# IGBT, 80 A, 1.85 V, 267 W, 650 V, TO-247AB, 3 Pins

![Product image](https://novapart.co/image/farnell:3004017/)

**URL**: https://novapart.co/products/FGH40T65SPD-F155/igbt-80-a-185-v-267-w-650-to-247ab-3-pins
**SKU**: FGH40T65SPD-F155
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €4.0500
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 267W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AB |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3004017/)

## **Is Now Part of** 

## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

**==> picture [64 x 9] intentionally omitted <==**

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## **FGH40T65SPD 650 V, 40 A Field Stop Trench IGBT** 

## **Features** 

- Maximum Junction Temperature : TJ = 175[o] C 

- Positive Temperaure Co-efficient for Easy Parallel Operating 

- High Current Capability 

- Low Saturation Voltage: VCE(sat) = 1.85 V ( Typ.) @ IC = 40 A 

- High Input Impedance 

- Fast Switching 

- Tighten Parameter Distribution 

## **General Description** 

Using novel field stop IGBT technology, Fairchild’s new series of field stop 3[rd] generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. 

## **Applications** 

   - Solar Inverter UPS, Welder, PFC, Telecom, ESS 

- RoHS Compliant 

- Short Circuit Ruggedness > 5 us @ 25[o] C 

**==> picture [36 x 67] intentionally omitted <==**

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E<br> C<br>G<br>COLLECTOR<br>(FLANGE)<br>**----- End of picture text -----**<br>


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## **Absolute Maximum Ratings** 

|**Symbol**|**Description**|**FGH40T65SPD_F155**|**Unit**|
|---|---|---|---|
|VCES|Collector to Emitter Voltage|650|V|
|VGES|Gate to Emitter Voltage| 20|V|
||Transient Gate to Emitter Voltage|30|V|
|IC|Collector Current<br>@ TC= 25oC|80|A|
||Collector Current<br>@ TC= 100oC|40|A|
|ICM|Pulsed Collector Current|120|A|
|IF|Diode Forward Current<br>@ TC= 25oC|40|A|
||Diode Forward Current<br>@ TC= 100oC|20|A|
|IFM|Pulsed Diode Maximum Forward Current|Pulsed Diode Maximum Forward Current<br>120|A|
|PD|Maximum Power Dissipation<br>@ TC= 25oC|267|W|
||Maximum Power Dissipation<br>@ TC= 100oC|134|W|
|SCWT|Short Circuit Withstand Time                    @ TC= 25oC|5|s|
|TJ|Operating Junction Temperature|-55 to +175|oC|
|Tstg|Storage Temperature Range|-55 to +175|oC|
|TL|Maximum Lead Temp. for soldering<br>Purposes, 1/8” from case for 5 seconds|300|oC|



**Notes:** 

1: Repetitive rating: Pulse width limited by max. junction temperature 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|
|RJC(IGBT)|Thermal Resistance, Junction to Case|-|0.56|oC/W|
|RJC(Diode)|Thermal Resistance, Junction to Case|-|1.71|oC/W|
|RJA|Thermal Resistance, Junction to Ambient|-|40|oC/W|



www.fairchildsemi.com 

**1** 

©2013 Fairchild Semiconductor Corporation FGH40T65SPD_F155 Rev. C0 

## **Package Marking and Ordering Information** 

|**Symbol**<br>a|**Parameter**<br>ee|**Test Conditions**<br>es|**Min.**<br>es<br>ee|**Typ.**<br>es<br>es|**Max.**<br>es<br>ee|**Unit**<br>es|
|---|---|---|---|---|---|---|
|**Off Characteristics**<br>a<br>eees<br>ee<br>es ee|||||||
|BVCES<br>~~=~~|Collector to Emitter Breakdown Voltage V<br>~~=~~|Collector to Emitter Breakdown Voltage VGE= 0 V, IC= 1 mA<br>~~=~~p|650<br>p|-<br>p|-<br>p|V<br>p|
|BVCES<br>TJ<br>~~=~~|Temperature Coefficient of Breakdown<br>Voltage<br>~~=~~|VGE= 0 V, IC= 1mA<br>~~=~~p|-<br>p|0.6<br>p|-<br>p|V/oC<br>p|
|ICES<br>~~=~~<br>es|Collector Cut-Off Current<br>~~=~~<br>re|VCE= VCES, VGE= 0 V<br>~~=~~p<br>re|-<br>p<br>rs|-<br>p|250<br>p|A<br>p|
|IGES<br>es|G-E Leakage Current<br>re|VGE= VGES, VCE= 0 V<br>re|-<br>rs|-|400|nA|
|**On Characteristics**<br>es<br>re<br>re<br>rs|||||||
|VGE(th)<br>a|G-E Threshold Voltage|IC= 40 mA, VCE= VGE<br>ee|4|5.5<br>ee|7.5<br>ee|V<br>ee|
|VCE(sat)<br>a|Collector to Emitter Saturation Voltage|IC= 40 A,VGE= 15 V<br>ee|-|1.85<br>ee|2.4<br>ee|V<br>ee|
|||IC= 40 A,VGE= 15 V,<br>TC= 175oC<br>ee|-|2.51<br>ee|-<br>ee|V<br>ee|
|**Dynamic Characteristics**<br>a<br>ee<br>ee|||||||
|Cies<br>—_—|Input Capacitance<br>—_—~~—~~|VCE= 30 V,VGE= 0 V,<br>f = 1 MHz<br>~~—~~————|-<br>————|1370<br>————|-<br>————|pF<br>————|
|Coes<br>—_—|Output Capacitance<br>—_—~~—~~||-<br>————|94<br>————|-<br>————|pF<br>————|
|Cres<br>—_—|Reverse Transfer Capacitance<br>—_—~~—~~||-<br>————|16<br>————|-<br>————|pF<br>————|
|**Switching Characteristics**|||||||
|Td(on)|Turn-On Delay Time|VCC= 400 V, IC= 40 A,<br>RG= 6, VGE= 15 V,<br>Inductive Load, TC= 25oC|-|16|-|ns|
|Tr|Rise Time||-|42|-|ns|
|Td(off)|Turn-Off Delay Time||-|37|-|ns|
|Tf|Fall Time||-|11|-|ns|
|Eon|Turn-On Switching Loss||-|1.16|-|mJ|
|Eoff|Turn-Off Switching Loss||-|0.28|-|mJ|
|Ets|Total Switching Loss||-|1.44|-|mJ|
|Td(on)<br>=—|Turn-On Delay Time<br>=—|VCC= 400 V, IC= 40 A,<br>RG= 6, VGE= 15 V,<br>Inductive Load, TC= 175oC<br>i:|-<br>i:|14<br>==|-<br>==|ns<br>==|
|Tr<br>=—|Rise Time<br>=—||-<br>i:|49<br>==|-<br>==|ns<br>==|
|Td(off)<br>=—|Turn-Off Delay Time<br>=—||-<br>i:|38<br>==|-<br>==|ns<br>==|
|Tf<br>=—|Fall Time<br>=—||-<br>i:|18<br>==|-<br>==|ns<br>==|
|Eon<br>=—|Turn-On Switching Loss<br>=—||-<br>i:|1.54<br>==|-<br>==|mJ<br>==|
|Eoff<br>=—|Turn-Off Switching Loss<br>=—||-<br>i:|0.52<br>==|-<br>==|mJ<br>==|
|Ets<br>=—|Total Switching Loss<br>=—||-<br>i:|2.06<br>==|-<br>==|mJ<br>==|
|TSC<br>=—|Short Circuit Withstand Time<br>=—|VCC= 400 V, VGE= 15 V,<br>RG= 10<br> i:|5<br>i:|-<br> ==|-<br>==|s<br>==|



**2** 

©2013 Fairchild Semiconductor Corporation FGH40T65SPD_F155 Rev. C0 

www.fairchildsemi.com 

**Electrical Characteristics of the IGBT** (Continued) 

**Symbol Parameter Test Conditions Min. Typ. Max. Unit** Qg Total Gate Charge - 35 - nC Qge Gate to Emitter Charge VVCEGE = 400 V, I = 15 V C = 40 A, - 11 - nC ~~r~~ Qgc Gate to Collector Charge e - 12 - nC 

## **Electrical Characteristics of the Diode** TC = 25°C unless otherwise noted 

|**Electrical Characteristics of the Diode**|**Electrical Characteristics of the Diode**|**Electrical Characteristics of the Diode**TC = 25°C unless otherwise notedC = 25°C unless otherwise noted= 25°C unless otherwise noted|**Electrical Characteristics of the Diode**TC = 25°C unless otherwise notedC = 25°C unless otherwise noted= 25°C unless otherwise noted|||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|VFM|Diode Forward Voltage|IF= 20 A|TC= 25oC|-|2.2|2.7|V|
||||TC= 175oC|-|1.9|-||
|Erec|Reverse Recovery Energy|IF= 20 A, dIF/dt = 200 A/s|TC= 175oC|-|76|-|J|
|Trr|Diode Reverse Recovery Time||TC= 25oC|-|34|-|ns|
||||TC= 175oC|-|196|-||
|Qrr|Diode Reverse Recovery Charge||TC= 25oC|-|52|-|nC|
||||TC= 175oC|-|638|-||



**3** 

©2013 Fairchild Semiconductor Corporation FGH40T65SPD_F155 Rev. C0 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

- **Figure 3. Typical Saturation Voltage                      Figure 4. Saturation Voltage vs. Case Characteristics                                                         Temperature at Variant Current Level** 

- **Figure 5. Saturation Voltage vs. VGE                            Figure 6. Saturation Voltage vs. VGE** 

**4** 

©2013 Fairchild Semiconductor Corporation FGH40T65SPD_F155 Rev. C0 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

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Figure 7. Capacitance Characteristics                        Figure 8. Gate charge Characteristics<br>**----- End of picture text -----**<br>


- **Figure 9. Turn-on Characteristics vs.                         Figure 10. Turn-off Characteristics vs. Gate Resistance                                                              Gate Resistance** 

## **Figure 11. Switching Loss vs.                                     Figure 12. Turn-on Characteristics vs. Gate Resistance** 

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©2013 Fairchild Semiconductor Corporation FGH40T65SPD_F155 Rev. C0 

www.fairchildsemi.com 

- **Typical Performance Characteristics Figure 13. Turn-off Characteristics vs.                       Figure 14. Switching Loss vs. Collector Current                                                          Collector Current** 1000 zuuuu Common Emitter Common emiter | | VoE = 15V, Re = 62 10000 || Veg = 15V, Rg = 62 

- ry T.c =175°C .._ T. =175= 175° C--a ) E ee | 3 £Da ><1000 a "| 210 ——————] az) 20 40 60 80 20 40 60 80 Collector Current, Ic [A] Collector Current, Ic [A] 

- **Figure 15. Load Current Vs. Frequency                      Figure 16. SOA Characteristics** 140 300 

**Figure 17. Forward Characteristics                              Figure 18. Reverse Recovery Current** 

**6** 

©2013 Fairchild Semiconductor Corporation FGH40T65SPD_F155 Rev. C0 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

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Figure 19. Reverse Recovery Time                               Figure 20.  Stored Charge<br>**----- End of picture text -----**<br>


**Figure 21. Transient Thermal Impedance of IGBT** 

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**----- Start of picture text -----**<br>
PDM<br>t1<br>t2<br>Duty Factor, D =<br>Peak T, = Pdm<br>10"<br>c one s<br>PDM T<br>H<br>t1<br>+ i—< _ t | 2 <<br>**----- End of picture text -----**<br>


**Figure 22. Transient Thermal Impedance of Diode** 

**7** 

©2013 Fairchild Semiconductor Corporation FGH40T65SPD_F155 Rev. C0 

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## **Mechanical Dimensions** 

## **Figure 23. TO-247 3L - TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:_ 

_http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-0A3_ 

**8** 

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## **TRADEMARKS** 

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 

|AccuPower™<br>AX-CAP®*<br>BitSiC™<br>Build it Now™<br>CorePLUS™<br>CorePOWER™<br>_CROSSVOLT_™<br>CTL™<br>Current Transfer Logic™<br>DEUXPEED®<br>Dual Cool™<br>EcoSPARK®<br>EfficentMax™<br>ESBC™<br>Fairchild®<br>Fairchild Semiconductor®<br>FACT Quiet Series™<br>FACT®<br>FAST®<br>FastvCore™<br>FETBench™<br>FPS™|F-PFS™<br>FRFET®<br>Global Power ResourceSM<br>GreenBridge™<br>Green FPS™<br>Green FPS™ e-Series™<br>G_max_™<br>GTO™<br>IntelliMAX™<br>ISOPLANAR™<br>Marking Small Speakers Sound Louder<br>and Better™<br>MegaBuck™<br>MICROCOUPLER™<br>MicroFET™<br>MicroPak™<br>MicroPak2™<br>MillerDrive™<br>MotionMax™<br>mWSaver®<br>OptoHiT™<br>OPTOLOGIC®<br>OPTOPLANAR®|PowerTrench®<br>PowerXS™<br>Programmable Active Droop™<br>QFET®<br>QS™<br>Quiet Series™<br>RapidConfigure™<br>Saving our world, 1mW/W/kW at a time™<br>SignalWise™<br>SmartMax™<br>SMART START™<br>Solutions for Your Success™<br>SPM®<br>STEALTH™<br>SuperFET®<br>SuperSOT™-3<br>SuperSOT™-6<br>SuperSOT™-8<br>SupreMOS®<br>SyncFET™<br>™<br>®|Sync-Lock™<br>®*<br>TinyBoost®<br>TinyBuck®<br>TinyCalc™<br>TinyLogic®<br>TINYOPTO™<br>TinyPower™<br>TinyPWM™<br>TinyWire™<br>TranSiC™<br>TriFault Detect™<br>TRUECURRENT®*<br>SerDes™<br>UHC®<br>Ultra FRFET™<br>UniFET™<br>VCX™<br>VisualMax™<br>VoltagePlus™<br>XS™<br>ESYSTEM<br>GENERAL<br>/Le|
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## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
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|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



Rev. I66 

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