# Bipolar (BJT) Single Transistor, NPN, 400 V, 5 A, 100 W, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3615345/)

**URL**: https://novapart.co/products/FJB5555TM/bipolar-bjt-single-transistor-npn-400-v-5-a-100-w
**SKU**: FJB5555TM
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.5120
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 100W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 5A |
| Collector Emitter Voltage Max | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3615345/)

**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~oe~~ 

## NPN Silicon Transistor 

## FJB5555 

## **Features** 

- Fast Speed Switching 

- Wide Safe Operating Area 

- High Voltage Capability 

- This is a Pb-Free and Halide Free Device 

## **Applications** 

- Electronic Ballast 

**==> picture [192 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
D2PAK−3<br>(TO−263, 3−LEAD)<br>CASE 418AJ<br>1<br>ee<br>C 2 1. Base<br>2. Collector<br>3. Emitter<br>1<br>B<br>E 3<br>**----- End of picture text -----**<br>


- Switched Mode Power Supplies 

**MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C, unless otherwise noted) **Symbol Parameter Value Unit** AWWYZ BVCBO Collector-Base Voltage 1050 V J5555 BVCEO Collector-Emitter Voltage 400 V BVEBO Emitter-Base Voltage 14 V A = Assembly Location IC Collector Current (DC) 5 A WW = Work Week ICP Collector Current (Pulse) 10 A Y = Year IB Base Current (DC) 2 A Z = Lot Traceability J5555 = Specific Device Code IBP Base Current (Pulse) 4 A TJ Junction Temperature 150 ° C TSTG Storage Junction Temperature Range −55 to +150 ° C **ORDERING INFORMATION** ~~—— :~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be **Device Package Shipping**[†] assumed, damage may occur and reliability may be affected. FJB5555TM D2PAK−3 800 / **THERMAL CHARACTERISTICS** (TA = 25 ° C, unless otherwise noted) ~~ee~~ †For information on tape and reel specifications,(TO−263, 3−LEAD) Tape & Reel **Symbol Parameter Value Unit** including part orientation and tape sizes, please PD Total Device Dissipation TA = 25 ° C 1.6 W refer to our Tape and Reel Packaging SpecificationBrochure, ~~;~~ BRD8011/D. 

|**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**(TA = 25A = 25= 25°C, unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA = 25A = 25= 25°C, unless otherwise noted)|C, unless otherwise noted)|C, unless otherwise noted)|
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|PDD<br>~~es~~|Total Device Dissipation<br>|TA = 25A = 25= 25°C|1.6|W|
|||TC= 25°C<br>|100<br>|W|
|R ja<br>~~esrs~~|Thermal Resistance, Junction to Ambient<br>(Note 1)<br>~~rs~~||77.75<br>~~ae~~|°C/W|
|R jc<br>~~esrs~~|Thermal Resistance Junction to Case<br>(Note 2)<br>~~rs~~||1.25<br>~~ae~~|°C/W|



1. Device mounted on FR−4 PCB, board size = 101.5 mm × 114.5 mm. 

2. R jc test fixture under infinite cooling condition. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2008 **December, 2024 − Rev. 3** 

**FJB5555/D** 

**FJB5555** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted)  (Note 3) 

|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**(TC = 25C = 25= 25°C unless otherwise noted)  (Note 3)|C unless otherwise noted)  (Note 3)|||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~Ge~~|**Test Condition**<br>~~Ge~~|**Min**<br>~~Ge~~|**Typ**<br>~~Ge~~|**Max**<br>~~Ge~~|**Unit**<br>~~Ge~~|
|BVCBO<br>~~Ge~~|Collector-Base Breakdown Voltage<br>~~Ge~~|IC= 500 A, IE= 0<br>~~Ge~~|1050<br>~~Ge~~|−<br>~~Ge~~|−<br>~~Ge~~|V<br>~~Ge~~|
|BVCEO<br>~~Ge~~|Collector-Emitter Breakdown Voltage<br>~~Ge~~|IC= 5 mA, IB= 0<br>~~Ge~~|400<br>~~Ge~~|−<br>~~Ge~~|−<br>~~Ge~~|V<br>~~Ge~~|
|BVEBO<br>~~Ge~~<br>~~—_—~~|Emitter-Base Breakdown Voltage<br>~~Ge~~<br>~~—_———E—EE~~|IE= 500 A, IC= 0<br>~~Ge~~<br>~~——E—EE~~|14<br>~~Ge~~<br>~~——E—EE~~|−<br>~~Ge~~<br>~~——E—EE~~|−<br>~~Ge~~<br>~~——E—EE~~|V<br>~~Ge~~<br>~~——E—EE~~|
|hFE<br>~~—_—~~|DC Current Gain<br>~~—_———E—EE~~|VCE= 5 V, IC= 10 mA<br>~~——E—EE~~|10<br>~~——E—EE~~<br>~~ee~~|−<br>~~——E—EE~~|−<br>~~——E—EE~~|~~——E—EE~~|
|||VCE= 3 V, IC= 0.8 A<br>~~——E—EE~~<br>~~ee~~|20<br>~~——E—EE~~<br>~~ee~~<br>~~ee~~<br>~~eee~~|−<br>~~——E—EE~~<br>~~ee~~<br>~~eee~~|40<br>~~——E—EE~~<br>~~ee~~<br>~~eee~~|~~——E—EE~~<br>~~ee~~<br>~~eee~~|
|VCE(sat)<br>~~—_—~~<br>~~et~~<br>~~a~~|Collector-Emitter Saturation Voltage<br>~~—_———E—EE~~<br>~~et~~<br>|IC= 1 A, IB= 0.2 A<br>~~——E—EE~~<br>~~et~~<br>|−<br>~~——E—EE~~<br>~~ee~~<br>~~et~~<br>~~eee~~<br>~~ee~~<br>|0.17<br>~~——E—EE~~<br>~~et~~<br>~~eee~~<br>|0.50<br>~~——E—EE~~<br>~~et~~<br>~~eee~~<br>|V<br>~~——E—EE~~<br>~~et~~<br>~~eee~~<br>|
|||IC= 3.5 A, IB= 1.0 A<br>~~et~~<br>~~ee~~<br>|−<br>~~et~~<br>~~eee~~<br>~~ee~~<br>~~ee~~<br>|−<br>~~et~~<br>~~eee~~<br>~~ee~~<br>|1.5<br>~~et~~<br>~~eee~~<br>~~ee~~<br>|V<br>~~et~~<br>~~eee~~<br>~~ee~~<br>|
|VBE(sat)<br>~~a~~|Base-Emitter Saturation Voltage<br>~~Ge~~|IC= 3.5 A, IB= 1.0 A<br>~~Ge~~|−<br>~~eee~~<br>~~ee~~<br>~~Ge~~|−<br>~~eee~~<br>~~Ge~~|1.2<br>~~eee~~<br>~~Ge~~|V<br>~~eee~~<br>~~Ge~~|
|Cob<br>~~a~~<br>~~po~~|Output Capacitance<br>~~GO~~<br>~~po~~|VCB= 10 V, f = 1 MHz<br>~~GO~~|−<br>~~GO~~<br>~~a~~|45<br>~~GO~~<br>~~ee~~|−<br>~~GO~~<br>~~ee~~|pF<br>~~GO~~|
|tON<br>~~po~~<br>~~re~~|Turn-On Time<br>~~po~~<br>~~ee~~|VCC= 125 V, IC= 0.5 A,<br>IB1= 45 mA, IB2= −0.5 A,<br>RL= 250<br>~~ee~~<br>2|−<br>~~a~~<br>~~a eee~~|−<br>~~ee~~<br>~~eee~~|1.0<br>~~ee~~<br>~~eee~~|s<br>~~eee~~|
|tSTG<br>~~po~~<br>~~re~~<br>~~po~~|Storage Time<br>~~po~~<br>~~ee~~<br>~~po~~||−<br>~~a~~<br>~~a eee~~<br>~~a~~|−<br>~~ee ~~<br>~~eee~~<br>~~ee~~|1.2<br> ~~ee~~<br>~~eee~~<br>~~ee~~|s<br>~~eee~~|
|tF<br>~~re~~<br>~~po~~<br>~~po~~<br>~~po~~|Fall Time<br>~~ee~~<br>~~po~~<br>~~po~~<br>~~po~~||−<br>~~a eee~~<br>~~a~~<br>~~a~~|0.3<br>~~eee~~<br>~~ee~~<br>~~eee~~|−<br>~~eee~~<br>~~ee~~<br>~~eee~~|s<br>~~eee~~<br>~~eee~~|
|tON<br>~~po~~<br>~~po~~<br>~~re~~<br>~~po~~|Turn-On Time<br>~~po~~<br>~~po~~<br>~~re~~<br>~~po~~|VCC= 250 V, IC= 2.5 A,<br>IB1= 0.5 A, IB2= −1.0 A,<br>RL= 100<br>~~re~~|−<br>~~a~~<br>~~a~~<br>~~re~~|−<br>~~ee ~~<br>~~re~~<br>~~eee~~|2.0<br> ~~ee~~<br>~~re~~<br>~~eee~~|s<br>~~re~~<br>~~eee~~|
|tSTG<br>~~po~~<br>~~re~~<br>~~po~~|Storage Time<br>~~po~~<br>~~re~~<br>~~po~~||−<br>~~a~~<br>~~re~~<br>~~a~~|−<br>~~re~~<br>~~eee~~<br>~~ee~~|2.5<br>~~re~~<br>~~eee~~<br>~~ee~~|s<br>~~re~~<br>~~eee~~|
|tF<br>~~re~~<br>~~po~~|Fall Time<br>~~re~~<br>~~po~~||−<br>~~re~~<br>~~a~~|−<br>~~re~~<br>~~eee~~<br>~~ee~~|0.3<br>~~re~~<br>~~eee~~<br>~~ee~~|s<br>~~re~~<br>~~eee~~|
|EAS<br>~~po~~<br>~~CG~~|Avalanche Energy<br>~~po~~<br>~~CG~~|L = 2 mH<br>~~CG~~|6<br>~~a~~<br>~~CG~~|−<br>~~eee~~<br>~~ee ~~<br>~~CG~~|−<br>~~eee~~<br> ~~ee~~<br>~~CG~~|mJ<br>~~eee~~<br>~~CG~~|



3. Pulse test: pulse width ≤ 300 s, duty cycle wu ≤ 2% 

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**FJB5555** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
Ta = 75  ° C Ta = 125  ° C VCE = 5 V 1 IC = 5 IB<br>100<br>ee eetuny | pSa<br>SS PA Ta = 125  ° C<br>Ta = 25  ° C<br>Ta = −25  ° C Ta = 75  ° C<br>CT eH<br>10 TIE Nw Ta = 25  ° C Lf ||<br>NH OX<br>SSaa SNeeee eeNe 0.1 eo LTT S t Ta = −25  ° C lee<br>Pe Ce a<br>1 PLEA | EEL P EETEE<br>0.01 0.1 1 10 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 1. DC Current Gain Figure 2. Saturation Voltage<br>1000<br>IC = 5 IB<br>tSTG<br>1 UTM Ta = −25  ° C Ta = 25  ° C UI)LL = asSESS en Se<br>a—— Ta = 125  ° C Ta = 75  ° C 100 P| | LTTE N<br>ee anh ————<br>il Ht || Popo TINEA<br>LTE NY tF<br>ELTA ee a<br>VCC = 125 V<br>0.1 LUI 10 IB1 = 45 mA, IB2 = 0.5 A<br>0.01 0.1 AIM 1 AI 10 |  GEE 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 3. Saturation Voltage Figure 4. Resistive Load Switching<br>10000 120<br>110<br>100<br>pf} ft tSTG tf 90 PK]<br>1000 80<br>70<br>re 5060 a<br>tF<br>100 eee ll 40 Po NE<br>30<br>20<br>VCC = 250 V 10<br>10 Se IB1 = 0.5 mA, IB2 = 1.0 A eeea e neill 0 eePTTee eeON<br>0.1 1 10 0 25 50 75 100 125 150 175<br>IC, COLLECTOR CURRENT (A) TC, CASE TEMPERATURE ( ° C)<br>, COLLECTOR-EMITTER<br>, DC CURRENT GAIN<br>FE<br>h SATURATION VOLTAGE<br>CE(SAT)<br>V<br>, SWITCHING TIME (ns)<br>F<br> & t<br>(sat), SATURATION VOLTAGE (V)BE tSTG<br>V<br>, SWITCHING TIME (ns)<br>F<br> & t , POWER DISSIPATION (W)<br>C<br>tSTG P<br>**----- End of picture text -----**<br>


**Figure 5. Resistive Load Switching** 

**Figure 6. Power Derating** 

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**FJB5555** 

**TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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**----- Start of picture text -----**<br>
8<br>Pi tt tt pt yet tt V CC  = 50 V<br>7 Sees eee VBE(off) = −5 V<br>Pt tT tT PP LC = 1 mH<br>6 PPP eT prey I C  = 4 Ib<br>Pit PP<br>5 Pit et tT yt RE TT TI<br>Pi ti tttttTttTE Aiy P tePP EP ET<br>4 −5 V<br>pfSREPR fp<br>3 pit eee eNe eeeee<br>Pi tii tt  Peeyt ttPE P P NPAE TT<br>See<br>2<br>Pi ti tt tt tt Pt PP EE TTeee<br>See<br>1 Pi ti tt yt tee Pe eT Te TI<br>peeee<br>0<br>200 300 400 500 600 700 800 900 1000 1100 1200<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 7. Reverse Bias Safe Operating** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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D [2] PAK−3 (TO−263, 3−LEAD)<br>CASE 418AJ<br>ISSUE F<br>**----- End of picture text -----**<br>


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SCALE 1:1<br>**----- End of picture text -----**<br>


DATE 11 MAR 2021 

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XXXXXX = Specific Device Code<br>A = Assembly Location<br>GENERIC MARKING DIAGRAMS* WL = Wafer Lot<br>Y = Year<br>WW = Work Week<br>XX AYWW W = Week Code (SSG)<br>XXXXXXXXX XXXXXXXXG XXXXXXXXG XXXXXX M = Month Code (SSG)<br>AWLYWWG AYWW  AKA XXYMW G = Pb−Free Package<br>AKA = Polarity Indicator<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “  � ”,<br>may or may not be present. Some products<br>IC Standard Rectifier SSG may not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON56370E Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: D [2] PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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© Semiconductor Components Industries, LLC, 2011 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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