** 

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

|ACEx™|FAST®|ISOPLANAR™|Power247™|SuperFET™|
|---|---|---|---|---|
|ActiveArray™<br>Bottomless™|FASTr™<br>FPS™|LittleFET™<br>MICROCOUPLER™|PowerSaver™<br>PowerTrench®|SuperSOT™-3<br>SuperSOT™-6|
|CoolFET™|FRFET™|MicroFET™|QFET®|SuperSOT™-8|
|_CROSSVOLT_™|GlobalOptoisolator™|MicroPak™|QS™|SyncFET™|
|DOME™|GTO™|MICROWIRE™|QT Optoelectronics™|TinyLogic®|
|EcoSPARK™|HiSeC™|MSX™|Quiet Series™|TINYOPTO™|
|E2CMOS™|I2C™|MSXPro™|RapidConfigure™|TruTranslation™|
|EnSigna™<br>FACT™|_i-Lo_™<br>ImpliedDisconnect™|OCX™<br>OCXPro™|RapidConnect™<br>µSerDes™|UHC™<br>UltraFET®|
|FACT Quiet Series™||OPTOLOGIC®|SILENT SWITCHER®|VCX™|
|Across the board. Around the world.™||OPTOPLANAR™|SMART START™||
|The Power Franchise®||PACMAN™|SPM™||
|Programmable Active|Droop™|POP™|Stealth™||



## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used herein: 

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative or In<br>Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.|
|Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.|
|No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.|
|Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.|



©2004 Fairchild Semiconductor Corporation 

Rev. I11 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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