# IGBT, Field Stop Trench, 150 A, 1.6 V, 375 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2781407/)

**URL**: https://novapart.co/products/FGH75T65SQDT-F155/igbt-field-stop-trench-150-a-16-v-375-w-650-to-247
**SKU**: FGH75T65SQDT-F155
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.5800
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Description

DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 375W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 150A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781407/)

## **Is Now Part of** 

## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **June 2017** 

## **FGH75T65SQDT 650 V, 75 A Field Stop Trench IGBT** 

## **Features** 

- Maximum Junction Temperature: TJ = 175[o] C 

- Positive Temperature Co-efficient for Easy Parallel Operating 

- High Current Capability 

- Low Saturation Voltage: VCE(sat) = 1.6 V ( Typ.) @ IC = 75 A 

## **General Description** 

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4[th] generation IGBTs offer he optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. 

- 100% of the Parts tested for ILM(1) 

- High Input Impedance 

- Fast Switching 

## **Applications** 

   - Solar Inverter, UPS, Welder, Telecom, ESS, PFC 

- Tighten Parameter Distribution 

- RoHS Compliant 

**==> picture [34 x 59] intentionally omitted <==**

**----- Start of picture text -----**<br>
E<br>C<br>G<br>COLLECTOR<br>(FLANGE)<br>**----- End of picture text -----**<br>


**==> picture [53 x 60] intentionally omitted <==**

**----- Start of picture text -----**<br>
C<br>G<br>E<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

ee **Symbol Description FGH75T65SQDT_F155** (1) **Unit** ~~a~~ VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage  20 V ~~i~~ Transient Gate to Emitter Voltage 30 V IC Collector Current @ TC = 25[o] C 150 A Ee Collector Current @ TC = 100[o] C 75 A a ILM (2) Pulsed Collector Current @ TC = 25[o] C ee 300 ee A a ICM (3) Pulsed Collector Current 300 A IF Diode Forward Current @ TC = 25[o] C 150 A i Diode Forward Current @ TC = 100[o] C 75 A a IFM (3) Pulsed Diode Maximum Forward Current 300 A PD Maximum Power Dissipation @ TC = 25[o] C 375 W i Maximum Power Dissipation @ TC = 100[o] C 188 W a TJ Operating Junction Temperature -55 to +175 oC a Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC aee 

- **Notes:** 1. Due to system integration constraints between Fairchild and ON semiconductor, as of November 1, 2017 any product part number with a underscore will be replaced with a dash. This is a notification. 

2. VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 21  , Inductive Load 

3. Repetitive rating: Pulse width limited by max. junction temperature 

FGH75T65SQDT •  Rev. 1.0 

Semiconductor Components Industries, LLC, 2017 

www.fairchildsemi.com www.onsemi.com 

**1** 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**FGH75T65SQDT_F155**|**Unit**|
|---|---|---|---|
|RJC(IGBT)|Thermal Resistance, Junction to Case, Max.|0.4|oC/W|
|RJC(Diode)|Thermal Resistance, Junction to Case, Max.|0.65|oC/W|
|RJA|Thermal Resistance, Junction to Ambient, Max.|40|oC/W|



## **Package Marking and Ordering Information** 

|**Part Number**|**Part Number**|**Top Mark**|**Package**|**Package**|**Packing Method **|**Reel Size **|**Reel Size **|**Tape Width**|**Tape Width**|**Quantity**|**Quantity**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|FGH75T65SQDT_F155||FGH75T65SQDT|TO-247 G03||Tube|-||-||30||
|**Electrical Characteristics of the IGBT**TC= 25°C unless otherwise noted||||||||||||
|**Symbol**|**Parameter**|||**Test Conditions**|||**Min.**|**Typ.**|**Max.**||**Unit**|
|**Off Characteristics**||||||||||||
|BVCES|Collector to Emitter Breakdown Voltage|||VGE= 0V, IC= 1 mA|||650|-|-||V|
|BVCES /<br>TJ|Temperature Coefficient of Breakdown<br>Voltage|||IC= 1 mA, Reference to 25oC|||-|0.6|-||V/oC|
|ICES|Collector Cut-Off Current|||VCE= VCES, VGE= 0 V|||-|-|250||A|
|IGES|G-E Leakage Current|||VGE= VGES, VCE= 0 V|||-|-|±400||nA|
|**On Characteristics**||||||||||||
|VGE(th)|G-E Threshold Voltage|||IC= 75 mA, VCE= VGE|||2.6|4.5|6.4||V|
|VCE(sat)|Collector to Emitter Saturation Voltage|||IC= 75 A,VGE= 15 V|||-|1.6|2.1||V|
|||||IC= 75 A,VGE= 15 V,<br>TC= 175oC|||-|1.92|-||V|
|**Dynamic Characteristics**||||||||||||
|Cies|Input Capacitance|||VCE= 30 V,VGE= 0 V,<br>f = 1MHz|||-|4845|-||pF|
|Coes|Output Capacitance||||||-|155|-||pF|
|Cres|Reverse Transfer Capacitance||||||-|14|-||pF|
|**Switching Characteristics**||||||||||||
|td(on)|Turn-On Delay Time|||VCC= 400 V, IC= 18.8 A,<br>RG= 4.7, VGE= 15 V,<br>Inductive Load, TC= 25oC|||-|23|-||ns|
|tr|Rise Time||||||-|10|-||ns|
|td(off)|Turn-Off Delay Time||||||-|120|-||ns|
|tf|Fall Time||||||-|7|-||ns|
|Eon|Turn-On Switching Loss||||||-|300|-||uJ|
|Eoff|Turn-Off Switching Loss||||||-|70|-||uJ|
|Ets|Total Switching Loss||||||-|370|-||uJ|
|td(on)|Turn-On Delay Time|||VCC= 400 V, IC= 37.5 A,<br>RG= 4.7, VGE= 15 V,<br>Inductive Load, TC= 25oC|||-|26|-||ns|
|tr|Rise Time||||||-|19|-||ns|
|td(off)|Turn-Off Delay Time||||||-|114|-||ns|
|tf|Fall Time||||||-|11|-||ns|
|Eon|Turn-On Switching Loss||||||-|746|-||uJ|
|Eoff|Turn-Off Switching Loss||||||-|181|-||uJ|
|Ets|Total Switching Loss||||||-|927|-||uJ|



FGH75T65SQDT •  Rev. 1.0 

Semiconductor Components Industries, LLC, 2017 

www.fairchildsemi.com www.onsemi.com 

**2** 

## **Electrical Characteristics of the IGBT** (Continued) 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Td(on)|Turn-On Delay Time|VCC= 400 V, IC= 18.8 A,<br>RG= 4.7, VGE= 15 V,<br>Inductive Load, TC= 175oC|-|22|-|ns|
|Tr|Rise Time||-|12|-|ns|
|Td(off)|Turn-Off Delay Time||-|135|-|ns|
|Tf|Fall Time||-|14|-|ns|
|Eon|Turn-On Switching Loss||-|760|-|J|
|Eoff|Turn-Off Switching Loss||-|180|-|J|
|Ets|Total Switching Loss||-|940|-|J|
|Td(on)|Turn-On Delay Time|VCC= 400 V, IC= 37.5 A,<br>RG= 4.7, VGE= 15 V,<br>Inductive Load, TC= 175oC|-|24|-|ns|
|Tr|Rise Time||-|24|-|ns|
|Td(off)|Turn-Off Delay Time||-|125|-|ns|
|Tf|Fall Time||-|10|-|ns|
|Eon|Turn-On Switching Loss||-|1520|-|J|
|Eoff|Turn-Off Switching Loss||-|401|-|J|
|Ets|Total Switching Loss||-|1921|-|J|
|Qg|Total Gate Charge|VCE= 400 V, IC= 75 A,<br>VGE= 15 V|-|128|-|nC|
|Qge|Gate to Emitter Charge||-|23|-|nC|
|Qgc|Gate to Collector Charge||-|29|-|nC|



## **Electrical Characteristics of the Diode** TC = 25°C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|VFM|Diode Forward Voltage|IF= 75 A|TC= 25oC|-|1.8|2.1|V|
||||TC= 175oC|-|1.7|-||
|Erec|Reverse Recovery Energy|IF= 75 A, dIF/dt = 200 A/s|TC= 175oC|-|160|-|J|
|Trr|Diode Reverse Recovery Time||TC= 25oC|-|76|-|ns|
||||TC= 175oC|-|270|-||
|Qrr|Diode Reverse Recovery Charge||TC= 25oC|-|206|-|nC|
||||TC= 175oC|-|2199|-||



Semiconductor Components Industries, LLC, 2017 FGH75T65SQDT •  Rev. 1.0 

www.fairchildsemi.com www.onsemi.com 

**3** 

## **Typical Performance Characteristics** 

**==> picture [367 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
7<br>**----- End of picture text -----**<br>


- **Figure 3. Typical Saturation Voltage                          Figure 4. Saturation Voltage vs. Case Characteristics                                                             Temperature at Variant Current Level** 

**Figure 5. Saturation Voltage vs. VGE                          Figure 6. Saturation Voltage vs. VGE** 

Semiconductor Components Industries, LLC, 2017 

FGH75T65SQDT •  Rev. 1.0 

www.fairchildsemi.com www.onsemi.com 

**4** 

**==> picture [512 x 313] intentionally omitted <==**

**----- Start of picture text -----**<br>
Typical Performance Characteristics<br>Figure 7. Capacitance Characteristics                        Figure 8. Gate charge Characteristics<br>10000 15 —— 77<br>pes] Common Emitter<br>1000 >o 12 a A~300VVa<br>a - J<br>> D> 9 Y 400V<br>3=<br>s<br>100 s vA<br>&oO &§<br>10 2<br>Common Emitter oc 3<br>Voe = OV, f = 1MHz °<br>To = 25°C<br>10<br>110 30 0 25 50 75 100 125 150<br>Collector-Emitter Voltage, Vce [V] Gate Charge, Q, [nC]<br>Figure 9. Turn-on Characteristics vs.                         Figure 10. Turn-off Characteristics vs.<br>                Gate Resistance                                                              Gate Resistance<br>500 ——— 1000<br>Common Emitter<br>Vec = 400V, Vee = 15V “J<br>Ic = 75A tajon) 2-22 FGH75T65SQDT — 650 V, 75 A Field Stop Trench IGBT<br>**----- End of picture text -----**<br>


FGH75T65SQDT •  Rev. 1.0 

Semiconductor Components Industries, LLC, 2017 

www.fairchildsemi.com www.onsemi.com 

**5** 

## **Typical Performance Characteristics** 

**==> picture [396 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. Turn-off Characteristics vs.                           Figure 14. Switching Loss vs.<br>                  Collector Current                                                              Collector Current<br>**----- End of picture text -----**<br>


**Figure 17. Forward Characteristics                                                            Figure 18. Reverse Recovery Current** 

FGH75T65SQDT •  Rev. 1.0 

Semiconductor Components Industries, LLC, 2017 

www.fairchildsemi.com www.onsemi.com 

**6** 

## **Typical Performance Characteristics** 

**==> picture [405 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 19. Reverse Recovery Time                                 Figure 20. Stored Charge<br>**----- End of picture text -----**<br>


## **Figure 21.Transient Thermal Impedance of IGBT** 

**==> picture [48 x 233] intentionally omitted <==**

**----- Start of picture text -----**<br>
PDM<br>t1<br>+ t2<br>Duty Factor, D<br>10"<br>ne<br>PDM<br>t1<br>> t I 2 +<br>**----- End of picture text -----**<br>


**Figure 22.Transient Thermal Impedance of Diode** 

Semiconductor Components Industries, LLC, 2017 FGH75T65SQDT •  Rev. 1.0 

www.fairchildsemi.com www.onsemi.com 

**7** 

## **Mechanical Dimensions** 

Semiconductor Components Industries, LLC, 2017 FGH75T65SQDT •  Rev. 1.0 

www.fairchildsemi.com www.onsemi.com 

**8** 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

## **LITERATURE FULFILLMENT:** 

Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Phone** : 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com 

**N. American Technical Support** : 800-282-9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada. 

**Europe, Middle East and Africa Technical Support** : **Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81-3-5817-1050 Sales Representative 

Semiconductor Components Industries, LLC, 2017 FGH75T65SQDT •  Rev. 1.0 

www.fairchildsemi.com www.onsemi.com 

**9** 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor 

**Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 

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**1** 



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