# IGBT, 26.9 A, 1.1 V, 166 W, 400 V, TO-220AB, 3 Pins ![Product image](https://novapart.co/image/farnell:3253704/) **URL**: https://novapart.co/products/FGP3440G2-F085/igbt-269-a-11-v-166-w-400-to-220ab-3-pins **SKU**: FGP3440G2-F085 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €1.4400 **Stock**: 50+ ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | EcoSPARK 2 | | Power Dissipation | 166W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-220AB | | Operating Temperature Max | 175°C | | Continuous Collector Current | 26.9A | | Collector Emitter Voltage Max | 400V | | Collector Emitter Saturation Voltage | 1.1V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3253704/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [475 x 672] intentionally omitted <==** **----- Start of picture text -----**
FAIRCHILD.
May 2014
FGB3440G2_F085 / FGD3440G2_F085
FGP3440G2_F085
EcoSPARK [®] 2 335mJ, 400V, N-Channel Ignition IGBT
Features Applications
|| SCIS Energy = 335mJ at TJ = 25 [o] C Automotive lgnition Coil Driver Circuits
| Logic Level Gate Drive | Coil On Plug Applications
| Qualified to AEC Q101 poHs
RoHS Compliant s4
S
):2
y
r C Co
C, ct
Package Symbol
JEDEC TO-263AB JEDEC TO-220AB
D²-Pak E
C
G
COLLECTOR
G
_ E II
I R1 1
GATE I K o
JEDEC TO-252AA I 1
D-Pak I R2 1
I 1
G
EMITTER
| COLLECTOR I 1
E (FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
a Symbol Parameter Ratings Units
a BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) 400 V
a BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V
a ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 335 mJ
a ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 195 mJ
a IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C 26.9 A
a IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C 25 A
a VGEM Gate to Emitter Voltage Continuous ±10 V
ee PD a Power Dissipation Total, at TPower Dissipation Derating, for TC = 25°C C > 25 [o] C 1661.1 W/W [o] C
a TJ Operating Junction Temperature Range -40 to +175 oC
a TSTG Storage Junction Temperature Range -40 to +175 oC
a TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 oC
a TPKG Max. Lead Temp. for Soldering (Package Body for 10s) 260 oC
a ESD Electrostatic Discharge Voltage at100pF, 1500Ω 4 kV
@2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085
**----- End of picture text -----**
## **Package Marking and Ordering Information** |**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---| |FGB3440G2|FGB3440G2_F085|TO-263AB|330mm|24mm|800| |FGD3440G2|FGD3440G2_F085|TO-252AA|330mm|16mm|2500| |FGP3440G2|FGP3440G2_F085|TO-220AB|Tube|N/A|50| ## **Electrical Characteristics** TA = 25°C unless otherwise noted |**Electr**|**cal Characteristics**TA= 25°|C unless otherwise noted|C unless otherwise noted||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**||**Min**|**Typ**|**Max**|**Units**| |**Off State Characteristics**|||||||| |BVCER|Collector to Emitter Breakdown Voltage|ICE= 2mA, VGE= 0,
RGE= 1KΩ,
TJ= -40 to 150oC||370|400|430|V| |BVCES|Collector to Emitter Breakdown Voltage|ICE= 10mA, VGE= 0V,
RGE= 0,
TJ= -40 to 150oC||390|420|450|V| |BVECS|Emitter to Collector Breakdown Voltage|ICE= -20mA, VGE= 0V,
TJ= 25°C||28|-|-|V| |BVGES|Gate to Emitter Breakdown Voltage|IGES= ±2mA||±12|±14|-|V| |ICER|Collector to Emitter Leakage Current|VCE= 250V, RGE=1KΩ|TJ= 25oC|-|-|25|μA| ||||TJ= 150oC|-|-|1|mA| |IECS|Emitter to Collector Leakage Current|VEC= 24V,
|TJ= 25oC|-|-|1|mA| ||||TJ= 150oC|-|-|40|| |R1|Series Gate Resistance|||-|120|-|Ω| |R2|Gate to Emitter Resistance|||10K|-|30K|Ω| |**On State Characteristics**|||||||| |VCE(SAT)|Collector to Emitter Saturation Voltage|ICE= 6A, VGE= 4V,|TJ= 25oC|-|1.1|1.2|V| |VCE(SAT)|Collector to Emitter Saturation Voltage|ICE= 10A, VGE= 4.5V,|TJ= 150oC|-|1.3|1.45|V| |VCE(SAT)|Collector to Emitter Saturation Voltage|ICE= 15A, VGE= 4.5V,|TJ= 150oC|-|1.6|1.75|V| |ESCIS|Self Clamped Inductive Switching|L = 3.0 mHy, VGE= 5V
RG= 1KΩ,(Note 1)|TJ= 25oC|-|-|335|mJ| ## **Notes:** 1: Self Clamping Inductive Switching Energy(ESCIS25) of 335mJ is based on the test conditions that is starting TJ=25[o] C; L=3mHy, ISCIS=15A,VCC=100V during inductor charging and VCC=0V during the time in clamp . 2: Self Clamping Inductive Switching Energy (ESCIS150) of 195mJ is based on the test conditions that is starting TJ=150[o] C; L=3mHy, ISCIS=11.4A,VCC=100V during inductor charging and VCC=0V during the time in clamp. @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 www.fairchildsemi.com **2** **Electrical Characteristics** TA = 25°C unless otherwise noted |**Electr**|**cal Characteristics**TA= 25°|C unless otherwise noted|C unless otherwise noted||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**||**Min**|**Typ**|**Max**|**Units**| |**Dynamic Characteristics**|||||||| |QG(ON)|Gate Charge|ICE= 10A, VCE= 12V,
VGE= 5V||-|24|-|nC| |VGE(TH)|Gate to Emitter Threshold Voltage|ICE= 1mA, VCE= VGE,|TJ= 25oC|1.3|1.7|2.2|V| ||||TJ= 150oC|0.75|1.2|1.8|| |VGEP|Gate to Emitter Plateau Voltage|VCE= 12V, ICE= 10A||-|2.8|-|V| |**Switching Characteristics**|||||||| |td(ON)R|Current Turn-On DelayTime-Resistive|VCE= 14V, RL= 1Ω
VGE= 5V, RG= 1KΩ
TJ= 25oC,||-|1.0|4|μs| |trR|Current Rise Time-Resistive|||-|2.0|7|μs| |td(OFF)L|Current Turn-Off DelayTime-Inductive|VCE= 300V, L = 1mH,
VGE= 5V, RG= 1KΩ
ICE=6.5A, TJ= 25oC,||-|5.3|15|μs| |tfL|Current Fall Time-Inductive|||-|2.3|15|μs| |**Thermal Characteristics**|||||||| |RθJC
|Thermal Resistance Junction to Case|||-|-|0.9|oC/W| @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 www.fairchildsemi.com **3** ## **Typical Performance Curves** **==> picture [423 x 389] intentionally omitted <==** **----- Start of picture text -----**
100 30
RG = 1K Ω , VGE = 5V, VCE = 100V RG = 1K Ω , VGE = 5V, VCE = 100V
T J = 25 [o] C
20
10 TJ = 25 [o] C
T J = 150 [o] C
10
TJ = 150 [o] C
SCIS Curves valid for Vclamp Voltages of <430V SCIS Curves valid for Vclamp Voltages of <430V
1 0
10 100 1000 0 3 6 9 12 15
tCLP, TIME IN CLAMP ( μ S) L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching Figure 2. Self Clamped Inductive Switching
Current vs. Time in Clamp Current vs. Inductance
1.20 1.50
VGE = 3.7V ICE = 6A 1.45 ICE = 10ACE = 10A = 10A
1.15 V GE = 4.0V 1.40 VGE = 4.0VGE = 4.0V = 4.0V
1.35 VGE = 3.7VGE = 3.7V = 3.7V
1.10 1.30
VGE = 8V 1.25
1.05 VGE = 5V 1.20 VGE = 5VGE = 5V = 5V VGE = 4.5VGE = 4.5V = 4.5V
VGE = 4.5V 1.15 VGE = 8VGE = 8V = 8V
1.00 1.10
-75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERTURE ( [o] C) TJ, JUNCTION TEMPERTURE (J, JUNCTION TEMPERTURE (, JUNCTION TEMPERTURE (( [[o]] C))
Figure 3. Collector to Emitter On-State Voltage Figure 4. Collector to Emitter On-State Voltage Collector to Emitter On-State Voltage
vs. Junction Temperature vs. Junction Temperature
, INDUCTIVE SWITCHING CURRENT (A) , INDUCTIVE SWITCHING CURRENT (A)
ISCIS ISCIS
COLLECTOR TO EMITTER VOLTAGE (V) COLLECTOR TO EMITTER VOLTAGE (V)
, ,
CE CE
V V
**----- End of picture text -----**
**==> picture [195 x 160] intentionally omitted <==** **----- Start of picture text -----**
1.50
ICE = 10ACE = 10A = 10A
1.45
1.40 VGE = 4.0VGE = 4.0V = 4.0V
VGE = 3.7VGE = 3.7V = 3.7V
1.35
1.30
1.25
VGE = 5VGE = 5V = 5V VGE = 4.5VGE = 4.5V = 4.5V
1.20
VGE = 8VGE = 8V = 8V
1.15
1.10
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERTURE (J, JUNCTION TEMPERTURE (, JUNCTION TEMPERTURE (( [[o]] C))
COLLECTOR TO EMITTER VOLTAGE (V)
,
CE
V
**----- End of picture text -----**
**Figure 4. Collector to Emitter On-State Voltage Collector to Emitter On-State Voltage vs. Junction Temperature** **==> picture [423 x 195] intentionally omitted <==** **----- Start of picture text -----**
30 30
VGE = 8.0V VGE = 8.0V
VGE = 5.0V VGE = 5.0V
VGE = 4.5V VGE = 4.5V
20 VGE = 4.0V 20 VGE = 4.0V
VGE = 3.7V VGE = 3.7V
10 10
TJ = -40oC TJ = 25oC
0 0
0 1 2 3 4 0 1 2 3 4
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage
vs. Collector Current vs. Collector Current
, COLLECTOR TO EMITTER CURRENT (A) , COLLECTOR TO EMITTER CURRENT (A)
ICE ICE
**----- End of picture text -----**
**Figure 6. Collector to Emitter On-State Voltage vs. Collector Current** @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 www.fairchildsemi.com **4** **Typical Performance Curves**[(Continued)] **==> picture [432 x 590] intentionally omitted <==** **----- Start of picture text -----**
30 30
VGE = 8.0V PULSE DURATION = 80 μ s
VGE = 5.0V DUTY CYCLE = 0.5% MAX
VGE = 4.5V VCE = 5V
20 VGE = 4.0V 20
VGE = 3.7V
10 10 TJ = 175 [o] C
TJ = 25 [o] C
TJ = 175oC TJ = -40 [o] C
0 0
0 1 2 3 4 1 2 3 4
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage Figure 8. Transfer Characteristics
vs. Collector Current
30 2.0
VGE = 4.0V VCE = VGE
ICE = 1mA
1.8
20
1.6
1.4
10
1.2
0 1.0
25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC) TJ, JUNCTION TEMPERATURE( [o] C)
Figure 9. DC Collector Current vs. Case Figure 10. Threshold Voltage vs. Junction
Temperature Temperature
10000 12
ICE = 6.5A, VGE = 5V, RG = 1K Ω Resistive tOFF
1000 V ECS = 24V 10
8
100 Inductive tOFF
6
10
VCES = 300V 4
1
2
VCES = 250V Resistive tON
0.1 0
-50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ( [o] C) TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 11. Leakage Current vs. Junction Figure 12. Switching Time vs. Junction
Temperature Temperature
, COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)ICE
, THRESHOLD VOLTAGE (V)
TH
, DC COLLECTOR CURRENT (A) V
ICE
A) S)
( μ ( μ
LEAKAGE CURRENT SWITCHING TIME
**----- End of picture text -----**
@2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 www.fairchildsemi.com **5** **==> picture [433 x 591] intentionally omitted <==** **----- Start of picture text -----**
Typical Performance Curves [(Continued)]
2000 10
f = 1MHz ICE = 10A, TJ = 25 [o] C
VGE = 0V
1600 8
VCE = 6V
CIES
1200 6
VCE = 12V
800 4
400 CRES COES 2
0 0
5 10 15 20 25 0 10 20 30 40 50 60 70
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE(nC)
Figure 13. Capacitance vs. Collector to Emitter Figure 14. Gate Charge
Voltage
440
ICER = 10mA
420
TJ = -40 [o] C
TJ = 25 [o] C
400
TJ = 175 [o] C
380
10 100 1000 6000
RG, SERIES GATE RESISTANCE ( Ω )
Figure 15. Break down Voltage vs. Series Gate Resistance
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.2
0.1 PDM
0.1 0.05
0.02 t1
t2
NOTES:
0.01 DUTY FACTOR: D = t 1 /t 2
SINGLE PULSE PEAK TJ = PDM x Z θ JC x R θ JC + TC
0.01
10-5 10-4 10-3 10-2 10-1 1
t, RECTANGULAR PULSE DURATION(s)
CAPACITANCE (pF)
, GATE TO EMITTER VOLTAGE(V)
GS
V
, BREAKDOWN VOLTAGE (V)
CER
BV
IMPEDANCE, ZJC θ
NORMALIZED THERMAL
**----- End of picture text -----**
**Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case** @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 www.fairchildsemi.com **6** ## **Test Circuit and Waveforms** **==> picture [398 x 123] intentionally omitted <==** **----- Start of picture text -----**
L
VCC R
or LOAD
L
C
C
PULSEGEN RG G DUT RG = 1K Ω G DUT + VCC
5V -
E
E
**----- End of picture text -----**
**Figure 17. Inductive Switching Test Circuit** **Figure 18. tON and tOFF Switching Test Circuit** **==> picture [421 x 139] intentionally omitted <==** **----- Start of picture text -----**
VCE BVCES
tP
L VCE
ISCIS
VARY tP TO OBTAIN C + VCC
REQUIRED PEAK ISCIS RG G VCC
VGE DUT -
E
tP
0V ISCIS 0
0.01 Ω
tAV
**----- End of picture text -----**
**Figure 19. Energy Test Circuit** **Figure 20. Energy Waveforms** @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 www.fairchildsemi.com **7** ## **TRADEMARKS** The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. |AccuPower™
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