# IGBT, 70 A, 1.68 V, 368 W, 1.2 kV, TO-264, 3 Pins ![Product image](https://novapart.co/image/farnell:3615793/) **URL**: https://novapart.co/products/FGL35N120FTDTU./igbt-70-a-168-v-368-w-12-kv-to-264-3-pins **SKU**: FGL35N120FTDTU. **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €3.9000 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 368W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-264 | | Operating Temperature Max | 150°C | | Continuous Collector Current | 70A | | Collector Emitter Voltage Max | 1.2kV | | Collector Emitter Saturation Voltage | 1.68V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3615793/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [68 x 8] intentionally omitted <==** **----- Start of picture text -----**
November 2013
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## **FGL35N120FTD 1200 V, 35 A Field Stop Trench IGBT** ## **Features** - Field Stop Trench Technology - High Speed Switching - Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35 A ## **General Description** Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications. - High Input Impedance ## **Applications** - Solar Inverter, UPS, Welder, PFC **==> picture [275 x 85] intentionally omitted <==** **----- Start of picture text -----**
C
G
TO-264 3L
G C E
E
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## **Absolute Maximum Ratings** **==> picture [530 x 215] intentionally omitted <==** **----- Start of picture text -----**
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 1200 V
—————| VGES Gate to Emitter Voltage  25 V
Collector Current @ TC = 25 [o] C 70 A
IC Collector Current @ TC = 100 [o] C 35 A
ICM (1) Pulsed Collector Current @ TC = 25 [o] C 105 A
Diode Continuous Forward Current @ TC = 25 [o] C 80 A
IF Diode Continuous Forward Current @ TC = 100 [o] C 40 A
PD EE Maximum Power Dissipation @ TC = 25 [o] C 368 W
—a Maximum Power Dissipation @ TC = 100 [o] C 147 laa W
a TJ Operating Junction Temperature -55 to +150 oC
Tstg Storage Temperature Range -55 to +150 | oC |
i TL Maximum Lead Temp. for solderingPurposes, 1/8” from case for 5 seconds |daira 300 oC
Notes:
**----- End of picture text -----**
- 1: Repetitive rating: Pulse width limited by max. junction temperature ## **Thermal Characteristics** |**Symbol**|**Parameter**|**Max.**|**Unit**| |---|---|---|---| |RJC(IGBT)|Thermal Resistance, Junction to Case|0.34|oC/W| |RJC(Diode)|Thermal Resistance, Junction to Case|0.9|oC/W| |RJA|Thermal Resistance, Junction to Ambient|25|oC/W| **1** ©2010 Fairchild Semiconductor Corporation FGL35N120FTD Rev. C1 www.fairchildsemi.com ## **Package Marking and Ordering Information** |**Symbol**
~~es~~|**Parameter**
~~rs~~|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |**Off Characteristics**
~~es~~
~~rs~~||||||| |BVCES|Collector to Emitter Breakdown Voltage V|Collector to Emitter Breakdown Voltage VGE= 0 V, IC= 250A|1200|-|-|V| |ICES
~~—~~|Collector Cut-Off Current
~~a~~|VCE= VCES, VGE= 0 V
~~a~~|-
~~a~~|-
~~a~~|1
~~a~~|mA
~~a~~| |IGES
~~—~~|G-E Leakage Current
~~a~~|VGE= VGES, VCE= 0 V
~~a~~|-
~~a~~|-
~~a~~|±250
~~a~~|nA
~~a~~| |**On Characteristics**
~~—a~~||||||| |VGE(th)|G-E Threshold Voltage|IC= 35 mA, VCE= VGE
~~eee~~|3.5
~~eee~~|6.2|7.5|V| |VCE(sat)
~~es~~|Collector to Emitter Saturation Voltage
~~es~~|IC= 35 A,VGE= 15 V
~~es~~
~~eee~~|-
~~es~~
~~eee~~|1.68
~~es~~|2.2
~~es~~|V
~~es~~| |||IC= 35 A,VGE= 15 V,
TC= 125oC
~~es~~
~~eee~~|-
~~es~~
~~eee~~|2.0
~~es~~|-
~~es~~|V
~~es~~| |**Dynamic Characteristics**
~~es~~
~~eee~~||||||| |Cies
~~=~~|Input Capacitance
~~ao~~|VCE= 30 V,VGE= 0 V,
f = 1 MHz
~~ao~~|-
~~ao~~|5090
~~ao~~|-
~~ao~~|pF
~~ao~~| |Coes
~~=~~|Output Capacitance
~~ao~~||-
~~ao~~|180
~~ao~~|-
~~ao~~|pF
~~ao~~| |Cres
~~=~~|Reverse Transfer Capacitance
~~ao~~||-
~~ao~~|95
~~ao~~|-
~~ao~~|pF
~~ao~~| |**Switching Characteristics**
~~=ao~~||||||| |td(on)|Turn-On Delay Time|VCC= 600 V, IC= 35 A,
RG= 10, VGE= 15 V,
Inductive Load, TC= 25oC|-|34|-|ns| |tr|Rise Time||-|63|-|ns| |td(off)|Turn-Off Delay Time||-|172|-|ns| |tf|Fall Time||-|107|-|ns| |Eon|Turn-On Switching Loss||-|2.5|-|mJ| |Eoff|Turn-Off Switching Loss||-|1.7|-|mJ| |Ets|Total Switching Loss||-|4.2|-|mJ| |td(on)|Turn-On Delay Time|VCC= 600 V, IC= 35 A,
RG= 10, VGE= 15 V,
Inductive Load, TC= 125oC|-|33|-|ns| |tr|Rise Time||-|66|-|ns| |td(off)|Turn-Off Delay Time||-|180|-|ns| |tf|Fall Time||-|146|-|ns| |Eon|Turn-On Switching Loss||-|3.1|-|mJ| |Eoff|Turn-Off Switching Loss||-|2.1|-|mJ| |Ets|Total Switching Loss||-|5.2|-|mJ| |Qg|Total Gate Charge|VCE= 600 V, IC= 35 A,
VGE= 15 V|-|210|-|nC| |Qge|Gate to Emitter Charge||-|42|-|nC| |Qgc|Gate to Collector Charge||-|101|-|nC| **2** ©2010 Fairchild Semiconductor Corporation FGL35N120FTD Rev. C1 www.fairchildsemi.com |**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |VFM|Diode Forward Voltage|IF= 35 A|TC= 25oC|-|2.7|3.4|V| ||||TC= 125oC|-|2.5|-|| |trr|Diode Reverse Recovery Time|IF= 35 A,
diF/dt = 200 A/s|TC= 25oC|-|337|-|ns| ||||TC= 125oC|-|520|-|| |Irr|Diode Peak Reverse Recovery
Current||TC= 25oC|-|7.6|-|A| ||||TC= 125oC|-|12.9|-|| |Qrr|Diode Reverse Recovery Charge||TC= 25oC|-|1292|-|nC| ||||TC= 125oC|-|3377|-|| **3** ©2010 Fairchild Semiconductor Corporation FGL35N120FTD Rev. C1 www.fairchildsemi.com ## **Typical Performance Characteristics** **Figure 1. Typical Output Characteristics** **Figure 2. Typical Output Characteristics** **==> picture [437 x 588] intentionally omitted <==** **----- Start of picture text -----**
180 180
TC = 25oC 20V 17V TC = 125oC 20V 17V
150 15V 150 15V
Ss) fe 12V —| 12V
120 pe 120 fe |
90 90
oo) Ae faan ee
10V 10V
60 60
9V
9V
30 30
VGE = 8V
VGE = 8V
0 0
0 2 4 6 8 0 2 4 6 8
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
120 120
Common Emitter Common Emitter
100 PF VTCGE = 25 = 15VoC ELAS 100 | VTCCE = 25 = 20V o LA C
o
80 | TC = 125oC 80 | TC = 125 C eee
60 60
PT At P| fy
40 40
20 POA 20 FA
0 0
0 pot 1 2 3 4 4 pe 6 8 | 10 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
2.8 20
Common Emitter Common Emitter
2.6 VGE = 15V 70A TC = 25 o C
Es Fc
16
2.4
2.2
12
2.0 ea TT
35A
1.8 eee 8 70A ee
1.6 35A
I C = 18A 4
1.4 ee FL
IC = 18A
1.2 0
25 SE 50 75 100 125 4 Oe 8 12 16 20
Case Temperature, TC [ [o] C ] Gate-Emitter Voltage, VGE [V]
[A] [A]
C C
Collector Current, I Collector Current, I
[A]
[A] C
C Collector Current, I
Collector Current, I
[V] [V]
CE CE
V
,
Collector-Emitter Voltage, V Collector-Emitter Voltage
**----- End of picture text -----**
**4** ©2010 Fairchild Semiconductor Corporation FGL35N120FTD Rev. C1 www.fairchildsemi.com ## **Typical Performance Characteristics** **Figure 7. Saturation Voltage vs. VGE** **Figure 8. Load Current vs. Frequency** **==> picture [446 x 576] intentionally omitted <==** **----- Start of picture text -----**
20 150
Common Emitter VCC = 600V
TC = 125 o C load Current : peak of square wave
16 ne 120
12 90
FEES @ ROA
8 60
PWEEEES 70A 9 Ri
35A
4 30 Duty cycle : 50%
T = 100oC
C
0 = IC = 18A 0 |RSS Power Dissipation = 147W
4 8 12 16 20 1 10 100 1000
Gate-Emitter Voltage, VGE [V]
Frequency, f [kHz]
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
8000 15
Common Emitter Common Emitter
Cies V TC GE = 25 = 0V, f = 1MHz oC 12 TC = 25 o C 600V
6000 VCC = 200V
400V
9
4000
6
Coes
2000 oe PRE
3
tt FEELS
Cres
0 PSS 0 FE
1 10 30 0 50 100 150 200 250
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
400 200
100
10  s
100
10 See « OLLE
100  s
t r
1ms
1
10 ms
Sen Common Emitter
*Notes: SS Gn DC Aes td(on) VCC = 600V, VGE = 15V
0.1 1. TC = 25 [o] C I T C C = 35A = 25oC
3. Single Pulse2. TJ = 150 [o] C T C = 125oC
0.01 PE 20 ili:
1 10 100 1000 4000 0 10 20 30 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [  ]
]
V
[
CE
[A]
C
, I
Current
Collector
Collector-Emitter Voltage, V
[V]
GE
Capacitance [pF] Gate-Emitter Voltage, V
Collector Current, I [A]c Switching Time [ns]
**----- End of picture text -----**
**Figure 9. Capacitance Characteristics** **Figure 11. SOA Characteristics** **5** ©2010 Fairchild Semiconductor Corporation FGL35N120FTD Rev. C1 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [468 x 617] intentionally omitted <==** **----- Start of picture text -----**
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
2000 200
Common Emitter
VCC = 600V, VGE = 15V
1000 IT C C= = 25 35AoC 100
T C = 125 o C t d(off) t r
Te. Ge
tf td(on) Common Emitter
V GE = 15V, R G = 10 
100 TC = 25oC
TC = 125oC
50 Be 10 Hf
0 10 20 30 40 50 10 20 30 40 50 60 70
Gate Resistance, RG [  ] Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs. Figure 16.Switching Loss vs. Gate Resistance
Collector Current
600 8
Common Emitter
VTCGE = 25 = 15V, RoC G = 10  E on
T C = 125oC
td(off)
Eoff
=
Common Emitter
1
V CC = 600V, V GE = 15V
100 i ins t f I T CC = 35A = 25 To oC
T C = 125 o C
50 aS 0.3
10 20 30 40 50 60 70 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG [  ]
Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching
SOA Characteristics
10 200
100
E on
Eoff 10
1 PaYETI g an|
Common Emitter
VGE = 15V, RG = 10 
T C = 25 o C Safe Operating Area
T C = 125 o C VGE = 15V, TC = 125oC
0.3 A] 1 ES
10 20 30 40 50 60 70 1 10 100 1000 3000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]
Switching Time [ns] Switching Time [ns]
Switching Time [ns] Switching Loss [mJ]
[A]
C
Switching Loss [mJ]
Collector Current, I
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**6** ©2010 Fairchild Semiconductor Corporation FGL35N120FTD Rev. C1 www.fairchildsemi.com ## **Typical Performance Characteristics** **Figure 19. Forward Characteristics Figure 20. Reverse Recovery Current** **==> picture [443 x 561] intentionally omitted <==** **----- Start of picture text -----**
50 8
7 di F /dt = 200A/  s
10
Ty TJ = 125oC 6 =
T J = 25oC 5
1
diF/dt = 100A/  s
4
TC = 25 [o] C
T C = 125 [o] C TC = 25 o C
0.2 ret)ey) | 3 es
0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 20 30 40
Forward Voltage, VF [V] Forward Current, IF [A]
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
1.4 600
500
1.2 di F /dt = 200A/  s = S| di F /dt = 100A/  s
400
1.0
fee 300 za diF/dt = 200A/  s
diF/dt = 100A/  s
0.8
200
peraee| Mecosee
TC = 25oC TC = 25 o C
0.6 fel 100 PES
10 20 30 40 10 20 30 40
Forward Current, IF [A] Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
SiS
0.5
0.1
0.2
0.1
0.05
0.01 0.02 aI PDM
De 0.01 a st t1 atl
single pulse t2
Duty Factor, D = t1/t2
[Peak T] [j] [ = Pdm x Zthjc + T] C
0.001 re
1E-5 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration [sec]
[A]
[A] rr
Forward Current, IF
Reverse Recovery Currnet, I
C]

[
rr [ns]
rr
Reverse Recovery Time, t
Stored Recovery Charge, Q
Thermal Response [Zthjc]
**----- End of picture text -----**
**7** ©2010 Fairchild Semiconductor Corporation FGL35N120FTD Rev. C1 www.fairchildsemi.com ## **Mechanical Dimensions** ## **Figure 24. TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA** _Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ _Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO264-003_ **8** ©2010 Fairchild Semiconductor Corporation FGL35N120FTD Rev. C1 www.fairchildsemi.com ## **TRADEMARKS** The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. **==> picture [434 x 196] intentionally omitted <==** **----- Start of picture text -----**
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|||| |---|---|---| |Datasheet Identification|Product Status|Definition| |Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications| |may change in any manner without notice.| |Datasheet contains preliminary data; supplementary data will be published at a later| |Preliminary|First Production|date. Fairchild Semiconductor reserves the right to make changes at any time without| |notice to improve design.| |No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to| |make changes at any time without notice to improve the design.| |Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild| |Semiconductor. The datasheet is for reference information only.| **----- End of picture text -----**
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