# Bipolar (BJT) Single Transistor, NPN, 400 V, 8 A, 80 W, TO-220, Through Hole ![Product image](https://novapart.co/image/farnell:1505016/) **URL**: https://novapart.co/products/FJP13007TU/bipolar-bjt-single-transistor-npn-400-v-8-a-80-w **SKU**: FJP13007TU **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.2090 **Stock**: 10+ ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:4MHz; Power Dissipation Pd:80W; DC Collector Current:8A; DC Current Gain hFE:8hFE; Transistor Case Style:TO-220; ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 80W | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transition Frequency | 4MHz | | Transistor Case Style | TO-220 | | Dc Current Gain Hfe Min | 8hFE | | Operating Temperature Max | 150Β°C | | Continuous Collector Current | 8A | | Collector Emitter Voltage Max | 400V | ## Datasheet πŸ“„ [Download PDF](https://novapart.co/datasheet/farnell:1505016/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. β€œTypical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including β€œTypicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [64 x 7] intentionally omitted <==** **----- Start of picture text -----**
November 2014
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## **FJP13007 High Voltage Fast-Switching NPN Power Transistor** ## **Features** - High Voltage High Speed Power Switch Application - High Voltage Capability - High Switching Speed - Suitable for Electronic Ballast and Switching Mode Power Supply **==> picture [111 x 27] intentionally omitted <==** **----- Start of picture text -----**
1 TO-220
1.Base 2.Collector 3.Emitter
**----- End of picture text -----**
## **Ordering Information** |**Part Number**|**Top Mark**|**Package**|**Packing Method**| |---|---|---|---| |FJP13007TU|J13007|TO-220 3L (Dual Gauge)|Rail| |FJP13007H1TU|J13007-1|TO-220 3L (Single Gauge)|Rail| |FJP13007H1TU_F080|J13007-1|TO-220 3L (Dual Gauge)|Rail| |FJP13007H2TU|J13007-2|TO-220 3L (Dual Gauge)|Rail| |FJP13007H2TU_F080|J13007-2|TO-220 3L (Dual Gauge)|Rail| ## **Absolute Maximum Ratings** Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25Β°C unless otherwise noted. |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VCBO|Collector-Base Voltage|700|V| |VCEO|Collector-Emitter Voltage|400|V| |VEBO|Emitter-Base Voltage|9|V| |IC|Collector Current (DC)|8|A| |ICP|Collector Current (Pulse)|16|A| |IB|Base Current (DC)|4|A| |PC|Collector Dissipation (TC= 25Β°C)|80|W| |TJ|Junction Temperature|150|Β°C| |TSTG|Storage Temperature Range|-65 to 150|Β°C| Β© 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 www.fairchildsemi.com ## **Electrical Characteristics** Values are at TC = 25Β°C unless otherwise noted. |**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |BVCEO|Collector-Emitter Breakdown Voltage|IC= 10 mA, IB= 0|400|||V| |IEBO|Emitter Cut-Off Current|VEB= 9 V, IC= 0|||1|mA| |hFE1|DC Current Gain(1)|VCE= 5 V, IC= 2 A|8||60|| |hFE2|DC Current Gain(1)|VCE= 5 V, IC= 5 A|5||30|| |VCE(sat)|Collector-Emitter Saturation Voltage|IC= 2 A, IB= 0.4 A|||1.0|V| |||IC= 5 A, IB= 1 A|||2.0|| |||IC= 8 A, IB= 2 A|||3.0|| |VBE(sat)
~~β€”β€”β€”β€”E~~|Collector-Base Saturation Voltage
~~β€”β€”β€”β€”E~~|IC= 2 A, IB= 0.4 A
~~β€”β€”β€”β€”E~~|~~β€”β€”β€”β€”E~~|~~β€”β€”β€”β€”E~~|1.2
~~β€”β€”β€”β€”E~~|V
~~β€”β€”β€”β€”E~~| |||IC= 5 A, IB= 1 A
~~β€”β€”β€”β€”E~~|~~β€”β€”β€”β€”E~~|~~β€”β€”β€”β€”E~~|1.6
~~β€”β€”β€”β€”E~~|| |fT
~~β€”β€”β€”β€”E~~|Current Gain Bandwidth Product
~~β€”β€”β€”β€”E~~|VCE= 10 V, IC= 0.5 A
~~β€”β€”β€”β€”E~~|4
~~β€”β€”β€”β€”E~~|~~β€”β€”β€”β€”E~~|~~β€”β€”β€”β€”E~~|MHz
~~β€”β€”β€”β€”E~~| |Cob|Output Capacitance|VCB= 10 V, f = 0.1 MHz
~~i~~||110||pF| |tON
~~β€”β€”β€”β€”β€”β€”β€”~~|Turn-On Time
~~β€”β€”β€”β€”β€”β€”β€”~~|VCC= 125 V, IC= 5 A,
IB1= -IB2= 1 A,
RL= 25Ξ©
~~β€”β€”β€”β€”β€”β€”β€”~~
~~i~~|~~β€”β€”β€”β€”β€”β€”β€”~~|~~β€”β€”β€”β€”β€”β€”β€”~~|1.6
~~β€”β€”β€”β€”β€”β€”β€”~~|ΞΌs
~~β€”β€”β€”β€”β€”β€”β€”~~| |tSTG
~~β€”β€”β€”β€”β€”β€”β€”~~|Storage Time
~~β€”β€”β€”β€”β€”β€”β€”~~||~~β€”β€”β€”β€”β€”β€”β€”~~|~~β€”β€”β€”β€”β€”β€”β€”~~|3.0
~~β€”β€”β€”β€”β€”β€”β€”~~|ΞΌs
~~β€”β€”β€”β€”β€”β€”β€”~~| |tF
~~β€”β€”β€”β€”β€”β€”β€”~~|Fall Time
~~β€”β€”β€”β€”β€”β€”β€”~~||~~β€”β€”β€”β€”β€”β€”β€”~~|~~β€”β€”β€”β€”β€”β€”β€”~~|0.7
~~β€”β€”β€”β€”β€”β€”β€”~~|ΞΌs
~~β€”β€”β€”β€”β€”β€”β€”~~| |**hFE Classification**
**Classification**
hFE1
~~β€”β€”~~|**H1**
15 ~ 28|**H2**
26 ~ 39| |---|---|---| Β© 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 www.fairchildsemi.com 2 **==> picture [480 x 620] intentionally omitted <==** **----- Start of picture text -----**
Typical Performance Characteristics
100 10
V CE = 5V I C = 3 I B
1
VBE(sat)
10
0.1 V CE (sat)
1 Ez 0.010.1 1 10 100
0.1 1 10
IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain Figure 2. Saturation Voltage
1000 1000
100 t R
100
10 t D , V BE (off)=5V
V CC =125V
IC=5IB
1 ra 10
0.1 1 10 100 1000 0.1 1 10
VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance Figure 4. Turn-On Time
10000 100
VCC=125V
IC=5IB
tSTG 10 ΞΌ s
10
1000 DC 1ms 100 ΞΌ s
1
100
tF
0.1
10 3 0.01 5
0.1 1 10 1 10 100 1000
IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn-Off Time Figure 6. Forward Biased Safe Operating Area
(sat)[V], SATURATION VOLTAGE
, DC CURRENT GAIN CE
FE
h
(sat), V
BE
V
[ns], TURN ON TIME, ttDR FJP13007 β€” High Voltage Fast-Switching NPN Power Transistor
[pF], OUTPUT CAPACITANCE
ob
C
[ns], TURN OFF TIME, tF
tSTG
[A], COLLECTOR CURRENTIC
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## **Typical Performance Characteristics** Β© 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 www.fairchildsemi.com 3 ## **Typical Performance Characteristics** (Continued) **==> picture [418 x 174] intentionally omitted <==** **----- Start of picture text -----**
100 100
Vcc=50V,
IB1=1A, IB2 = -1A 90
L = 1mH 80
10
Sei seni seni 70 β€”
60
1 50
=a 40 HASSE E
30
0.1 = Soe
20
10
0.01 =e 0 aseee ee
10 100 1000 10000 0 25 50 75 100 125 150 175
VCE[V], COLLECTOR-EMITTER VOLTAGE TC[oC], CASE TEMPERATURE
Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating
[A], COLLECTOR CURRENTIC [W], POWER DISSIPATIONPC
**----- End of picture text -----**
Β© 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 www.fairchildsemi.com 4 **==> picture [592 x 749] intentionally omitted <==** **----- Start of picture text -----**
SUPPLIER "B" PACKAGE
SHAPE οΏ½οΏ½οΏ½οΏ½οΏ½
3.50
10.67
SUPPLIER "A" PACKAGE 9.65 E
SHAPE
3.40
2.50
16.30
IF PRESENT, SEE NOTE "D" 13.90
E
16.51 9.40
15.42
8.13 E
1 2 3
[2.46] C 2.704.10
14.04
2.13 12.70
2.06
FRONT VIEWS
4.70 1.62 1.62
4.00 1.42 [ H] 2.67 1.10
2.40
"A1" 8.65 1.00
SEE NOTE "F" 7.59 0.55
οΏ½οΏ½ οΏ½οΏ½
OPTIONAL 6.69 οΏ½οΏ½ οΏ½οΏ½
6.06
CHAMFER
E
14.30
11.50
NOTE "I" BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
3 2 1 D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36 2.85 BACK VIEW
2.10
SIDE VIEW
**----- End of picture text -----**
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