# Bipolar (BJT) Single Transistor, NPN, 400 V, 8 A, 40 W, TO-220F, Through Hole

![Product image](https://novapart.co/image/farnell:3368627/)

**URL**: https://novapart.co/products/FJPF13007H2TU/bipolar-bjt-single-transistor-npn-400-v-8-a-40-w
**SKU**: FJPF13007H2TU
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.7710
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (27-Jun-2024) |
| No. Of Pins | 3Pins |
| Product Range | FJPF13007 |
| Qualification | - |
| Power Dissipation | 40W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 4MHz |
| Transistor Case Style | TO-220F |
| Dc Current Gain Hfe Min | 26hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 8A |
| Collector Emitter Voltage Max | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3368627/)

**DATA SHEET www.onsemi.com** ~~a~~ 

1 

## High Voltage Fast-Switching NPN Power Transistor 

1. Base 2. Collector 3. Emitter 

## FJPF13007 

**TO−220 Fullpack, 3−Lead CASE 221AT** 

- High Voltage Capability 

- High Switching Speed 

- Suitable for Electronic Ballast and Switching Mode Power Supply 

- This is a Pb−Free Device 

## **MARKING DIAGRAM** 

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**----- Start of picture text -----**<br>
J13007<br>−x<br>AYWWZZ<br>**----- End of picture text -----**<br>


## **MAXIMUM RATINGS** (TC = 25C unless otherwise noted) 

|**MAXIMUM RATINGS**|**MAXIMUM RATINGS**(TC = 25C unless otherwise noted)C = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TC = 25C unless otherwise noted)C = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VCBO|Collector−Base Voltage|700|V|
|VCEO|Collector−Emitter Voltage|400|V|
|VEBO|Emitter−Base Voltage|9|V|
|IC|Collector Current (DC)|8|A|
|ICP|Collector Current (Pulse)|16|A|
|IB|Base Current|4|A|
|PC|Collector Dissipation (TC= 25C)|40|W|
|TJ|Junction Temperature|150|C|
|TSTG|Storage Temperature|−65~150|C|



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J13007−= Specific Device Code<br>x = hFE Grade<br>A = Site Code<br>Y = Year<br>WW = Work Week<br>ZZ = Assembly Lot Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**<br>**Package**|**Package**|**Shipping**|
|---|---|---|
|FJPF13007H2TU<br>Fullpack|TO−220<br>Fullpack|1000 Units / Tube|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**hFE CLASSIFICATION Classification H1 H2** hFE1 15~28 26~39 ~~NS~~ **ELECTRICAL CHARACTERISTICS** (TC = 25C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**(TC = 25C unless otherwise noted)C = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TC = 25C unless otherwise noted)C = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Conditions**<br>~~a~~|**Min**<br>~~a~~|**Typ**<br>~~a~~|**Max**<br>~~a~~|**Unit**<br>~~a~~|
|BVCEO<br>~~a~~|Collector−Emitter Breakdown Voltage<br>~~a~~|IC= 10 mA, IB= 0<br>~~a~~|400<br>~~a~~|−<br>~~a~~|−<br>~~a~~|V<br>~~a~~|
|IEBO<br>~~a~~<br>~~a~~|Emitter Cut−off Current<br>~~a~~<br>~~a~~<br>~~a~~|VEB= 9 V, IC= 0<br>~~a~~<br>~~ee~~|−<br>~~a~~<br>~~ee~~|−<br>~~a~~<br>~~ee ee~~|1<br>~~a~~<br>~~ee~~|A<br>~~a~~<br>~~ee~~|
|hFE1<br>hFE2<br>~~a~~|DC Current Gain<br>~~a~~|VCE= 5 V, IC= 2 A<br>VCE= 5 V, IC= 5 A<br>~~ee~~|8<br>5<br>~~ee~~|−<br>−<br>~~ee ee~~|60<br>30<br>~~ee~~|~~ee~~|
|VCE(sat)<br>~~a ~~<br>~~es~~|Collector−Emitter Saturation Voltage<br> ~~a~~<br>~~es~~|IC= 2 A, IB= 0.4 A<br>IC= 5 A, IB= 1 A<br>IC= 8 A, IB= 2 A<br>~~ee~~<br>~~es~~|−<br>−<br>−<br>~~ee~~<br>~~es~~|−<br>−<br>−<br>~~ee ee~~<br>~~es~~|1.0<br>2.0<br>3.0<br>~~ee~~<br>~~es~~|V<br>V<br>V<br>~~ee~~<br>~~es~~|
|VBE(sat)<br>~~a ~~<br>~~Se~~|Base−Emitter Saturation Voltage<br> ~~a~~<br>~~Se~~|IC= 2 A, IB= 0.4 A<br>IC= 5 A, IB= 1 A<br>~~ee~~|−<br>−<br>~~ee~~|−<br>−<br>~~ee ee~~|1.2<br>1.6<br>~~ee~~<br>~~ee~~|V<br>V<br>~~ee~~|
|fT<br>~~ee~~<br>~~Se~~|Current Gain Bandwidth Product<br>~~ee~~<br>~~Se~~|VCE= 10 V, IC= 0.5 A<br>~~ee~~|4<br>~~ee~~|−<br>~~ee~~|−<br>~~ee~~<br>~~ee~~|MHz<br>~~ee~~|
|Cob<br>~~ee~~<br>~~Se~~|Output Capacitance<br>~~ee~~<br>~~Se~~|VCB= 10 V, f = 0.1 MHz<br>~~ee~~|−<br>~~ee~~|110<br>~~ee~~|−<br>~~ee~~<br>~~ee~~|pF<br>~~ee~~|
|tON<br>~~Se~~<br>~~**a**~~|Turn On Time<br>~~Se~~|VCC= 125 V, IC= 5 A, IB1= −IB2= 1 A,<br>RL= 25<br>~~ee~~|−<br>~~ee~~|−<br>~~ee~~|1.6<br>~~ee~~<br>~~ee~~|s<br>~~ee~~|
|tSTG<br>~~**a**~~|Storage Time||−<br>~~ee~~<br>~~a ~~|−<br>~~ee~~<br> ~~a~~|3.0<br>~~ee~~|s<br>~~ee~~|
|tF<br>~~**a**~~|Fall Time||−<br>~~ee~~<br>~~a~~|−<br>~~ee~~|0.7<br>~~ee~~|s<br>~~ee~~|



*Pulse Test: PW  300 s, Duty Cycle  2% 

Publication Order Number: 

**1** 

 Semiconductor Components Industries, LLC, 2005 **November, 2025 − Rev. 4** 

**FJPF13007/D** 

**FJPF13007** 

## **TYPICAL CHARACTERISTICS** 

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100 10<br>VCE = 5 V IC = 3 IB<br>VBE(sat)<br>1<br>10<br>0.1 VCE(sat)<br>1 0.01<br>0.1 1 10 0.1 1 10 100<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 1. DC Current Gain Figure 2. Saturation Voltage<br>1000 1000<br>100 tR<br>100<br>tD, VBE(off) = 5 V<br>10<br>V CC  = 125 V<br>IC = 5 IB<br>1 10<br>0.1 1 10 100 1000 0.1 1 10<br>VCB, COLLECTOR−BASE VOLTAGE (V) IC, COLLECTOR CURRENT (A)<br>Figure 3. Collector Output Capacitance Figure 4. Turn On Time<br>10000 100<br>VCC = 125 V<br>IC = 5 IB<br>tSTG 10 10  � s<br>1000 100  � s<br>1 ms<br>1<br>DC<br>100 tF<br>0.1<br>10 0.01<br>0.1 1 10 1 10 100 1000<br>IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>(sat), SATURATION<br>CE<br>VOLTAGE (V)<br>, DC CURRENT GAIN<br>FE<br>h (sat), V<br>BE<br>V<br>, CAPACITANCE (pF)ob , TURN ON TIME (ns), tD<br>C tR<br>, TURN OFF TIME (ns)<br>F<br>, t<br>tSTG , COLLECTOR CURRENT (A)IC<br>**----- End of picture text -----**<br>


**Figure 5. Turn Off Time** 

**Figure 6. Forward Biased Safe Operating Area** 

**www.onsemi.com** 

**2** 

**FJPF13007** 

## **TYPICAL CHARACTERISTICS** (continued) 

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100<br>Vcc = 50 V,<br>IB1 = 1 A, IB2 = −1 A<br>L = 1 mH<br>10<br>1<br>0.1<br>0.01<br>10 100 1000 10000<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 7. Reverse Biased Safe Operating Area** 

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60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150 175<br>TC, CASE TEMPERATURE (C)<br>, POWER DISSIPATION) (W)<br>C<br>P<br>**----- End of picture text -----**<br>


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Figure 8. Power Derating<br>**----- End of picture text -----**<br>


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**www.onsemi.com** 

**3** 

**FJPF13007** 

## **REVISION HISTORY** 

|**Revision**|**Description of Changes**|**Date**|
|---|---|---|
|4|FJPF13007H2TU OPN Marked as Discontinued.|11/11/2025|



This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. 

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**www.onsemi.com** 

**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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TO−220 Fullpack, 3−Lead / TO−220F−3SG<br>CASE 221AT<br>ISSUE B<br>DATE 19 JAN 2021<br>Scale 1:1<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON67439E Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 FULLPACK, 3−LEAD / TO−220F−3SG PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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www.onsemi.com 

© Semiconductor Components Industries, LLC, 2012 

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---

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