# IGBT, 80 A, 1.45 V, 375 W, 650 V, TO-247, 4 Pins
**URL**: https://novapart.co/products/FGHL75T65MQDTL4/igbt-80-a-145-v-375-w-650-to-247-4-pins
**SKU**: FGHL75T65MQDTL4
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.3500
**Stock**: 200+
**Lead Time**: 85 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Power Dissipation | 375W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.45V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3929770/)
**DATA SHEET www.onsemi.com** ~~—~~
## Field Stop Trench IGBT 650 V, 75 A
**75 A, 650 V VCESat = 1.45 V**
## FGHL75T65MQDTL4
Field stop 4[th] generation mid speed IGBT technology Full current rated copack Diode technology.
## **Features**
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co−efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 75 A
- 100% of the Parts are Tested for ILM (Note 2)
- Smooth and Optimized Switching
- Tight Parameter Distribution
- RoHS Compliant
## **Typical Applications**
**==> picture [161 x 193] intentionally omitted <==**
**----- Start of picture text -----**
C
E1: Kelvin Emitter
E2: Power Emitter
G
E1 E2
TO−247−4LD
CASE 340CJ
**----- End of picture text -----**
- Solar Inverter
- UPS, ESS
**MARKING DIAGRAM** • PFC, Converters **MAXIMUM RATINGS Rating Symbol Value Unit** FGHL75T65 Collector to Emitter Voltage VCES 650 V MQDTL4 Gate to Emitter Voltage VGES ± 20 V Transient Gate to Emitter Voltage ± 30 Collector Current (Note 1) @ TC = 25 ° C IC 80 A @ TC = 100 ° C 75 Pulsed Collector Current (Note 2) ILM 300 A Pulsed Collector Current (Note 3) ICM 300 A Diode Forward Current (Note 1) @ T @ TC =C = 25 100 ° C ° C IF 8075 A &Y&Z&3 = ON Semiconductor Logo= Assembly Plant Code= 3−Digit Date Code Pulsed Diode Maximum Forward Current IFM 300 A &K = 2−Digit Lot Traceability Code Maximum Power Dissipation @ TC = 25 ° C PD 375 W FGHL75T65MQDTL4 = Specific Device Code @ TC = 100 ° C 188 Operating Junction and Storage Temperature TJ, −55 to ° C **ORDERING INFORMATION** Range TSTG +175 Maximum Lead Temp. for Soldering TL 260 ° C **Device Package Shipping** Purposes (1/8 ″ from Case for 5 s) FGHL75T65MQDTL4 TO−247−4LD 30 Units / Tube Stresses exceeding those listed in the Maximum Ratings table may damage the ~~= ———~~ device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. VCC = 400 V, VGE = 15 V, IC = 300 A, Inductive Load, 100% tested
3. Repetitive rating: Pulse width limited by max. junction temperature
Publication Order Number: **FGHL75T65MQDTL4/D**
**1**
© Semiconductor Components Industries, LLC, 2020 **August, 2021 − Rev. 1**
**FGHL75T65MQDTL4**
## **THERMAL CHARACTERISTICS**
|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance Junction−to−case, for IGBT|R�JC|0.40|°C/W|
|Thermal Resistance Junction−to−case, for Diode|R�JC|0.60|°C/W|
|Thermal Resistance Junction−to−ambient|R�JA|40|°C/W|
## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted)
|**Parameter**|**Test Conditions**|**Test Conditions**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**|||||||||
|Collector−emitter Breakdown Voltage,
Gate−emitter Short−circuited|VGE= 0 V,
IC= 1 mA|||BVCES|650|−|−|V|
|Temperature Coefficient of Breakdown
Voltage|VGE= 0 V,
IC= 1 mA|||�BVCES
�TJ|−|0.6|−|V/°C|
|Collector−emitter Cut−off Current,
Gate−emitter Short−circuited|VGE= 0 V,
VCE= 650 V|||ICES|−|−|250|�A|
|Gate Leakage Current, Collector−emitter
Short−circuited|VGE= 20 V,
VCE= 0 V|||IGES|−|−|±400|nA|
|**ON CHARACTERISTICS**|||||||||
|Gate−emitter Threshold Voltage|VGE= VCE, IC= 75 mA|||VGE(th)|3.0|4.5|6.0|V|
|Collector−emitter Saturation Voltage|VGE= 15 V,
IC= 75 A,|TJ= 25°C||VCE(sat)|−|1.45|1.8|V|
|||TJ= 175°C|||−|1.65|−|V|
|**DYNAMIC CHARACTERISTICS**|||||||||
|Input Capacitance|VCE= 30 V,
VGE= 0 V,
f = 1 MHz|||Cies|−|4954|−|pF|
|Output Capacitance||||Coes|−|163|−||
|Reverse Transfer Capacitance||||Cres|−|14|−||
|Gate Charge Total|VCE= 400 V,
IC= 75 A,
VGE= 15 V|||Qg|−|149|−|nC|
|Gate−to−emitter Charge||||Qge|−|27|−||
|Gate−to−collector Charge||||Qgc|−|34|−||
|**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**|||||||||
|Turn−on Delay Time|TC= 25°C,
VCC= 400 V,
IC= 37.5 A,
RG= 10�,
VGE= 15 V,
Inductive Load|||td(on)|−|30|−|ns|
|Rise Time||||tr|−|16|−||
|Turn−off Delay Time||||td(off)|−|190|−||
|Fall Time||||tf|−|35|−||
|Turn−on Switching Loss||||Eon|−|0.6|−|mJ|
|Turn−off Switching Loss||||Eoff|−|0.5|−||
|Total Switching Loss||||Ets|−|1.1|−||
|Turn−on Delay Time|TC= 25°C,
VCC= 400 V,
IC= 75 A,
RG= 10�,
VGE= 15 V,
Inductive Load|||td(on)|−|32|−|ns|
|Rise Time||||tr|−|29|−||
|Turn−off Delay Time||||td(off)|−|181|−||
|Fall Time||||tf|−|32|−||
|Turn−on Switching Loss||||Eon|−|1.2|−|mJ|
|Turn−off Switching Loss||||Eoff|−|1.1|−||
|Total Switching Loss||||Ets|−|2.3|−||
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**2**
**FGHL75T65MQDTL4**
**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (continued)
|**Parameter**|**Test Conditions**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**||||||||
|Turn−on Delay Time|TC= 150°C,
VCC= 400 V,
IC= 37.5 A,
RG= 10�,
VGE= 15 V,
Inductive Load||td(on)|−|27|−|ns|
|Rise Time|||tr|−|19|−||
|Turn−off Delay Time|||td(off)|−|206|−||
|Fall Time|||tf|−|44|−||
|Turn−on Switching Loss|||Eon|−|1.9|−|mJ|
|Turn−off Switching Loss|||Eoff|−|1.8|−||
|TotaL Switching Loss|||Ets|−|1.8|−||
|Turn−on Delay Time|TC= 150°C,
VCC= 400 V,
IC= 75 A,
RG= 10�,
VGE= 15 V,
Inductive Load||td(on)|−|30|−|ns|
|Rise Time|||tr|−|32|−||
|Turn−off Delay Time|||td(off)|−|198|−||
|Fall Time|||tf|−|40|−||
|Turn−on Switching Loss|||Eon|−|2.0|−|mJ|
|Turn−off Switching Loss|||Eoff|−|1.4|−||
|Total Switching Loss|||Ets|−|3.4|−||
|**DIODE CHARACTERISTICS**||||||||
|Diode Forward Voltage|IF= 75 A|TJ= 25°C|VFM|−|1.65|2.1|V|
|||TJ= 175°C||−|1.55|−||
|**DIODE SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**||||||||
|Reverse Recovery Energy|TC= 25°C, VCE= 400 V, IF= 37.5 A,
dIF/dt = 1000 A/�s||EREC|−|105|−|�J|
|Diode Reverse Recovery Time|||Trr|−|58|−|ns|
|Diode Reverse Recovery Charge|||Qrr|−|591|−|nC|
|Reverse Recovery Energy|TC= 25°C, VCE= 400 V, IF= 75 A,
dIF/dt = 1000 A/�s||EREC|−|235|−|�J|
|Diode Reverse Recovery Time|||Trr|−|107|−|ns|
|Diode Reverse Recovery Charge|||Qrr|−|1113|−|nC|
|Reverse Recovery Energy|TC= 150°C, VCE= 400 V, IF= 37.5 A,
dIF/dt = 1000 A/�s||EREC|−|747|−|�J|
|Diode Reverse Recovery Time|||Trr|−|151|−|ns|
|Diode Reverse Recovery Charge|||Qrr|−|2780|−|nC|
|Reverse Recovery Energy|TC= 150°C, VCE= 400 V, IF= 75 A,
dIF/dt = 1000 A/�s||EREC|−|865|−|�J|
|Diode Reverse Recovery Time|||Trr|−|171|−|ns|
|Diode Reverse Recovery Charge|||Qrr|−|3286|−|nC|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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**3**
**FGHL75T65MQDTL4**
## **TYPICAL CHARACTERISTICS**
**==> picture [242 x 602] intentionally omitted <==**
**----- Start of picture text -----**
300
TC = 25 ° C 20 V
15 V
240 12 V
10 V
VGE = 8 V
180
120
60
0
0 1 2 3 4 5
VCE, Collector−Emitter Voltage (V)
Figure 1. Typical Output Characteristics
300
Common Emitter
V GE = 15 V
240 TC = 25 ° C
TC = 150 ° C
180
120
60
0
0 1 2 3 4 5
VCE, Collector−Emitter Voltage (V)
Figure 3. Typical Saturation Voltage
2.5
Common Emitter
VGE = 15 V
2.0
150 A
1.5
75 A
IC = 40 A
1.0
−100 −50 0 50 100 150 200
TC, Collector−Emitter Case Temperature ( ° C)
, Collector Current (A)
IC
, Collector Current (A)
IC
, Collector−Emitter Voltage (V)
CE
V
**----- End of picture text -----**
**Figure 5. Saturation Voltage vs. Case Temperature**
**==> picture [240 x 602] intentionally omitted <==**
**----- Start of picture text -----**
300
TC = 150 ° C 20 V
15 V
240 12 V
10 V
180
VGE = 8 V
120
60
0
0 1 2 3 4 5
VCE, Collector−Emitter Voltage (V)
Figure 2. Typical Output Characteristics
150
Common Emitter
VCE = 15 V
TC = 25 ° C
TC = 150 ° C
100
50
0
0 2 4 6 8 10
VGE, Gate−Emitter Voltage (V)
Figure 4. Typical Transfer Characteristics
10000
C ies
1000
100 C oes
10 Common Emitter C res
VGE = 0 V, f = 1 MHz
T C = 25 ° C
1
1 10 30
VCE, Collector−Emitter Voltage (V)
, Collector Current (A)
IC
, Collector Current (A)
IC
Capacitance (pF)
**----- End of picture text -----**
**Figure 6. Capacitance Characteristics**
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**4**
**FGHL75T65MQDTL4**
## **TYPICAL CHARACTERISTICS** (continued)
**==> picture [488 x 602] intentionally omitted <==**
**----- Start of picture text -----**
15 1000
Common EmitterTC = 25 ° C V CC = 200 V
12 100 DC 10 � s
300 V
100 � s
9 400 V 1 ms
10 ms
10
6
*Notes:
3 1 1. TC = 25 ° C
2. TJ = 175 ° C
3. Single Pulse
0 0,1
0 30 60 90 120 150 1 10 100 1000
Qg, Gate Charge (nC) VCE, Collector−Emitter Voltage (V)
Figure 7. Gate Charge Characteristics Figure 8. SOA Characteristics
200 1000
100 td(off) Common Emitter
td(on) V CC = 400 V, V GE = 15 V
IC = 75 A
TC = 25 ° C
100 TC = 150 ° C
tr
Common Emitter
tr V CC = 400 V, V GE = 15 V
IC = 75 A
TC = 25 ° C
TC = 150 ° C
10 10
0 10 20 30 40 50 0 10 20 30 40 50
Rg, Gate Resistance ( � ) Rg, Gate Resistance ( � )
Figure 9. Turn−On Characteristics vs. Gate Resistance Figure 10. Turn−Off Characteristics vs. Gate Resistance
200 500
Common Emitter
VCC = 400 V, VGE = 15 V
RG = 10 �
100 T C = 25 ° C
TC = 150 ° C t r td(off)
100
td(on) Common Emitter
tr R VCC G = 10 = 400 V, V � GE = 15 V
TC = 25 ° C
TC = 150 ° C
10 10
0 50 100 150 200 0 50 100 150 200
IC, Collector Current (A) IC, Collector Current (A)
, Collector Current (A)
, Gate−Emitter Voltage (V)GE IC
V
Switching Time (ns) Switching Time (ns)
Switching Time (ns) Switching Time (ns)
**----- End of picture text -----**
**Figure 11. Turn−On Characteristics vs. Collector Current**
**Figure 12. Turn−Off Characteristics vs. Collector Current**
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**5**
**FGHL75T65MQDTL4**
## **TYPICAL CHARACTERISTICS** (continued)
**==> picture [490 x 602] intentionally omitted <==**
**----- Start of picture text -----**
10 10
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 75 A
TC = 25 ° C Eon
TC = 150 ° C
Eon
1
Eoff
Common Emitter
V CC = 400 V, V GE = 15 V
RG = 10 �
Eoff T TCC = 25 = 150 ° C ° C
1 0,1
0 10 20 30 40 50 0 50 100 150 200
Rg, Gate Resistance ( � ) IC, Collector Current (A)
Figure 13. Switching Loss vs. Gate Resistance Figure 14. Switching Loss vs. Collector Current
300 60
Common Emitter TC = 25 ° C
250 TTCC = 25 = 150 ° C ° C 50 TC = 150 ° C
200 40
150 30
100 20
50 10
0 0
0 0.5 1 1.5 2 2.5 3 3.5 400 600 800 1000 1200 1400 1600
VF, Forward Voltage (V) diF/dt, Diode Current Slop (A/ � s)
Figure 15. Forward Characteristics Figure 16. Reverse Recovery Current
300 5
T C = 25 ° C TC = 25 ° C
250 TC = 150 ° C 4,5 TC = 150 ° C
4
3,5
200
3
150 2,5
2
100
1,5
1
50
0,5
0 0
400 600 800 1000 1200 1400 1600 400 600 800 1000 1200 1400 1600
diF/dt, Diode Current Slop (A/ � s) diF/dt, Diode Current Slop (A/ � s)
Switching Loss (mJ) Switching Loss (mJ)
, Forward Current (A)
IF
, Reverse Recovery Current (A)
Irr
C)
, Reverse Recovery Time (ns)trr , Reverse Recovery Charge ( � rr
Q
**----- End of picture text -----**
**Figure 17. Reverse Recovery Time**
**Figure 18. Stored Charge**
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**6**
**FGHL75T65MQDTL4**
## **TYPICAL CHARACTERISTICS** (continued)
**==> picture [473 x 506] intentionally omitted <==**
**----- Start of picture text -----**
1
0.5
0.2 PDM
0.1
0.1 t
1
0.05 t 2
0.02 Duty Factor, D = t1 / t2
0.01 Peak Tj = Pdm x Zthjc + Tc
0.01 R1 R2
0.001
Single Pulse C1 = t1 / R1 C2 = t2 / R2
i: 1 2 3 4
ri [K/W]: 0.00690 0.04226 0.11080 0.06875
� [s]: 1.741E−5 8.297E−5 3.073E−3 1.497E−2
0.0001
10 [−6] 10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]
Rectangular Pulse Duration (s)
Figure 19. Transient Thermal Impedance of IGBT
1
0.5
0.2 PDM
0.1
0.1
t
0.05 1
t
2
0.02
Duty Factor, D = t1 / t2
0.01 Peak Tj = Pdm x Zthjc + Tc
0.01
R1 R2
0.001 Single Pulse
C1 = t1 / R1 C2 = t2 / R2
i: 1 2 3 4
ri [K/W]: 0.00796 0.06415 0.14360 0.13740
� [s]: 1.002E−5 1.761E−4 3.348E−3 2.927E−2
0.0001
10 [−6] 10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]
Rectangular Pulse Duration (s)
Thermal Response (Zthjc)
Thermal Response (Zthjc)
**----- End of picture text -----**
**Figure 20. Transient Thermal Impedance of Diode**
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**7**
**FGHL75T65MQDTL4**
## **PACKAGE DIMENSIONS**
**TO−247−4LD** CASE 340CJ ISSUE A
**==> picture [492 x 489] intentionally omitted <==**
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**8**
**FGHL75T65MQDTL4**
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
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**9**
## Links
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