# IGBT, N Channel, 150 A, 1.6 V, 375 W, 650 V, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:2610671/) **URL**: https://novapart.co/products/FGH75T65SQD-F155/igbt-n-channel-150-a-16-v-375-w-650-to-247-3-pins **SKU**: FGH75T65SQD-F155 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €2.5100 **Stock**: 500+ **Lead Time**: 113 days (indicative) ## Description DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | Trench | | Power Dissipation | 375W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 175°C | | Continuous Collector Current | 150A | | Collector Emitter Voltage Max | 650V | | Collector Emitter Saturation Voltage | 1.6V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2610671/) ## IGBT - Field Stop, Trench ## **650 V, 75 A** ## FGH75T65SQD ## **Description** Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4[th] generation IGBTs offer the optimum performance for solar inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential. ## **Features** - Maximum Junction Temperature : TJ =175°C - Positive Temperature Co−efficient for Easy Parallel Operating - High Current Capability - Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A - 100% of the Parts Tested for ILM(1) - High Input Impedance - Fast Switching - Tighten Parameter Distribution - These Devices are Pb−Free and are RoHS Compliant ## **Applications** - Solar Inverter, UPS, Welder, Telecom, ESS, PFC ## **www.onsemi.com** **==> picture [84 x 179] intentionally omitted <==** **----- Start of picture text -----**
C
G
E
E
C
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TO−247−3LD
CASE 340CH
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## **MARKING DIAGRAM** $Y&Z&3&K FGH75T65SQD $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH75T65SQD = Specific Device Code ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: **FGH75T65SQD/D** **1** © Semiconductor Components Industries, LLC, 2016 **April, 2020 − Rev. 5** ## **FGH75T65SQD** **ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) |**ABSOLUTE MAXIMUM RATINGS**(TC= 25°C unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25°C unless otherwise noted)|||| |---|---|---|---|---| |**Description**||**Symbol**|**Rating**|**Unit**| |Collector to Emitter Voltage||VCES|650|V| |Gate to Emitter Voltage||VGES|±20|V| |Transient Gate to Emitter Voltage|||±30|V| |Collector Current|TC= 25°C|IC|150|A| |Collector Current|TC= 100°C||75|A| |Pulsed Collector Current|TC= 25°C|ILM(Note 1)|300|A| |Pulsed Collector Current||ICM(Note 2)|300|A| |Diode Forward Current|TC= 25°C|IF|75|A| |Diode Forward Current|TC= 100°C||50|A| |Pulsed Diode Maximum Forward Current||IFM(Note 2)|300|A| |Maximum Power Dissipation|TC= 25°C|PD|375|W| |Maximum Power Dissipation|TC= 100°C||188|W| |Operating Junction Temperature||TJ|−55 to +175|°C| |Storage Temperature Range||Tstg|−55 to +175|°C| |Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds||TL|300|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V,VGE = 15 V, IC = 300 A, RG = 3 � , Inductive Load 2. Repetive rating: Pulse width limited by max. junction temperature. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**FGH75T65SQD−F155**|**Unit**| |Thermal Resistance, Junction to Case|R�JC(IGBT)|0.4|°C/W| |Thermal Resistance, Junction to Case|R�JC(Diode)|0.65|°C/W| |Thermal Resistance, Junction to Ambient|R�JA|40|°C/W| ## **PACKAGE MARKING AND ORDERING INFORMATION** |**Part Number**|**Top Mark**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---|---| |FGH75T65SQD−F155|FGH75T65SQD|TO−247−3
(Pb−Free)|Tube|−|−|30| ## **ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) |**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |**OFF CHARACTERISTICS**||||||| |Collector to Emitter Breakdown Voltage|BVCES|VGE= 0 V, IC= 1 mA|650|−|−|V| |Temperature Coefficient of Breakdown
Voltage|�BVCES/�TJ|IC= 1 mA, Reference to 25°C|−|0.6|−|V/°C| |Collector Cut−Off Current|ICES|VCE= VCES, VGE= 0 V|−|−|250|�A| |G−E Leakage Current|IGES|VGE= VGES, VCE= 0 V|−|−|±400|nA| |**ON CHARACTERISTICs**||||||| |G−E Threshold Voltage|VGE(th)|IC= 75 mA, VCE= VGE|2.6|4.5|6.4|V| |Collector to Emitter Saturation Voltage|VCE(sat)|IC= 75 A, VGE= 15 V|−|1.6|2.1|V| |||IC= 75 A, VGE= 15 V, TC= 175°C|−|1.92|−|V| **www.onsemi.com** **2** ## **FGH75T65SQD** **ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) (continued) |**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |**DYNAMIC CHARACTERISTICS**||||||| |Input Capacitance|Cies|VCE= 30 V, VGE= 0 V, f = 1 MHz|−|4845|−|pF| |Output Capacitance|Coes||−|155|−|pF| |Reverse Transfer Capacitance|Cres||−|14|−|pF| |**SWITCHING CHARACTERISTICS**||||||| |Turn−On Delay Time|td(on)|VCC= 400 V, IC= 18.8 A,
RG= 4.7��VGE= 15 V,
Inductive Load, TC= 25°C|−|23|−|ns| |Rise Time|tr||−|10|−|ns| |Turn−Off Delay Time|td(off)||−|120|−|ns| |Fall Time|tf||−|7|−|ns| |Turn−On Switching Loss|Eon||−|300|−|�J| |Turn−Off Switching Loss|Eoff||−|70|−|�J| |Total Switching Loss|Ets||−|370|−|�J| |Turn−On Delay Time|td(on)|VCC= 400 V, IC= 37.5 A,
RG= 4.7��VGE= 15 V,
Inductive Load, TC= 25°C|−|26|−|ns| |Rise Time|tr||−|19|−|ns| |Turn−Off Delay Time|td(off)||−|114|−|ns| |Fall Time|tf||−|11|−|ns| |Turn−On Switching Loss|Eon||−|746|−|�J| |Turn−Off Switching Loss|Eoff||−|181|−|�J| |Total Switching Loss|Ets||−|927|−|�J| |Turn−On Delay Time|td(on)|VCC= 400 V, IC= 18.8 A,
RG= 4.7��VGE= 15 V,
Inductive Load, TC= 175°C|−|22|−|ns| |Rise Time|tr||−|12|−|ns| |Turn−Off Delay Time|td(off)||−|135|−|ns| |Fall Time|tf||−|14|−|ns| |Turn−On Switching Loss|Eon||−|760|−|�J| |Turn−Off Switching Loss|Eoff||−|180|−|�J| |Total Switching Loss|Ets||−|940|−|�J| |Turn−On Delay Time|td(on)|VCC= 400 V, IC= 37.5 A,
RG= 4.7��VGE= 15 V,
Inductive Load, TC= 175°C|−|24|−|ns| |Rise Time|tr||−|24|−|ns| |Turn−Off Delay Time|td(off)||−|125|−|ns| |Fall Time|tf||−|10|−|ns| |Turn−On Switching Loss|Eon||−|1520|−|�J| |Turn−Off Switching Loss|Eoff||−|401|−|�J| |Total Switching Loss|Ets||−|1921|−|�J| |Total Gate Charge|Qg|VCE= 400 V, IC= 75 A, VGE= 15 V|−|128|−|nC| |Gate to Emitter Charge|Qge||−|23|−|nC| |Gate to Collector Charge|Qgc||−|29|−|nC| **www.onsemi.com** **3** **FGH75T65SQD** ## **ELECTRICAL CHARACTERISTICS OF THE DIODE** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERIST**|**ICS OF TH**|**E DIODE**(TJ= 25°C unless otherwise noted)|**E DIODE**(TJ= 25°C unless otherwise noted)||||| |---|---|---|---|---|---|---|---| |**Parametr**|**Symbol**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**| |Diode Forward Voltage|VFM|IF= 50 A|TC= 25°C|−|2.0|2.6|V| ||||TC= 175°C|−|1.64|−|| |Reverse Recovery Energy|Erec|IF= 50 A, dIF/ dt = 200 A/�s|TC= 175°C|−|61|−|�J| |Diode Reverse Recovery Time|trr||TC= 25°C|−|43|−|ns| ||||TC= 175°C|−|210|−|| |Diode Reverse Recovery Charge|Qrr||TC= 25°C|−|90|−|nC| ||||TC= 175°C|−|1280|−|| **www.onsemi.com** **4** **FGH75T65SQD** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [191 x 578] intentionally omitted <==** **----- Start of picture text -----**
300
TC = 25oC 20V
15V
240 12V
10V
VGE [ = 8V]
180
120
60
0
0 1 2 3 4 5
Collector−Emitter Voltage, VCE [V]
Figure 1. Typical Output Characteristics
300
Common Emitter
VGE = 15V
240 T C = 25oC
TC = 175 o C
180
120
60
0
0 1 2 3 4 5
Collector−Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
20
Common Emitter
TC = 25 o C
16
12
IC = 40A
8
75A
150A
4
0
4 8 12 16 20
Gate−Emitter Voltage, VGE [V]
Collector Current, Ic [A]
Collector Current, Ic [A]
[V]
CE
Collector−Emitter Voltage, V
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**Figure 5. Saturation Voltage vs VGE** **==> picture [192 x 574] intentionally omitted <==** **----- Start of picture text -----**
300 TC = 175oC 20V
15V
240 12V
10V
VGE [ = 8V]
180
120
60
0
0 1 2 3 4 5
Collector−Emitter Voltage, VCE [V]
Figure 2. Typical Output Characteristics
3
Common Emitter
VGE [ = 15V]
150A
2
75A
IC = 40A
1
−100 −50 0 50 100 150 200
Collector−Emitter Case Temperature, TC [ ° C]
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
TC = 175 o C
16
12
IC = 40A
8
75A
150A
4
0
4 8 12 16 20
Gate−Emitter Voltage, VGE [V]
Collector Current, Ic [A]
[V]
CE
Collector−Emitter Voltage, V
[V]
CE
Collector−Emitter Voltage, V
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**Figure 6. Saturation Voltage vs VGE** **www.onsemi.com** **5** **FGH75T65SQD** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [200 x 574] intentionally omitted <==** **----- Start of picture text -----**
10000
C ies
1000
100 Coes
10 Cres
Common Emitter
VGE = 0V, f = 1MHz
T C = 25 o C
1
11 0 30
Collector−Emitter Voltage, VCE [V]
Figure 7. Capacitance Characteristics
500
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
T C = 25oC
TC = 175oC tr
100
td(on)
20
0 10 20 30 40 50
Gate Resistance, RG [ � ]
Figure 9. Turn−On Characteristics vs.
Gate Resistance
10000
E on
Common Emitter
Eoff VCC = 400V, VGE = 15V
1000 IC = 75A
TC = 25oC
T C = 175 o C
500
0 10 20 30 40 50
Gate Resistance, RG [ � ]
Capacitance [pF]
Switching Time [ns]
Switching Loss [uJ]
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**Figure 11. Switching Loss vs. Gate Resistance** **==> picture [195 x 168] intentionally omitted <==** **----- Start of picture text -----**
15
Common Emitter
TC = 25 o C
12
300V
VCC [ = 200V] 400V
9
6
3
0
0 25 50 75 100 125 150
Gate Charge, Qg [nC]
[V]
GE
Gate−Emitter Voltage, V
**----- End of picture text -----**
**Figure 8. Gate Charge Characteristic** **==> picture [196 x 370] intentionally omitted <==** **----- Start of picture text -----**
1000
t d(off)
100 tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
TC = 25 o C
TC = 175oC
10
0 10 20 30 40 50
Gate Resistance, RG [ � ]
Figure 10. Turn−Off Characteristics vs.
Gate Resistance
1000
Common Emitter
V GE = 15V, R G = 4.7 �
T C = 25 o C
TC = 175 o C
tr
100
td(on)
10
0 30 60 90 120 150
Collector Current, IC [A]
Switching Time [ns]
Switching Time [ns]
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**Figure 10. Turn−Off Characteristics vs. Gate Resistance** **Figure 12. Turn−On Characteristics vs. Collector Current** **www.onsemi.com** **6** **FGH75T65SQD** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [204 x 576] intentionally omitted <==** **----- Start of picture text -----**
500
td(off)
100
t f
Common Emitter
VGE = 15V, RG = 4.7 W
10 TC = 25 o C
T C = 175oC
5
0 30 60 90 120 150
Collector Current, IC [A]
Figure 13. Turn−Off Characteristics vs.
Collector Current
375
Square Wave
TJ <= 175 o C, D = 0.5, VCE = 400V
300 V GE = 15/0V, R G = 4.7 W
TC = 25oC
225
T C = 75oC
150
T C = 100 o C
75
0
1k 10k 100k 1M
Switching Frequency, f[Hz]
Figure 15. Load Current vs. Frequency
300
100
TC = 175 o C TC = 25 o C
10
T C = 75oC TC = 25 [o] C
TC = 75 [o] C
TC = 175 [o] C
1
0 1 2 3 4 5
Forward Voltage, VF [V]
Switching Time [ns]
Collector Current, [A]
[A]
F
Forward Current, I
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**Figure 17. Forward Characteristics** **==> picture [199 x 372] intentionally omitted <==** **----- Start of picture text -----**
10000
Eon
1000
Common Emitter
100 Eoff V TCGE = 25 = 15V, R oC G = 4.7 W
TC = 175oC
50
0 30 60 90 120 150
Collector Current, IC [A]
Figure 14. Switching Loss vs.
Collector Current
500
100
10ms
100ms
1ms
10
10 ms
DC
1 * Notes:
1. TC = 25 [o] C
2. TJ = 175 [o] C
3. Single Pulse
0.1
1 10 100 1000
Collector−Emitter, VCE [V]
s]
�
Switching Loss [
[A]
C
Collector Current, I
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**Figure 16. SOA Characteristics** **==> picture [205 x 172] intentionally omitted <==** **----- Start of picture text -----**
16
TC = 25 [o] C
TC = 175 [o] C −−− di/dt = 200A/ms
12
8 di/dt = 100A/ms
di/dt = 200A/ms
4
di/dt = 100A/ ms
0
0 30 60 90 120 150
Forward Current, IF [A]
[A]
rr
Reverse Recovery Current, I
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**Figure 18. Reverse Recovery Current** **www.onsemi.com** **7** **FGH75T65SQD** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [451 x 170] intentionally omitted <==** **----- Start of picture text -----**
350 1500
TC = 25 [o] C TC = 25 [o] C
280 TC = 175 [o] C −−− 1200 TC = 175 [o] C −−−
210 900
140 600
di/dt = 200A/ � s di/dt = 100A/ � s di/dt = 100A/ � s di/dt = 200A/ � s
70 300
0 0
0 30 60 90 120 150 0 30 60 90 120 150
Forward Current, IF [A] Forward Current, IF [A]
[ns] [nC]
rr rr
Reverse Recovery Time, t Stored Recovery Charge, Q
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**Figure 19. Reverse Recovery Time** **Figure 20. Stored Charge** **==> picture [307 x 336] intentionally omitted <==** **----- Start of picture text -----**
0.6
0.5
0.1 0.2
0.1
0.05 PDM
0.02 t 1
0.01 t2
0.01 Duty Factor, D = t1/t2
single pulse Peak Tj = Pdm x Zthjc + T C
0.005
10−5 10−4 10−3 10−2 10−1 100
Rectangular Pulse Duration [sec]
Figure 21. Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
0.1 0.05
PDM
0.02
t 1
0.01 t 2
single pulse Duty Factor, D = t1/t2
Peak T = Pdm x Zthjc + Tj C
0.01
10−5 10−4 10−3 10−2 10−1 100
Rectangular Pulse Duration [sec]
Thermal Response [Zthjc]
Thermal Response [Zthjc]
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**Figure 22. Transient Thermal Impedance of Diode** **www.onsemi.com** **8** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [56 x 29] intentionally omitted <==** **----- Start of picture text -----**
TO−247−3LD
CASE 340CH
ISSUE A
**----- End of picture text -----**
DATE 09 OCT 2019 **==> picture [465 x 210] intentionally omitted <==** **----- Start of picture text -----**
E. LEAD FINISH GENERIC IS UNCONTROLLED IN THE REGION DEFINED BY L1. |e | ~ | 556| ~ |
MARKING DIAGRAM* 19.75 | 20.00 | 20.25
-—
) q | op | 3.51 | 3.58 | 3.65 |
| Q | 5.34 | 5.46 | 5.58 |
XXXXXXXXX
AYWWG XXXX = Specific Device Code
A = Assembly Location | ob | 4.17 | 1.26 | 1.35 |
Y = Year
TT WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer to 13.08[ ~ | ~ |
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “or may not be present. Some products may . ”, may 1281| ~ | ~ |
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13853G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**----- End of picture text -----**
**DOCUMENT NUMBER: 98AON13853G DESCRIPTION: TO−247−3LD** **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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