# IGBT, 150 A, 1.6 V, 455 W, 650 V, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:3368688/) **URL**: https://novapart.co/products/FGH75T65SHDT-F155/igbt-150-a-16-v-455-w-650-to-247-3-pins **SKU**: FGH75T65SHDT-F155 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €2.5100 **Stock**: 100+ **Lead Time**: 106 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 455W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 175°C | | Continuous Collector Current | 150A | | Collector Emitter Voltage Max | 650V | | Collector Emitter Saturation Voltage | 1.6V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3368688/) ## FGH75T65SHDT 650 V, 75 A Field Stop Trench IGBT ## General Description ## Features - Maximum Junction Temperature: TJ = 175J = 175= 175[[o]] C Maximum Junction Temperature: TJ = 175J = 175= 175[[o]] C Using novel field stop IGBT technology, ON Semiconductor’s new • Positive Temperature Co-efficient for Easy Parallel Operating series of field stop 3[rd] generation IGBTs offer the optimum • High Current Capability performance for solar inverter, UPS, welder, telecom, ESS and PFC applica-tions where low conduction and switching losses • Low Saturation Voltage: VCE(sat) = 1.6 V(Typ.) @ IC = 75 A are essential. • 100% of the Parts Tested for ILM(1) Applications • High Input Impedance • Fast Switching • Solar Inverter, UPS, Welder, Telecom, ESS, PFC • Tighten Parameter Distribution • RoHS Compliant C G G ey C E TO-247 «& E long leads Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description FGH75T65SHDT - F155 Unit VCES Collector to Emitter Voltage 650 V Gate to Emitter Voltage ± 20 V VGES Transient Gate to Emitter Voltage ± 30 V IC Collector Current @ TC = 25[o] C 150 A Collector Current @ TC = 100[o] C 75 A ILM (1) Pulsed Collector Current @ TC = 25[o] C 225 A ICM (2) Pulsed Collector Current 225 A IF Diode Forward Current @ TC = 25[o] C 125 A Diode Forward Current @ TC = 100[o] C 75 A ~~—————~~ IFM (2) Pulsed Diode Maximum Forward Current 225 A PD Maximum Power Dissipation @ TC = 25[o] C 455 W Maximum Power Dissipation @ TC = 100[o] C 227 W TJ Operating Junction Temperature -55 to +175 oC ~~——————~~ Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for solderingPurposes, 1/8” from case for 5 seconds 300 oC Notes: 1. VCC = 400 V, VGE = 15 V, IC = 225 A, RG = 20 Ω, Inductive Load 2. Repetitive rating: Pulse width limited by max. junction temperature - ©2015 Semiconductor Components Industries, LLC. Publication Order Number: FGH75T65SHDT-F155/D September-2017, Rev. 2 ## Thermal Characteristics |Symbol|Parameter|FGH75T65SHDT-F155|Unit| |---|---|---|---| |RθJC(IGBT)|Thermal Resistance, Junction to Case, Max.|0.33|oC/W| |RθJC(Diode)|Thermal Resistance, Junction to Case, Max.|0.65|oC/W| |RθJA|Thermal Resistance, Junction to Ambient, Max.|40|oC/W| ## Package Marking and Ordering Information |Part Number|Part Number|Top Mark|Package|Package|Packing Method|Reel Size|Reel Size|Tape Width|Tape Width|Tape Width|Quantity|Quantity| |---|---|---|---|---|---|---|---|---|---|---|---|---| |FGH75T65SHDT-155||FGH75T65SHDT|TO-247 G03||Tube||-|-|||30|| |Electrical Characteristics of the IGBTTC= 25°C unless otherwise noted||||||||||||| |Symbol|Parameter|||Test Conditions|||Min.||Typ.|Max.||Unit| |Off Characteristics||||||||||||| |BVCES|Collector to Emitter Breakdown Voltage|||VGE= 0V, IC= 1 mA|||650||-|-||V| |∆BVCES /
∆TJ|Temperature Coefficient of Breakdown
Voltage|||IC= 1 mA, Reference to 25oC|||-||0.6|-||V/oC| |ICES|Collector Cut-Off Current|||VCE= VCES, VGE= 0 V|||-||-|250||µA| |IGES|G-E Leakage Current|||VGE= VGES, VCE= 0 V|||-||-|±400||nA| |On Characteristics||||||||||||| |VGE(th)|G-E Threshold Voltage|||IC= 75 mA, VCE= VGE|||4.0||5.5|7.5||V| |VCE(sat)|Collector to Emitter Saturation Voltage|||IC= 75 A,VGE= 15 V|||-||1.6|2.1||V| |||||IC= 75 A,VGE= 15 V,
TC= 175oC|||-||2.28|-||V| |Dynamic Characteristics||||||||||||| |Cies|Input Capacitance|||VCE= 30 V,VGE= 0 V,
f = 1MHz|||-||3680|-||pF| |Coes|Output Capacitance||||||-||179|-||pF| |Cres|Reverse Transfer Capacitance||||||-||43|-||pF| |Switching Characteristics||||||||||||| |td(on)|Turn-On Delay Time|||VCC= 400 V, IC= 75 A,
RG= 3Ω, VGE= 15 V,
Inductive Load, TC= 25oC|||-||28|-||ns| |tr|Rise Time||||||-||61|-||ns| |td(off)|Turn-Off Delay Time||||||-||86|-||ns| |tf|Fall Time||||||-||16|-||ns| |Eon|Turn-On Switching Loss||||||-||3|-||mJ| |Eoff|Turn-Off Switching Loss||||||-||0.75|-||mJ| |Ets|Total Switching Loss||||||-||3.75|-||mJ| |td(on)|Turn-On Delay Time||||||-||27|-||ns| |tr|Rise Time||||||-||62|-||ns| |td(off)|Turn-Off Delay Time|||VCC= 400 V, IC= 75 A,
RG= 3Ω, VGE= 15 V,
Inductive Load, TC= 175oC|||-||93|-||ns| |tf|Fall Time||||||-||16|-||ns| |Eon|Turn-On Switching Loss||||||-||4.7|-||mJ| |Eoff|Turn-Off Switching Loss||||||-||1.03|-||mJ| |Ets|Total Switching Loss||||||-||5.73|-||mJ| www.onsemi.com 2 ## Electrical Characteristics of the IGBT (Continued) |Electric|al Characteristics of t|e IGBT(Continued)||||| |---|---|---|---|---|---|---| |Symbol|Parameter|Test Conditions|Min.|Typ.|Max|Unit| |Qg|Total Gate Charge|VCE= 400 V, IC= 75 A,
V= 15 V|-|123|-|nC| |Qge|Gate to Emitter Charge||-|22.6|-|nC| |Qgc|Gate to Collector Charge|GE|-|44.9|-|nC| |Electrical Characteristics of the DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of the DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of the DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of the DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of the DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of the DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of the DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of the DiodeTC= 25°C unless otherwise noted| |---|---|---|---|---|---|---|---| |Symbol|Parameter|Test Conditions||Min.|Typ.|Max|Unit| |VFM|Diode Forward Voltage|IF= 75 A|TC= 25oC|-|1.8|2.1|V| ||||TC= 175oC|-|1.7|-|| |Erec|Reverse Recovery Energy|IF=75 A, dIF/dt = 200 A/µs|TC= 175oC|-|160|-|uJ| |trr|Diode Reverse Recovery Time||TC= 25oC|-|76|-|ns| ||||TC= 175oC|-|270|-|| |Qrr|Diode Reverse Recovery Charge||TC= 25oC|-|206|-|nC| ||||TC= 175oC|-|2199|-|| www.onsemi.com 3 ## Typical Performance Characteristics **==> picture [193 x 10] intentionally omitted <==** **----- Start of picture text -----**
Figure 1. Typical Output Characteristics
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**==> picture [206 x 384] intentionally omitted <==** **----- Start of picture text -----**
225
TC = 25oC 20V 15V
200
12V
10V
150
100 VGE = 8V
50
0
0 1 2 3 4 5 6
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
225
Common Emitter
200
VGE = 15V
TC = 25 o C
150 TC = 175oC
100
50
0
0 1 2 3 4 5
Collector-Emitter Voltage, VCE [V]
[A]
C
Collector Current, I
[A]
C
Collector Current, I
**----- End of picture text -----**
Figure 3. Typical Saturation Voltage Characteristics Figure 5. Saturation Voltage vs. VGE **==> picture [205 x 171] intentionally omitted <==** **----- Start of picture text -----**
20
Common Emitter
TC = 25 o C
16
12
75A
8
IC = 40A 150A
4
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
[V]
CE
V
,
Collector-Emitter Voltage
**----- End of picture text -----**
Figure 2. Typical Output Characteristics **==> picture [207 x 595] intentionally omitted <==** **----- Start of picture text -----**
225
TC = 175oC 20V 15V
200
12V
10V
150
VGE = 8V
100
50
0
0 1 2 3 4 5 6
Collector-Emitter Voltage, VCE [V]
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
4
Common Emitter
VGE = 15V
3
150A
2 75A
IC = 40A
1
-50 0 50 100 150
Case Temperature, TC [ [o] C]
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
TC = 175 o C
16
12
75A
8
IC = 40A 150A
4
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
[A]
C
Collector Current, I
[V]
CE
Collector-Emitter Voltage, V
[V]
CE
Collector-Emitter Voltage, V
**----- End of picture text -----**
## Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level www.onsemi.com 4 ## Typical Performance Characteristics Figure 7. Capacitance Characteristics ## Figure 8. Gate charge Characteristics **==> picture [437 x 593] intentionally omitted <==** **----- Start of picture text -----**
10000 15
Common Emitter
TC = 25 o C
C ies 12
300V
1000
9 VCC = 200V 400V
C oes
6
100
Cres
Common Emitter 3
V GE = 0V, f = 1MHz
TC = 25 o C
10 0
1 10 30 0 25 50 75 100 125
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]
Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
200 1000
tr t d(off)
100
tf
100
t d(on)
Common Emitter Common Emitter
VCC = 400V, VGE = 15V VCC = 400V, VGE = 15V
IC = 75A IC = 75A
TC = 25oC TC = 25 o C
TC = 175oC TC = 175oC
10 10
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance, RG [ Ω ] Gate Resistance, RG [ Ω ]
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
10 100
Eon
t
d(on)
Common Emitter
Eoff VCC = 400V, VGE = 15V tr Common Emitter
1 IC = 75A 10 VGE = 15V, RG = 3 Ω
T C = 25 o C T C = 25 o C
T C = 175 o C T C = 175 o C
0.5 5
0 10 20 30 40 50 15 30 45 60 75
Gate Resistance, RG [ Ω ] Collector Current, IC [A]
[V]
GE
Capacitance [pF] Gate-Emitter Voltage, V
Switching Time [ns] Switching Time [ns]
Switching Loss [mJ] Switching Time [ns]
**----- End of picture text -----**
Figure 9. Turn-on Characteristics vs. Gate Resistance Figure 11. Switching Loss vs. Gate Resistance www.onsemi.com 5 ## Typical Performance Characteristics ## Figure 13. Turn-off Characteristics vs. Collector Current **==> picture [144 x 19] intentionally omitted <==** **----- Start of picture text -----**
Figure 14. Switching Loss vs.
Collector Current
**----- End of picture text -----**
**==> picture [437 x 571] intentionally omitted <==** **----- Start of picture text -----**
200 6
100
td(off)
Eon
1
10 tf
Common Emitter
Common Emitter
VGE = 15V, RG = 3 Ω Eoff VGE = 15V, RG = 3 Ω
TC = 25oC 0.1 T C = 25oC
TC = 175oC T C = 175oC
1 0.05
15 30 45 60 75 15 30 45 60 75
Collector Current, IC [A] Collector Current, IC [A]
Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics
300
375
Square Wave
TJ <= 175 o C, D = 0.5, VCE = 400V 100 10 µ s
300 V GE = 15/0V, R G = 3 Ω
100 µ s
225 TC = 25oC 10 10 ms 1ms
DC
T C = 75 o C
150 TC = 100oC
1 *Notes:
75 1. TC = 25 [o] C
2. TJ = 175 [o] C
3. Single Pulse
0.1
0
1 10 100 1000
1k 10k 100k 1M
Switching Frequency, f[Hz] Collector-Emitter Voltage, VCE [V]
Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current
200 24
TC = 25 [o] C
100
TC = 175 [o] C ---
18 di/dt = 200A/ µ s
TC = 175 o C TC = 25 o C 12
di/dt = 100A/ µ s
10
TC = 75oC
di/dt = 200A/ µ s
T C = 25 [o] C 6
T C = 75 [o] C
di/dt = 100A/ µ s
1 TC = 175 [o] C 0
0 1 2 3 0 10 20 30 40 50 60 70 80
Forward Voltage, VF [V] Forward Current, IF [A]
Switching Time [ns] Switching Loss [mJ]
[A]
c
Collector Current, [A]
Collector Current, I
[A]
rr
[A]
F
Forward Current, I
Reverse Recovery Currnet, I
**----- End of picture text -----**
Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics ## Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 6 ## Typical Performance Characteristics **==> picture [434 x 186] intentionally omitted <==** **----- Start of picture text -----**
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
400 3000
TC = 25 [o] C T C = 25 [o] C
TC = 175 [o] C - - - 2500 T C = 175 [o] C - - -
300
2000
200 1500
di/dt = 100A/ µ s
di/dt = 200A/ µ s di/dt = 200A/ µ s
1000
di/dt = 100A/ µ s
100
500
0 0
0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80
Forward Current, IF [A] Forward Current, IF [A]
[ns]rr [nC]rr
Reverse Recovery Time, t Stored Recovery Charge, Q
**----- End of picture text -----**
Figure 19. Reverse Recovery Time Figure 21.Transient Thermal Impedance of IGBT **==> picture [346 x 373] intentionally omitted <==** **----- Start of picture text -----**
0.6
0.5
0.1
0.2
0.1
0.05
0.02
0.01 0.01 P DM
single pulse t1t 2
Duty Factor, D = t1/t2
[Peak T][j][ = Pdm x Zthjc + T] C
1E-3
10-5 10-4 10-3 10-2 10-1 100
Rectangular Pulse Duration [sec]
Figure 22.Transient Thermal Impedance of Diode
1
0.5
0.2
0.1
0.1
0.05
P DM
0.02
t 1
0.01 t2
0.01 single pulse Duty Factor, D = t1/t2
[Peak T][j][ = Pdm x Zthjc + T] C
0.005
10-5 10-4 10-3 10-2 10-1 100
Rectangular Pulse Duration [sec]
Thermal Response [Zthjc]
Thermal Response [Zthjc]
**----- End of picture text -----**
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