# IGBT, 30 A, 2.2 V, 42 W, 600 V, TO-220F, 3 Pins

![Product image](https://novapart.co/image/farnell:3368690/)

**URL**: https://novapart.co/products/FGPF15N60UNDF/igbt-30-a-22-v-42-w-600-to-220f-3-pins
**SKU**: FGPF15N60UNDF
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.3000
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 42W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220F |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 30A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3368690/)

## **Is Now Part of** 

## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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## **FGPF15N60UNDF** 

## **600 V, 15 A Short Circuit Rated IGBT** 

## **Features** 

- Short Circuit Rated 10us 

- High Current Capability 

- High Input Impedance 

- Fast Switching 

- RoHS Compliant 

## **General Description** 

Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances. 

## **Applications** 

- Sewing Machine, CNC, Home Appliances, Motor Control 

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C<br>G<br>G  C  E<br>TO-220F<br>(Retractable) E<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Symbol**|**Description**|**Ratings**|**Unit**|
|---|---|---|---|
|VCES|Collector to Emitter Voltage|600|V|
|VGES|Gate to Emitter Voltage|± 20|V|
|IC|Collector Current<br>@ TC= 25oC|30|A|
||Collector Current<br>@ TC= 100oC|15|A|
|ICM (1)|Pulsed Collector Current                                   @ TC= 25oC|45|A|
|IF|Diode Forward Current<br>@ TC= 25oC|15|A|
||Diode Forward Current<br>@ TC= 100oC|7.5|A|
|PD|Maximum Power Dissipation<br>@ TC= 25oC|42|W|
||Maximum Power Dissipation<br>@ TC= 100oC|17|W|
|TJ|Operating Junction Temperature|-55 to +150|oC|
|Tstg|Storage Temperature Range|-55 to +150|oC|



**Notes:** 

1: Repetitive rating: Pulse width limited by max. junction temperature 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|
|RθJC(IGBT)|Thermal Resistance, Junction to Case|-|3.0|oC/W|
|RθJC(Diode)|Thermal Resistance, Junction to Case|-|4.9|oC/W|
|RθJA|Thermal Resistance, Junction to Ambient (PCB Mount)(2)|-|62.5|oC/W|



**Notes:** 

- 2: Mountde on 1” square PCB (FR4 or G-10 material) 

**1** 

©2012 Fairchild Semiconductor Corporation FGPF15N60UNDF Rev. C2 

www.fairchildsemi.com 

|**Electrical Characteristics of the IGBT**<br>~~ee~~|**Electrical Characteristics of the IGBT**<br>~~tn~~|**Electrical Characteristics of the IGBT**TC= 25°C unless otherwise noted<br>~~rr~~|||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~ee~~<br>~~**l**~~|**Parameter**<br>~~tn~~<br>~~**l**c~~|**Test Conditions**<br>~~rr~~|**Min.**|**Typ.**|**Max.**|**Unit**|
|**Off Characteristics**<br>~~ee~~<br>~~tn rr~~<br>~~**l**c~~<br>~~twllO—=Eelel~~|||||||
|BVCES<br>~~**l**~~<br>~~twllO—=Eelel~~|Collector to Emitter Breakdown Voltage V<br>~~**l**c~~<br>~~twllO—=Eelel~~|Collector to Emitter Breakdown Voltage VGE= 0 V, IC= 250μA<br>~~twllO—=Eelel~~|600<br>~~twllO—=Eelel~~|-<br>~~twllO—=Eelel~~|-<br>~~twllO—=Eelel~~|V<br>~~twllO—=Eelel~~|
|ICES<br>~~ee~~|Collector Cut-Off Current<br>~~ee~~|VCE= VCES, VGE= 0 V<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|mA<br>~~ee~~|
|IGES<br>~~ee~~|G-E Leakage Current<br>~~ee~~|VGE= VGES, VCE= 0 V<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|±10<br>~~ee~~|μA<br>~~ee~~|
|**On Characteristics**<br>~~ee~~|||||||
|VGE(th)<br>~~a~~|G-E Threshold Voltage|IC= 15 mA, VCE= VGE<br>~~ee~~|5.5|6.8<br>~~ee~~|8.5<br>~~ee~~|V<br>~~ee~~|
|VCE(sat)<br>~~a~~|Collector to Emitter Saturation Voltage|IC= 15 A,VGE= 15 V<br>~~ee~~|-|2.2<br>~~ee~~|2.7<br>~~ee~~|V<br>~~ee~~|
|||IC= 15 A,VGE= 15 V,<br>TC= 125oC<br>~~ee~~|-|2.7<br>~~ee~~|-<br>~~ee~~|V<br>~~ee~~|
|**Dynamic Characteristics**<br>~~a~~<br>~~ee~~<br>~~ee~~|||||||
|Cies<br>~~——————~~|Input Capacitance<br>~~——————~~|VCE= 30 V,VGE= 0 V,<br>f = 1MHz<br>~~——————~~|-<br>~~——————~~|619<br>~~——————~~|-<br>~~——————~~|pF<br>~~——————~~|
|Coes<br>~~——————~~|Output Capacitance<br>~~——————~~||-<br>~~——————~~|80<br>~~——————~~|-<br>~~——————~~|pF<br>~~——————~~|
|Cres<br>~~——————~~|Reverse Transfer Capacitance<br>~~——————~~||-<br>~~——————~~|24<br>~~——————~~|-<br>~~——————~~|pF<br>~~——————~~|
|**Switching Characteristics**<br>~~——————~~|||||||
|td(on)|Turn-On Delay Time|VCC= 400 V, IC= 15 A,<br>RG= 10Ω, VGE= 15 V,<br>Inductive Load, TC= 25oC|-|9.3|-|ns|
|tr|Rise Time||-|9.8|-|ns|
|td(off)|Turn-Off Delay Time||-|54.8|-|ns|
|tf|Fall Time||-|9.9|12.8|ns|
|Eon|Turn-On Switching Loss||-|0.37|-|mJ|
|Eoff|Turn-Off Switching Loss||-|0.067|-|mJ|
|Ets|Total Switching Loss||-|0.44|-|mJ|
|td(on)|Turn-On Delay Time|VCC= 400 V, IC= 15 A,<br>RG= 10Ω, VGE= 15 V,<br>Inductive Load, TC= 125oC|-|8.9|-|ns|
|tr|Rise Time||-|9.9|-|ns|
|td(off)|Turn-Off Delay Time||-|56.6|-|ns|
|tf|Fall Time||-|13.2|-|ns|
|Eon|Turn-On Switching Loss||-|0.54|-|mJ|
|Eoff<br>~~fs~~|Turn-Off Switching Loss||-|0.11|-|mJ|
|Ets<br>~~fs~~|Total Switching Loss||-|0.65|-|mJ|
|Tsc<br>~~fs~~|Short Circuit Withstand Time|VCC= 350 V,<br>RG= 100Ω, VGE= 15 V,<br>TC= 150oC|10|-|-|μs|



**2** 

©2012 Fairchild Semiconductor Corporation FGPF15N60UNDF Rev. C2 

www.fairchildsemi.com 

## **Electrical Characteristics of the IGBT** TC = 25°C unless otherwise noted 

|Qg|Total Gate Charge|VCE= 400 V, IC= 15 A,<br>VGE= 15 V|-|43|-|nC|
|---|---|---|---|---|---|---|
|Qge|Gate to Emitter Charge||-|6|-|nC|
|Qgc|Gate to Collector Charge||-|26|-|nC|



## **Electrical Characteristics of the Diode** TC = 25°C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|VFM|Diode Forward Voltage|IF= 15 A|TC= 25oC|-|1.6|2.2|V|
||||TC= 125oC|-|1.5|-||
|trr|Diode Reverse Recovery Time|IF=15 A, dIF/dt = 200 A/μs|TC= 25oC|-|82.4||ns|
||||TC= 125oC|-|142|-||
|Qrr|Diode Reverse Recovery Charge||TC= 25oC|-|213|-|nC|
||||TC= 125oC|-|541|-||



**3** 

©2012 Fairchild Semiconductor Corporation FGPF15N60UNDF Rev. C2 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

**Figure 1. Typical Output Characteristics                   Figure 2. Typical Output Characteristics** 

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80 80<br>TC = 25 o C 20V 17V TC = 125 o C 20V 17V<br>70 70<br>15V 15V<br>60 eTBeanery Anne 60 TFPf<br>50 50<br>VGE =12V<br>Sonn” /GennEe SaSSnnD 4558<br>40 fe 40 2 -—— V GE  = 12V<br>30 rT 30 OG<br>20 WT 20 Wr<br>10 na? ZSSSSSEe 10 TAT<br>0 SH 0 =>ZEneneeee<br>0.0 1.5 3.0 4.5 6.0 7.5 9.0 0.0 1.5 3.0 4.5 6.0 7.5 9.0<br>Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]<br>Figure 3. Typical Saturation Voltage                              Figure 4. Transfer Characteristics<br>                  Characteristics<br>80 80<br>Common Emitter<br>70 Common Emitter 70 VCE = 20V<br>60 VT TCC GE = 25  = 125  = 15VoCo C  60 T TCC  = 25  = 125o C o C<br>50 [|| HePS 50 Pe|. [tH<br>40 TL 40 eee<br>30 EW 30 eeae<br>20 20<br>10 tA 10 ee<br>0 Sa? eeeeeeee 0 SE<br>0 1 2 3 4 5 6 0 3 6 9 12 15<br>Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]<br>Figure 5. Saturation Voltage vs. Case                           Figure 6. Saturation Voltage vs. VGE<br>                  Temperature at Variant Current Level<br>4.5<br>20<br>Common Emitter Common Emitter<br>4.0 [UL V GE  = 15V TC = 25 o C<br>30A 16<br>3.5 SS FE Ld<br>3.0 =e 12 et<br>15A<br>2.5<br>Peet 8 EEE<br>2.0<br>15A<br>1.5 I C  = 7.5A 4 30A<br>— ao<br>IC = 7.5A<br>1.0 a<br>25 50 75 100 125 0 4 8 12 16 20<br>Case Temperature, TC [ [o] C] Gate-Emitter Voltage, VGE [V]<br> [A]  [A]<br>C C<br>Collector Current, I Collector Current, I<br>Collector Current, I [A]C Collector Current, I [A]C<br> [V]<br> [V]<br>CE<br>CE<br>V<br>,<br>Collector-Emitter Voltage, V Collector-Emitter Voltage<br>**----- End of picture text -----**<br>


**4** 

©2012 Fairchild Semiconductor Corporation FGPF15N60UNDF Rev. C2 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

**Figure 7. Saturation Voltage vs. VGE                           Figure 8. Capacitance Characteristics** 

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20 3000<br>Common Emitter<br>APL TC = 25 o C 1000 EEE Cies<br>16<br>Coes<br>12 Ste to ie ES<br>Cres<br>100<br>8 a) FER<br>15A<br>Common Emitter<br>30A<br>4 V GE  = 0V, f = 1MHz<br>IC = 7.5A T C  = 25oC<br>Kes——— 10 fs<br>0<br>4 8 12 16 20 1 10 30<br>Gate-Emitter Voltage, VGE [V] Collector-Emitter Voltage, VCE [V]<br>Figure 9. Gate charge Characteristics                           Figure 10. SOA Characteristics<br>15 100<br>200V<br>10 μ s<br>12 400V<br>VCC = 100V 10<br>100 μ s<br>9 anes<br>1ms<br>dln 1<br>10 ms<br>6<br>Single Nonrepetitive DC<br>3 POCHTT)O) 0.1 peers Pulse TC = 25 [o] C aS<br>Common Emitter Curves must be derated<br>o linearly with increase<br>T C  = 25 C in temperature<br>0 ALL} 0.01 ass<br>0 5 10 15 20 25 30 35 40 45 50 1 10 100 1000<br>Gate Charge, Qg [nC] Collector-Emitter Voltage, VCE [V]<br>Figure 11. Turn-on Characteristics vs.                          Figure 12. Turn-off Characteristics vs.<br>                  Gate Resistance                                                               Gate Resistance<br>50 1000 —_<br>Common Emitter<br>40 FFE VCC = 400V, VGE = 15V<br>I C  = 15A<br>30 Ft | tt | TC = 25oC<br>TC = 125oC td(off)<br>20 100<br>tr<br>Common Emitter<br>10 t d(on) VCC = 400V, VGE = 15V<br>IC = 15A<br>T C  = 25oC    10 tf<br>TC = 125 o C<br>5 A)ae sf SS<br>0 10 20 30 40 50 60 0 10 20 30 40 50 60<br>Gate Resistance, RG [ Ω ] Gate Resistance, RG [ Ω ]<br> [V]<br>CE<br>V<br>Collector-Emitter Voltage,  Capacitance [pF]<br> [V]<br>GE Collector Current, I [A]c<br>Gate-Emitter Voltage, V<br>Switching Time [ns] Switching Time [ns]<br>**----- End of picture text -----**<br>


**Figure 9. Gate charge Characteristics                           Figure 10. SOA Characteristics** 

**Figure 11. Turn-on Characteristics vs.                          Figure 12. Turn-off Characteristics vs. Gate Resistance                                                               Gate Resistance** 

**5** 

©2012 Fairchild Semiconductor Corporation FGPF15N60UNDF Rev. C2 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

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Figure 13. Turn-on Characteristics vs.                           Figure 14. Turn-off Characteristics vs.<br>                  Collector Current                                                               Collector Current<br>50 300<br>Common Emitter<br>V GE  = 15V, R G  = 10 Ω<br>TC = 25oC<br>100 TC = 125oC<br>td(off)<br>10<br>td(on)<br>To) GE<br>t r Common EmitterVGE = 15V, RG = 10 Ω tf<br>T C  = 25oC   10<br>TC = 125oC<br>1 AES) 5 ES<br>0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35<br>Collector Current, IC [A] Collector Current, IC [A]<br>Figure 15. Switching Loss vs.                                         Figure 16. Switching Loss vs<br>                  Gate Resistance                                                               Collector Current<br>1000 3000<br>E on 1000 Eon<br>Eoff E off<br>100<br>100<br>Common Emitter<br>V CC  = 400V, V GE  = 15V Common Emitter<br>I C  = 15A V GE  = 15V, R G  = 10 Ω<br>T C = 25oC   TC = 25 o C<br>TC = 125oC TC = 125oC<br>10 Tr 10 al<br>0 10 20 30 40 50 60 0 5 10 15 20 25 30 35<br>Gate Resistance, RG [ Ω ] Collector Current, IC [A]<br>Figure 17. Turn off Switching                                          Figure 18. Forward Characteristics<br>                  SOA Characteristics<br>100<br>30<br>10 TJ = 125oC TJ = 75oC<br>10 T J  = 25oC<br>Safe Operating Area<br>VGE = 15V, TC = 125oC<br>1 FA 1 fe<br>1 10 100 1000<br>0 1 2 3<br>Collector-Emitter Voltage, VCE [V] Forward Voltage, VF [V]<br>Switching Time [ns] Switching Time [ns]<br>FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT<br>J]<br>μ<br>Switching Loss [ Switching Loss [uJ]<br> [A]<br>C  [A]<br>Collector Current, I Forward Current, IF<br>**----- End of picture text -----**<br>


**6** 

©2012 Fairchild Semiconductor Corporation FGPF15N60UNDF Rev. C2 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

**Figure 19. Reverse Current                                                                      Figure 20. Stored Charge** 

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100 0.7<br>TC = 25 o C<br>TJ = 125oC 0.6 Pot TC = 125 o C<br>10<br>200A/ μ s<br>0.5<br>PT<br>1<br>0.4<br>TJ = 75oC Ph ee<br>0.1 0.3 neEe ane di F /dt = 100A/ μ s<br>0.2 200A/ μ s<br>avseaall<br>0.01 TJ = 25 o C<br>0.1 ee di F /dt = 100A/ μ s<br>1E-3 0.0 Eicatatnenne<br>50 200 400 600 0 2 4 6 8 10 12 14 16 18 20<br>Reverse Voltage, VR [V] Forward Current, IF [A]<br>Figure 21. Reverse Recovery Time<br>200<br>TTCC = 25 = 125oC     o C  di F /dt = 100A/ μ s<br>150<br>200A/ μ s<br>100 iiastad diF/dt = 100A/ e μ s<br>200A/ μ s<br>a Lo<br>50<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>Forward Current, IF [A]<br> [nC]<br>A] rr<br>μ<br> [<br>R<br>Reverse Current , I<br>Stored Recovery charge, Q<br> [ns]<br>rr<br>Reverse Recovery Time, t<br>**----- End of picture text -----**<br>


## **Figure 21. Reverse Recovery Time** 

## **Figure 22.Transient Thermal Impedance of IGBT** 

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1<br>5 0.5 0.5 eae<br>0.2<br>0.11 seis 0.10.2 | aeeaa<br>0.1<br>0.05<br>0.05 PDM<br>i 0.02  ar age SRS<br>0.1 0.012 ail Stil Suu gti t 1 t2<br>Duty Factor, D = t1/t2 PDM<br>single pulse0.01<br>[Peak T][j][ = Pdm x Zthjc + T] t 1 C<br>0.010.01 t2<br>1E-5single pulse1E-4 1E-3 0.01 0.1 Duty Factor, D = t1/t21 10<br>[Peak T][j][ = Pdm x Zth][j][c + T] C<br>0.005 Ae4 eee Rectangular Pulse Duration [sec] ee |<br>10-5 10-4 10-3 10-2 10-1 100 101<br>Rectangular Pulse Duration [sec]<br>Thermal Response [Zthjc]<br>Thermal Response [Zthjc]<br>**----- End of picture text -----**<br>


**7** 

©2012 Fairchild Semiconductor Corporation FGPF15N60UNDF Rev. C2 

www.fairchildsemi.com 

## **Mechanical Dimensions** 

## **Figure 23.   TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003_ 

**8** 

©2012 Fairchild Semiconductor Corporation FGPF15N60UNDF Rev. C2 

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## **ANTI-COUNTERFEITING POLICY** 

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to<br>make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



Rev. I66 

**9** 

©2012 Fairchild Semiconductor Corporation 

www.fairchildsemi.com 

FGPF15N60UNDF Rev. C2 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/FGPF15N60UNDF/igbt-30-a-22-v-42-w-600-to-220f-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/onsemi/fgpf15n60undf/igbt-600v-30a-150deg-c-42w/dp/3368690)
---

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