# IGBT, 30 A, 2.4 V, 100 W, 600 V, ISOPLUS i4-PAC, 5 Pins

![Product image](https://novapart.co/image/farnell:2674739/)

**URL**: https://novapart.co/products/FII30-06D/igbt-30-a-24-v-100-w-600-isoplus-i4-pac-5-pins
**SKU**: FII30-06D
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €5.4800
**Stock**: 10+

## Description

Transistor Polarity:Dual N Channel; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V;

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 5Pins |
| Product Range | - |
| Power Dissipation | 100W |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 30A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2674739/)

**FII 30-06D** 

## **IGBT phaseleg** 

in ISOPLUS i4-PAC™ 

**==> picture [5 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>5<br>4<br>1<br>**----- End of picture text -----**<br>


**I** C25 **= 30 A V** CES **= 600 V V = 1.9 V** CE(sat) typ. 

E72873 

2 

|**VCES**<br>TVJ= 25°C to 150°C<br>600|V|
|---|---|
|**VGES**<br>±20|V|
|**IC25**<br>**IC90**<br>TC= 25°C<br>TC= 90°C<br>30<br>18|A<br>A|
|**ICM**<br>**VCEK**<br>VGE=±15 V; RG= 47Ω; TVJ= 125°C<br>**RBSOA**Clamped inductive load;  L = 100µH<br>40<br>VCES|A|
|**tSC**<br>**(SCSOA)**<br>VCE= VCES; VGE=±15 V; RG= 47Ω<br>TVJ= 125°C; non-repetitive<br>10|µs|
|**Ptot**<br>TC= 25°C<br>100|W|



(TVJ = 25 ° C, unless otherwise specified) 

||**min.**<br>~~ft~~|**typ.**<br>~~ftft~~|**max.**<br>~~ft~~||
|---|---|---|---|---|
|**VCE(sat)**<br>IC= 20 A; VGE= 15 V<br>TVJ=   25°C<br>TVJ= 125°C<br>~~PF~~|~~ft~~<br>~~PF~~<br>~~|~~|1.9<br>2.2<br>~~ftft~~|2.4<br>~~ft~~|V<br>V|
|**VGE(th)**<br>IC= 0.5 mA; VGE= VCE<br>~~PF~~|4.5<br>~~ft~~<br>~~PF~~<br>~~|~~<br>~~ft~~|~~ft ft~~<br>~~ftft~~|6.5<br>~~ft~~<br>~~ft~~|V|
|**ICES**<br>VCE= VCES; VGE= 0 V<br>TVJ=   25°C<br>TVJ= 125°C<br>~~PF~~|~~PF~~<br>~~|~~<br>~~ft~~|0.6<br>~~ftft~~|0.6<br>~~ft~~|mA<br>mA|
|**IGES**<br>VCE= 0 V; VGE=±20 V|~~ft~~|~~ft ft~~|200<br>~~ft~~|nA|
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**<br>**Eon**<br>**Eoff**<br>Inductive load<br>TVJ= 125°C<br>VCE= 300 V; IC= 20 A<br>VGE= ±15 V; RG= 47Ω<br>~~PF~~|~~PF~~<br>~~|~~|50<br>55<br>200<br>30<br>0.75<br>0.6||ns<br>ns<br>ns<br>ns<br>mJ<br>mJ|
|**Cies**<br>VCE= 25 V; VGE= 0 V; f = 1 MHz<br>~~PF~~<br>~~PF~~|~~PF~~<br>~~|~~<br>~~PF~~<br>~~|~~|1.1<br>||nF|
|**QGon**<br>VCE= 300 V; VGE= 15 V; IC= 20 A<br>~~PF~~<br>~~PF~~|~~PF~~<br>~~|~~<br>~~PF~~<br>~~|~~|65<br>||nC|
|**RthJC**<br>**RthJH**<br>with heatsink compound<br>~~PF~~|~~PF~~<br>~~|ff~~|2.5<br>~~ff~~|1.25<br>~~ff~~|K/W<br>K/W|



## **Features** 

- NPT IGBT technology 

- low saturation voltage 

- positive temperature coefficient for easy paralleling 

- fast switching 

- HiPerFRED™ diode 

- optimized fast and soft reverse recovery 

- low operating forward voltage 

- low leakage current 

- ISOPLUS i4-PAC™ package 

- isolated back surface 

- low coupling capacity between pins and heatsink 

- enlarged creepage towards heatsink 

- application friendly pinout 

- low inductive current path 

- high reliability 

- industry standard outline 

- UL registered E 72873 

## **Applications** 

- single phaseleg 

- buck-boost chopper 

- H bridge 

- power supplies 

- induction heating 

- four quadrant DC drives 

- controlled rectifier 

- three phase bridge 

- AC drives 

- controlled rectifier 

IXYS reserves the right to change limits, test conditions and dimensions. 

20110119a 

© 2011 IXYS All rights reserved 

1 - 5 

**FII 30-06D** 

|**Diode**|||||
|---|---|---|---|---|
|**Symbol**<br>**Conditions**|Maximum Ratings||||
|**VRRM**<br>TVJ= 25°C to 150°C|600|||V|
|**IF25**<br>**IF90**<br>TC= 25°C<br>TC= 90°C|30<br>15|||A<br>A|
|**Symbol**<br>**Conditions**|**Characteristic Values**||||
||**min.**|**typ.**|**max.**||
|**VF**<br>IF= 20 A<br>TVJ=   25°C<br>TVJ= 125°C||2.3<br>1.6|2.7|V<br>V|
|**IRM**<br>**trr**<br>IF= 15 A; diF/dt = -400 A/µs;<br>VR= 300 V; VGE= 0 V;<br>TVJ= 125°C||7<br>50||A<br>ns|
|**RthJC**<br>**RthJH**<br>(per diode)<br>with heatsink compound||4.6|2.3|K/W<br>K/W|
||||||
|**Component**|||||
|**Symbol**<br>**Conditions**|**Maximum Ratings**||||
|**TVJ**<br>**Tstg**<br>operating|-55...+150<br>-55...+125|||°C<br>°C|
|**VISOL**<br>IISOL <1 mA; 50/60 Hz; t = 1 s|2500|||V~|
|**FC**<br>Mountingforce with clip|20...120|||Nm|
|**Symbol**<br>**Conditions**|**Characteristic Values**||||
|**CP**<br>coupling capacity between shorted<br>pins and mountingtab in the case|**min.**|**typ.**|**max.**||
|||40||pF|
|**dS, dA**<br>**dS, dA**<br>pin - pin<br>pin - backside metal|1.7<br>5.5|||mm<br>mm|
|**Weight**||6||g|



|**Weight**|**Weight**||||||||||||||6|6|6|6|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||A2<br>Q<br>|||||_4x e_<br>A<br>A1<br>C<br>D1|||||||||
|||||||||||||_4x e_<br>D1|||E1|D2|||
|||||||||A2|||||||||||
|D<br>R||E|||||||||||||||||
||||||||||||||||||||
||||||Q||||||||||||||
||||||||||||||D1||||||
||||||||||||||||||||
||||||||||||||||||||
|L1<br>L|||||||||||||||||||
|||||||||||||||_e_|||||
|**1**||**2**<br>**5**<br>**3 4**|||||||||||||||||
||||||||||||||||||||
||||||_W_||||||||||||||
||||||||||||||||||||
|||||||||_W_|||||||||||



IXYS reserves the right to change limits, test conditions and dimensions. 

© 2011 IXYS All rights reserved 

20110119a 

2 - 5 

**FII 30-06D** 

IXYS reserves the right to change limits, test conditions and dimensions. 

- © 2011 IXYS All rights reserved 

20110119a 

3 - 5 

**FII 30-06D** 

**==> picture [448 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>1<br>D = 0<br>D = 0.005 0.1 IGBT<br>D = 0.01<br>ZthJH[K/W]<br>D = 0.02<br>D = 0.05<br>D = 0.1  0.01<br>D = 0.2<br>D = 0.5<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t (s)<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions and dimensions. 

© 2011 IXYS All rights reserved 

20110119a 

4 - 5 

**FII 30-06D** 

## **Diode** 

**==> picture [504 x 435] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 2000 40<br>TVJ= 100°C TVJ= 100°C<br>A nC VR = 300V A V R  = 300V<br>30 1500 30<br>IF TVJ=150°C Qr IRM<br>TVJ=100°C IF= 30A<br>20 T VJ =  25°C 1000 20 I F = 15A<br>IF= 30A IF= 7.5A<br>IF= 15A<br>IF= 7.5A<br>10 500 10<br>0 0 0<br>0 1 2 V 100 A/ µ s 1000 0 200 400 600 A/800 µ s 1000<br>VF -diF/dt -diF/dt<br>Forward current IF versus VF Reverse recovery charge Qr Peak reverse current IRM<br>versus -diF/dt versus  -diF/dt<br>2.0 120 20 1.6<br>ns T V VJR = 100°C = 300V V TI F  VJ  = 15A= 100°C VFR µ s<br>110 VFR tfr<br>1.5 trr 15 1.2<br>Kf<br>100 I F = 30A<br>IF= 15A tfr<br>1.0 I F = 7.5A 10 0.8<br>IRM 90<br>0.5 Q r 5 0.4<br>80<br>15-06A<br>0.0 70 0 0.0<br>0 40 80 120 °C 160 0 200 400 600 A/800 µ s 1000 0 200 400 600 A/800 µ s 1000<br>TVJ -diF/dt diF/dt<br>Dynamic parameters Qr, IRM Recovery time trr versus -diF/dt Peak forward voltage VFR and tfr<br>versus TVJ versus diF/dt<br>**----- End of picture text -----**<br>


**==> picture [486 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 (Z thJH is measured using 50<br>µm thermal grease)<br>1<br>FRED<br>D = 0<br>D = 0.005 0.1 ZthJH [K/W]<br>D = 0.01<br>D = 0.02<br>D = 0.05<br>D = 0.1  0.01<br>D = 0.2<br>D = 0.5<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t(s)<br> Transient thermal resistance junction to heatsink<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions and dimensions. 

© 2011 IXYS All rights reserved 

20110119a 

5 - 5 



## Links

- [View this product on Novapart](https://novapart.co/products/FII30-06D/igbt-30-a-24-v-100-w-600-isoplus-i4-pac-5-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/ixys-semiconductor/fii30-06d/igbt-600v-30a-100w-isoplus-i4/dp/2674739)
---

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