# IGBT, 120 A, 1.6 V, 333 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2895667/)

**URL**: https://novapart.co/products/FGH60T65SQD-F155/igbt-120-a-16-v-333-w-650-to-247-3-pins
**SKU**: FGH60T65SQD-F155
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.1700
**Stock**: 200+
**Lead Time**: 113 days (indicative)

## Description

DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pin

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 333W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 120A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2895667/)

## **January 2018** 

## **FGH60T65SQD 650 V, 60 A Field Stop Trench IGBT** 

## **Features** 

- Maximum Junction Temperature: TJ = 175[o] C 

- Positive Temperature Co-efficient for Easy Parallel Operating 

- High Current Capability 

- Low Saturation Voltage: VCE(sat) = 1.6 V ( Typ.) @ IC = 60 A 

## **General Description** 

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4[th] generation IGBTs offer he optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. 

- 100% of the Parts tested for ILM(1) 

- High Input Impedance 

- Fast Switching 

## **Applications** 

   - Solar Inverter, UPS, Welder, Telecom, ESS, PFC 

- Tighten Parameter Distribution 

- RoHS Compliant 

**==> picture [34 x 59] intentionally omitted <==**

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E<br>C<br>G<br>COLLECTOR<br>(FLANGE)<br>**----- End of picture text -----**<br>


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## **Absolute Maximum Ratings** 

ee **Symbol Description FGH60T65SQD-F155 Unit** ~~a~~ VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage  20 V ~~i~~ Transient Gate to Emitter Voltage 30 V IC Collector Current @ TC = 25[o] C 120 A Ee Collector Current @ TC = 100[o] C 60 A a ILM (1) Pulsed Collector Current @ TC = 25[o] C ee 240 ee A a ICM (2) Pulsed Collector Current 240 A IF Diode Forward Current @ TC = 25[o] C 60 A i Diode Forward Current @ TC = 100[o] C 30 A a IFM (2) Pulsed Diode Maximum Forward Current 240 A PD Maximum Power Dissipation @ TC = 25[o] C 333 W i Maximum Power Dissipation @ TC = 100[o] C 167 W a TJ Operating Junction Temperature -55 to +175 oC a Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC aee **Notes:** 1. VCC = 400 V, VGE = 15 V, IC = 240 A, RG = 21  , Inductive Load 

2. Repetitive rating: Pulse width limited by max. junction temperature 

© 2018 Semiconductor Components Industries, LLC. Publication Order Number: January-2018, Rev.2                                                                                                                                                                                      FGH60T65SQD/D 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**FGH60T65SQD-F155**|**Unit**|
|---|---|---|---|
|RJC(IGBT)|Thermal Resistance, Junction to Case, Max.|0.45|oC/W|
|RJC(Diode)|Thermal Resistance, Junction to Case, Max.|1.25|oC/W|
|RJA|Thermal Resistance, Junction to Ambient, Max.|40|oC/W|



## **Package Marking and Ordering Information** 

|**Part Number**|**Part Number**|**Top Mark**|**Package**|**Package**|**Packing Method **|**Reel Size **|**Reel Size **|**Tape Width**|**Tape Width**|**Quantity**|**Quantity**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|FGH60T65SQD-F155||FGH60T65SQD|TO-247 G03||Tube|-||-||30||
|**Electrical Characteristics of the IGBT**TC= 25°C unless otherwise noted||||||||||||
|**Symbol**|**Parameter**|||**Test Conditions**|||**Min.**|**Typ.**|**Max.**||**Unit**|
|**Off Characteristics**||||||||||||
|BVCES|Collector to Emitter Breakdown Voltage|||VGE= 0V, IC= 1 mA|||650|-|-||V|
|BVCES /<br>TJ|Temperature Coefficient of Breakdown<br>Voltage|||IC= 1 mA, Reference to 25oC|||-|0.6|-||V/oC|
|ICES|Collector Cut-Off Current|||VCE= VCES, VGE= 0 V|||-|-|250||A|
|IGES|G-E Leakage Current|||VGE= VGES, VCE= 0 V|||-|-|±400||nA|
|**On Characteristics**||||||||||||
|VGE(th)|G-E Threshold Voltage|||IC= 60 mA, VCE= VGE|||2.6|4.5|6.4||V|
|VCE(sat)|Collector to Emitter Saturation Voltage|||IC= 60 A,VGE= 15 V|||-|1.6|2.1||V|
|||||IC= 60 A,VGE= 15 V,<br>TC= 175oC|||-|1.92|-||V|
|**Dynamic Characteristics**||||||||||||
|Cies|Input Capacitance|||VCE= 30 V,VGE= 0 V,<br>f = 1MHz|||-|3813|-||pF|
|Coes|Output Capacitance||||||-|90|-||pF|
|Cres|Reverse Transfer Capacitance||||||-|13|-||pF|
|**Switching Characteristics**||||||||||||
|td(on)|Turn-On Delay Time|||VCC= 400 V, IC= 15 A,<br>RG= 4.7, VGE= 15 V,<br>Inductive Load, TC= 25oC|||-|20.8|-||ns|
|tr|Rise Time||||||-|8|-||ns|
|td(off)|Turn-Off Delay Time||||||-|102|-||ns|
|tf|Fall Time||||||-|11.2|-||ns|
|Eon|Turn-On Switching Loss||||||-|227|-||uJ|
|Eoff|Turn-Off Switching Loss||||||-|100|-||uJ|
|Ets|Total Switching Loss||||||-|327|-||uJ|
|td(on)|Turn-On Delay Time|||VCC= 400 V, IC= 30 A,<br>RG= 4.7, VGE= 15 V,<br>Inductive Load, TC= 25oC|||-|21.6|-||ns|
|tr|Rise Time||||||-|14.4|-||ns|
|td(off)|Turn-Off Delay Time||||||-|97.6|-||ns|
|tf|Fall Time||||||-|4.8|-||ns|
|Eon|Turn-On Switching Loss||||||-|585|-||uJ|
|Eoff|Turn-Off Switching Loss||||||-|167|-||uJ|
|Ets|Total Switching Loss||||||-|752|-||uJ|



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## **Electrical Characteristics of the IGBT** (Continued) 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Td(on)|Turn-On Delay Time|VCC= 400 V, IC= 15 A,<br>RG= 4.7, VGE= 15 V,<br>Inductive Load, TC= 175oC|-|19.2|-|ns|
|Tr|Rise Time||-|9.6|-|ns|
|Td(off)|Turn-Off Delay Time||-|115|-|ns|
|Tf|Fall Time||-|11.2|-|ns|
|Eon|Turn-On Switching Loss||-|448|-|J|
|Eoff|Turn-Off Switching Loss||-|199|-|J|
|Ets|Total Switching Loss||-|647|-|J|
|Td(on)|Turn-On Delay Time|VCC= 400 V, IC= 30 A,<br>RG= 4.7, VGE= 15 V,<br>Inductive Load, TC= 175oC|-|20.8|-|ns|
|Tr|Rise Time||-|16|-|ns|
|Td(off)|Turn-Off Delay Time||-|106|-|ns|
|Tf|Fall Time||-|8.8|-|ns|
|Eon|Turn-On Switching Loss||-|942|-|J|
|Eoff|Turn-Off Switching Loss||-|386|-|J|
|Ets|Total Switching Loss||-|1328|-|J|
|Qg|Total Gate Charge|VCE= 400 V, IC= 60 A,<br>VGE= 15 V|-|79|-|nC|
|Qge|Gate to Emitter Charge||-|22|-|nC|
|Qgc|Gate to Collector Charge||-|27|-|nC|



## **Electrical Characteristics of the Diode** TC = 25°C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|VFM|Diode Forward Voltage|IF= 30 A|TC= 25oC|-|2.3|2.7|V|
||||TC= 175oC|-|1.9|-||
|Erec|Reverse Recovery Energy|IF= 30 A, dIF/dt = 200 A/s|TC= 175oC|-|50|-|J|
|Trr|Diode Reverse Recovery Time||TC= 25oC|-|34.6|-|ns|
||||TC= 175oC|-|197|-||
|Qrr|Diode Reverse Recovery Charge||TC= 25oC|-|58.6|-|nC|
||||TC= 175oC|-|810|-||



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## **Typical Performance Characteristics** 

**Figure 3. Typical Saturation Voltage                          Figure 4. Saturation Voltage vs. Case Characteristics                                                             Temperature at Variant Current Level** 

**Figure 5. Saturation Voltage vs. VGE                          Figure 6. Saturation Voltage vs. VGE** 

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## **Typical Performance Characteristics** 

- 10 110 30 ty) 25 50 75 100 Collector-Emitter Voltage, Vce [V] Gate Charge, Q, [nC] 

- **Figure 9. Turn-on Characteristics vs.                         Figure 10. Turn-off Characteristics vs. Gate Resistance                                                              Gate Resistance** 

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## **Typical Performance Characteristics** 

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Figure 13. Turn-off Characteristics vs.                           Figure 14. Switching Loss vs.<br>                  Collector Current                                                              Collector Current<br>**----- End of picture text -----**<br>


**Figure 17. Forward Characteristics                                                            Figure 18. Reverse Recovery Current** 

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## **Typical Performance Characteristics** 

**Figure 19. Reverse Recovery Time                                 Figure 20. Stored Charge** 

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**Figure 21.Transient Thermal Impedance of IGBT** 

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PDM<br>H<br>t1<br>"| i—<_ t \ 2 «»<br>Duty Factor, D<br>10"<br>PDM<br>t1<br>+ t | 2<br>**----- End of picture text -----**<br>


**Figure 22.Transient Thermal Impedance of Diode** 

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## **Mechanical Dimensions** 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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