# IGBT, 80 A, 1.67 V, 231 W, 650 V, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:3615778/) **URL**: https://novapart.co/products/FGH40T65UQDF-F155/igbt-80-a-167-v-231-w-650-to-247-3-pins **SKU**: FGH40T65UQDF-F155 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €1.5100 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 231W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 175°C | | Continuous Collector Current | 80A | | Collector Emitter Voltage Max | 650V | | Collector Emitter Saturation Voltage | 1.67V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3615778/) ## IGBT - Field Stop, Trench 650 V, 40 A ## FGH40T65UQDF ## **Description** Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4[th] generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO. ## **Features** - Max Junction Temperature 175°C - Positive Temperature Co−efficient for Easy Parallel Operating - High Current Capability - Low Saturation Voltage: VCE(sat) = 1.33 V (Typ.) @ IC = 40 A - 100% of the Parts Tested for ILM - High Input Impedance - Fast Switching - Tighten Parameter Distribution - This Device is Pb−Free and is RoHS Compliant ## **Applications** - Induction Heating, MWO **www.onsemi.com VCES IC** 650 V 40 A C G ~~4~~ E E C G COLLECTOR ~~o~~ (FLANGE) **TO−247−3LD CASE 340CH** ## **MARKING DIAGRAM** $Y&Z&3&K FGH40T65 UQDF $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40T65UQDF = Specific Device Code ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: **FGH40T65UQDF/D** **1** © Semiconductor Components Industries, LLC, 2016 **November, 2019 − Rev. 3** **FGH40T65UQDF** ## **ABSOLUTE MAXIMUM RATINGS** |**Symbol**|**Description**||**FGH40T65UQDF**|**Unit**| |---|---|---|---|---| |VCES|Collector to Emitter Voltage||650|V| |VGES|Gate to Emitter Voltage||±20|V| ||Transient Gate to Emitter Voltage||±30|V| |IC|Collector Current|TC = 25°C|80|A| |||TC=100°C|40|A| |ILM(Note 1)|Pulsed Collector Current|TC=25°C|120|A| |ICM(Note 2)|Pulsed Collector Current||120|A| |IF|Diode Forward Current|TC=25°C|40|A| ||Diode Forward Current|TC=100°C|20|A| |IFM|Pulsed Diode Maximum Forward Current||60|A| |PD|Maximum Power Dissipation|TC=25°C|231|W| |||TC = 100°C|115|W| |TJ|Operating Junction Temperature||−55 to +175|°C| |TSTG|Storage Temperature Range||−55 to +175|°C| |TL|Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds||300|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 20 � , Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. ## **THERMAL CHARACTERISTICS** |**Symbol**|**Parameter**|**FGH40T65UQDF**|**Unit**| |---|---|---|---| |R�JC(IGBT)|Thermal Resistance, Junction to Case, Max.|0.65|�C/W| |R�JC(Diode)|Thermal Resistance, Junction to Case, Max.|1.75|�C/W| |R�JA|Thermal Resistance, Junction to Ambient, Max.|40|�C/W| ## **PACKAGE MARKING AND ORDERING INFORMATION** |**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Qty per Tube**| |---|---|---|---|---|---| |FGH40T65UQDF|FGH40T65UQDF−F155|TO−247−3LD|−|−|30| **www.onsemi.com** **2** ## **FGH40T65UQDF** **ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL**|**CHARACTERISTICS OF THE IGBT**(TC= 25|°C unless otherwise noted)||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||| |BVCES|Collector to Emitter Breakdown Voltage|VGE= 0 V, IC= 1 mA|650|−|−|V| |�BVCES/�TJ|Temperature Coefficient of Breakdown Voltage|VGE= 0 V, IC= 1 mA|−|0.52|−|V/°C| |ICES|Collector Cut−Off Current|VCE= VCES, VGE= 0 V|−|−|250|�A| |IGES|G−E Leakage Current|VGE= VGES, VCE= 0 V|−|−|±400|nA| |**ON CHARACTERISTICS**||||||| |VGE(th)|G−E Threshold Voltage|IC= 40 mA, VCE= VGE|2.5|4.0|5.5|V| |VCE(sat)|Collector to Emitter Saturation Voltage|IC= 40 A, VGE= 15 V|−|1.33|1.67|V| |||IC= 40 A, VGE= 15 V,
TC= 175°C|−|1.5|−|V| |**DYNAMIC CHARACTERISTICS**||||||| |Cies|Input Capacitance|VCE= 30 V, VGE= 0 V,
f = 1MHz|−|7309|−|pF| |Coes|Output Capacitance||−|58|−|pF| |Cres|Reverse Transfer Capacitance||−|30|−|pF| |**SWITCHING CHARACTERISTICS**||||||| |Td(on)|Turn−On Delay Time|VCC= 400 V, IC= 40 A,
RG= 6�, VGE= 15 V,
Inductive Load, TC= 25°C|−|32|−|ns| |Tr|Rise Time||−|18|−|ns| |Td(off)|Turn−Off Delay Time||−|271|−|ns| |Tf|Fall Time||−|11|−|ns| |Eon|Turn−On Switching Loss||−|989|−|�J| |Eoff|Turn−Off Switching Loss||−|310|−|�J| |Ets|Total Switching Loss||−|1299|−|�J| |Td(on)|Turn−On Delay Time|VCC= 400 V, IC= 40 A,
RG= 6�, VGE= 15 V,
Inductive Load, TC= 25°C|−|30|−|ns| |Tr|Rise Time||−|22|−|ns| |Td(off)|Turn−Off Delay Time||−|298|−|ns| |Tf|Fall Time||−|16|−|ns| |Eon|Turn−On Switching Loss||−|1400|−|�J| |Eoff|Turn−Off Switching Loss||−|553|−|�J| |Ets|Total Switching Loss||−|1953|−|�J| |Qg|Total Gate Charge|VCE= 400 V, IC= 40 A,
VGE= 15 V|−|306|−|nC| |Qge|Gate to Emitter Charge||−|30|−|nC| |Qgc|Gate to Collector Charge||−|77|−|nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **3** **FGH40T65UQDF** ## **ELECTRICAL CHARACTERISTICS OF THE DIODE** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL**|**CHARACTERISTICS OF THE DIO**|**DE**(TC= 25°C unless otherwise noted)|**DE**(TC= 25°C unless otherwise noted)||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**| |VFM|Diode Forward Voltage|IF= 20 A|TC= 25°C|−|1.5|1.95|V| ||||TC= 175°C|−|1.39|−|| |Erec|Reverse Recovery Energy|IF= 20 A,
dIF/dt = 200 A/�s|TC= 175°C|−|115|−|�J| |Trr|Diode Reverse Recovery Time||TC= 25°C|−|89|−|ns| ||||TC= 175°C|−|251|−|| |Qrr|Diode Reverse Recovery Charge||TC= 25°C|−|289|−|nC| ||||TC= 175°C|−|1502|−|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **4** **FGH40T65UQDF** ## **TYPICAL CHARACTERISTICS** **Figure 1. Typical Output Characteristics** **Figure 2. Typical Output Characteristics** **Figure 3. Typical Saturation Voltage Characteristics** **Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level** **Figure 5. Saturation Voltage vs. VGE** **Figure 6. Saturation Voltage vs. VGE** **www.onsemi.com** **5** **FGH40T65UQDF** ## **TYPICAL CHARACTERISTICS** (Continued) **Figure 7. Capacitance Characteristics** **Figure 8. Gate Charge Characteristics** **Figure 9. Turn−on Characteristics vs. Gate Resistance** **Figure 10. Turn−off Characteristics vs. Gate Resistance** **Figure 11. Switching Loss vs. Gate Resistance** **Figure 12. Turn−on Characteristics vs. Collector Current** **www.onsemi.com** **6** **FGH40T65UQDF** **TYPICAL CHARACTERISTICS** (Continued) **Figure 13. Turn−off Characteristics vs. Collector Current** **Figure 15. Load Current vs. Frequency** **Figure 17. Forward Characteristics** **Figure 14. Switching Loss vs. Collector Current** **Figure 16. SOA Characteristics** **Figure 18. Reverse Recovery Current** **www.onsemi.com** **7** **FGH40T65UQDF** ## **TYPICAL CHARACTERISTICS** (Continued) **Figure 19. Reverse Recovery Time** **Figure 20. Stored Charge** **==> picture [49 x 245] intentionally omitted <==** **----- Start of picture text -----**
PDM
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**Figure 21. Transient Thermal Impedance of IGBT** **Figure 22. Transient Thermal Impedance of Diode** **www.onsemi.com** **8** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **TO−247−3LD** CASE 340CH ISSUE A DATE 09 OCT 2019 **==> picture [493 x 574] intentionally omitted <==** **----- Start of picture text -----**
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ � ”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13853G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: TO−247−3LD PAGE 1 OF 1
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