# IGBT, 100 A, 2.1 V, 268 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3615780/)

**URL**: https://novapart.co/products/FGH50T65SQD-F155/igbt-100-a-21-v-268-w-650-to-247-3-pins
**SKU**: FGH50T65SQD-F155
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.5700
**Stock**: 10+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 268W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3615780/)

**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ 

## IGBT - Field Stop, Trench 650 V, 50 A FGH50T65SQD 

## **Description** 

Using novel field stop IGBT technology, **onsemi** ’s new series of field stop 4[th] generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. 

## **Features** 

- Max Junction Temperature TJ = 175°C 

- Positive Temperature Co−efficient for Easy Parallel Operating 

- High Current Capability 

- Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 50 A 

- 100% of the Parts Tested for ILM 

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VCES IC<br>650 V 50 A<br>**----- End of picture text -----**<br>


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C<br>G<br>E<br>**----- End of picture text -----**<br>


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E<br>C<br>G<br>COLLECTOR<br>(FLANGE)<br>TO−247−3LD<br>CASE 340CH<br>**----- End of picture text -----**<br>


- High Input Impedance 

- Fast Switching 

## **MARKING DIAGRAM** 

- Tighten Parameter Distribution 

- This Device is Pb−Free and is RoHS Compliant 

## **Applications** 

- Solar Inverter, UPS, Welder, Telecom, ESS, PFC 

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$Y&Z&3&K<br>FGH50T65<br>SQD<br>|TT<br>**----- End of picture text -----**<br>


$Y = **onsemi** Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH50T65SQD = Specific Device Code 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **FGH50T65SQD/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **September, 2024 − Rev. 4** 

**FGH50T65SQD** 

## **ABSOLUTE MAXIMUM RATINGS** 

|**Symbol**<br>~~——————~~|**Description**<br>~~——————~~|**Description**<br>~~——————~~|**FGH50T65SQD−F155**<br>~~——————~~|**Unit**<br>~~——————~~|
|---|---|---|---|---|
|VCES<br>~~——————~~|Collector to Emitter Voltage<br>~~——————~~||650<br>~~——————~~|V<br>~~——————~~|
|VGES<br>~~——————~~<br>~~pf~~|Gate to Emitter Voltage<br>~~——————~~||±20<br>~~——————~~|V<br>~~——————~~|
||Transient Gate to Emitter Voltage<br>~~——————~~<br>~~pf~~||±30<br>~~——————~~<br>|V<br>~~——————~~<br>|
|IC<br>~~pf~~|Collector Current<br>~~pfpp~~|TC = 25°C<br>~~pp~~|100<br>~~pp~~|A<br>~~pp~~|
|||TC=100°C<br>~~pp~~|50<br>~~pp~~|A<br>~~pp~~|
|ILM(Note 1)<br>~~pf~~|Pulsed Collector Current<br>~~pfpp~~|TC=25°C<br>~~pp~~|200<br>~~pp~~|A<br>~~pp~~|
|ICM(Note 2)<br>~~pf~~|Pulsed Collector Current<br>~~pf~~||200<br>|A<br>|
|IF|Diode Forward Current|TC=25°C|50|A|
||Diode Forward Current|TC=100°C|30|A|
|IFM|Pulsed Diode Maximum Forward Current||200|A|
|PD<br>~~a~~|Maximum Power Dissipation<br>~~a~~|TC=25°C<br>~~a~~|268<br>~~a~~|W<br>~~a~~|
|||TC = 100°C<br>~~a~~|134<br>~~a~~|W<br>~~a~~|
|TJ<br>~~a~~|Operating Junction Temperature<br>~~a~~||−55 to +175<br>~~a~~|°C<br>~~a~~|
|TSTG|Storage Temperature Range||−55 to +175|°C|
|TL|Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds||300|°C|



2. Repetitive rating: Pulse width limited by max. junction temperature. 

**PACKAGE MARKING AND ORDERING INFORMATION Packing Part Number Top Mark Package Method Reel Size Tape Width Qty per Tube** FGH50T65SQD−F155 FGH50T65SQD TO−247−3LD Tube − − 30 ~~ee ee ee~~ 

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**2** 

## **FGH50T65SQD** 

**ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS OF THE IGBT**(TC = 25C = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS OF THE IGBT**(TC = 25C = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS OF THE IGBT**(TC = 25C = 25= 25°C unless otherwise noted)|
|---|---|---|
|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~a~~|||
|BVCES<br>Collector to Emitter Breakdown Voltage<br>VGE= 0 V, IC= 1 mA<br>650<br>−<br>−<br>V<br>~~a~~|||
|BVCES/ TJ<br>Temperature Coefficient of Breakdown Voltage<br>IC= 1 mA, Reference to 25°C<br>−<br>0.6<br>−<br>V/°C<br>~~CC~~|||
|ICES<br>Collector Cut−Off Current<br>~~a~~|VCE= VCES, VGE= 0 V|−<br>−<br>250<br>A|
|IGES<br>G−E Leakage Current<br>~~a~~|VGE= VGES, VCE= 0 V|−<br>−<br>±400<br>nA|
|**ON CHARACTERISTICS**|||
|VGE(th)<br>G−E Threshold Voltage|IC= 50 mA, VCE= VGE|2.6<br>4.5<br>6.4<br>V|
|VCE(sat)<br>Collector to Emitter Saturation Voltage|IC= 50 A, VGE= 15 V,|−<br>1.6<br>2.1<br>V|
||TC= 25°C||
||IC= 50 A, VGE= 15 V,<br>TC= 175°C|−<br>1.92<br>−<br>V|
|**DYNAMIC CHARACTERISTICS**|||
|Cies<br>Input Capacitance|VCE= 30 V, VGE= 0 V,|−<br>3275<br>−<br>pF|
||f = 1MHz||
|Coes<br>Output Capacitance||−<br>84<br>−<br>pF|
|Cres<br>Reverse Transfer Capacitance||−<br>12<br>−<br>pF|
|**SWITCHING CHARACTERISTICS**|||
|Td(on)<br>Turn−On Delay Time<br>VCC= 400 V, IC= 12.5 A,<br>RG= 4.7<br>VGE= 15 V,<br>Inductive Load, TC= 25°C<br>Tr<br>Rise Time<br>Td(off)<br>Turn−Off Delay Time<br>Tf<br>Fall Time<br>Eon<br>Turn−On Switching Loss<br>Eoff<br>Turn−Off Switching Loss<br>Ets<br>Total Switching Loss<br>Td(on)<br>Turn−On Delay Time<br>VCC= 400 V, IC= 25 A,<br>RG= 4.7<br>VGE= 15 V,<br>Inductive Load, TC= 25°C<br>Tr<br>Rise Time<br>Td(off)<br>Turn−Off Delay Time<br>Tf<br>Fall Time<br>Eon<br>Turn−On Switching Loss<br>Eoff<br>Turn−Off Switching Loss<br>Ets<br>Total Switching Loss<br>Td(on)<br>Turn−On Delay Time<br>VCC= 400 V, IC= 12.5 A,<br>RG= 4.7<br>VGE= 15 V,<br>Inductive Load, TC= 175°C<br>Tr<br>Rise Time<br>Td(off)<br>Turn−Off Delay Time<br>Tf<br>Fall Time<br>Eon<br>Turn−On Switching Loss<br>Eoff<br>Turn−Off Switching Loss<br>Ets<br>Total Switching Loss<br>~~aee~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~a ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~a ee~~<br>~~es~~<br>~~ee~~<br>~~a~~<br>~~**ee**~~<br>~~esee~~<br>~~re~~<br>~~ee~~<br>~~rs~~<br>~~ee~~||−<br>22<br>−<br>ns<br>−<br>8.7<br>−<br>ns<br>−<br>105<br>−<br>ns<br>−<br>2.5<br>−<br>ns<br>−<br>180<br>−<br>J<br>−<br>45<br>−<br>J<br>−<br>225<br>−<br>J<br>−<br>19<br>−<br>ns<br>−<br>13<br>−<br>ns<br>−<br>93<br>−<br>ns<br>−<br>6.4<br>−<br>ns<br>−<br>410<br>−<br>J<br>−<br>88<br>−<br>J<br>−<br>498<br>−<br>J<br>−<br>20<br>−<br>ns<br>−<br>9.8<br>−<br>ns<br>−<br>116<br>−<br>ns<br>−<br>3.5<br>−<br>ns<br>−<br>402<br>−<br>J<br>−<br>110<br>−<br>J<br>−<br>512<br>−<br>J<br>~~pt~~<br>~~a~~<br>~~ee ee~~<br>~~ee~~<br>~~a a ee ee~~<br>~~a a ee~~<br>~~a a ee~~<br>~~ee~~<br>~~pt~~<br>~~a a ee~~<br>~~a a ee~~<br>~~a~~<br>~~**a** a~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~pt~~<br>~~a a~~<br>~~ee~~<br>~~**a** ~~~~**a** ~~~~**ee**~~<br>~~po~~<br>~~po~~<br>~~pt~~|



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## **FGH50T65SQD** 

**ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) (continued) 

|**Symbol**<br>**Unit**<br>**Max**<br>**Typ**<br>**Min**<br>**Test Conditions**<br>**Parameter**<br>**SWITCHING CHARACTERISTICS**<br>~~aCE~~|
|---|
|Td(on)<br>Turn−On Delay Time<br>VCC= 400 V, IC= 25 A,<br>RG= 4.7<br>VGE= 15 V,<br>Inductive Load, TC= 175°C<br>−<br>18<br>−<br>ns<br>Tr<br>Rise Time<br>−<br>15<br>−<br>ns<br>Td(off)<br>Turn−Off Delay Time<br>−<br>102<br>−<br>ns<br>Tf<br>Fall Time<br>−<br>8<br>−<br>ns<br>Eon<br>Turn−On Switching Loss<br>−<br>641<br>−<br>J<br>Eoff<br>Turn−Off Switching Loss<br>−<br>203<br>−<br>J<br>Ets<br>Total Switching Loss<br>−<br>844<br>−<br>J<br>Qg<br>Total Gate Charge<br>VCE= 400 V, IC= 50 A,<br>VGE= 15 V<br>−<br>99<br>−<br>nC<br>Qge<br>Gate to Emitter Charge<br>−<br>17<br>−<br>nC<br>Qgc<br>Gate to Collector Charge<br>−<br>23<br>−<br>nC<br>~~a ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~a a~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~a a~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~a~~<br>~~es~~<br>~~ee~~<br>~~a~~<br>~~es~~<br>~~ee~~<br>~~a~~<br>~~—~~<br>~~es~~<br>~~oe oe~~<br>~~aa~~|
|Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product|
|performance may not be indicated by the Electrical Characteristics if operated under different conditions.|
|**ELECTRICAL CHARACTERISTICS OF THE DIODE**(TC= 25°C unless otherwise noted)|
|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>VFM<br>Diode Forward Voltage<br>IF= 30 A<br>TC= 25°C<br>−<br>2.2<br>2.6<br>V<br>~~a~~<br>~~Ge~~<br>~~GG~~|
|TC= 175°C<br>−<br>1.9<br>−|
|Erec<br>Reverse Recovery Energy<br>IF= 30 A,<br>dIF/dt = 200 A/ s<br>TC= 175°C<br>−<br>40<br>−<br>J<br>Trr<br>Diode Reverse Recovery Time<br>TC= 25°C<br>−<br>31<br>−<br>ns<br>TC= 175°C<br>−<br>207<br>−<br>~~rs~~<br>~~a~~<br>~~ee ee eee~~<br>~~a~~|
|Qrr<br>Diode Reverse Recovery Charge<br>TC= 25°C<br>−<br>48<br>−<br>nC<br>TC= 175°C<br>−<br>820<br>−<br>~~EE~~|
|Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product|
|performance may not be indicated by the Electrical Characteristics if operated under different conditions.|



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**FGH50T65SQD** 

## **TYPICAL CHARACTERISTICS** 

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200 200<br>TC = 25 ° C 20V TC = 175 ° C 20V<br>15V 15V<br>12V VGE [ = 8V] 12V<br>150 oy 10V WOE 150 Deenen////40 10V<br>Seen fat Seeene//4aP V GE [ = 8V]<br>100 100<br>200<br>50 Int)conney 4oeeeeeAenee [AM] /@an e [E] 50 [E] SanneTfnon Ageene48<br>0 a> /Seenenn 0 CLA<br>0 1 2 3 4 5 0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE (V) Collector−Emitter Voltage, VCE (V)<br>Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics<br>200 3<br>Common Emitter<br>COE<br>VGE = 15 V<br>150<br>Co oo Ee<br>100A<br>100 S oe n neesnenneoee 2 eae<br>aa> [ae]<br>50A<br>50 oa Common Emitter foe<br>VGE = 15 V<br>T C  = 25 ° C  IC [ = 25A]<br>TC = 175 ° C<br>0 AP 1 Leno<br>0 1 2 3 4 5 −100 −50 0 50 100 150 200<br>Collector−Emitter Voltage, VCE (V) Collector−Emitter Case Temperature, TC ( C)<br>Figure 3. Typical Saturation  Figure 4. Saturation Voltage vs. Case<br>Voltage Characteristics Temperature at Variant Current Level<br>20 20<br>Common Emitter Common Emitter<br>TC = 25 ° C T C  = 175 ° C<br>16 —H—$}— 16 $+<br>oo ee<br>12 Pet | 12 PUP<br>ae ee PityFTFT<br>IC = 25A IC = 25AC = 25A = 25A<br>8 Pp 8 Pw<br>50A 50A<br>100A<br>100A<br>4 os || a 4 ot<br>is Wa<br>0 | | ft. 1 0 | |. [[[1.1]]<br>4 8 12 16 20 4 8 12 16 20<br>Gate−Emitter Voltage, VGE (V)<br> (A)  (A)<br>C C<br>Collector Current, I Collector Current, I<br> (V)<br> (A) CE<br>C<br>Collector Current, I<br>Collector−Emitter Voltage, V<br> (V)  (V)<br>CE CE<br>Collector−Emitter Voltage, V Collector−Emitter Voltage, V<br>**----- End of picture text -----**<br>


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20<br>Common Emitter<br>T C  = 175 ° C<br>16 $+<br>ee<br>12 PUP<br>PityFTFT<br>IC = 25AC = 25A = 25A<br>8 Pw<br>50A<br>100A<br>4<br>ot<br>Wa<br>0 | |. [[[1.1]]<br>4 8 12 16 20<br>Gate−Emitter Voltage, VGE (V)<br> (V)<br>CE<br>Collector−Emitter Voltage, V<br>**----- End of picture text -----**<br>


**Figure 5. Saturation Voltage vs. VGE** 

**Figure 6. Saturation Voltage vs. VGE** 

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**FGH50T65SQD** 

## **TYPICAL CHARACTERISTICS** (Continued) 

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10000<br>| | |tititithtititith Ciesies<br>1000<br>——=_...——— eetfttft<br>100<br>Coesoes<br>—<br>10 SSS Common Emitter Cresres<br>VGE = 0 V, f = 1 MHzGE = 0 V, f = 1 MHz = 0 V, f = 1 MHz, f = 1 MHz f = 1 MHz<br>TC = 25C = 25 = 25 ° C<br>———————<br>1 eran<br>1 10 30<br>Collector−Emitter Voltage, VCE (V)CE (V) (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


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10000 15<br>Common Emitter<br>| | |tititithtititith Ciesies 12 TC = 25 ° C<br>1000 400V<br>——— eetfttft 9 PP oe VCC = 200V LTAA | 300V |<br>——=_...——— P| i | | LY<br>100<br>Coesoes<br>— 6 Sane Seen<br>10 SSS Common Emitter Cresres Pi7pe EE<br>VGE = 0 V, f = 1 MHzGE = 0 V, f = 1 MHz = 0 V, f = 1 MHz, f = 1 MHz f = 1 MHz 3<br>TC = 25C = 25 = 25 ° C<br>——————— AL | ft<br>1 eran 0 AGREE<br>1 10 30 0 20 40 60 80 100<br>Collector−Emitter Voltage, VCE (V)CE (V) (V) Gate Charge, Qg (nC)<br>Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics<br>100 1000<br>a t r —— ee=———— =<br>es t d(off) ee ee<br>a as td(on) Ooa Soe a a ee en =<br>100 tf<br>PT EPZenEneEe<br>Common Emitter Common Emitter<br>10 ey V CC = 400 V, V GE = 15 V V = V CC = 400 V, V GE = 15 V<br>|_| |_| TI C C =  = 2550 A ° C  4 T ICC = 50 A  = 25 ° C<br>5 —a T C  = 175 ° C 10 ia TC = 175 ° C<br>0 10 20 30 40 50 0 10 20 30 40 50<br>Gate Resistance, RG ( Q ) Gate Resistance, RG ( Q )<br>Figure 9. Turn−on Characteristics vs.  Figure 10. Turn−off Characteristics<br>Gate Resistance vs. Gate Resistance<br>5000 200<br>Common Emitter<br>ft | tf tf ft ft tT lf B<br>VGE = 15 V,<br>Sp E on 100 T P C G  = 25 = 4.7  ° C  |} [eb<br>_ Fee TC = 175 ° od C deg<br>1000 Cre a t 1 r<br>ere one<br>= HSE<br>Eoff<br>at PCoOLY LLL<br>Common Emitter<br>ae V CC  = 400 V, V GE  = 15 V PTVery td(on)<br>IC = 50 A<br>TC = 25 ° C<br>TC = 175 ° C<br>100 ian 10 WEL ELE<br>0 10 20 30 40 50 0 25 50 75 100 125 150<br>Gate Resistance, RG ( Q ) Collector Current, IC (A)<br>Figure 11. Switching Loss vs.  Figure 12. Turn−on Characteristics<br>Gate Resistance vs. Collector Current<br> (V)<br>GE<br>Gate−Emitter Voltage, V<br>Switching Time (ns) Switching Time (ns)<br>J)<br>Switching Loss ( Switching Time (ns)<br>**----- End of picture text -----**<br>


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**FGH50T65SQD** 

## **TYPICAL CHARACTERISTICS** (Continued) 

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500 A 10000 to ee _ EE EE EEE)<br>Tet | [ | [ | TT TT tT TT A<br>t f Eon<br>100 aeeer ===NNA A A<br>————— td(off) = eeCP e es ae cae<br>1000 Eoff<br>Sess VA Zeneca eine e aar<br>7 ee<br>10<br>Ty Common Emitter eee<br>=o V GE = 15 V, R G = 4.7  0 SS BEARS | Common Emitter  EERE<br>TC = 25 ° C  VGE = 15 V, RG = 4.7<br>am TC = 175 ° C a 100 |Z TC = 25 ° C  _*<br>TC = 175 ° C<br>1 co : 50 === See<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>Collector Current, IC (A) Collector Current, IC (A)<br>Figure 13. Turn−off Characteristics  Figure 14. Switching Loss<br>vs. Collector Current vs. Collector Current<br>250 300<br>Square Wave<br>meal T J ≤ 175 ° C ,D = 0.5,  100 iPERISHPERISH DC<br>200 VCE = 400 V, VGE= 15/0V, 10 μ μ s<br>RG = 4.7<br>150 BaanlON TC T= 25 C = 75 ° C ° C 10 COS 10 ms 1ms 100 μ μ s TM<br>100<br>ETI TC = 100 ° C NU | nnn aeeiainceeniil<br>1 *Notes:Notes:<br>50 rr SR 1.TC = 25C = 25 = 25 ° C  SU ST<br>2. TJ = 175J = 175 = 175 ° C<br>LU LEIS EH EE<br>0 | A 0.1 3. Single Pulse PTTnTn<br>1k 10k 100k 1M 1 10 100<br>Switching Frequency, f (Hz) Collector−Emitter Voltage, VCE (V)CE (V)(V)<br>Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics<br>150 10<br>100 TC = 25C = 25 = 25 ° C TC = 75C = 75 = 75 ° C<br>| | | | | | | PE<br>di/dt = 200A/ s<br>8<br>See T C  = 175oC TC = 25 o C aE<br>6<br>5 LA<br>di/dt = 100A/ s<br>10 fay ZA ote CeCe eee<br>4<br>SS feSenne TC = 75oC fr-osee0 di/dt = 200A/ s e e0<br>Sa SSS Ee<br>i ed TT C C = 25 = 75 °° C C 2 Benes di/dt = 100A/= 100A/ 100A/ s<br>TC = 175 ° C<br>1 opeEE Ty 0 SREOsOs<br>0 1 2 3 4 5 0 20 40 60 80 100<br>Forward Voltage, VF (V) Forward Current, IF (A)F (A)(A)<br>Switching Time (ns) Switching Loss (J)<br> (A)<br>C<br>Collector Current (A)<br>Collector Current, I<br> (A)<br>rr<br> (A)<br>F<br>Forward Current, I<br>Reverse Recovery Current, I<br>**----- End of picture text -----**<br>


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300<br>100 iPERISHPERISH DC<br>10 μ μ s<br>100 μ μ s<br>1ms<br>10 COS 10 ms TM<br>nnn aeeiainceeniil<br>1 *Notes:Notes:<br>1.TC = 25C = 25 = 25 ° C  SU ST<br>2. TJ = 175J = 175 = 175 ° C<br>EH EE<br>0.1 3. Single Pulse PTTnTn<br>1 10 100 1000<br>Collector−Emitter Voltage, VCE (V)CE (V)(V)<br>Figure 16. SOA Characteristics<br>10<br>TC = 25C = 25 = 25 ° C TC = 75C = 75 = 75 ° C<br>PE<br>di/dt = 200A/ s<br>8<br>aE<br>6<br>di/dt = 100A/ s<br>CeCe eee<br>4<br>di/dt = 200A/ s<br>-osee0fr-osee0 e e0<br>Ee<br>2 Benes di/dt = 100A/= 100A/ 100A/ s<br>0 SREOsOs<br>0 20 40 60 80 100<br>Forward Current, IF (A)F (A)(A)<br> (A)<br>C<br>Collector Current, I<br> (A)<br>rr<br>Reverse Recovery Current, I<br>**----- End of picture text -----**<br>


**Figure 17. Forward Characteristics** 

**Figure 18. Reverse Recovery Current** 

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**FGH50T65SQD** 

## **TYPICAL CHARACTERISTICS** (Continued) 

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**----- Start of picture text -----**<br>
350 1200<br>TC = 25 ° C TC = 75 ° C TC = 25 ° C TC = 75 ° C<br>280<br>900<br>210 fof ee aanne<br>ote pe 600 ASE AA<br>ica en N<br>140<br>di/dt = 200A/ s di/dt = 100A/ s di/dt = 200A/ s<br>pa] ET IN Pap di/dt = 100A/ KL s<br>300<br>70 soot Too yt<br>AA See 4neeee<br>0 re 0 | fil |yt<br>0 20 40 60 80 100 0 20 40 60 80 100<br>Forward Current, IF (A) Forward Current, IF (A)<br> (ns)rr  (nC)rr<br>Reverse Recovery Time, t Stored Recovery Charge, Q<br>**----- End of picture text -----**<br>


**Figure 19. Reverse Recovery Time** 

**Figure 20. Stored Charge** 

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**----- Start of picture text -----**<br>
0.6 TT CL CTT CECE TTT COE CTC ee<br>BW =n 0<br>0.5<br>RT SH<br>0.2 EN RTM Mati<br>0.1 a aAY FAaFA ET<br>TT ELL LE LLL<br>0.1<br>S250come esi ieee|ee iawl ie—<br>0.05 P DM<br>OZ iH |<br>0.02 t1<br>AAI | LE oF Li | + t | 2 <<br>0.01<br> Duty Factor, D = t1/t2<br>single pulse Peak Tj = Pdm x Zthjc + TC<br>0.01<br>10−5 10−4 10−3 10−2 10−1 100<br>Rectangular Pulse Duration (s)<br>Figure 21. Transient Thermal Impedance of IGBT<br>2<br>1 TO Co<br>0.5<br>RR<br>0.2<br>EEE eee<br>0.1 — te<br>0.1 0.05 reAAT PDM<br>0.02 t1<br>0.01 SetKI LT Tttt Ur ETT +- t |-« 2<br> Duty Factor, D = t1/t2<br>single pulse Peak Tj = Pdm x Zthjc + TC<br>0.01 Sn<br>10−5 10−4 10−3 10−2 10−1 100<br>Rectangular Pulse Duration (s)<br>Thermal Response (Zthjc)<br>Thermal Response (Zthjc)<br>**----- End of picture text -----**<br>


**Figure 22. Transient Thermal Impedance of Diode** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−247−3LD** CASE 340CH ISSUE A 

DATE 09 OCT 2019 

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GENERIC<br>MARKING DIAGRAM*<br>XXXXXXXXX<br>AYWWG XXXX = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ � ”, may<br>or may not be present. Some products may<br>not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13853G Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−247−3LD PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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