# Bipolar (BJT) Single Transistor, NPN, 400 V, 300 mA, 2 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2929778/)

**URL**: https://novapart.co/products/FJT44TF/bipolar-bjt-single-transistor-npn-400-v-300-ma-2-w
**SKU**: FJT44TF
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1590
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:2W; DC Collector Current:300mA; DC Current Gain hFE:40hFE; Transisto

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | FJT44 |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 300mA |
| Collector Emitter Voltage Max | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2929778/)

## **Is Now Part of** 

## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

October 2014 

## **FJT44 NPN Epitaxial Silicon Transistor** 

## **Features** 

**==> picture [430 x 77] intentionally omitted <==**

**----- Start of picture text -----**<br>
• High-Voltage Transistor  4<br>3<br>2<br>1 SOT-223<br>1. Base   2,4. Collector   3. Emitter<br>**----- End of picture text -----**<br>


## **Ordering Information** 

**Part Number Marking Package Packing Method, Size** FJT44TF FJT44 SOT-223 4L Tape and Reel, 4000 pcs FJT44KTF FJT44 SOT-223 4L Tape and Reel, 2500 pcs ~~ee ee ee~~ 

## **Absolute Maximum Ratings**[(1),(2)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCBO|Collector-Base Voltage|500|V|
|VCEO|Collector-Emitter Voltage|400|V|
|VEBO|Emitter-Base Voltage|6|V|
|IC|Collector Current|300|mA|
|TJ|Junction Temperature|150|°C|
|TSTG|Storage Temperature Range|-55 to +150|°C|



## **Notes:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. 

© 2002 Fairchild Semiconductor Corporation FJT44 Rev. 1.1.0 

www.fairchildsemi.com 

## **Thermal Characteristics**[(3)] 

Values are at TA = 25°C unless otherwise noted. 

**==> picture [447 x 55] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|Symbol|Parameter|Max.|Unit|
|Power Dissipation, TC = 25°C|2|W|
|PD|Derate Above 25°C|16|mW/|°|C|
|R|θ|JA|Thermal Resistance, Junction-to-Ambient|62.5|°|C/W|

**----- End of picture text -----**<br>


**Note:** 

3. Device is mounted on FR-4 PCB 36 mm × 18 mm × 1.5 mm; mounting pad for the collector lead minimum 6 cm[2] . 

## **Electrical Characteristics**[(4)] 

Values are at TA = 25°C unless otherwise noted. 

**==> picture [457 x 258] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|Symbol|Parameter|Conditions|Min.|Typ.|Max.|Unit|
|BVCBO|Collector-Base Breakdown Voltage|IC = 100|μ|A, IE = 0|500|V|
|BVCEO|Collector-Emitter Breakdown Voltage|IC = 1 mA, IB = 0|400|V|
|BVEBO|Emitter-Base Breakdown Voltage|IE = 100|μ|A, IC = 0|6|V|
|ICBO|Collector-Base Cut-Off Current|VCB = 400 V, IE = 0|100|nA|
|ICES|Collector-Emitter Cut-Off Current|VCE = 400 V, VBE = 0|500|nA|
|IEBO|Emitter-Base Cut-Off Current|VEB = 4 V, IC = 0|100|nA|
|VCE = 10 V, IC = 1 mA|40|
|VCE = 10 V, IC = 10 mA|50|200|
|hFE|DC Current Gain|
|VCE = 10 V, IC = 50 mA|45|
|VCE = 10 V, IC = 100 mA|40|
|IC = 1 mA, IB = 0.1 mA|0.40|
|VCE(sat)|Collector-Emitter Saturation Voltage|IC = 10 mA, IB = 1 mA|0.50|V|
|IC = 50 mA, IB = 5 mA|0.75|
|VBE(sat)|Base-Emitter Saturation Voltage|IC = 10 mA, IB = 1 mA|0.75|V|
|Cobo|Output Capacitance|f = 1.0 MHz VCB = 20 V, IE = 0,|7|pF|
|——a—eaae|
|Note:|

**----- End of picture text -----**<br>


4. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0% 

© 2002 Fairchild Semiconductor Corporation FJT44 Rev. 1.1.0 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

**==> picture [421 x 569] intentionally omitted <==**

**----- Start of picture text -----**<br>
160<br>140 VCE=10V 10 VCC=150V<br>I C /I B =10<br>120 SMC LU T A =25 o C<br>100 PTI CETTE V BE (off)=4V<br>80<br>60 1<br>40<br>20<br>0 tf<br>-20 td<br>-40 0.1<br>1 ieee 10 100 1000 10000 | Ge 1 10 Sta 100<br>IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT<br>Figure 1. DC Current Gain Figure 2. Turn-On Switching Times<br>100<br>VITC A CC/I=25B==10150VoC 1000 Tf=1MHzA=25oC<br>10<br>Sse 100 MG<br>Cib<br>ts<br>1  setaseail 10 C ob Gn<br>tf<br>0.1 1 =sgaee 10 100 E 1 S 0.1 Rice 1 Sag 10 100 2 1000<br>IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE<br>Figure 3. Turn-Off Switching Times Figure 4. Capacitance<br>1.0 0.5<br>TA=25oC I C =1mA I C =10mA I C =50mA TA=25oC<br>0.8 0.4<br>VBE(sat) @IC/IB=10<br>0.6 0.3<br>cf St VBE(on) @V SEE CE=10V at eaae<br>0.4 0.2<br>0.2 V CE (sat)@I C /I B =10 0.1<br>0.0 0.0<br>0.1 1 10 100 1000 10 100 1000 10000 100000<br>IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT<br>Figure 5. On Voltage Figure 6. Collector Saturation Region<br>t[us], TIME<br>, DC CURRENT GAIN<br>FE<br>h<br>t[us], TIME [pF], CAPACITANCE<br>ob<br>[pF],CCib<br>[V], VOLTAGE<br>[V] COLLECTOR EMITTER VOLTAGE<br>CE<br>V<br>**----- End of picture text -----**<br>


© 2002 Fairchild Semiconductor Corporation FJT44 Rev. 1.1.0 

www.fairchildsemi.com 

3 

## **Typical Performance Characteristics** (Continued) 

**==> picture [179 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>VCE=10V<br>f=10MHz<br>T A =25 o C<br>10<br>1<br>0.1<br>0.1 1 10 100 1000<br>IC[mA], COLLECTOR CURRENT<br>Figure 7. High Frequency Current Gain<br>, SMALL SIGNAL CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>


© 2002 Fairchild Semiconductor Corporation FJT44 Rev. 1.1.0 

www.fairchildsemi.com 

4 

**==> picture [474 x 631] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.70<br>B<br>6.20<br>0.10 C B<br>3.10<br>2.90 3.25<br>4<br>1.90<br>A<br>3.70<br>6.10<br>3.30<br>1.90<br>1 3<br>0.84<br>0.60<br>2.30<br>0.95 2.30<br>4.60<br>0.10 C B LAND PATTERN RECOMMENDATION<br>SEE DETAIL A<br>1.80 MAX<br>0.08 C 7.30<br>C 6.70<br>0.10<br>0.00<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>   A)  DRAWING BASED ON JEDEC REGISTRATION<br>        TO-261C, VARIATION AA.<br>   B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>R0.15±0.05<br>10°    C) DIMENSIONS DO NOT INCLUDE BURRS<br>GAGE 5°        OR MOLD FLASH. MOLD FLASH OR BURRS<br>R0.15±0.05        DOES NOT EXCEED 0.10MM.<br>PLANE<br>   D) DIMENSIONING AND TOLERANCING PER<br>        ASME Y14.5M-2009.<br>10° 0.35    E)  LANDPATTERN NAME: SOT230P700X180-4BN<br>0° [ TYP] 0.20    F)  DRAWING FILENAME: MKT-MA04AREV3<br>0.25 10°<br>5° 0.60 MIN<br>SEATING<br>1.70<br>PLANE<br>DETAIL A<br>SCALE: 2:1<br>**----- End of picture text -----**<br>


ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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