# Bipolar (BJT) Single Transistor, PNP, 140 V, 10 A, 100 W, TO-3P, Through Hole

![Product image](https://novapart.co/image/farnell:3368619/)

**URL**: https://novapart.co/products/FJA4210OTU/bipolar-bjt-single-transistor-pnp-140-v-10-a-100-w
**SKU**: FJA4210OTU
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €1.6400
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 100W |
| Dc Current Gain Hfe | 70hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 30MHz |
| Transistor Case Style | TO-3P |
| Dc Current Gain Hfe Min | 70hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 10A |
| Collector Emitter Voltage Max | 140V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3368619/)

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

**==> picture [55 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
October 2008<br>**----- End of picture text -----**<br>


## **FJA4210** 

## **PNP Epitaxial Silicon Transistor** 

- Audio Power Amplifier 

- High Current Capability : IC= -10A 

- High Power Dissipation 

- Wide S.O.A 

- Complement to FJA4310 

**==> picture [87 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 TO-3P<br>**----- End of picture text -----**<br>


**==> picture [110 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.Base   2.Collector   3.Emitter<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings*  Ta = 25°C unless otherwise noted** 

|**Symbol**|**Parameter**|**Ratings**|**Units**|
|---|---|---|---|
|VCBO|Collector-Base Voltage|-200|V|
|VCEO|Collector-Emitter Voltage|-140|V|
|VEBO|Emitter-Base Voltage|-6|V|
|IC|Collector Current (DC)|-10|A|
|IB|Base Current (DC)|-1.5|A|
|PC|Collector Dissipation (TC=25°C)|100|W|
|TJ|Junction Temperature|150|°C|
|TSTG|Storage Temperature|- 55 ~ 150|°C|



* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 

**Electrical Characteristics*** Ta=25°C unless otherwise noted 

|**Electrical Characteristics***|**Electrical Characteristics***Ta=25°Ca=25°C=25°C°CC unless otherwise noted|unless otherwise noted|||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~GO~~|**Parameter**<br>~~GO~~|**Test Condition**<br>~~GO~~|**Min.**<br>~~GO~~|**Typ.**<br>~~GO~~|**Max.**<br>~~GO~~|**Units**<br>~~GO~~|
|BVCBO<br>~~GO~~<br>~~OG~~|Collector-Base Breakdown Voltage<br>~~GO~~<br>~~OG~~|IC=-5mA, IE=0<br>~~GO~~<br>~~OG~~|-200<br>~~GO~~<br>~~OG~~|~~GO~~<br>~~OG~~|~~GO~~<br>~~OG~~|V<br>~~GO~~<br>~~OG~~|
|BVCEO<br>~~OG~~<br>~~OG~~|Collector-Emitter Breakdown Voltage<br>~~OG~~<br>~~OG~~|IC=-50mA, RBE=¥<br>~~OG~~<br>~~OG~~|-140<br>~~OG~~<br>~~OG~~|~~OG~~<br>~~OG~~|~~OG~~<br>~~OG~~|V<br>~~OG~~<br>~~OG~~|
|BVEBO<br>~~OG~~<br>~~eG~~|Emitter-Base Breakdown Voltage<br>~~OG~~<br>~~eG~~|IE=-5mA, IC=0<br>~~OG~~<br>~~eG~~<br>~~GG~~|-6<br>~~OG~~<br>~~eG~~<br>~~GG~~|~~OG~~<br>~~eG~~|~~OG~~<br>~~eG~~|V<br>~~OG~~<br>~~eG~~|
|ICBO<br>~~eG~~<br>~~a~~|Collector Cut-off Current<br>~~eG~~<br>~~a~~|VCB=-200V, IE=0<br>~~eG~~<br>~~a~~<br>~~GG~~<br>~~GG~~|~~eG~~<br>~~a~~<br>~~GG~~<br>~~GG~~|~~eG~~<br>~~a~~|-10<br>~~eG~~<br>~~a~~|mA<br>~~eG~~<br>~~a~~|
|IEBO<br>~~a~~<br>~~a~~|Emitter Cut-off Current<br>~~a~~<br>~~a~~|VEB=-6V, IC=0<br>~~a~~<br>~~GG~~<br>~~a~~<br>~~GG~~<br>~~GG~~|~~a~~<br>~~GG~~<br>~~a~~<br>~~GG~~<br>~~GG~~|~~a~~<br>~~a~~|-10<br>~~a~~<br>~~a~~|mA<br>~~a~~<br>~~a~~|
|hFE<br>~~a~~<br>~~a~~|*DC Current Gain<br>~~a~~<br>~~a~~|VCE=-4V, IC=-3A<br>~~a~~<br>~~GG~~<br>~~a~~<br>~~GG~~<br>~~GG~~|50<br>~~a~~<br>~~GG~~<br>~~a~~<br>~~GG~~<br>~~GG~~|~~a~~<br>~~a~~|180<br>~~a~~<br>~~a~~|~~a~~<br>~~a~~|
|VCE(sat)<br>~~a~~<br>~~a~~|Collector-Emitter Saturation Voltage<br>~~a~~<br>~~a~~|IC=-5A, IB=-0.5A<br>~~a~~<br>~~GG~~<br>~~a~~<br>~~GG~~<br>~~GG~~|~~a~~<br>~~GG~~<br>~~a~~<br>~~GG~~<br>~~GG~~|~~a~~<br>~~a~~|-0.5<br>~~a~~<br>~~a~~|V<br>~~a~~<br>~~a~~|
|Cob<br>~~a~~<br>~~a~~|Output Capacitance<br>~~a~~<br>~~a~~|VCB=-10V, f=1MHz<br>~~a~~<br>~~GG~~<br>~~a~~<br>~~GG~~<br>~~GG~~|~~a~~<br>~~GG~~<br>~~a~~<br>~~GG~~<br>~~GG~~|400<br>~~a~~<br>~~a~~|~~a~~<br>~~a~~|pF<br>~~a~~<br>~~a~~|
|fT<br>~~a~~<br>~~a~~|Current Gain Bandwidth Product<br>~~a~~<br>~~a~~|VCE=-5V, IC=-1A<br>~~a~~<br>~~GG~~<br>~~a~~<br>~~GG~~|~~a~~<br>~~GG~~<br>~~a~~<br>~~GG~~|30<br>~~a~~<br>~~a~~|~~a~~<br>~~a~~|MHz<br>~~a~~<br>~~a~~|



## **hFE Classification** 

© 2008 Fairchild Semiconductor Corporation FJA4210 Rev. C1 

www.fairchildsemi.com 

1 

## **Typical Characteristics** 

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**----- Start of picture text -----**<br>
-10 IB = - 300mA IB = - 250mA 1000<br>-9 IB = - 400mA VCE = - 4 V<br>-8-7 II BB == -- 150mA 200mA Ta = 125  o C Ta = 25  o C<br>-6 I B  = - 100mA<br>-5 100 Ta = - 25 oC<br>-4 I B = - 50mA<br>-3<br>-2 I B  = - 20mA<br>-1<br>-0-0 -1 -2 -3 -4 10-0.1 -1 -10<br>VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT<br>Figure 1. Static Characterstic Figure 2. DC current Gain<br>-3.0 -1<br>I C  = 10 I B<br>-2.5<br>-2.0<br>-1.5 -0.1<br>-1.0 Ta = 125  o C<br>IC= - 10A Ta = 25 oC<br>-0.5 Ta = - 25  o C<br>IC= - 5A<br>-0.0 -0.01<br>-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -0.01 -0.1 -1 -10<br>IB [A], BASE CURRENT IC [A], COLLECTOR CURRENT<br>, DC CURRENT GAIN<br>FE<br>h<br> [A], COLLECTOR CURRENTIC<br>(sat) [V], SATURATION VOLTAGE (sat) [V], SATURATION VOLTAGE<br>CE CE<br>V V<br>**----- End of picture text -----**<br>


**Figure 3. VCE(sat) vs. IB Characteristics** 

**Figure 4. Collector-Emitter Saturation Voltage** 

**==> picture [207 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
-10<br>V CE  = - 4 V<br>-8<br>-6<br>Ta = 25 oC<br>-4<br>-2 Ta = 125  o C<br>Ta = - 25 oC<br>-0<br>-0.0 -0.5 -1.0 -1.5 -2.0<br>VBE [V], Base-Emitter On VOLTAGE<br> [A], COLLECTOR CURRENTIC<br>**----- End of picture text -----**<br>


**Figure 5. Base-Emitter On Voltage** 

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**----- Start of picture text -----**<br>
IC (Pulse) t=10ms<br>-10<br>IC (DC) t=100ms<br>-1<br>T Single PulseC  = 25 o C<br>-0.1<br>-10 -100<br>VCE [V], COLLECTOR-EMITTER VOLTAGE<br> [A], COLLECTOR CURRENTIC<br>**----- End of picture text -----**<br>


**Figure 6. Forward Bias Safe Operating Area** 

© 2008 Fairchild Semiconductor Corporation FJA4210 Rev. C1 

www.fairchildsemi.com 

2 

## **Typical Characteristics** (Continued) 

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**----- Start of picture text -----**<br>
140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175<br>TC[oC], CASE TEMPERATURE<br>[W], COLLECTOR POWER DISSIPATIONPC<br>**----- End of picture text -----**<br>


**Figure 7. Power Derating** 

© 2008 Fairchild Semiconductor Corporation FJA4210 Rev. C1 

www.fairchildsemi.com 

3 

## **Package Dimension (TO-3P)** 

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**----- Start of picture text -----**<br>
5.00<br>4.60<br>15.80 1.65<br>15.40 1.45<br>5.20<br>4.80<br>(R0.50)<br>20.10<br>19.70 18.90<br>18.50<br>3.70<br>3.30<br>(1.85)<br>2.20<br>1.80<br>2.60<br>2.20<br>3.20 20.30<br>2.80 19.70<br>0.55 1.200.80<br>1 3<br>5.45 5.45 0.750.55<br>(R0.50)<br>NOTES:<br>   A) THIS PACKAGE CONFORMS TO EIAJ<br>        SC-65 PACKAGING STANDARD.<br>   B) ALL DIMENSIONS ARE IN MILLIMETERS.<br>   C) DIMENSIONING AND TOLERANCING PER<br>ASME14.5 1973.<br>   D) DIMENSIONS ARE EXCLUSIVE OF BURRS,<br>        MOLD FLASH, AND TIE BAR EXTRUSIONS.<br>    E) DRAWING FILE NAME: TO3P03AREV2.<br>**----- End of picture text -----**<br>


© 2008 Fairchild Semiconductor Corporation FJA4210 Rev. C1 

www.fairchildsemi.com 

4 

## **TRADEMARKS** 

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

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## As used herein: 

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## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative or In Design|This datasheet contains the design specifications for product development.<br>Specifications may change in any manner without notice.|
|Preliminary|First Production|This datasheet contains preliminary data; supplementary data will be pub-<br>lished at a later date. Fairchild Semiconductor reserves the right to make<br>changes at any time without notice to improve design.|
|No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild Semiconductor reserves<br>the right to make changes at any time without notice to improve design.|
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Rev. I31 

- © 2008 Fairchild Semiconductor Corporation FJA4210 Rev. C1 

www.fairchildsemi.com 

5 

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