# Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A, 100 W, TO-220, Through Hole ![Product image](https://novapart.co/image/farnell:1700664/) **URL**: https://novapart.co/products/FJP13009H2TU/bipolar-bjt-single-transistor-npn-400-v-12-a-100-w **SKU**: FJP13009H2TU **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.7550 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:4MHz; Power Dissipation Pd:100W; DC Collector Current:12A; DC Current Gain hFE:8hFE; Transistor Cas ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 100W | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transition Frequency | 4MHz | | Transistor Case Style | TO-220 | | Dc Current Gain Hfe Min | 8hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 12A | | Collector Emitter Voltage Max | 400V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1700664/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. September 2014 ## **FJP13009 High-Voltage Fast-Switching NPN Power Transistor** ## **Features** - High-Voltage Capability - High Switching Speed ## **Applications** ## **Description** The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power dissipation. - Electronic Ballast - Switching Regulator - Motor Control - Switched Mode Power Supply **==> picture [112 x 27] intentionally omitted <==** **----- Start of picture text -----**
1 TO-220
1.Base 2.Collector 3.Emitter
**----- End of picture text -----**
## **Ordering Information** |**Part Number**(1)|**Top Mark**|**Package**|**Packing Method**| |---|---|---|---| |FJP13009TU|J13009|TO-220 3L|Rail| |FJP13009H2TU|J13009-2|TO-220 3L|Rail| ## **Notes:** 1. The affix “-H2” means the hFE classification. The suffix “-TU” means the tube packing method. © 2003 Fairchild Semiconductor Corporation FJP13009 Rev. 1.2.1 www.fairchildsemi.com ## **Absolute Maximum Ratings**[(2)] Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VCBO|Collector-Base Voltage|700|V| |VCEO|Collector-Emitter Voltage|400|V| |VEBO|Emitter-Base Voltage|9|V| |IC|Collector Current (DC)|12|A| |ICP|Collector Current (Pulse)|24|A| |IB|Base Current|6|A| |PD|Total Device Dissipation (TC= 25°C)|100|W| |TJ|Junction Temperature|150|°C| |TSTG|Storage Temperature Range|-65 to +150|°C| ## **Note:** 2. These ratings are based on a maximum junction temperature of 150 ° C. These are steady-state limits. Fairchild Semiconductor should be consulted on application involving pulsed or low-duty-cycle operations. ## **Electrical Characteristics** Values are at TC = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max**|**Unit**| |---|---|---|---|---|---|---| |VCEO(sus)|Collector-Emitter Sustaining Voltage|IC= 10 mA, IB= 0|400|||V| |IEBO|Emitter Cut-Off Current|VEB= 9 V, IC= 0|||1|mA| |hFE1|DC Current Gain(3)|VCE= 5 V, IC= 5 A|8||40|| |hFE2||VCE= 5 V, IC= 8 A|6||30|| |VCE(sat)|Collector-Emitter Saturation
Voltage(3)|IC= 5 A, IB= 1 A|||1.0|V| |||IC= 8 A, IB= 1.6 A|||1.5|| |||IC= 12 A, IB= 3 A|||3.0|| |VBE(sat)|Base-Emitter Saturation Voltage(3)|IC= 5 A, IB= 1 A|||1.2|V| |||IC= 8 A, IB= 1.6 A|||1.6|| |Cob|Output Capacitance|VCB= 10 V, f = 0.1 MHz||180||pF| |fT|Current Gain Bandwidth Product|VCE= 10 V, IC= 0.5 A|4|||MHz| |tON|Turn-On Time|VCC= 125 V, IC= 8 A,
IB1= - IB2= 1.6 A,
RL= 15.6Ω|||1.1|μs| |tSTG|Storage Time||||3.0|| |tF|Fall Time||||0.7|| ## **Note:** 3. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2% ## **hFE Classification** |**hFE ClassificationFE Classification Classification**||| |---|---|---| |**Classification**|**H1**|**H2**| |hFE1|8 ~ 17|15 ~ 28| © 2003 Fairchild Semiconductor Corporation FJP13009 Rev. 1.2.1 www.fairchildsemi.com 2 ## **Typical Performance Characteristics** **==> picture [419 x 568] intentionally omitted <==** **----- Start of picture text -----**
100 10
V CE = 5V I C = 3 I B
1 VBE(sat)
10
0.1
VCE(sat)
1 EEE 0.01
0.1 1 10 100 0.1 1 10 100
IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
1000 10000
VCC=125V
I C =5I B
100 1000 tR
10 100 tD, VBE(off)=5V
1 a 10
0.1 1 10 100 1000 0.1 1 10 100
VCB[V], COLLECTOR BASE VOLTAGE IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance Figure 4. Turn-On Time
10000 100
VCC=125V
IC=5IB
10
t STG
1000 1
0.1
tF
100 cH 0.01 BN
0.1 1 10 100 1 10 100 1000
IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn-Off Time Figure 6. Forward Bias Safe Operating Area
DC 1ms100 μ s10 μ s
(sat)[V], SATURATION VOLTAGE
, DC CURRENT GAIN CE
FE
h
(sat), V
BE
V
[pF], CAPACITANCEob [ns], TURN ON TIME, ttDR
C
[ns], TURN OFF TIME, tF
tSTG
[A], COLLECTOR CURRENTIC
**----- End of picture text -----**
© 2003 Fairchild Semiconductor Corporation FJP13009 Rev. 1.2.1 www.fairchildsemi.com 3 ## **Typical Performance Characteristics** (Continued) **==> picture [403 x 167] intentionally omitted <==** **----- Start of picture text -----**
100 120
Vcc=50V,
IL = 1mHB1=1A, IB2 = -1A 100
| | | TT tT
10
80 PINE
1 60
PT INE| Tt
40
Pt TTT
0.1
20 | | IN
P| |NET
0.01 0
10 100 1000 10000 0 | 25 | 50 | 75 Pt] 100 125 WN 150 175
VCE[V], COLLECTOR-EMITTER VOLTAGE TC[oC], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating
[A], COLLECTOR CURRENTIC [W], POWER DISSIPATIONPC
**----- End of picture text -----**
© 2003 Fairchild Semiconductor Corporation FJP13009 Rev. 1.2.1 www.fairchildsemi.com 4 **==> picture [592 x 749] intentionally omitted <==** **----- Start of picture text -----**
SUPPLIER "B" PACKAGE
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3.50
10.67
SUPPLIER "A" PACKAGE 9.65 E
SHAPE
3.40
2.50
16.30
IF PRESENT, SEE NOTE "D" 13.90
E
16.51 9.40
15.42
8.13 E
1 2 3
[2.46] C 2.704.10
14.04
2.13 12.70
2.06
FRONT VIEWS
4.70 1.62 1.62
4.00 1.42 [ H] 2.67 1.10
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"A1" 8.65 1.00
SEE NOTE "F" 7.59 0.55
�� ��
OPTIONAL 6.69 �� ��
6.06
CHAMFER
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14.30
11.50
NOTE "I" BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
3 2 1 D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36 2.85 BACK VIEW
2.10
SIDE VIEW
**----- End of picture text -----**
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