# IGBT, 100 A, 1.6 V, 268 W, 650 V, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:3018896/) **URL**: https://novapart.co/products/FGHL50T65SQ/igbt-100-a-16-v-268-w-650-to-247-3-pins **SKU**: FGHL50T65SQ **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €1.5200 **Stock**: 200+ **Lead Time**: 106 days (indicative) ## Description DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:268W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 268W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 175°C | | Continuous Collector Current | 100A | | Collector Emitter Voltage Max | 650V | | Collector Emitter Saturation Voltage | 1.6V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3018896/) ## FGHL50T65SQ ## IGBT for PFC Applications 650 V, 50 A, TO-247-3L ## **Features** - Maximum Junction Temperature: TJ = 175°C - Positive Temperature Co−efficient for Easy Parallel Operating - High Current Capability ## **www.onsemi.com** - Low Saturation Voltage: VCE(sat) =1.6 V (Typ.) @ IC = 50 A - 100% of the Parts Tested for ILM (Note 1) - High Input Impedance |**BVCES**|**VCE(sat) TYP**|**IC MAX**| |---|---|---| |650 V|1.6 V|200 A| - Fast Switching - Tighten Parameter Distribution - RoHS Compliant ## **Typical Applications** - Solar Inverter, UPS, Welder, Telecom, ESS, PFC **MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) |**MAXIMUM RATINGS**(TC = 25C = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TC = 25C = 25= 25°C unless otherwise noted)|C unless otherwise noted)||| |---|---|---|---|---| |**Parameter**||**Symbol**|**Value**|**Unit**| |Collector−to−Emitter Voltage||VCES|650|V| |Gate−to−Emitter Voltage||VGES|±20|V| |Transient Gate−to−Emitter Voltage||VGES|±30|V| |Collector Current|TC= 25°C|IC|100|A| ||TC= 100°C||50|| |Pulsed Collector Current (Note 2)|TC= 25°C|ICM|200|A| |Maximum Power Dissipation|TC= 25°C|PD|268|W| ||TC= 100°C||134|| |Operating Junction and Storage Temperature
Range||TJ, Tstg|−55 to
+175|°C| |Maximum Lead Temperature for Soldering
Purposes (1/8″from case for 5 s)||TL|260|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **==> picture [72 x 82] intentionally omitted <==** **----- Start of picture text -----**
C
G
E
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**TO−247 LONG LEADS CASE 340CX** ## **MARKING DIAGRAM** **==> picture [45 x 27] intentionally omitted <==** **----- Start of picture text -----**
$Y&Z&3&K
FGHL50T65
SQ
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1. VCC = 400 V, VGE = 15 V, IC = 200 A, Inductive Load 2. Repetitive rating: Pulse width limited by max. Junction temperature 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted **==> picture [182 x 49] intentionally omitted <==** **----- Start of picture text -----**
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = 3−Digit Date Code
&K = 2−Digit Lot Traceability Code
FGHL50T65SQ = Specific Device Code
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## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |FGHL50T65SQ|TO−247−3L|30 Units / Rail| Publication Order Number: **FGHL50T65SQ/D** **1** © Semiconductor Components Industries, LLC, 2018 **December, 2018 − Rev. 0** **FGHL50T65SQ** ## **Table 1. THERMAL RESISTANCE RATINGS** |**Table 1. THERMAL RESISTANCE RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Max**|**Unit**| |Junction−to−Case − Steady State|RθJC|0.56|°C/W| |Junction−to−Ambient − Steady State (Note 4)|RθJA|40|| |4. Repetitive rating: Pulse width limited by max. Junction temperature|||| |**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise stated)|||| |**Table 1. THERMAL RESISTANCE RATINGS**|**Table 1. THERMAL RESISTANCE RATINGS**|**Table 1. THERMAL RESISTANCE RATINGS**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|||**Symbol**|**Max**|||**Unit**| |Junction−to−Case − Steady State|||RθJC|0.56|||°C/W| |Junction−to−Ambient − Steady State (Note 4)|||RθJA|40|||| |4. Repetitive rating: Pulse width limited by max. Junction temperature
**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise stated)|||||||| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Collector to Emitter Breakdown Voltage|BVCES|VGE= 0 V, IC= 1 mA||650|||V| |Temperature Coefficient of Breakdown
Voltage|�VCES/�TJ|VGE= 0 V, IC= 1 mA|||0.6||V/°C| |Collector Cut−Off Current|ICES|VCE= VCES, VGE= 0 V||||250|�A| |G−E Leakage Current|IGES|VGE= VGES, VCE= 0 V||||±400|nA| |**ON CHARACTERISTICS**|||||||| |Gate Threshold Voltage|VGE(th)|VGE= VCE, IC= 50 mA||2.6|4.5|6.4|V| |Collector to Emitter Saturation Voltage|VCE(sat)|IC= 50 A, VGE= 15 V TC= 25°C|||1.6|2.1|V| |||IC= 50 A, VGE= 15 V TC= 175°C|||1.92||V| |**DYNAMIC CHARACTERISTIC**|||||||| |Input Capacitance|Cies|VCE= 30 V, VGE= 0 V, f = 1 MHz|||3209||pF| |Output Capacitance|Coes||||42||| |Reverse Transfer Capacitance|Cres||||12||| |**SWITCHING CHARACTERISTIC**|||||||| |Turn−On Delay Time|td(on)|VCC= 400 V, IC= 25 A,
RG= 4.7�, VGE= 15 V,
Inductive Load, TC= 25°C
FWD: FGH50T65SQD|||19||ns| |Rise Time|tr||||13||ns| |Turn−Off Delay Time|td(off)||||93||ns| |Fall Time|tf||||6.4||ns| |Turn−On Switching Loss|Eon||||410||�J| |Turn−Off Switching Loss|Eoff||||88||�J| |Total Switching Loss|Ets||||498||�J| |Turn−On Delay Time|td(on)|VCC= 400 V, IC= 25 A,
RG= 4.7�, VGE= 15 V,
Inductive Load, TC= 175°C
FWD: FGH50T65SQD|||18||ns| |Rise Time|tr||||15||ns| |Turn−Off Delay Time|td(off)||||102||ns| |Fall Time|tf||||8||ns| |Turn−On Switching Loss|Eon||||641||�J| |Turn−Off Switching Loss|Eoff||||203||�J| |Total Switching Loss|Ets||||844||�J| |Total Gate Charge|Qg|VCE= 400 V, IC= 50 A,
VGE= 15 V|||99||nC| |Gate−to−Emitter Charge|Qge||||17||nC| |Gate−to−Collector Charge|Qgc||||23||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **FGHL50T65SQ** ## **TYPICAL CHARACTERISTICS** **==> picture [191 x 376] intentionally omitted <==** **----- Start of picture text -----**
200
TC = 25oC 20V
15V
12V VGE [ = 8V]
10V
150
100
50
0
0 1 2 3 4 5
Collector−Emitter Voltage, VCE [V]
Figure 1. Typical Output Characteristics
200
Common Emitter
V GE = 15V
150 TTCC = 25 = 175oCoC
100
50
0
0 1 2 3 4 5
Collector−Emitter Voltage, VCE [V]
[A]
C
Collector Current, I
[A]
C
Collector Current, I
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**Figure 1. Typical Output Characteristics** **Figure 3. Typical Saturation Voltage Characteristics** **==> picture [183 x 165] intentionally omitted <==** **----- Start of picture text -----**
20
Common Emitter
TC = 25 o C
16
12
IC = 25A
8
50A
100A
4
0
4 8 12 16 20
Gate−Emitter Voltage, VGE [V]
[V]
CE
Collector−Emitter Voltage V,
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**Figure 5. Saturation Voltage vs. VGE** **==> picture [190 x 165] intentionally omitted <==** **----- Start of picture text -----**
200
TC = 175 oC 15V20V
12V
10V
150
V GE [ = 8V]
100
50
0
0 1 2 3 4 5
Collector−Emitter Voltage, VCE [V]
[A]
C
Collector Current, I
**----- End of picture text -----**
**Figure 2. Typical Output Characteristics** **==> picture [190 x 380] intentionally omitted <==** **----- Start of picture text -----**
3
Common Emitter
VGE [ = 15V]
100A
2
50A
IC = 25A
1
−100 −50 0 50 100 150 200
Collector−Emitter Case Temperature, TC [ [o] C]
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
TC = 175 o C
16
12
IC = 25A
8
50A
100A
4
0
4 8 12 16 20
Gate−Emitter Voltage, VGE [V]
[V]
CE
Collector−Emitter Voltage, V
[V]
CE
Collector−Emitter Voltage, V
**----- End of picture text -----**
**Figure 6. Saturation Voltage vs. VGE** **www.onsemi.com** **3** **FGHL50T65SQ** ## **TYPICAL CHARACTERISTICS** **==> picture [209 x 377] intentionally omitted <==** **----- Start of picture text -----**
10000
C ies
1000
100
Coes
10 Cres
Common Emitter
VGE = 0V, f = 1MHz
T C = 25 [o] C
1
1 10 100
Collector−Emitter Voltage, VCE [V]
Figure 7. Capacitance Characteristics
100
t r
td(on)
Common Emitter
VCC = 400V, VGE = 15V
10 IC = 50A
T C = 25 o C
TC = 175 o C
5
0 10 20 30 40 50
Gate Resistance, RG [ � ]
Capacitance [pF]
Switching Time [ns]
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**Figure 9. Turn−on Characteristics vs. Gate Resistance** **==> picture [205 x 171] intentionally omitted <==** **----- Start of picture text -----**
5000
E on
1000
Eoff Common Emitter
V CC = 400V, V GE = 15V
I C = 50A
T C = 25 o C
TC = 175oC
100
0 10 20 30 40 50
Gate Resistance, RG [ � ]
Switching Loss [uJ]
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**Figure 11. Switching Loss vs. Gate Resistance** **==> picture [184 x 169] intentionally omitted <==** **----- Start of picture text -----**
15
Common Emitter
TC = 25 oC
12
400V
VCC [ = 200V] 300V
9
6
3
0
0 20 40 60 80 100
Gate Charge, Qg [nC]
[V]
GE
Gate−Emitter Voltage, V
**----- End of picture text -----**
**Figure 8. Gate Charge Characteristics** **==> picture [206 x 383] intentionally omitted <==** **----- Start of picture text -----**
1000
t d(off)
100 tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
TC = 25 o C
TC = 175oC
10
0 10 20 30 40 50
Gate Resistance, RG [ � ]
Figure 10. Turn−off Characteristics vs. Gate
Resistance
200
Common Emitter
VGE = 15V, RG = 4.7 �
100 T C = 25oC
T C = 175 o C
tr
t
d(on)
10
0 25 50 75 100 125 150
Collector Current, IC [A]
Switching Time [ns]
Switching Time [ns]
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**Figure 10. Turn−off Characteristics vs. Gate Resistance** **Figure 12. Turn−on Characteristics vs. Collector Current** **www.onsemi.com** **4** **FGHL50T65SQ** ## **TYPICAL CHARACTERISTICS** **==> picture [186 x 381] intentionally omitted <==** **----- Start of picture text -----**
500
t f
100
td(off)
10
Common Emitter
V GE = 15V, R G = 4.7 �
T C = 25oC
TC = 175oC
1
0 25 50 75 100 125 150
Collector Current, I C [A]
Figure 13. Turn−off Characteristics vs.
Collector Current
250
Square Wave
TJ <= 175 o C, D = 0.5, VCE = 400V
200 V GE = 15/0V, R G = 4.7 W
TC = 25oC
150
T C = 75 o C
100
TC = 100oC
50
0
1k 10k 100k 1M
Switching Frequency, f[Hz]
Switching Time [ns]
Collector Current, [A]
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**Figure 15. Load Current vs. Frequency** **==> picture [190 x 171] intentionally omitted <==** **----- Start of picture text -----**
10000
Eon
1000 Eoff
Common Emitter
V GE = 15V, R G = 4.7 �
100 TC = 25oC
TC = 175oC
50
0 25 50 75 100 125 150
Collector Current, IC [A]
Switching Loss [uJ]
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**Figure 14. Switching Loss vs. Collector Current** **==> picture [185 x 170] intentionally omitted <==** **----- Start of picture text -----**
300
100 DC
10 m s
100 m s
1ms
10
10 ms
1 *Notes:
1. T C = 25 [o] C
2. T J = 175 [o] C
3. Single Pulse
0.1
1 10 100 1000
Collector−Emitter Voltage, VCE [V]
[A]c
Collector Current, I
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**Figure 16. SOA Characteristics** **==> picture [303 x 151] intentionally omitted <==** **----- Start of picture text -----**
0.6
0.5
0.2
0.1
0.1
0.05 P DM
0.02 t1
0.01 t2
Duty Factor, D = t1/t2
single pulse Peak Tj = Pdm x Zthjc + TC
0.01
10−5 10−4 10−3 10−2 10−1 100
Rectangular Pulse Duration [sec]
Thermal Response [Zthjc]
**----- End of picture text -----**
**Figure 17. Transient Thermal Impedance of IGBT** **www.onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **TO−247−3LD** CASE 340CX ISSUE A DATE 06 JUL 2020 **GENERIC MARKING DIAGRAM*** | ~~| op | 3.51 | 3.58 | 3.65 |~~ XXXXX = Specific Device Code A = Assembly Location ) Y = Year ~~| a | 5.34 | 5.46 | 5.58 |~~ q ~~| ob [1.17 | 1.26 | 1.35 |~~ WW = Work Week XXXXXXXXX G = Pb−Free Package AYWWG *This information is generic. Please refer to T ~~T~~ T T ~~T~~ device data sheet for actual part marking.Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may ~~uy~~ not follow the Generic Marking. . | dpi | ~~13.08|~~ 1281|6.60 | 6.80 ~~~~ |~~ ~~**|**~~ 7.00 ~~~~~ ~ ~~||~~ | Electronic versions are uncontrolled except when accessed directly from the Document Repository. **98AON93302G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ## **DOCUMENT NUMBER:** ## **TO−247−3LD** **PAGE 1 OF 1** ## **DESCRIPTION:** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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