# Bipolar (BJT) Single Transistor, NPN, 800 V, 20 A, 200 W, TO-264, Through Hole

![Product image](https://novapart.co/image/farnell:2825089/)

**URL**: https://novapart.co/products/FJL6920TU/bipolar-bjt-single-transistor-npn-800-v-20-a-200-w
**SKU**: FJL6920TU
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €3.1100
**Stock**: 100+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:800V; Transition Frequency ft:-; Power Dissipation Pd:200W; DC Collector Current:20A; DC Current Gain hFE:5.5hFE; Transist

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | TO-264 |
| Dc Current Gain Hfe Min | 5.5hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2825089/)

## **Is Now Part of** 

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **FJL6920** 

## **High Voltage Color Display  Horizontal Deflection Output** 

- High Collector-Base Breakdown Voltage : BVCBO = 1700V 

- Low Saturation Voltage : VCE(sat) = 3V (Max.) 

- For Color Monitor 

**==> picture [109 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 TO-264<br>**----- End of picture text -----**<br>


- 1.Base   2.Collector   3.Emitter 

## **NPN Triple Diffused Planar Silicon Transistor** 

## **Absolute Maximum Ratings** TC=25°C unless otherwise noted 

|**Absolute Maximum Ratings**TC=25°C unless otherwise notedC=25°C unless otherwise noted=25°C unless otherwise noted°C unless otherwise notedC unless otherwise noted||
|---|---|
|**Parameter**|**Rating**|
|Collector-Base Voltage|1700|
|Collector-Emitter Voltage|800|
|Emitter-Base Voltage|6|
|Collector Current (DC)|20|
|Collector Current (Pulse)|30|
|Collector Dissipation|200|
|Junction Temperature|150|
|Storage Temperature|-55 ~ 150|



* Pulse Test: PW=300µs, duty Cycle=2% Pulsed 

**Electrical Characteristics** TC=25°C unless otherwise noted 

|**Electrical Characteristics**TC=25°CC=25°C=25°C°CC unless otherwise noted|unless otherwise noted|unless otherwise noted||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>**Parameter**|**Test Conditions**||**Min.**||**Typ.**|**Max.**|**Units**|
|ICES<br>Collector Cut-off Current|VCB=1400V, RBE=0|||||1|mA|
|ICBO<br>Collector Cut-off Current|VCB=800V, IE=0|||||10|µA|
|IEBO<br>Emitter Cut-off Current|VEB=4V, IC=0|||||1|mA|
|BVCBO<br>Collector-Base Breakdown Voltage|IC=500µA, IE=0||1700||||V|
|BVCEO<br>Collector-Emitter Breakdown Voltage|IC=5mA, IB=0||800||||V|
|BVEBO<br>Emitter-Base Breakdown Voltage|IE=500µA, IC=0|||6|||V|
|hFE1<br>DC Current Gain|VCE=5V, IC=1A|||8||||
|hFE2|VCE=5V, IC=11A|||5.5||8.5||
|VCE(sat)<br>Collector-Emitter Saturation Voltage|IC=11A, IB=2.75A|||||3|V|
|VBE(sat)<br>Base-Emitter Saturation Voltage<br>IC=11A, IB=2.75A<br>1.5<br>tSTG*<br>Storage Time<br>VCC=200V, IC=10A, RL=20Ω<br>IB1=2.0A, IB2= - 4.0A<br>3<br>tF*<br>Fall Time<br>0.15<br>0.2<br>~~———~~|||||||V<br>µs<br>µs|
|* Pulse Test: PW=20µs, duty Cycle=1% Pulsed||||||||
|**Thermal Characteristics** TC=25°C unless otherwise noted||||||||
|**Symbol**<br>**Parameter**<br>**Typ**<br>**Max**<br>**Units**<br>RθjC<br>Thermal Resistance, Junction to Case<br>0.625<br>°C/W<br>~~SS~~||||||||



©2001 Fairchild Semiconductor Corporation 

Rev. A, May 2001 

## **Typical Characteristics** 

**==> picture [431 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
16 100<br>14 IB=4.0A VCE = 5V<br>12 IB=2.0A Ta = 125oC Ta = 25oC<br>10 IB=1.5A<br>8 IB=1.0A 10 Ta = - 25oC<br>6 IB=0.5A<br>4<br>IB=0.2A<br>2<br>0 1<br>0 2 4 6 8 10 0.1 1 10 100<br>VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT<br>Figure 1. Static Characteristics Figure 2. DC Current Gain<br>10 10<br>IC = 3 IB IC = 5 IB<br>Ta = 125oC Ta = 125oC<br>1 1<br>Ta = 25oC<br>Ta = - 25oC Ta = 25oC<br>0.1 0.1 Ta = - 25oC<br>0.01 0.01<br>0.1 1 10 100 0.1 1 10 100<br>IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT<br>Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage<br>16 10<br>14 VCE = 5V IVCCC = 10A, I = 200V,B1 = 2A<br>12 tSTG<br>1<br>10<br>8<br>6 0.1 tF<br>4<br>2<br>125oC 25oC - 25oC<br>0 0.01<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10<br>VBE [V], BASE-EMITTER VOLTAGE IB2 [A], REVERSE BASE CURRENT<br>Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time<br>, DC CURRENT GAIN<br>FE<br>h<br> [A], COLLECTOR CURRENTIC<br>(SAT) [V], SATURATION VOLTAGE (SAT) [V], SATURATION VOLTAGE<br>CE CE<br>V V<br>s], SWITCHING TIME<br> [ & tµF<br> [A], COLLECTOR CURRENTIC tSTG<br>**----- End of picture text -----**<br>


©2001 Fairchild Semiconductor Corporation 

Rev. A, May 2001 

## **Typical Characteristics** (Continued) 

**==> picture [429 x 579] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>VCC = 200V, VCC = 200V,<br>IC = 10A, IB2 = - 4A 10 IB1 = 2A, IB2 = - 4A<br>10<br>tSTG<br>1 tSTG 1<br>tF<br>0.1 tF<br>0.1<br>0.01<br>1 10 1 10<br>IB1 [A], FORWARD BASE CURRENT IC [A], COLLECTOR CURRENT<br>Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time<br>100 40<br>IC (Pulse) t = 100ms t = 10ms t = 1ms 35 VRCCB2 = 0, I = 30V, L = 200B1 = 15A µH<br>10 IC (DC) 30<br>25<br>1 20<br>15<br>VBE(off) = -6V<br>0.1 10<br>TC = 25oC 5 VBE(off) = -3V<br>Single Pulse<br>0.01 1<br>1 10 100 1000 10000 10 100 1000 10000<br>VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE<br>Figure 9. Forward Bias Safe Operating Area Figure 10. Reverse Bias Safe Operating Area<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 25 50 75 100 125 150 175<br>TC [OC], CASE TEMPERATURE<br>s], SWITCHING TIME s], SWITCHING TIME<br> [ & tµF  [ & tµF<br>tSTG tSTG<br> [A], COLLECTOR CURRENTIC  [A], COLLECTOR CURRENTIC<br> [W], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br>


**Figure 11. Power Derating** 

©2001 Fairchild Semiconductor Corporation 

Rev. A, May 2001 

**==> picture [561 x 400] intentionally omitted <==**

**----- Start of picture text -----**<br>
18.30<br>17.70<br>B 20.2019.80 5.204.80 A 16.60<br>1.00 7.40<br>2.00 12.00<br>6.20 3.50 7.00<br>C R2.00 C<br>5.80 3.10<br>0.254 A B<br>1.20<br>0.80<br>9.10<br>C 0.50 21.62<br>8.90<br>21.02<br>20.20<br>19.80<br>R1.00 C<br>1.70<br>1.30<br>1.50<br>4.05 3.20 2.60<br>[C]<br>2.80 2.40<br>3.10 1.50 1.50<br>[C]<br>2.70 20.50 2.50<br>C [C]<br>2.30 [ 2X] 19.50<br>1.25<br>C<br>0.90<br>0.254 [M] A B<br>5.75 5.75 0.85 [C]<br>5.15 5.15 0.50<br>FRONT VIEW SIDE VIEW BACK VIEW<br>**----- End of picture text -----**<br>


**==> picture [231 x 71] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.70 5.20<br>0.15 3.30 4.80<br>**----- End of picture text -----**<br>


## **BOTTOM VIEW** 

**==> picture [99 x 45] intentionally omitted <==**

NOTES: 

- A. PACKAGE REFERENCE: JEDEC TO264 VARIATION AA. 

- B. ALL DIMENSIONS ARE IN MILLIMETERS. 

- C OUT OF JEDEC STANDARD VALUE. 

- D. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. 

- E. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. 

- F.  THIS PACKAGE IS INTENDED ONLY FOR 

- "FS PKG CODE AR" 

- G. DRAWING FILE NAME: TO264A03REV2 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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