# IGBT, 100 A, 1.45 V, 246 W, 650 V, TO-247, 4 Pins

![Product image](https://novapart.co/image/farnell:4244647/)

**URL**: https://novapart.co/products/FGH4L50T65MQDC50/igbt-100-a-145-v-246-w-650-to-247-4-pins
**SKU**: FGH4L50T65MQDC50
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.6500
**Stock**: 500+
**Lead Time**: 64 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (27-Jun-2024) |
| No. Of Pins | 4Pins |
| Product Range | Field Stop IV Series |
| Power Dissipation | 246W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4244647/)

**DATA SHEET www.onsemi.com** 

## IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 50 A 

## FGH4L50T65MQDC50 

Using the novel field stop 4th generation IGBT technology and generation 1.5 SiC Schottky Diode technology in TO−247 4−lead package, FGH4L50T65MQDC50 offers the optimum performance with both low conduction and switching losses for high−efficiency operations in various applications, especially totem pole bridgeless PFC and Inverter. 

**==> picture [192 x 35] intentionally omitted <==**

**----- Start of picture text -----**<br>
BVCES VCE(sat) IC<br>650 V 1.45 V 50 A<br>[+++<br>**----- End of picture text -----**<br>


**PIN CONNECTIONS** 

C 

**==> picture [160 x 54] intentionally omitted <==**

**----- Start of picture text -----**<br>
E1: Kelvin Emitter<br>E2: Power Emitter<br>G<br>E1 E2<br>**----- End of picture text -----**<br>


## **Features** 

- Positive Temperature Coefficient for Easy Parallel Operation 

- High Current Capability 

- 100% of the Parts are Tested for ILM (Note 2) 

- Smooth and Optimized Switching 

- Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 50 A 

- No Reverse Recovery / No Forward Recovery 

**==> picture [49 x 17] intentionally omitted <==**

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TO−247−4LD<br>CASE 340CJ<br>**----- End of picture text -----**<br>


- Tight Parameter Distribution 

- RoHS Compliant 

## **Applications** 

## **MARKING DIAGRAM** 

- Charging Station (EVSE) • Solar Inverter 

- UPS, ESS • PFC, Converters 

## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)||
|---|---|---|---|---|
|**Parameter**||**Symbol**|**Value**|**Unit**|
|Collector−to−Emitter Voltage||VCES|650|V|
|Gate−to−Emitter Voltage||VGES|±20||
|Transient Gate−to−Emitter Voltage<br>(tp< 0.5 s, D < 0.001)|||±30||
|Collector Current<br>~~TESTE~~<br>~~PE~~|TC= 25°C (Note 1)<br>~~TESTE~~|IC<br>~~TESTE~~<br>~~ee~~|100<br>~~TESTE~~|A<br>~~TESTE~~<br>~~ee~~|
||TC= 100°C<br>~~TESTE~~<br>~~ee ee~~<br>~~E~~||50<br>~~TESTE~~<br>~~ee~~||
|Power Dissipation<br>~~TESTE~~<br>~~a~~<br>~~PE~~|TC= 25°C<br>~~TESTE~~<br>~~a~~<br>~~ee ee~~<br>~~E~~|PD<br>~~TESTE~~<br>~~a~~<br>~~ee~~<br>~~CO~~|246<br>~~TESTE~~<br>~~a~~<br>~~ee~~|W<br>~~TESTE~~<br>~~a~~<br>~~ee~~<br>~~COL~~|
||TC= 100°C<br>~~TESTE~~<br>~~a~~<br>~~ee ee~~<br>~~E~~||123<br>~~TESTE~~<br>~~a~~<br>~~ee~~<br>~~CO~~||
|Pulsed Collector Current<br>~~PE~~|TC= 25°C (Note 2)<br>~~ee ee~~<br>~~E~~|ILM<br>~~ee~~<br>~~CO~~|200<br>~~ee~~<br>~~CO~~|A<br>~~ee~~<br>~~COL~~<br>~~ee~~|
||TC= 25°C (Note 3)<br>~~ee ee~~<br>~~E~~<br>~~ee~~|ICM<br>~~ee~~<br>~~CO~~<br>~~ee~~|200<br>~~ee~~<br>~~CO~~<br>~~ee~~||
|Diode Forward Current<br>~~PE~~<br>~~a~~<br>~~oT~~|TC =25°C (Note 1)<br>~~ee ee~~<br>~~E~~<br>~~a~~<br>~~ee~~<br>~~oT F~~|IF<br>~~ee~~<br>~~CO~~<br>~~a~~<br>~~ee~~<br>~~FIS~~|60<br>~~ee~~<br>~~CO~~<br>~~a~~<br>~~ee~~<br>~~IS~~|A<br>~~ee~~<br>~~COL~~<br>~~a~~<br>~~ee~~<br>~~ISE}~~|
||TC =100°C<br>~~a~~<br>~~ee~~<br>~~oT F~~||50<br>~~a~~<br>~~ee~~<br>~~IS~~||
|Pulsed Diode Maximum<br>Forward Current<br>~~oT~~|TC =25°C<br>~~ee ~~<br>~~oT F~~|IFM<br> ~~ee~~<br>~~FIS~~|200<br>~~ee~~<br>~~IS~~|A<br>~~ee~~<br>~~ISE}~~|
|Operating Junction and Storage Temperature<br>Range<br>~~oT F~~<br>~~ee~~<br>~~I]~~||TJ,<br>TSTG<br>~~FIS~~<br>~~ee~~<br>~~I]~~|−55 to<br>+175<br>~~IS~~<br>~~ee~~<br>~~I]~~|°C<br>~~ISE}~~<br>~~ee~~<br>~~I]~~|
|Maximum Lead Temp. for Soldering<br>Purposes (1/8″from case for 5 s)<br>~~I]~~||TL<br>~~I]~~|260<br>~~I]~~|°C<br>~~I]~~|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

$Y&Z&3&K G50T65 MQDC50 ~~oT~~ $Y = **onsemi** Logo &Z = Assembly Plant Code &3 = 3−Digit Date Code &K = 2−Digit Lot Traceability Code G50T65MQDC50 = Specific Device Code **ORDERING INFORMATION Device Package Shipping** FGH4L50T65MQDC50 TO−247 30 Units / Tube −4LD ~~FEEJ~~ 

1. Value limit by bond wire 

2. VCC = 400 V, VGE = 15 V, IC = 200 A, Inductive Load, 100% tested 

3. Repetitive rating: pulse width limited by max. junction temperature 

Publication Order Number: **FGH4L50T65MQDC50/D** 

**1** 

© Semiconductor Components Industries, LLC, 2021 **October, 2022 − Rev. 1** 

**FGH4L50T65MQDC50** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance Junction−to−Case, for IGBT|R�JC|0.61|°C/W|
|Thermal Resistance Junction−to−Case, for Diode|R�JCD|0.70||
|Thermal Resistance junction−to−Ambient|R�JA|40||



**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**Parameter**|**Test Conditions**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**||||||||
|Collector−emitter Breakdown Voltage,<br>Gate−emitter Short−circuited|VGE= 0 V, IC= 1 mA||BVCES|650|−|−|V|
|Temperature Coefficient of Breakdown<br>Voltage|VGE= 0 V, IC= 1 mA||�BVCES<br>�TJ|−|0.5|−|V/°C|
|Collector−emitter Cut−off Current,<br>Gate−emitter Short−circuited|VGE= 0 V, VCE= 650 V||ICES|−|−|250|�A|
|Gate Leakage Current, Collector−emitter<br>Short−circuited|VGE= 20 V, VCE= 0 V||IGES|−|−|±400|nA|
|**ON CHARACTERISTICS**||||||||
|Gate−emitter Threshold Voltage|VGE= VCE, IC= 50 mA||VGE(th)|3.0|4.5|6.0|V|
|Collector−emitter Saturation Voltage|VGE= 15 V, IC= 50 A, TJ= 25°C||VCE(sat)|−|1.45|1.8|V|
||VGE= 15 V, IC= 50 A, TJ= 175°C|||−|1.65|−||
|**DYNAMIC CHARACTERISTICS**||||||||
|Input Capacitance|VCE= 30 V, VGE= 0 V, f = 1 MHz||Cies|−|3340|−|pF|
|Output Capacitance|||Coes|−|630|−||
|Reverse Transfer Capacitance|||Cres|−|10|−||
|Gate Charge Total|VCE= 400 V, IC= 50 A, VGE= 15 V||Qg|−|102|−|nC|
|Gate−to−emitter Charge|||Qge|−|19|−||
|Gate−to−collector Charge|||Qgc|−|25|−||
|**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**||||||||
|Turn−on Delay Time|TJ= 25°C, VCC= 400 V,<br>IC= 25 A, RG= 15�,<br>VGE= 15 V, Inductive Load||td(on)|−|27|−|ns|
|Rise Time|||tr|−|10|−||
|Turn−off Delay Time|||td(off)|−|181|−||
|Fall Time|||tf|−|21|−||
|Turn−on Switching Loss|||Eon|−|0.24|−|mJ|
|Turn−off Switching Loss|||Eoff|−|0.31|−||
|Total Switching Loss|||Ets|−|0.55|−||
|Turn−on Delay Time|TJ= 25°C, VCC= 400 V,<br>IC= 50 A, RG= 15�,<br>VGE= 15 V, Inductive Load||td(on)|−|29|−|ns|
|Rise Time|||tr|−|21|−||
|Turn−off Delay Time|||td(off)|−|173|−||
|Fall Time|||tf|−|18|−||
|Turn−on Switching Loss|||Eon|−|0.54|−|mJ|
|Turn−off Switching Loss|||Eoff|−|0.59|−||
|Total Switching Loss|||Ets|−|1.13|−||



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**2** 

**FGH4L50T65MQDC50** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**|||||||
|Turn−on Delay Time|TJ= 175°C, VCC= 400 V,<br>IC= 25 A, RG= 15�,<br>VGE= 15 V, Inductive Load|td(on)|−|24|−|ns|
|Rise Time||tr|−|11|−||
|Turn−off Delay Time||td(off)|−|197|−||
|Fall Time||tf|−|24|−||
|Turn−on Switching Loss||Eon|−|0.31|−|mJ|
|Turn−off Switching Loss||Eoff|−|0.51|−||
|Total Switching Loss||Ets|−|0.82|−||
|Turn−on Delay Time|TJ= 175°C, VCC= 400 V,<br>IC= 50 A, RG= 15�,<br>VGE= 15 V, Inductive Load|td(on)|−|26|−|ns|
|Rise Time||tr|−|27|−||
|Turn−off Delay Time||td(off)|−|186|−||
|Fall Time||tf|−|26|−||
|Turn−on Switching Loss||Eon|−|0.74|−|mJ|
|Turn−off Switching Loss||Eoff|−|0.97|−||
|Total Switching Loss||Ets|−|1.71|−||
|**DIODE CHARACTERISTICS**|||||||
|Diode Forward Voltage|IF= 50 A, TJ= 25°C|VF|−|1.46|1.7|V|
||IF= 50 A, TJ= 175°C||−|1.83|−||
|Total Capacitance|VR= 400 V, f = 1 MHz, TJ= 25°C|C|−|210|−|pF|
||VR= 600 V, f = 1 MHz, TJ= 25°C||−|202|−||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**3** 

**FGH4L50T65MQDC50** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [239 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>TJ = 25 ° C 20 V 10 V VGE = 8 V<br>175<br>15 V<br>150<br>12 V<br>125<br>100<br>75<br>50<br>25<br>0<br>0 1 2 3 4 5<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 1. Typical Output Characteristics** 

**==> picture [238 x 173] intentionally omitted <==**

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200<br>TJ = 175 ° C 20 V 10 V<br>175<br>15 V<br>150<br>12 V VGE = 8 V<br>125<br>100<br>75<br>50<br>25<br>0<br>0 1 2 3 4 5<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 2. Typical Output Characteristics** 

**==> picture [490 x 381] intentionally omitted <==**

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200 200<br>TJ = 25 ° C TJ = 175 ° C Common Emitter<br>175 175<br>VCE = 20 V<br>150 150<br>125 125<br>100 100<br>75 75<br>50 50<br>25 V GE  = 15 V 25 TJ = 175 ° C T J  = 25 ° C<br>0 0<br>0 1 2 3 4 5 0 2 4 6 8 10<br>VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)<br>Figure 3. Typical Output Characteristics Figure 4. Transfer Characteristics<br>2.5 10000<br>Common Emitter Ciss<br>VGE = 15 V<br>IC = 100 A 1000<br>2.0 Coss<br>100<br>IC = 50 A<br>1.5 C rss<br>10<br>IC = 25 A VGE = 0 V<br>f = 1 MHz<br>1.0 1<br>−100 −50 0 50 100 150 200 0.1 1 10 30<br>TJ, COLLECTOR−EMITTER JUNCTION TEMPERATURE ( ° C) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)<br>IC IC<br>C, CAPACITANCE (pF)<br>, COLLECTOR−EMITTER VOLTAGE (V)<br>CE<br>V<br>**----- End of picture text -----**<br>


**Figure 5. Saturation Voltage vs. Junction Temperature at Variant Current Level** 

**Figure 6. Capacitance Variation** 

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**4** 

**FGH4L50T65MQDC50** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [490 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
15 1000<br>Common Emitter VCC = 200 V<br>IC = 50 A<br>12<br>100<br>V CC  = 400 V 10  � s<br>9<br>V CC  = 300 V 10 100  � s<br>6<br>*Notes: 10 ms 1 ms<br>3 1 1. TC = 25 ° C<br>2. TJ = 175 ° C DC<br>3. Single Pulse<br>0 0.1<br>0 20 40 60 80 100 1 10 100 1000<br>QG, GATE CHARGE (nC) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 7. Gate Charge Characteristics Figure 8. SOA Characteristics<br>100 1000<br>Common Emitter Common Emitter<br>VVCCGE = 400 V = 15 V t d(on) VVCCGE = 400 V = 15 V<br>I C  = 50 A IC = 50 A<br>100 td(off) TJ = 25 ° C<br>TJ = 175 ° C<br>tr<br>TJ = 25 ° C t f<br>TJ = 175 ° C<br>10 10<br>0 10 20 30 40 50 0 10 20 30 40 50<br>RG, GATE RESISTANCE ( � ) RG, GATE RESISTANCE ( � )<br>Figure 9. Turn−On Characteristics vs. Gate Figure 10. Turn−Off Characteristics vs. Gate<br>Resistance Resistance<br>1000 1000<br>Common Emitter Common Emitter<br>VCC = 400 V VCC = 400 V<br>V GE  = 15 V VGE = 15 V<br>RG = 15  � t d(off) R G  = 15  �<br>100<br>100<br>tr TJ = 25 ° C<br>10 TJ = 175 ° C<br>td(on) t f<br>T J  = 25 ° C<br>TJ = 175 ° C<br>1 10<br>0 30 60 90 120 150 0 30 60 90 120 150<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>, GATE−EMITTER VOLTAGE (V) , COLLECTOR CURRENT (A)<br>IC<br>GE<br>V<br>SWITCHING TIME (ns) SWITCHING TIME (ns)<br>SWITCHING TIME (ns) SWITCHING TIME (ns)<br>**----- End of picture text -----**<br>


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Figure 11. Turn−on Characteristics vs.<br>Collector Current<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 12. Turn−off Characteristics vs.<br>Collector Current<br>**----- End of picture text -----**<br>


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**5** 

**FGH4L50T65MQDC50** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [241 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>Common Emitter<br>VCC = 400 V<br>VGE = 15 V<br>I C  = 50 A Eoff<br>1<br>Eon<br>T J  = 25 ° C<br>TJ = 175 ° C<br>0.1<br>0 10 20 30 40 50<br>RG, GATE RESISTANCE ( � )<br>Figure 13. Switching Loss vs. Gate Resistance<br>200<br>175<br>150<br>125<br>TJ = 25 ° C<br>100<br>TJ = 175 ° C<br>75<br>50<br>25<br>0<br>0 1 2 3 4 5<br>VF, FORWARD VOLTAGE (V)<br>Figure 15. Forward Diode Characteristics<br>50<br>40<br>30<br>20<br>10<br>0<br>0 100 200 300 400 500 600<br>VR, REVERSE VOLTAGE (V)<br>SWITCHING LOSS (mJ)<br>, FORWARD CURRENT (A)<br>IF<br>J)<br>�<br>Eoss, CAPACITANCE ENERGY (<br>**----- End of picture text -----**<br>


**==> picture [240 x 382] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>Common Emitter Eoff<br>VCC = 400 V<br>VGE = 15 V<br>I C  = 50 A<br>RG = 15  �<br>1<br>Eon<br>T J  = 25 ° C<br>TJ = 175 ° C<br>0.1<br>0 30 60 90 120 150<br>IC, COLLECTOR CURRENT (A)<br>Figure 14. Switching Loss vs. Collector<br>Current<br>10,000<br>1000<br>100 Common Emitter<br>VGE = 0 V<br>f = 1 MHz<br>TC = 25 ° C<br>10<br>0 1 10 100 650<br>VR, REVERSE VOLTAGE (V)<br>SWITCHING LOSS (mJ)<br>OUTPUT CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 16. (Diode) Output Capacitance (Coes) vs. Reverse Voltage** 

**Figure 17. Output Capacitance Stored Energy** 

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**6** 

**FGH4L50T65MQDC50** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [486 x 380] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>0.5 Duty Cycle<br>Duty Factor, D = t 1 /t 2<br>0.1 0.20.1 PDM Peak TJ = PDM x Z � JC + TC<br>0.05 t1 R1 R2<br>0.02 t2<br>0.01 C 1  = t 1  / R 1 C 2  = t 2  / R 2<br>0.01 i: 1 2 3 4<br>ri [K/W]: 0.0111 0.0951 0.0879 0.1143<br>Single Pulse T [s]: 1.09E−05 8.96E−05 5.78E−04 2.801E−3<br>0.001<br>10 [−6] 10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]<br>RECTANGULAR PULSE DURATION (sec)<br>Figure 18. Transient Thermal Impedance of IGBT<br>1<br>0.5 Duty Cycle<br>0.2 Duty Factor, D = t 1 /t 2<br>0.1 0.1 PDM Peak TJ = PDM x Z � JC + TC<br>0.05 t1 R1 R2<br>0.02<br>t2<br>0.01<br>0.01 C 1  = t 1  / R 1 C 2  = t 2  / R 2<br>Single Pulse i: 1 2 3 4<br>ri [K/W]: 0.0408 0.1009 0.1009 0.1819<br>T [s]: 7.15E−06 1.62E−04 3.40E−04 2.94E−03<br>0.001<br>10 [−6] 10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]<br>RECTANGULAR PULSE DURATION (sec)<br>, THERMAL RESPONSE (K/W)<br>JC<br>�<br>Z<br>, THERMAL RESPONSE (K/W)<br>JC<br>�<br>Z<br>**----- End of picture text -----**<br>


**Figure 19. Transient Thermal Impedance of Diode** 

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**7** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **TO−247−4LD** CASE 340CJ ISSUE A 

## DATE 16 SEP 2019 

**DOCUMENT NUMBER: 98AON13852G** 

**DESCRIPTION: TO−247−4LD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2018 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales 

**==> picture [232 x 43] intentionally omitted <==**

 



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