# IGBT, 120 A, 1.8 V, 600 W, 600 V, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:3368687/) **URL**: https://novapart.co/products/FGH60N60SMD-F085/igbt-120-a-18-v-600-w-to-247-3-pins **SKU**: FGH60N60SMD-F085 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €2.6500 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 600W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 175°C | | Continuous Collector Current | 120A | | Collector Emitter Voltage Max | 600V | | Automotive Qualification Standard | AEC-Q101 | | Collector Emitter Saturation Voltage | 1.8V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3368687/) IGBT - Field Stop 600 V, 60 A ## FGH60N60SMD-F085 ## **Description** Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. ## **Features** - Maximum Junction Temperature: TJ = 175°C - Positive Temperature Co−efficient for easy Parallel Operating - High Current Capability - Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A - High Input Impedance - Tightened Parameter Distribution - This Device is Pb−Free and is RoHS Compliant - Qualified to Automotive Requirements of AEC−Q101 ## **Applications** - Automotive Chargers, Converters, High Voltage Auxiliaries - Solar Inverters, UPS, SMPS, PFC **www.onsemi.com** **==> picture [117 x 236] intentionally omitted <==** **----- Start of picture text -----**
VCES IC
600 V 60 A
C
G
< E
E
C
G
COLLECTOR
= a
(FLANGE)
TO−247−3LD
CASE 340CK
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## **MARKING DIAGRAM** $Y&Z&3&K FGH60N60 SMD **==> picture [167 x 48] intentionally omitted <==** **----- Start of picture text -----**
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH60N60SMD = Specific Device Code
**----- End of picture text -----**
## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: **FGH60N60SMD−F085/D** **1** © Semiconductor Components Industries, LLC, 2013 **January, 2020 − Rev. 4** **FGH60N60SMD−F085** ## **ABSOLUTE MAXIMUM RATINGS** |**Symbol**|**Description**||**Ratings**|**Unit**| |---|---|---|---|---| |VCES|Collector to Emitter Voltage||600|V| |VGES|Gate to Emitter Voltage||±20|V| |IC|Collector Current|TC= 25°C|120|A| |||TC=100°C|60|A| |ICM(Note 1)|Pulsed Collector Current||180|A| |IF|Diode Forward Current|TC=25°C|60|A| |||TC = 100°C|30|A| |IFM(Note 1)|Pulsed Diode Maximum Forward Current||180|A| |PD|Maximum Power Dissipation|TC=25°C|600|W| |||TC = 100°C|300|W| |TJ|Operating Junction Temperature||−55 to +175|°C| |TSTG|Storage Temperature Range||−55 to +175|°C| |TL|Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds||300|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. ## **THERMAL CHARACTERISTICS** |**Symbol**|**Parameter**|**Max.**|**Unit**| |---|---|---|---| |R�JC(IGBT)
(Note 2)|Thermal Resistance, Junction to Case|0.25|�C/W| |R�JC(Diode)|Thermal Resistance, Junction to Case|1.1|�C/W| |R�JA|Thermal Resistance, Junction to Ambient (PCB Mount) (Note 2)|45|�C/W| 2. Rthjc for TO−247 : according to Mil standard 883−1012 test method. Rthja for TO−247 : according to JESD51−2, test method environmental condition and JESD51−10, test boards for through hole perimeter leaded package thermal measurements. JESD51−3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package. ## **PACKAGE MARKING AND ORDERING INFORMATION** |**Device Marking**|**Device**|**Package**|**Packing Method**|**Qty per Tube**| |---|---|---|---|---| |FGH60N60SMD|FGH60N60SMD−F085|TO−247|Tube|30ea| **www.onsemi.com** **2** **FGH60N60SMD−F085** ## **ELECTRICAL CHARACTERISTICS OF THE IGBT** |**ELECTRICAL**|**CHARACTERISTICS OF THE IGBT**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |**OFF CHARACTERISTICS**||||||| |BVCES|Collector to Emitter Breakdown Voltage|VGE= 0 V, IC= 250�A|600|−|−|V| |�BVCES/�TJ|Temperature Coefficient of Breakdown Voltage|VGE= 0 V, IC= 250�A|−|0.22|−|V/°C| |ICES|Collector Cut−Off Current|VCE= VCES, VGE= 0 V|−|−|250|�A| |||ICESat 80 % *BVCES, 175°C|−|−|1100|| |IGES|G−E Leakage Current|VGE= VGES, VCE= 0 V|−|−|±400|nA| |**ON CHARACTERISTICS**||||||| |VGE(th)|G−E Threshold Voltage|IC= 250�A, VCE= VGE|3.5|4.7|6.0|V| |VCE(sat)|Collector to Emitter Saturation Voltage|IC= 60 A, VGE= 15 V,|−|1.8|2.5|V| |||IC= 60 A, VGE= 15 V,
TC= 175°C|−|2.14|−|V| |**DYNAMIC CHARACTERISTICS**||||||| |Cies|Input Capacitance|VCE= 30 V, VGE= 0 V,
f = 1 MHz|−|2780|3700|pF| |Coes|Output Capacitance||−|260|345|pF| |Cres|Reverse Transfer Capacitance||−|80|110|pF| |**SWITCHING CHARACTERISTICS**||||||| |Td(on)|Turn−On Delay Time|VCC= 400 V, IC= 60 A,
RG= 3�, VGE= 15 V,
Inductive Load, TC= 25°C|−|22|29|ns| |Tr|Rise Time||−|46|60|ns| |Td(off)|Turn−Off Delay Time||−|116|151|ns| |Tf|Fall Time||−|14|18|ns| |Eon|Turn−On Switching Loss||−|1.59|2.23|mJ| |Eoff|Turn−Off Switching Loss||−|0.39|0.55|mJ| |Ets|Total Switching Loss||−|1.98|2.78|mJ| |Td(on)|Turn−On Delay Time|VCC= 400 V, IC= 60 A,
RG= 3�, VGE= 15 V,
Inductive Load, TC= 175°C|−|22|28|ns| |Tr|Rise Time||−|44|58|ns| |Td(off)|Turn−Off Delay Time||−|124|161|ns| |Tf|Fall Time||−|15|20|ns| |Eon|Turn−On Switching Loss||−|2.41|3.13|mJ| |Eoff|Turn−Off Switching Loss||−|1.08|1.42|mJ| |Ets|Total Switching Loss||−|3.49|4.55|mJ| |Qg|Total Gate Charge|VCE= 400 V, IC= 60 A,
VGE= 15 V|−|187|280|nC| |Qge|Gate to Emitter Charge||−|20|29|nC| |Qgc|Gate to Collector Charge||−|92|138|nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **3** **FGH60N60SMD−F085** ## **ELECTRICAL CHARACTERISTICS OF THE DIODE** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL**|**CHARACTERISTICS OF THE DIO**|**DE**(TC= 25°C unless otherwise noted)|**DE**(TC= 25°C unless otherwise noted)||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**| |VFM|Diode Forward Voltage|IF= 30 A|TC= 25°C|−|2.1|2.7|V| ||||TC= 175°C|−|1.48|−|| |Trr|Diode Reverse Recovery Time|IF= 30 A,
dIF/dt = 200 A/�s|TC= 25°C|−|33|42|ns| ||||TC= 175°C|−|115|−|| |Qrr|Diode Reverse Recovery Charge||TC= 25°C|−|53|69|nC| ||||TC= 175°C|−|606|−|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **4** **FGH60N60SMD−F085** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [195 x 173] intentionally omitted <==** **----- Start of picture text -----**
180
VGE=20V 15V
12V 10V
120
60 8V
TC = 25oC
0
0 2 4 6 8 10
Collector−Emitter Voltage, VCE (V)
(A)
C
Collector Current, I
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**Figure 1. Typical Output Characteristics** **==> picture [196 x 173] intentionally omitted <==** **----- Start of picture text -----**
180
VGE=20V 15V 12V
120
10V
60
8V
TC = 175oC
0
0 2 4 6 8 10
Collector−Emitter Voltage, VCE (V)
(A)
C
Collector Current, I
**----- End of picture text -----**
**Figure 2. Typical Output Characteristics** **==> picture [194 x 392] intentionally omitted <==** **----- Start of picture text -----**
180
120
60
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
0
0 1 2 3 4 5
Collector−Emitter Voltage, VCE (V)
Figure 3. Typical Saturation
Voltage Characteristics
4
Common Emitter
VGE [ = 15V]
120A
3
60A
2
IC = 30A
1
25 50 75 100 125 150 175
Collector−Emitter Case Temperature, TC ( � C)
(A)
C
Collector Current, I
(V)
CE
Collector−Emitter Voltage, V
**----- End of picture text -----**
**Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level** **==> picture [201 x 389] intentionally omitted <==** **----- Start of picture text -----**
120
Common Emitter
VCE = 20 V
TC = 25oC
90 TC = 175 o C
60
30
0
0 4 8 12
Gate−Emitter Voltage,VGE (V)
Figure 4. Transfer Characteristics
20
Common Emitter
TC = −40oC
16
120A
12
60A
8
IC = 30A
4
0
4 8 12 16 20
Gate−Emitter Voltage, VGE (V)
(A)
C
Collector Current, I
(V)
CE
Collector−Emitter Voltage, V
**----- End of picture text -----**
**Figure 6. Saturation Voltage vs. VGE** **www.onsemi.com** **5** **FGH60N60SMD−F085** ## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) **==> picture [192 x 168] intentionally omitted <==** **----- Start of picture text -----**
20
Common Emitter
TC = 25oC
16
120A
12
60 A
8
IC = 30A
4
0
4 8 12 16 20
Gate−Emitter Voltage, VGE (V)
(V)
CE
Collector−Emitter Voltage, V
**----- End of picture text -----**
**Figure 7. Saturation Voltage vs. VGE** **==> picture [196 x 169] intentionally omitted <==** **----- Start of picture text -----**
10000
Cies
1000
Coes
Common Emitter
100 V GE = 0V, f = 1MHz Cres
TC = 2 5oC
50
11 0 30
Collector−Emitter Voltage, VCE (V)
Capacitance (pF)
**----- End of picture text -----**
**Figure 9. Capacitance Characteristics** **==> picture [189 x 386] intentionally omitted <==** **----- Start of picture text -----**
20
Common Emitter
TC = 175oC
16
120A
12
60 A
8
IC = 30A
4
0
4 8 12 16 20
Gate−Emitter Voltage, VGE(V)
Figure 8. Saturation Voltage vs. VGE
15
12
VCC = 100V 300V
9
200V
6
3
Common Emitter
TC = 25oC
0
0 50 100 150 200
Gate Charge, Qg(nC)
(V)
CE
Collector−Emitter Voltage, V
(V)
GE
Gate−Emitter Voltage, V
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**Figure 10. Gate Charge Characteristics** **==> picture [194 x 169] intentionally omitted <==** **----- Start of picture text -----**
300
100 10 � s
100 � s
10 10 ms
1ms
DC
1 *Notes:
1. TC = 25 [o] C
2. TJ � 175 [o] C
3. Single Pulse
0.1
1 10 100 1000
Collector−Emitter Voltage, VCE (V)
(A)
C
Collector Current, I
**----- End of picture text -----**
**==> picture [196 x 170] intentionally omitted <==** **----- Start of picture text -----**
1000
Common Em i tter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
tr
100
td(on)
10
0 10 20 30 40 50
Gate Resistance, RG ( � )
Switching Time (ns)
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**Figure 11. SOA Characteristics** **Figure 12. Turn−on Characteristics vs. Gate Resistance** **www.onsemi.com** **6** **FGH60N60SMD−F085** ## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) **==> picture [203 x 390] intentionally omitted <==** **----- Start of picture text -----**
10000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
1000 TC = 175 o C td(off)
100 tf
10
0 10 20 30 40 50
Gate Resistance, RG ( � )
Figure 13. Turn−off Characteristics
vs. Gate Resistance
1000
td(off)
100
tf
10 C ommon Emitter
VGE = 15V, RG = 3 �
TC = 25oC
TC = 175oC
1
0 30 60 90 120 150
Collector Current, IC (A)
Switching Time (ns)
Switching Time (ns)
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**==> picture [200 x 198] intentionally omitted <==** **----- Start of picture text -----**
Figure 15. Turn−off Characteristics vs.
Collector Current
50
Common Emitter
VGE = 15V, RG = 3 �
TC = 25oC
10 TC = 175oC
Eon
1
E
off
0.1
0 30 60 90 120 150
Collector Current, IC (A)
Switching Loss (mJ)
**----- End of picture text -----**
**==> picture [203 x 172] intentionally omitted <==** **----- Start of picture text -----**
500
100
tr
td(on)
10
Commo n Emitter
VGE = 15V, RG = 3 �
TC = 25oC
TC = 175oC
1
0 30 60 90 120 150
Collector Current, IC (A)
Switching Time (ns)
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**Figure 14. Turn−on Characteristics vs. Collector Current** **==> picture [199 x 386] intentionally omitted <==** **----- Start of picture text -----**
10
Eon
1
Eoff Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
0.1
0 10 20 30 40 50
Gate Resistance, RG ( � )
Figure 16. Switching Loss vs.
Gate Resistance
300
100
10
Safe Operating Area
o
VGE = 15V, TC � 175 C
1
1 10 100 1000
Collector−Emitter Voltage, VCE (V)
Switching Loss (mJ)
(A)
C
Collector Current, I
**----- End of picture text -----**
**Figure 17. Switching Loss vs. Collector Current** **Figure 18. Turn Off Switching SOA Characteristics** **www.onsemi.com** **7** **FGH60N60SMD−F085** ## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) **==> picture [191 x 172] intentionally omitted <==** **----- Start of picture text -----**
200
100
TC = 175oC
10 TC = 125oC
TC = 75oC
TC = 25oC
1
0 1 2 3 4
Forward Voltage, VF (V)
(A)
F
Forward Current, I
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**Figure 19. Forward Characteristics** **==> picture [197 x 171] intentionally omitted <==** **----- Start of picture text -----**
15
TC = 25oC
12 T C = 175oC
di/dt = 200A/ � s
9
100A/ � s
6
di/dt = 200A/ � s
3
100A/ � s
0
0 60 60 60
Forward Current, IF (A)
(A)
rr
Reverse Current, I
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**Figure 20. Reverse Recovery Current** **==> picture [200 x 174] intentionally omitted <==** **----- Start of picture text -----**
800
TC = 25oC
TC = 175oC 200A/ � s
600
di/dt = 100A/ � s
400
200
200A/ � s di/dt = 100A/ � s
0
0 20 40 60
Forward Current, IF (A)
(nC)
rr
Stored Recovery Charge, Q
**----- End of picture text -----**
**==> picture [362 x 368] intentionally omitted <==** **----- Start of picture text -----**
200
TC = 25oC
200A/ � s TC = 175oC di/dt = 100A/ � s
150
di/dt = 100A/ � s
100 200A/ � s
di/dt = 100A/ � s
50
� s di/dt = 100A/ � s
200A/ � s
0
40 60 0 20 40 60
F (A)(A) Forward Current, IF (A)
Figure 22. Reverse Recovery Time
0.5
0.5
0.1
0.2
0.1
0.05
0.01 0.02 PDM
0.01 t1
single pulse t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E−3
1E−5 1E−4 1E−3 0.01 0.1
Rectangular Pulse Duration (sec)
(ns)
rr
Reverse Recovery Time, T
Thermal Response (Zthjc)
**----- End of picture text -----**
**Figure 21. Stored Charge** **Figure 23. Transient Thermal Impedance of IGBT** **www.onsemi.com** **8** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [116 x 29] intentionally omitted <==** **----- Start of picture text -----**
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
**----- End of picture text -----**
DATE 31 JAN 2019 A P1 | A E A2 @ P 0) D2 ~~1 + _~~ Q E2 ) ! S C ~~R OG )~~ D1 D B E1 2 1 2 3 ~~|~~ Oo | ~~N77~~ L1 A1 b4 L c (3X) b (2X) b2 0.25[M] B A[M] MILLIMETERS (2X) e DIM MIN NOM MAX A ~~eee~~ A 4.58 4.70 4.82 NOTES: UNLESS OTHERWISE SPECIFIED. ~~|~~ A1 2.20 2.40 2.60 A. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD ~~a~~ A2 1.40 ~~ee~~ 1.50 ~~ee~~ 1.60 ~~ee~~ b 1.17 1.26 1.35 ©. FLASH,DRAWING ANDCONFORMS TIE BAR EXTRUSIONS.TO ASME Y14.5 - 2009. ~~eeee~~ b2 1.53 ~~ee~~ 1.65 ~~ee~~ 1.77 D. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BYL1. ~~[—~~ b4 ~~[|~~ 2.42 2.54 ~~ss~~ 2.66 c 0.51 0.61 0.71 E. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. ~~ee ee ee eee~~ **GENERIC** D 20.32 20.57 20.82 **MARKING DIAGRAM*** ~~ee ee ee ee~~ D1 13.08 ~ ~ ~~ee ee eee eee~~ AYWWZZ ~~ee~~ D2 ~~ee~~ 0.51 0.93 1.35 XXXXXXX ~~a~~ E ~~ee~~ 15.37 15.62 15.87 ~~eee~~ XXXXXXX ~~a~~ E1 ~~ee~~ 12.81 ~ ~~eee~~ ~ ~~a~~ E2 ~~ee~~ 4.96 5.08 ~~eee~~ 5.20 XXXX = Specific Device Code ~~a~~ e ~~ee~~ ~ 5.56 ~~eee~~ ~ A = Assembly Location Y = Year ~~ee~~ L ~~ee~~ 15.75 16.00 ~~**eee**~~ 16.25 WW = Work Week L1 3.69 3.81 3.93 ZZ = Assembly Lot Code P 3.51 3.58 3.65 *This information is generic. Please refer to ~~po |~~ ~~**|**~~ P1 6.60 6.80 7.00 device data sheet for actual part marking. ~~fo |~~ ~~**|**~~ Pb−Free indicator, “G” or microdot “ . ”, may ~~a~~ Q ~~ee~~ 5.34 5.46 5.58 or may not be present. Some products may not follow the Generic Marking. ~~a~~ S ~~ee~~ 5.34 5.46 eee 5.58 ~~ee~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13851G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ## **DOCUMENT NUMBER: 98AON13851G** **DESCRIPTION: TO−247−3LD SHORT LEAD** **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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