# IGBT, 40 A, 1.8 V, 165 W, 600 V, TO-220, 3 Pins ![Product image](https://novapart.co/image/farnell:2825137/) **URL**: https://novapart.co/products/FGP20N60UFDTU/igbt-40-a-18-v-165-w-600-to-220-3-pins **SKU**: FGP20N60UFDTU **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €1.8600 **Stock**: 500+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 165W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-220 | | Operating Temperature Max | 150°C | | Continuous Collector Current | 40A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 1.8V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2825137/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [50 x 8] intentionally omitted <==** **----- Start of picture text -----**
March 2015
**----- End of picture text -----**
## **FGP20N60UFD 600 V, 20 A Field Stop IGBT** ## **Features** - High Current Capability - Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A - High Input Impedance - Fast Switching ## **General Description** Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. - RoHS Compliant ## **Applications** - Solar Inverter, UPS, Welder, PFC |**TO-220**
**G C E**
7||**G**
**E**
**C**
4|| |---|---|---|---| |**Absolute Maximum Ratings**|||| |**Symbol**
**Description**||**Ratings**|**Unit**| |VCES
Collector to Emitter Voltage||600|V| |VGES
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage||±20
±30|V| |IC
Collector Current|@ TC= 25oC|40|A| |Collector Current|@ TC= 100oC|20|A| |ICM (1)
Pulsed Collector Current @ T|Pulsed Collector Current @ TC= 25oC|60|A| |PD
Maximum Power Dissipation|@ TC= 25oC|165|W| |Maximum Power Dissipation|@ TC= 100oC|66|W| |TJ
Operating Junction Temperature||-55 to +150|oC| |Tstg
Storage Temperature Range||-55 to +150|oC| |TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds||300|oC| ## **Absolute Maximum Ratings** **Notes:** 1: Repetitive rating: Pulse width limited by max. junction temperature **Thermal Characteristics** **Symbol Parameter Typ. Max. Unit** R θ JC(IGBT) Thermal Resistance, Junction to Case - 0.76 oC / W R θ JC(Diode) Thermal Resistance, Junction to Case - 2.51 oC / W ~~===~~ R θ JA Thermal Resistance, Junction to Ambient - 62.5 oC / W ©2011 Fairchild Semiconductor Corporation **1** FGP20N60UFD Rev. 1.4 www.fairchildsemi.com ## **Package Marking and Ordering Information** |**Symbol**
~~a~~
~~Lc~~|**Parameter**
~~aa~~
~~Lc~~
~~lel~~|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |**Off Characteristics**
~~Lc~~
~~lel~~
~~o—Eelllsi~~||||||| |BVCES
~~Lc~~
~~o—Eelllsi~~|Collector to Emitter Breakdown Voltage V
~~Lc~~
~~lel~~
~~o—Eelllsi~~|Collector to Emitter Breakdown Voltage VGE= 0V, IC= 250μA
~~o—Eelllsi~~|600
~~o—Eelllsi~~|-
~~o—Eelllsi~~|-
~~o—Eelllsi~~|V
~~o—Eelllsi~~| |ΔBVCES
/ ΔTJ|Temperature Coefficient of Breakdown
Voltage|VGE= 0 V, IC= 250μA|-|0.6|-|V/oC| |ICES
~~2~~|Collector Cut-Off Current
~~eee~~|VCE= VCES, VGE= 0 V,
TC= 25oC
~~eee~~|-
~~eee~~|-
~~eee~~|250
~~eee~~|μA
~~eee~~| |||VCE= VCES, VGE= 0 V,
TC= 125oC
~~eee~~|-
~~eee~~|-
~~eee~~|1
~~eee~~|mA
~~eee~~| |IGES
~~2~~
~~C—O~~|G-E Leakage Current
~~eee~~
~~C—O~~|VGE= VGES, VCE= 0V
~~eee~~
~~lO~~|-
~~eee~~
~~lO~~|-
~~eee~~
~~lO~~|±400
~~eee~~|nA
~~eee~~
~~CC~~| |**On Characteristics**
~~C—O~~
~~lO~~
~~CC~~||||||| |VGE(th)
~~C—O~~|G-E Threshold Voltage
~~C—O~~|IC= 250μA, VCE= VGE
~~lO~~
~~ee~~|4.0
~~lO~~
~~ee~~|5.0
~~lO~~
~~ee~~|6.5
~~ee~~|V
~~CC~~
~~ee~~| |VCE(sat)
~~ee~~|Collector to Emitter Saturation Voltage
~~ee~~|IC= 20 A,VGE= 15 V
~~ee~~
~~ee~~|-
~~ee~~
~~ee~~|1.8
~~ee~~
~~ee~~|2.4
~~ee~~
~~ee~~|V
~~ee~~
~~ee~~| |||IC= 20 A,VGE= 15 V,
TC= 125oC
~~ee~~
~~ee~~|-
~~ee~~
~~ee~~|2.0
~~ee~~
~~ee~~|-
~~ee~~
~~ee~~|V
~~ee~~
~~ee~~| |**Dynamic Characteristics**
~~ee ee~~||||||| |Cies
~~i~~|Input Capacitance
~~i~~|VCE= 30 V,VGE= 0 V,
f = 1 MHz
~~i~~|-
~~i~~|940
~~i~~|-
~~i~~|pF
~~i~~| |Coes
~~i~~|Output Capacitance
~~i~~||-
~~i~~|110
~~i~~|-
~~i~~|pF
~~i~~| |Cres
~~i~~|Reverse Transfer Capacitance
~~i~~||-
~~i~~|40
~~i~~|-
~~i~~|pF
~~i~~| |**Switching Characteristics**||||||| |td(on)|Turn-On Delay Time|VCC= 400 V, IC= 20 A,
RG= 10Ω, VGE= 15 V,
Inductive Load, TC= 25oC|-|13|-|ns| |tr|Rise Time||-|17|-|ns| |td(off)|Turn-Off Delay Time||-|87|-|ns| |tf|Fall Time||-|32|64|ns| |Eon|Turn-On Switching Loss||-|0.38|-|mJ| |Eoff|Turn-Off Switching Loss||-|0.26|-|mJ| |Ets|Total Switching Loss||-|0.64|-|mJ| |td(on)|Turn-On Delay Time|VCC= 400 V, IC= 20 A,
RG= 10Ω, VGE= 15 V,
Inductive Load, TC= 125oC|-|13|-|ns| |tr|Rise Time||-|16|-|ns| |td(off)|Turn-Off Delay Time||-|92|-|ns| |tf|Fall Time||-|63|-|ns| |Eon|Turn-On Switching Loss||-|0.41|-|mJ| |Eoff|Turn-Off Switching Loss||-|0.36|-|mJ| |Ets|Total Switching Loss||-|0.77|-|mJ| |Qg
~~——————~~|Total Gate Charge
~~——————~~|VCE= 400 V, IC= 20 A,
VGE= 15 V
~~——————~~|-
~~——————~~|63
~~——————~~|-
~~——————~~|nC
~~——————~~| |Qge
~~——————~~|Gate to Emitter Charge
~~——————~~||-
~~——————~~|7
~~——————~~|-
~~——————~~|nC
~~——————~~| |Qgc
~~——————~~|Gate to Collector Charge
~~——————~~||-
~~——————~~|32
~~——————~~|-
~~——————~~|nC
~~——————~~| **2** ©2011 Fairchild Semiconductor Corporation FGP20N60UFD Rev. 1.4 www.fairchildsemi.com **Electrical Characteristics of the Diode** TC = 25°C unless otherwise noted **==> picture [460 x 95] intentionally omitted <==** **----- Start of picture text -----**
||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---| |Symbol|Parameter|Test Conditions|Min.|Typ.|Max|Unit| |VFM|Diode Forward Voltage|IF = 10 A|TC = 25|[o]|C|-|1.9|2.5|V| |TC = 125|[o]|C|-|1.7|-| |trr|Diode Reverse Recovery Time|TC = 25|[o]|C|-|35|-|ns| |IF = 10 A,|TC = 125|[o]|C|-|57|-| |Qrr|Diode Reverse Recovery Charge|dIF/dt = 200 A/|μ|s|TC = 25|[o]|C|-|41|-|nC| |TC = 125|[o]|C|-|96|-| **----- End of picture text -----**
**3** ©2011 Fairchild Semiconductor Corporation FGP20N60UFD Rev. 1.4 www.fairchildsemi.com ## **Typical Performance Characteristics** **Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics** **==> picture [422 x 587] intentionally omitted <==** **----- Start of picture text -----**
60 60
TC = 25oC 20V 12V TC = 125oC 20V 12V
15V 15V 10V
10V
40 40
20 FA 20 WE VGE = 8V
VGE = 8V
0 0
0.0 1.5 3.0 4.5 6.0 0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
60 60
Common Emitter Common Emitter
VGE = 15V VCE = 20V
TC = 25oC TC = 25 o C
TC = 125oC TC = 125oC
40 ane 40
20 PTE) 20 LEE
0 0
0 1 2 3 4 4 6 8 10 12
PYE Collector-Emitter Voltage, V tT CE [V] } LA Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE GE
Temperature at Variant Current Level
3.2 20
Common Emitter Common Emitter
2.8 V GE = 15V TC = -40 o C
16
Lt | | 40A ae
2.4
ao EE
12
2.0
20A
8
1.6
40A
1.2 IC = 10A 4 20A
IC = 10A
0.8 po 0 Le
25 50 75 100 125 0 4 8 12 16 20
Collector-EmitterCase Temperature, TC [ [o] C] Gate-Emitter Voltage, VGE [V]
[A] [A]
C C
Collector Current, I Collector Current, I
[A]
[A] C
C Collector Current, I
Collector Current, I
[V]
[V] CE
CE V
,
Collector-Emitter Voltage
Collector-Emitter Voltage, V
**----- End of picture text -----**
**Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics Characteristics** **Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE GE Temperature at Variant Current Level** **4** ©2011 Fairchild Semiconductor Corporation FGP20N60UFD Rev. 1.4 www.fairchildsemi.com **==> picture [505 x 641] intentionally omitted <==** **----- Start of picture text -----**
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
TC = 25 o C TC = 125 o C
16128 TroonSeesSAP)| See ee 16128 eee|
40A 20A
4 4 40A
ines 20A ames ee eesre|
IC = 10A I C = 10A
0 eee 0 —
0 4 8 12 16 20 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
2500 15
Common Emitter Common Emitter
V GE = 0V, f = 1MHz TC = 25 o C
2000 TC = 25 o C 12
“—I-T| Cow 300V
1500 C ies 9 VCC = 100V 200V
1000 6
Coes
500 SY Cres 3 FS
0 SSS 0 0
0.1 1 10 30 0 20 40 60 80
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
100 100
10 μ s
10 100 μ s
1ms
10 ms
1 Sais Seti San DC tr :
Common Emitter
Single Nonrepetitive td(on) VCC = 400V, VGE = 15V
0.1 Pulse TC = 25 [o] C 10 IC = 20A
Curves must be derated T C = 25 o C
linearl in temperature y with increase TC = 125 o C
0.01 He 5 Pf} [2 |
1 10 100 1000 0 10 20 30 40 50 60
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [ Ω ]
[V]
CE [V]
V, CE
Collector-Emitter Voltage Collector-Emitter Voltage, V
FGP20N60UFD — 600 V, 20 A Field Stop IGBT
[V]
GE
Capacitance [pF] Gate-Emitter Voltage, V
Collector Current, I [A]c Switching Time [ns]
**----- End of picture text -----**
**5** ©2011 Fairchild Semiconductor Corporation FGP20N60UFD Rev. 1.4 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [435 x 618] intentionally omitted <==** **----- Start of picture text -----**
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
1000 200
Common Emitter Common Emitter
V CC = 400V, V GE = 15V VGE = 15V, RG = 10 Ω
IC = 20A 100 TC = 25oC
T C = 25 o C T C = 125oC
T C = 125 o C t d(off)
100 tr
itt
t f 10 td(on)
10 AS) 3 Lt
0 10 20 30 40 50 60 0 10 20 30 40
Gate Resistance, RG [ Ω ] Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
300 3
Common Emitter Common Emitter
V GE = 15V, R G = 10 Ω V CC = 400V, V GE = 15V
TC = 25oC IC = 20A
TC = 125oC 1 TC = 25oC
100 td(off) T C = 125 o C E on
t f E off
10 P| 0.1 EER
0 10 20 30 40 0 10 20 30 40 50 60
Collector Current, IC [A] Gate Resistance, RG [ Ω ]
Figure17. Switching Loss vs. Figure18. Turn off Switching
Collector Current SOA Characteristics
10 100
Common Emitter
VGE = 15V, RG = 10 Ω
T C = 25oC
TC = 125oC Eon
1
10
Eoff
0.1 Le
Safe Operating Area
VGE = 15V, TC = 125oC
0.02 1
0 10 20 30 40 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]
Switching Time [ns] Switching Time [ns]
Switching Time [ns] Switching Loss [mJ]
[A]
C
Switching Loss [mJ]
Collector Current, I
**----- End of picture text -----**
**6** ©2011 Fairchild Semiconductor Corporation FGP20N60UFD Rev. 1.4 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [437 x 572] intentionally omitted <==** **----- Start of picture text -----**
Figure 19. Forward Characteristics Figure 20. Reverse Current
40 100
TJ = 125 o C
10 T J = 75oC 10 TC = 125 [o] C
TJ = 25oC 1
TC = 75 [o] C
0.1
1 a /eae7 E-a S uuSoocgagae s aPPSGlEsemmlba ne
TC = 25 [o] C 0.01 T C = 25 [o] C
T C = 75 [o] C
TC = 125 [o] C
0.1 fooFil 1E-3 ESGeter
0 1 2 3 4 0 100 200 300 400 500 600
Forward Voltage, VF [V] Reverse Voltage, VR [V]
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
0.05 60
200A/ μ s 50
0.04
CEE | EEFEEFEE di/dt = 100A/ μ s
40
0.03 di/dt = 100A/ μ s
30 200A/ μ s
0.02
a 20 A
0.01 10
0 CeREEErE 5 10 15 20 | 0 EBREERRE 5 10 15 20
Forward Current, IF [A] Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1 0.1
0.05
SS cena Blt
0.02
0.01
0.01 single pulse P DM
t1
Duty Factor, D = t1/t2 t 2
[Peak T] [j] [ = Pdm x Zthjc + T] C
1E-3 das tte inn
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]
A]
μ
Forward Current, I [A]F Reverse Current , I [R
[nC]
rr [ns]
rr
Stored Recovery Charge, Q Reverse Recovery Time, t
Thermal Response [Zthjc]
**----- End of picture text -----**
**7** ©2011 Fairchild Semiconductor Corporation FGP20N60UFD Rev. 1.4 www.fairchildsemi.com **==> picture [592 x 749] intentionally omitted <==** **----- Start of picture text -----**
SUPPLIER "B" PACKAGE
SHAPE �����
3.50
10.67
SUPPLIER "A" PACKAGE 9.65 E
SHAPE
3.40
2.50
16.30
IF PRESENT, SEE NOTE "D" 13.90
E
16.51 9.40
15.42
8.13 E
1 2 3
[2.46] C 2.704.10
14.04
2.13 12.70
2.06
FRONT VIEWS
4.70 1.62 1.62
4.00 1.42 [ H] 2.67 1.10
2.40
"A1" 8.65 1.00
SEE NOTE "F" 7.59 0.55
�� ��
OPTIONAL 6.69 �� ��
6.06
CHAMFER
E
14.30
11.50
NOTE "I" BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
3 2 1 D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36 2.85 BACK VIEW
2.10
SIDE VIEW
**----- End of picture text -----**
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