# IGBT, 150 A, 1.7 V, 790 W, 1.2 kV, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:2981093/) **URL**: https://novapart.co/products/FGY75T120SQDN/igbt-150-a-17-v-790-w-12-kv-to-247-3-pins **SKU**: FGY75T120SQDN **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €4.4600 **Stock**: 10+ **Lead Time**: 176 days (indicative) ## Description DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:790W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pin ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 790W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 175°C | | Continuous Collector Current | 150A | | Collector Emitter Voltage Max | 1.2kV | | Collector Emitter Saturation Voltage | 1.7V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2981093/) FGY75T120SQDN ## Ultra Field Stop IGBT, 1200 V, 75 A ## **General Description** This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage. ## **Features** - Extremely Efficient Trench with Field Stop Technology - Maximum Junction Temperature: TJ = 175°C - Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 75 A - 100% of the Parts Tested for ILM(1) - Soft Fast Reverse Recovery Diode - Optimized for High Speed Switching - RoHS Compliant ## **Applications** - Solar Inverter, UPS ## **ABSOLUTE MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) |(TJ = 25J = 25= 25°C unless otherwise stated)
~~a~~|C unless otherwise stated)
|~~ee~~
|| |---|---|---|---| |**Symbol**
~~a ee~~
~~a~~|**Parameter**
~~ee~~
|**Value**
~~ee~~
~~ee~~

~~ee~~|**Unit**
~~ee~~
| |VCES
~~a ee~~|Collector to Emitter Voltage
~~ee~~|1200
~~ee~~
~~ee~~
~~ee~~|V
~~ee~~| |VGES
~~—_———~~
~~2~~|Gate to Emitter Voltage
~~—_———~~
|±20
~~ee~~
~~—_———~~
~~ee~~|V
~~—_———~~| ||Transient Gate to Emitter Voltage
~~—_———~~
~~ee~~
~~ee~~|±30
~~—_———~~
~~ee~~
~~ee~~
~~ee~~|V
~~—_———~~
~~ee~~
~~ee~~| |IC
~~2 ~~
~~a~~
~~a~~|Collector Current @ TC= 25°C
~~ee~~
|150
~~ee~~
~~ee~~
~~ee~~
|A
~~ee~~
| ||Collector Current @ TC= 100°C
~~ee~~
~~ee~~

|75
~~ee~~
~~ee~~
~~ee~~
~~ee~~

~~ee~~
|A
~~ee~~
~~ee~~

| |ILM(1)

~~a ee~~
~~a~~|Pulsed Collector Current @ TC= 25°C
~~ee~~
~~ee~~
|300
~~ee~~
~~ee~~
~~ee~~
~~ee~~

~~ee~~|A
~~ee~~
~~ee~~

~~ee~~| |ICM(2)
~~a ee~~|Pulsed Collector Current
~~ee~~|300
~~ee~~
~~ee~~
~~ee~~|A
~~ee~~
~~ee~~| |IF
~~eee~~
~~a~~|Diode Forward Current @ TC= 25°C
~~eee~~
|150
~~ee ~~
~~eee~~
~~ee~~
|A
~~ee~~
~~eee~~
~~ee~~
| ||Diode Forward Current @ TC= 100°C
~~eee~~
~~ee~~
|75
~~eee~~
~~ee~~
~~ee~~

~~ee~~|A
~~eee~~
~~ee~~
~~ee~~

~~ee~~| |IFM
~~a~~|Pulsed Diode Max. Forward Current
~~ee~~|300
~~ee ~~
~~ee~~
~~ee~~|A
~~ee~~
~~ee~~
~~ee~~| |PD
~~a~~|Maximum Power Dissipation
@ TC= 25°C
@ TC= 100°C
|790
395
~~ee ~~
~~ee~~
|W
~~ee~~
| |TJ
~~a ee~~
~~a~~|Operating Junction Temperature
~~ee~~
|−55 to +175
~~ee~~
~~ee~~

~~ee~~|°C
~~ee~~
| |Tstg
~~a ee~~|Storage Temperature Range
~~ee~~|−55 to +175
~~ee~~
~~ee~~
~~ee~~
~~eee~~|°C
~~ee~~
~~ee~~| |TL
~~ee~~|Maximum Lead Temp. for soldering
Purposes, 1/8″from case for 5 s
~~ee~~|300
~~ee~~
~~ee~~
~~eee~~|°C
~~ee~~
~~ee~~| ## **www.onsemi.com** **==> picture [82 x 218] intentionally omitted <==** **----- Start of picture text -----**
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TO−247−3LD
CASE 340CD
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## **MARKING DIAGRAM** **==> picture [170 x 121] intentionally omitted <==** **----- Start of picture text -----**
$Y&Z&3&K
FGY75T120
SQDN
&Y = ON Semiconductor Logo
&3 = Data Code (Year & Week)
&K = Lot
FGY75T120SQDN = Specific Device Code
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## **ORDERING INFORMATION** See detailed ordering and shipping information on page 3 of this data sheet. 1. VCC = 800 V, VGE = 15 V, IC = 300 A, RG = 68 Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. Publication Order Number: **FGY75T120SQDN/D** **1** © Semiconductor Components Industries, LLC, 2018 **September, 2018 − Rev. 1** **FGY75T120SQDN** ## **THERMAL CHARACTERISTICS** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |R�JC(IGBT)|Thermal Resistance, Junction to Case, Max.|0.19|°C/W| |R�JC(Diode)|Thermal Resistance, Junction to Case, Max.|0.38|°C/W| |R�JA|Thermal Resistance, Junction to Ambient, Max.|40|°C/W| ## **ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL**|**CHARACTERISTICS OF THE IG**|**BT**(TC= 25°C unless otherwise not|ed)|||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||| |BVCES|Collector to Emitter Breakdown
Voltage|VGE= 0 V, IC= 500�A|1200|−|−|V| |ICES|Collector Cut-Off Current|VCE= VCES, VGE= 0 V|−|−|400|�A| |IGES|G−E Leakage Current|VGE= VGES, VCE= 0 V|−|−|±200|nA| |**ON CHARACTERISTICS**||||||| |VGE(th)|G−E Threshold Voltage|IC= 400�A, VCE= VGE|4.5|5.5|6.5|V| |VCE(sat)|Collector to Emitter Saturation
Voltage|IC= 75 A,VGE= 15 V|−|1.7|1.95|V| |||IC= 75 A,VGE= 15 V, TC= 175°C|−|2.3|−|V| |**DYNAMIC CHARACTERISTICS**||||||| |Cies|Input Capacitance|VCE= 20 V,VGE= 0 V, f = 1 MHz|−|9060|−|pF| |Coes|Output Capacitance||−|242|−|pF| |Cres|Reverse Transfer Capacitance||−|137|−|pF| |**SWITCHING CHARACTERISTICS**||||||| |td(on)|Turn-On Delay Time|VCC= 600 V, IC= 75 A,
RG= 10�, VGE= 15 V,
Inductive Load, TC= 25°C|−|64|−|ns| |tr|Rise Time||−|96|−|ns| |td(off)|Turn-Off Delay Time||−|332|−|ns| |tf|Fall Time||−|28|−|ns| |Eon|Turn-On Switching Loss||−|6.25|−|mJ| |Eoff|Turn-Off Switching Loss||−|1.96|−|mJ| |Ets|Total Switching Loss||−|8.21|−|mJ| |td(on)|Turn-On Delay Time|VCC= 600 V, IC= 75 A,
RG= 10�, VGE= 15 V,
Inductive Load, TC= 175°C|−|56|−|ns| |tr|Rise Time||−|80|−|ns| |td(off)|Turn-Off Delay Time||−|364|−|ns| |tf|Fall Time||−|88|−|ns| |Eon|Turn-On Switching Loss||−|8.67|−|mJ| |Eoff|Turn-Off Switching Loss||−|3.2|−|mJ| |Ets|Total Switching Loss||−|11.87|−|mJ| |Qg|Total Gate Charge|VCE= 600 V, IC= 75 A,
VGE= 15 V|−|399|−|nC| |Qge|Gate to Emitter Charge||−|74|−|nC| |Qgc|Gate to Collector Charge||−|192|−|nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **FGY75T120SQDN** **ELECTRICAL CHARACTERISTICS OF THE DIODE** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL**|**CHARACTERISTICS OF**|**HE DIODE**(TC= 25°C unless otherwise no|**HE DIODE**(TC= 25°C unless otherwise no|ted)|||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**| |VFM|Diode Forward Voltage|IF= 75 A|TC= 25°C|−|3.4|4|V| ||||TC= 175°C|−|2.7|−|| |trr|Diode Reverse Recovery
Time|VR= 600 V, IF= 75 A,
dIF/dt = 500 A/�s|TC= 25°C|−|99|−|ns| ||||TC= 175°C|−|329|−|| |Qrr|Diode Reverse Recovery
Charge||TC= 25°C|−|1001|−|nC| ||||TC= 175°C|−|5696|−|| |Irrm|Diode Reverse Recovery
Current||TC= 25°C|−|20|−|A| ||||TC= 175°C|−|34|−|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **PACKAGE MARKING AND ORDERING INFORMATION** |**Part Number**|**Top Mark**|**Package**|**Shipping**| |---|---|---|---| |FGY75T120SQDN|FGY75T120SQDN|TO−247−3LD
(Pb−Free)|30 / Tube| **www.onsemi.com** **3** **FGY75T120SQDN** ## **TYPICAL CHARACTERISTICS** **Figure 1. Typical Output Characteristics (25** ° **C)** **Figure 2. Typical Output Characteristics (175** ° **C)** **Figure 3. Typical Saturation Voltage Characteristics** **Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level** **Figure 5. Saturation Voltage vs. VGE (25** ° **C)** **Figure 6. Saturation Voltage vs. VGE (175** ° **C)** **www.onsemi.com** **4** **FGY75T120SQDN** ## **TYPICAL CHARACTERISTICS** **Figure 7. Capacitance Characteristics** **Figure 8. Gate Charge Characteristics** **Figure 9. Turn−On Characteristics vs. Gate Resistance** **Figure 10. Turn−Off Characteristics vs. Gate Resistance** **Figure 11. Turn−On Characteristics vs. Collector Current** **Figure 12. Turn−Off Characteristics vs. Collector Current** **www.onsemi.com** **5** **FGY75T120SQDN** ## **TYPICAL CHARACTERISTICS** **Figure 13. Switching Loss vs. Gate Resistance** **Figure 14. Switching Loss vs. Collector Current** **Figure 15. Load Current vs. Frequency** **Figure 16. SOA Characteristics** **Figure 17. Forward Characteristics** **Figure 18. Reverse Recovery Time vs. diF/dt** **www.onsemi.com** **6** **FGY75T120SQDN** ## **TYPICAL CHARACTERISTICS** **Figure 19. Reverse Recovery Charge vs. diF/dt** **Figure 20. Reverse Recovery Current vs. diF/dt** **Figure 21. Transient Thermal Impedance of IGBT** **Figure 22. Transient Thermal Impedance of Diode** **www.onsemi.com** **7** **FGY75T120SQDN** ## **PACKAGE DIMENSIONS** **TO−247−3LD** CASE 340CD ISSUE A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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