# IGBT, N Channel, 240 A, 1.6 V, 882 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2610672/)

**URL**: https://novapart.co/products/FGY160T65SPD-F085/igbt-n-channel-240-a-16-v-882-w-650-to-247-3-pins
**SKU**: FGY160T65SPD-F085
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €7.2000
**Stock**: 500+
**Lead Time**: 92 days (indicative)

## Description

DC Collector Current:240A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:882W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | Trench |
| Power Dissipation | 882W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 240A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2610672/)

## IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A 

## FGY160T65SPD-F085 

## **Benefits** 

**==> picture [437 x 128] intentionally omitted <==**

**----- Start of picture text -----**<br>
• Very Low Conduction and Switching Losses for a High Efficiency www.onsemi.com<br>Operation in Various Applications<br>• Rugged Transient Reliability<br>• Outstanding Parallel Operation Performance with Balance Current C<br>Sharing<br>• Low EMI<br>Features<br>G<br>• AEC−Q101 Qualified and PPAP Capable<br>• Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A E<br>**----- End of picture text -----**<br>


- Maximum Junction Temperature: TJ = 175°C 

- Positive Temperature Co−Efficient 

- Tight Parameter Distribution 

- High Input Impedance 

- 100% of the Parts are Dynamically Tested 

- Short circuit ruggedness > 6 s @ 25°C 

- Copacked with Soft, Fast Recovery Extremefast Diode 

- This Device is Pb−Free, Halogen Free/BFR Free and are RoHS G C 

- Compliant E **TO−247−3LD** 

- **Applications CASE 340CU** 

- Traction Inverter for HEV/EV 

- Auxiliary DC/AC Converter 

## **MARKING DIAGRAM** 

- Motor Drives 

- Other Power−Train Applications Requiring High Power Switch 

**==> picture [41 x 25] intentionally omitted <==**

**----- Start of picture text -----**<br>
$Y&Z&3&K<br>FGY160T<br>65SPD<br>**----- End of picture text -----**<br>


&Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FGY160T65SPD = Specific Device Code 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 

Publication Order Number: **FGY160T65SPD−F085/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **November, 2019 − Rev. 3** 

**FGY160T65SPD−F085** 

## **ABSOLUTE MAXIMUM RATINGS** 

|**Symbol**|**Parameter**|**Ratings**|**Unit**|
|---|---|---|---|
|VCES|Collector to Emitter Voltage|650|V|
|VGES|Gate to Emitter Voltage|±20|V|
||Transient Gate to Emitter Voltage|±30|V|
|IC|Collector Current @ TC= 25°C (Note 1)|240|A|
||Collector Current @ TC= 100°C|220|A|
|INominal|Nominal Current|160|A|
|ICM|Pulsed Collector Current|480|A|
|IFM|Diode Forward Current @ TC= 25°C (Note 1)|240|A|
||Diode Forward Current @ TC= 100°C|188|A|
|PD|Maximum Power Dissipation @ TC= 25°C|882|W|
||Maximum Power Dissipation @ TC= 100°C|441|W|
|SCWT|Short Circuit Withstand Time @ TC= 25°C|6|�s|
|�V/�t|Voltage Transient Ruggedness (Note 2)|10|V/ns|
|TJ|Operating Junction Temperature|−55 to +175|°C|
|Tstg|Storage Temperature Range|−55 to +175|°C|
|TL|Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds|300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited to bondwire. 

2. VCC = 400 V, VGE = 15 V, ICE = 480 A, Inductive load. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|R�JC(IGBT)|Thermal Resistance, Junction to Case|−|0.17|°C/W|
|R�JC(Diode)|Thermal Resistance, Junction to Case|−|0.32|°C/W|
|R�JA|Thermal Resistance, Junction to Ambient|−|40|°C/W|



## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Device Marking**|**Device**|**Package**|**Packing Type**|**Qty per Tube**|
|---|---|---|---|---|
|FGY160T65SPD|FGY160T65SPD−F085|TP−247−3LD|Tube|30 ea|



**ELECTRICAL CHARACTERISTICS OF THE IGBT** (TJ = 25 ° C unless otherwise noted) 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**|||||||
|BVCES|Collector to Emitter Breakdown Voltage|VGE= 0 V, IC= 1 mA|650|−|−|V|
|�BVCES/<br>�TJ|Temperature Coefficient of Breakdown<br>Voltage|VGE= 0 V, IC= 1 mA|−|0.6|−|V/°C|
|ICES|Collector Cut-Off Current|VCE= VCES, VGE= 0 V|−|−|40|�A|
|IGES|G−E Leakage Current|VGE= VGES, VCE= 0 V|−|−|±250|nA|
|**ON CHARACTERISTICS**|||||||
|VGE(th)|G−E Threshold Voltage|IC= 160 mA, VCE= VGE|4.3|5.3|6.3|V|
|VCE(sat)|Collector to Emitter Saturation Voltage|IC= 160 A,VGE= 15 V|−|1.6|2.05|V|
|||IC= 160 A,VGE= 15 V,<br>TJ= 175°C|−|2.15|−|V|



**www.onsemi.com** 

**2** 

**FGY160T65SPD−F085** 

**ELECTRICAL CHARACTERISTICS OF THE IGBT** (TJ = 25 ° C unless otherwise noted) (continued) 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**DYNAMIC CHARACTERISTICS**|||||||
|Cies|Input Capacitance|VCE= 30 V,VGE= 0 V,<br>f = 1 MHz|−|6710|−|pF|
|Coes|Output Capacitance||−|450|−|pF|
|Cres|Reverse Transfer Capacitance||−|55|−|pF|
|RG|Internal Gate Resistance|f = 1 MHz|−|3|−|�|
|**SWITCHING CHARACTERISTICS**|||||||
|Td(on)|Turn-On Delay Time|VCC= 400 V, IC= 160 A,<br>RG= 5�, VGE= 15 V,<br>Inductive Load, TJ= 25°C|−|53|−|ns|
|Tr|Rise Time||−|197|−|ns|
|Td(off)|Turn-Off Delay Time||−|98|−|ns|
|Tf|Fall Time||−|141|−|ns|
|Eon|Turn-On Switching Loss||−|12.4|−|mJ|
|Eoff|Turn-Off Switching Loss||−|5.7|−|mJ|
|Ets|Total Switching Loss||−|18.1|−|mJ|
|Td(on)|Turn-On Delay Time|VCC= 400 V, IC= 160 A,<br>RG= 5�, VGE= 15 V,<br>Inductive Load, TJ= 175°C|−|52|−|ns|
|Tr|Rise Time||−|236|−|ns|
|Td(off)|Turn-Off Delay Time||−|104|−|ns|
|Tf|Fall Time||−|204|−|ns|
|Eon|Turn-On Switching Loss||−|21|−|mJ|
|Eoff|Turn-Off Switching Loss||−|8.5|−|mJ|
|Ets|Total Switching Loss||−|29.5|−|mJ|
|Qg|Total Gate Charge|VCE= 400 V, IC= 160 A,<br>VGE= 15 V|−|163|245|nC|
|Qge|Gate to Emitter Charge||−|50|−|nC|
|Qgc|Gate to Collector Charge||−|49|−|nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**ELECTRICAL CHARACTERISTICS OF THE DIODE** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL**|**CHARACTERISTICS OF**|**THE DIODE**(TJ= 25°C unless otherwise no|**THE DIODE**(TJ= 25°C unless otherwise no|ted)||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|VFM|Diode Forward Voltage|IF= 160 A|TJ= 25°C|−|1.4|1.7|V|
||||TJ= 175°C|−|1.35|−||
|Erec|Reverse Recovery Energy|VCE= 400 V, IF= 160 A,<br>�IF/�t = 1000 A/�s|TJ= 25°C|−|598|−|�J|
||||TJ= 175°C|−|4000|−||
|Trr|Diode Reverse Recovery<br>Time||TJ= 25°C|−|132|−|ns|
||||TJ= 175°C|−|245|−||
|Qrr|Diode Reverse Recovery<br>Charge||TJ= 25°C|−|3.3|−|�C|
||||TJ= 175°C|−|12.5|−||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**www.onsemi.com** 

**3** 

**FGY160T65SPD−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

**Figure 1. Typical Output Characteristics** 

**Figure 2. Typical Output Characteristics** 

**Figure 3. Typical Saturation Voltage Characteristics** 

**Figure 4. Transfer Characteristics** 

**Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level** 

**Figure 6. Saturation Voltage vs. VGE** 

**www.onsemi.com** 

**4** 

**FGY160T65SPD−F085** 

**TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

**Figure 7. Saturation Voltage vs. VGE** 

**Figure 9. Capacitance Characteristics** 

**Figure 11. SOA Characteristics** 

**Figure 8. Saturation Voltage vs. VGE** 

**Figure 10. Gate Charge Characteristics** 

**Figure 12. Turn Off Switching SOA Characteristics** 

**www.onsemi.com** 

**5** 

**FGY160T65SPD−F085** 

**TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

**Figure 13. Turn−on Characteristics vs. Gate Resistance** 

**Figure 15. Turn−on Characteristics vs. Collector Current** 

**==> picture [187 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>Eon<br>10<br>Eoff Common Emitter<br>VCC = 400V, V GE = 15V<br>IC = 160A<br>TC = 25oC<br>TC = 175oC<br>1<br>0 10 20 30 40 50<br>Gate Resistance, R G [<br>Switching Loss [mJ]<br>**----- End of picture text -----**<br>


**Figure 17. Switching Loss vs. Gate Resistance** 

**Figure 14. Turn−off Characteristics vs. Gate Resistance** 

**Figure 16. Turn−off Characteristics vs. Collector Current** 

**==> picture [199 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Common Emitter<br>VGE = 15V, R G = 5<br>TC = 25oC<br>10 TC = 175oC E on<br>Eoff<br>1<br>0.1<br>0 20 40 60 80 100 120 140 160<br>Collector Current, IC [A]<br>Switching Loss [mJ]<br>**----- End of picture text -----**<br>


**Figure 18. Switching Loss vs. Collector Current** 

**www.onsemi.com** 

**6** 

**FGY160T65SPD−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

**Figure 19. Forward Characteristics** 

**Figure 20. Reverse Current** 

**Figure 21. Stored Charge** 

**Figure 22. Reverse Recovery Time** 

**Figure 23. Collector to Emitter Breakdown Voltage vs. Junction Temperature** 

**www.onsemi.com** 

**7** 

**FGY160T65SPD−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

**Figure 24. Transient Thermal Impedance of IGBT** 

**Figure 25. Transient Thermal Impedance of Diode** 

**www.onsemi.com** 

**8** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **TO−247−3LD** CASE 340CU ISSUE A 

DATE 16 SEP 2019 

**DOCUMENT NUMBER: 98AON13773G DESCRIPTION: TO−247−3LD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2018 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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◊ 

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---

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