# IGBT, 120 A, 2.1 V, 349 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3615782/)

**URL**: https://novapart.co/products/FGH60T65SHD-F155/igbt-120-a-21-v-349-w-650-to-247-3-pins
**SKU**: FGH60T65SHD-F155
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.8800
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 349W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 120A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3615782/)

**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** 

## IGBT – Field Stop, Trench 

## **650 V, 60 A** 

## FGH60T65SHD 

## **Description** 

Using novel field stop IGBT technology, **onsemi** ’s new series of field stop 3[rd] generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. 

## **Features** 

- Maximum Junction Temperature: TJ = 175 °C 

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C<br>G<br>E<br>**----- End of picture text -----**<br>


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E<br>C<br>G<br>TO-247-3LD<br>CASE 340CH<br>**----- End of picture text -----**<br>


- Positive Temperature Co-efficient for Easy Parallel Operating 

- High Current Capability 

- Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 60 A 

## **MARKING DIAGRAM** 

- 100% of the Parts Tested for ILM (Note 1) 

- High Input Impedance 

- Fast Switching 

- Tighten Parameter Distribution 

- This Device is Pb-Free and is RoHS Compliant 

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&Z&3&K<br>FGH60T65<br>SHD<br>**----- End of picture text -----**<br>


## **Applications** 

- Solar Inverter, UPS, Welder, Telecom, ESS, PFC 

&Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH60T65SHD = Specific Device Code 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 

Publication Order Number: **FGH60T65SHD/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **April, 2026 − Rev. 4** 

**FGH60T65SHD** 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**||||
|---|---|---|---|---|
|**Description**||**Symbol**|**FGH60T65SHD-F155**|**Unit**|
|Collector to Emitter Voltage<br>~~a~~||VCES<br>~~a~~|650<br>~~a~~|V<br>~~a~~|
|Gate to Emitter Voltage<br>~~a~~||VGES<br>~~a~~<br>~~ee~~|±20<br>~~a~~|V<br>~~a~~|
|Transient Gate to Emitter Voltage<br>~~a~~<br>~~ee~~|||±30<br>~~a~~|V<br>~~a~~|
|Collector Current<br>~~———~~|TC= 25°C<br>~~———~~<br>~~ee~~|IC<br>~~———~~<br>~~ee~~|120<br>~~———~~|A<br>~~———~~|
|Collector Current<br>~~———~~|TC= 100°C<br>~~———~~<br>~~ee~~||60<br>~~———~~|A<br>~~———~~|
|Pulsed Collector Current (Note 1)<br>~~———~~|TC= 25°C<br>~~———~~<br>~~ee~~|ILM<br>~~———~~<br>~~ee~~|180<br>~~———~~|A<br>~~———~~|
|Pulsed Collector Current (Note 2)<br>~~ee~~||ICM<br>~~ee~~|180|A|
|Diode Forward Current|TC= 25°C|IF|60|A|
|Diode Forward Current|TC= 100°C<br>~~ee~~||30|A|
|Pulsed Diode Maximum Forward Current (Note 2)<br>~~ee~~||IFM|180|A|
|Maximum Power Dissipation<br>~~es~~|TC= 25°C<br>~~es~~<br>~~ee~~|PD<br>~~es~~|349<br>~~es~~|W<br>~~es~~|
|Maximum Power Dissipation<br>~~es~~|TC= 100°C<br>~~es~~<br>~~ee~~||174<br>~~es~~|W<br>~~es~~|
|Operating Junction Temperature<br>~~es~~<br>~~ee~~||TJ<br>~~es~~|−55 to +175<br>~~es~~|°C<br>~~es~~|
|Storage Temperature Range<br>~~ee~~||Tstg|−55 to +175|°C|
|Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds||TL|300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

2. Repetitive Rating: Pulse width limited by max. junction temperature. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**FGH60T65SHD-F155**|**Unit**|
|Thermal Resistance, Junction to Case, Max. (IGBT)|R JC|0.43|°C/W|
|Thermal Resistance, Junction to Case, Max. (Diode)|R JC|1.25|°C/W|
|Thermal Resistance, Junction to Ambient, Max.|R JA|40|°C/W|



|**PACKAGE MARKING AND ORDERING INFORMATION**<br>**Device**<br>**Device Marking**<br>**Package**<br>**Packing Method**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FGH60T65SHD-F155<br>FGH60T65SHD<br>TO-247-3LD<br>Tube<br>−<br>−<br>30<br>~~a~~<br>~~ee~~|**PACKAGE MARKING AND ORDERING INFORMATION**<br>**Device**<br>**Device Marking**<br>**Package**<br>**Packing Method**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FGH60T65SHD-F155<br>FGH60T65SHD<br>TO-247-3LD<br>Tube<br>−<br>−<br>30<br>~~a~~<br>~~ee~~|**PACKAGE MARKING AND ORDERING INFORMATION**<br>**Device**<br>**Device Marking**<br>**Package**<br>**Packing Method**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FGH60T65SHD-F155<br>FGH60T65SHD<br>TO-247-3LD<br>Tube<br>−<br>−<br>30<br>~~a~~<br>~~ee~~|**PACKAGE MARKING AND ORDERING INFORMATION**<br>**Device**<br>**Device Marking**<br>**Package**<br>**Packing Method**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FGH60T65SHD-F155<br>FGH60T65SHD<br>TO-247-3LD<br>Tube<br>−<br>−<br>30<br>~~a~~<br>~~ee~~|**PACKAGE MARKING AND ORDERING INFORMATION**<br>**Device**<br>**Device Marking**<br>**Package**<br>**Packing Method**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FGH60T65SHD-F155<br>FGH60T65SHD<br>TO-247-3LD<br>Tube<br>−<br>−<br>30<br>~~a~~<br>~~ee~~|
|---|---|---|---|---|
|**ELECTRICAL CHARACTERISTICS OF THE IGBT**(TC= 25°C unless otherwise noted)|||||
|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~a~~<br>~~GG~~|||||
|Collector to Emitter Breakdown Voltage<br>BVCES<br>VGE= 0 V, IC= 1 mA<br>650||−||−<br>V|
|Temperature Coefficient of Breakdown<br>BVCES/ TJ<br>IC= 1 mA, Referenced to 25°C||0.6||V/°C|
|Voltage|||||
|Collector Cut-Off Current<br>ICES<br>VCE= VCES, VGE= 0 V<br>−||−||250<br>A|
|G−E Leakage Current<br>IGES<br>VGE= VGES, VCE= 0 V<br>−||−||±400<br>nA|
|**ON CHARACTERISTICS**|||||
|G−E Threshold Voltage<br>VGE(th)<br>IC= 60 mA, VCE= VGE<br>4.0<br>5.5<br>7.5<br>V<br>Collector to Emitter Saturation Voltage<br>VCE(sat)<br>IC= 60 A, VGE= 15 V<br>−<br>1.6<br>2.1<br>V<br>IC= 60 A, VGE= 15 V, TC= 175°C<br>−<br>2.14<br>−<br>V<br>~~SS~~|||||



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## **FGH60T65SHD** 

## **ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) (continued) 

|**Parameter**<br>**Unit**<br>**Max**<br>**Typ**<br>**Min**<br>**Test Conditions**<br>**Symbol**<br>**DYNAMIC CHARACTERISTICS**<br>~~a~~|
|---|
|Input Capacitance<br>Cies<br>VCE= 30 V, VGE= 0 V, f = 1 MHz<br>−<br>2980<br>−<br>pF|
|Output Capacitance<br>Coes<br>−<br>110<br>−<br>pF|
|Reverse Transfer Capacitance<br>Cres<br>−<br>36<br>−<br>pF|
|**SWITCHING CHARACTERISTICS**|
|Turn-On Delay Time<br>td(on)<br>VCC= 400 V, IC= 60 A,<br>RG= 6<br>VGE= 15 V,<br>Inductive Load, TC= 25°C<br>−<br>26<br>−<br>ns<br>Rise Time<br>tr<br>−<br>48<br>−<br>ns<br>Turn-Off Delay Time<br>td(off)<br>−<br>87<br>−<br>ns<br>Fall Time<br>tf<br>−<br>47<br>−<br>ns<br>Turn-On Switching Loss<br>Eon<br>−<br>1.69<br>−<br>mJ<br>Turn-Off Switching Loss<br>Eoff<br>−<br>0.63<br>−<br>mJ<br>Total Switching Loss<br>Ets<br>−<br>2.32<br>−<br>mJ<br>Turn-On Delay Time<br>td(on)<br>VCC= 400 V, IC= 60 A,<br>RG= 6<br>VGE= 15 V,<br>Inductive Load, TC= 175°C<br>−<br>25<br>−<br>ns<br>Rise Time<br>tr<br>−<br>60<br>−<br>ns<br>Turn-Off Delay Time<br>td(off)<br>−<br>93<br>−<br>ns<br>Fall Time<br>tf<br>−<br>72<br>−<br>ns<br>Turn-On Switching Loss<br>Eon<br>−<br>2.54<br>−<br>mJ<br>Turn-Off Switching Loss<br>Eoff<br>−<br>1.04<br>−<br>mJ<br>Total Switching Loss<br>Ets<br>−<br>3.58<br>−<br>mJ<br>Total Gate Charge<br>Qg<br>VCC= 400 V, IC= 60 A,<br>VGE= 15 V<br>−<br>102<br>−<br>nC<br>Gate to Emitter Charge<br>Qge<br>−<br>18.4<br>−<br>nC<br>Gate to Collector Charge<br>Qgc<br>−<br>37.5<br>−<br>nC<br>~~po~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>**e**<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee ee~~<br>~~a~~<br>~~ee ee~~<br>~~a~~<br>~~ee~~<br>~~**ee**~~<br>~~**a**~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>**e**<br>~~a~~<br>~~ee ee~~<br>~~a~~<br>~~ee ee~~<br>~~a~~<br>~~ee ee~~<br>~~a~~<br>~~ee ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee ee~~<br>~~a~~<br>~~ee~~<br>~~**ee**~~<br>~~**a** ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~|
|**ELECTRICAL CHARACTERISTICS OF THE DIODE**(TC= 25°C unless otherwise noted)|
|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>Diode Forward Voltage<br>VFM<br>IF= 30 A<br>TC= 25°C<br>−<br>2.3<br>2.7<br>V<br>TC= 175°C<br>−<br>1.9<br>−<br>Reverse Recovery Energy<br>Erec<br>IF= 30 A,<br>dIF/dt = 200 A/ s<br>TC= 175°C<br>−<br>50<br>−<br>J<br>Diode Reverse Recovery Time<br>trr<br>TC= 25°C<br>−<br>34.6<br>−<br>ns<br>TC= 175°C<br>−<br>197<br>−<br>Diode Reverse Recovery Charge<br>Qrr<br>TC= 25°C<br>−<br>58.6<br>−<br>nC<br>TC= 175°C<br>−<br>810<br>−<br>Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~**r**s~~<br>~~ee ee ee~~<br>~~ee ee~~<br>~~s~~<br>~~ee ee eee~~<br>~~re~~<br>~~rs~~<br>~~ee ee ee~~<br>~~ed~~<br>~~ee~~<br>~~eeee~~|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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wt my<br>90pfi<br>po<br>30 fo) Ao<br>py4<br>0 0 1 2 3 4 5<br>VCE, Collector-Emitter Voltage (V)<br>, Collector Current (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 1. Typical Output Characteristics** 

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|90CaI N e<br>fone) /oeeeee<br>fw A<br>30o UL f/<br>0[>1Aneeeeeee2 3 4 5<br>VCE, Collector-Emitter Voltage (V)<br>, Collector Current (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 2. Typical Output Characteristics** 

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. Te = 175°C... [ysF<br>. on ey<br>7<br>je<br>0 1 2 3<br>VCE, Collector-Emitter Voltage (V)<br>Figure 3. Typical Saturation Voltage<br>Characteristics<br>20<br>Common<br>T, = 26°C<br>;PP<br>2s ea<br>°4 8 12 16<br>VGE, Gate-Emitter Voltage (V)<br>, Collector Current (A)<br>IC<br>, Collector-Emitter Voltage (V)<br>CE<br>V<br>**----- End of picture text -----**<br>


**Figure 3. Typical Saturation Voltage Characteristics** 

**Figure 5. Saturation Voltage vs VGE** 

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Vo = 15V<br>;2.5Ee4<br>eee<br>eae<br>one<br>50 0 50 100<br>TC, Case Temperature ( ° C)<br>, Collector-Emitter Voltage (V)<br>CE<br>V<br>**----- End of picture text -----**<br>


**Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level** 

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To = 175°C<br>;<br>=<br>° 4 8 12 16<br>VGE, Gate-Emitter Voltage (V)<br>, Collector-Emitter Voltage (V)<br>CE<br>V<br>**----- End of picture text -----**<br>


**Figure 6. Saturation Voltage vs VGE** 

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## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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1000<br>\<br>Common Emitter<br>Voe = OV, f = 1MHz<br>To = 25°C<br>10<br>1 10<br>VCE, Collector-Emitter Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Characteristics** 

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|<br>V<br>| GF<br>6 fj,<br>3<br>0<br>0 20 40 60 80<br>Qg, Gate Charge (nC)<br>, Gate-Emitter Voltage (V)<br>GE<br>V<br>**----- End of picture text -----**<br>


**Figure 8. Gate Charge Characteristics** 

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me y VecCommon= 400V,<br>Ic = 60A<br>Tc _=25C0<br>10 a<br>0 10 20 30<br>RG, Gate Resistance ( )<br>Resistance<br>pesesees<br>1 5 Eo ann<br>Common<br>VocI, = 60A = 400V,<br>Ty = 25°C<br>Te = 178°C...<br>0 10 20 30<br>RG, Gate Resistance ( Q )<br>Switching Time (ns)<br>Switching Loss (mJ)<br>**----- End of picture text -----**<br>


**Figure 9. Turn-On Characteristics vs. Gate Resistance** 

**Figure 11. Switching Loss vs. Gate Resistance** 

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**----- Start of picture text -----**<br>
Common Emitter<br>Voc = 400V, Vee = 15V<br>Ic = 60A<br>_<br>40 To =25Cto —<br>5 —<br>0 10 20 30 40 50<br>RG, Gate Resistance ( )<br>Figure 10. Turn-Off Characteristics vs. Gate<br>Resistance<br>100TTT- alll2<br>4<br>Lo r |.<br>vA VoeCommon= 15V, EmitterRe = 62<br>10 Ty = 25°C —<br>Tg = 175°C...<br>20 40 60 80 100 120 140 160<br>IC, Collector Current (A)<br>Switching Time (ns)<br>Switching Time (ns)<br>**----- End of picture text -----**<br>


**Figure 12. Turn-On Characteristics vs. Collector Current** 

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**TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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Common<br>Voce =<br>10 To=<br>Te =<br>4<br>20 40 60 80<br>IC, Collector Current (A)<br>Switching Time (ns)<br>**----- End of picture text -----**<br>


**Figure 13. Turn-Off Characteristics vs. Collector Current** 

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**----- Start of picture text -----**<br>
Vog = 15/0V, Rg = 62<br>100 | ANS<br>= \)<br>T, °<br> = 100°C XQ<br>0<br>1k 10k 100k<br>f, Switching Frequency (Hz)<br>, Collector Current (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 15. Load Current vs. Frequency** 

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10 i,<br>T.<br>1 2 3 4<br>VF, Forward Voltage (V)<br>, Forward Current (A)<br>IF<br>**----- End of picture text -----**<br>


**Figure 17. Forward Characteristics** 

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Common<br>Veg = 15V,<br>To 25°C<br>Te = 175°C<br>01 ——<br>20 40 60 80<br>IC, Collector Current (A)<br>Switching Loss (mJ)<br>**----- End of picture text -----**<br>


**Figure 14. Switching Loss vs. Collector Current** 

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**----- Start of picture text -----**<br>
10 10 ms, a<br>DOS],<br>1} yn . ws<br>otes:<br>°<br>2.1. ToTy == 25°C175°C<br>3. Single Pulse<br>0.1<br>1 10 100<br>VCE, Collector-Emitter Voltage (V)<br>, Collector Current (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 16. SOA Characteristics** 

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**----- Start of picture text -----**<br>
Tg<br>___ dildt = 100A/us<br>di/dt = 200A/us<br>3 A Rar<br>_avat= 100m<br>0 20 40 60<br>IF, Forward Current (A)<br>, Reverse Recovery Current (A)<br>Irr<br>**----- End of picture text -----**<br>


**Figure 18. Reverse Recovery Current** 

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**TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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**----- Start of picture text -----**<br>
Ty == 175°C0, —_<br>7<br>-<br>.pope TN<br>me<br>100 ° ue difdt=200A/ps\ , — di/dt<br>3eyee e<br>) 20 40<br>IF, Forward Current (A)<br>, Reverse Recovery Time (ns)<br>trr<br>**----- End of picture text -----**<br>


**Figure 19. Reverse Recovery Time** 

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**----- Start of picture text -----**<br>
goo | te = 1750,¢ —<br>oe<br>” : °<br>400 ee \<br>ildt = mi difdt =|<br>”3 pot7ff|<br>0 20 40 60<br>IF, Forward Current (A)<br>, Stored Recovery Charge (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br>


**Figure 20. Stored Charge** 

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**----- Start of picture text -----**<br>
© 0.5 a<br>0.1 koe | -—<br>0.1 Yo<br>PDM<br>0.05 ¢<br>t1<br>0.020.01a | <= t | 2 <<br>0.01 : Duty Factor, D<br>0.005 single pulse Seated peers Peak T, = Pdm<br>10° 10° 10° 10? 10"<br>Rectangular Pulse Duration (sec)<br>Figure 21. Transient Thermal Impedance of IGBT<br>°<br>0.1 0.05 fr PDM 4<br>0.02 o | t1 |<<br>0.01 t2<br>Sf. Duty Factor, D<br>single pulse Peak Tj = Pdm<br>0.04<br>10° 10° 10° 10” 10"<br>Rectangular Pulse Duration (sec)<br>jc)<br>Thermal Response (Z<br>jc)<br>Thermal Response (Z<br>**----- End of picture text -----**<br>


**Figure 22. Transient Thermal Impedance of Diode** 

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## **REVISION HISTORY** 

|**Revision**<br>**Description of Changes**<br>**Date**<br>4<br>Document rebranded to**onsemi**format.<br>4/21/2026<br>This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made<br>~~—~~|
|---|
|on the noted approval dates.|



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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−247−3LD** CASE 340CH ISSUE A 

DATE 09 OCT 2019 

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GENERIC<br>MARKING DIAGRAM*<br>XXXXXXXXX<br>AYWWG XXXX = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ � ”, may<br>or may not be present. Some products may<br>not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13853G Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−247−3LD PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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© Semiconductor Components Industries, LLC, 2016 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales 

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## Links

- [View this product on Novapart](https://novapart.co/products/FGH60T65SHD-F155/igbt-120-a-21-v-349-w-650-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/on-semiconductor/fgh60t65shd-f155/igbt-650-v-60-a-field-stop-trench/dp/3615782)
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