# IGBT, 80 A, 2.1 V, 268 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3615773/)

**URL**: https://novapart.co/products/FGH40T65SHD-F155/igbt-80-a-21-v-268-w-650-to-247-3-pins
**SKU**: FGH40T65SHD-F155
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.4100
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 268W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3615773/)

**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** 

## IGBT – Field Stop, Trench 

## **650 V, 40 A** 

## FGH40T65SHD 

## **Description** 

Using novel field stop IGBT technology, **onsemi** ’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. 

## **Features** 

- Maximum Junction Temperature: TJ =175 °C 

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C<br>G<br>E<br>**----- End of picture text -----**<br>


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E<br>C<br>G<br>TO-247-3LD<br>CASE 340CH<br>**----- End of picture text -----**<br>


- Positive Temperature Co-efficient for Easy Parallel Operating 

- High Current Capability 

## **MARKING DIAGRAMS** 

- Low Saturation Voltage: VCE(sat) = 1.6 V(Typ.) @ IC = 40 A 

- 100% of the Parts Tested for ILM (Note 1) 

- High Input Impedance 

- Fast Switching 

- Tighten Parameter Distribution 

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$Y&Z&3&K<br>FGH40T65<br>SHD<br>**----- End of picture text -----**<br>


- This Device is Pb-Free and is RoHS Compliant 

## **Applications** 

- Solar Inverter, UPS, Welder, Telecom, ESS, PFC 

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$Y =  onsemi  Logo<br>&Z = Assembly Plant Code<br>&3 = Numeric Date Code<br>&K = Lot Code<br>FGH40T65SHD = Specific Device Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 

Publication Order Number: **FGH40T65SHD/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **March, 2026 − Rev. 4** 

## **FGH40T65SHD** 

## **ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C, unless otherwise specified) 

|**ABSOLUTE MAXIMUM RATINGS**(TC = 25C = 25= 25°C, unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(TC = 25C = 25= 25°C, unless otherwise specified)||||
|---|---|---|---|---|
|**Parameter**||**Symbol**|**FGH40T65SHD-F155**|**Unit**|
|Collector to Emitter Voltage<br>~~a~~||VCES<br>~~a~~|650<br>~~a~~|V<br>~~a~~|
|Gate to Emitter Voltage<br>~~a~~||VGES<br>~~a~~<br>~~Oe~~|±20<br>~~a~~|V<br>~~a~~|
|Transient Gate to Emitter Voltage<br>~~a~~<br>~~ee~~|||±30<br>~~a~~<br>~~eee~~|V<br>~~a~~<br>~~eee~~|
|Collector Current<br>~~es~~|TC= 25°C<br>~~es~~<br>~~ee~~|IC<br>~~es~~<br>~~Oe~~|80<br>~~es~~<br>~~eee~~|A<br>~~es~~<br>~~eee~~|
|Collector Current<br>~~es~~|TC= 100°C<br>~~es~~<br>~~ee~~||40<br>~~es~~<br>~~eee~~|A<br>~~es~~<br>~~eee~~|
|Pulsed Collector Current (Note 1)<br>~~es~~|TC= 25°C<br>~~es~~<br>~~ee~~|ILM<br>~~es~~<br>~~Oe~~|120<br>~~es~~<br>~~eee~~|A<br>~~es~~<br>~~eee~~|
|Pulsed Collector Current (Note 2)<br>~~ee ~~||ICM<br> ~~Oe ~~|120<br> ~~eee~~|A<br>~~eee~~|
|Diode Forward Current|TC= 25°C|IF|40|A|
|Diode Forward Current|TC= 100°C||20|A|
|Pulsed Diode Maximum Forward Current (Note 2)||IFM|120|A|
|Maximum Power Dissipation<br>~~ee~~|TC= 25°C<br>~~ee~~|PD<br>~~ee~~|268<br>~~ee~~|W<br>~~ee~~|
|Maximum Power Dissipation<br>~~ee~~|TC= 100°C<br>~~ee~~||134<br>~~ee~~|W<br>~~ee~~|
|Operating Junction Temperature<br>~~ee~~||TJ<br>~~ee~~|−55 to +175<br>~~ee~~|°C<br>~~ee~~|
|Storage Temperature Range||Tstg|−55 to +175|°C|
|Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds||TL|300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 30 Inductive Load 

2. Repetitive Rating: Pulse width limited by max. junction temperature. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**||||||||
|---|---|---|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**||**FGH40T65SHD-F155**|||**Unit**|
|Thermal Resistance, Junction to Case, Max. (IGBT)|||R JC|||0.56||°C/W|
|Thermal Resistance, Junction to Case, Max. (Diode)|||R JC|||1.71||°C/W|
|Thermal Resistance, Junction to Ambient, Max.|||R JA|||40||°C/W|
|**PACKAGE MARKING AND ORDERING INFORMATION**|||||||||
|**Part Number**<br>**Top Mark**<br>**Package**<br>**Packing Method**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FGH40T65SHD-F155<br>FGH40T65SHD<br>TO-247-3<br>Tube<br>−<br>−<br>30<br>~~a~~|||||||||



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## **FGH40T65SHD** 

**ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS OF THE IGBT**(TC = 25C = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS OF THE IGBT**(TC = 25C = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS OF THE IGBT**(TC = 25C = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS OF THE IGBT**(TC = 25C = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS OF THE IGBT**(TC = 25C = 25= 25°C unless otherwise noted)|
|---|---|---|---|---|
|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~a~~<br>~~a~~<br>~~G~~|||||
|Collector to Emitter Breakdown Voltage<br>BVCES<br>VGE= 0 V, IC= 1 mA<br>650<br>−<br>−<br>V<br>Temperature Coefficient of Breakdown<br>Voltage<br>BVCES/ TJ<br>IC= 1 mA, Reference to 25°C<br>0.6<br>V/°C<br>~~a~~|||||
|Collector Cut-Off Current<br>ICES<br>VCE= VCES, VGE= 0 V<br>−<br>−<br>250<br>A<br>~~po~~|||||
|G-E Leakage Current<br>IGES<br>VGE= VGES, VCE= 0 V<br>−<br>−<br>±400<br>nA<br>~~a~~<br>~~CG~~|||||
|**ON CHARACTERISTICS**|||||
|G-E Threshold Voltage<br>VGE(th)<br>IC= 40 mA, VCE= VGE|4.0|5.5|7.5<br>V||
|Collector to Emitter Saturation Voltage<br>VCE(sat)<br>IC= 40 A, VGE= 15 V|−|1.6|2.1<br>V||
|IC= 40 A, VGE= 15 V, TC= 175°C|−|2.14|−<br>V||
|**DYNAMIC CHARACTERISTICS**|||||
|Input Capacitance<br>Cies<br>VCE= 30 V, VGE= 0 V, f = 1 MHz|−|1995|−<br>pF||
|Output Capacitance<br>Coes|−|70|−<br>pF||
|Reverse Transfer Capacitance<br>Cres|−|23|−<br>pF||
|**SWITCHING CHARACTERISTICS**|||||
|Turn-On Delay Time<br>td(on)<br>VCC= 400 V, IC= 40 A,<br>RG= 6<br>VGE= 15 V,<br>Inductive Load, TC= 25°C<br>Rise Time<br>tr<br>Turn-Off Delay Time<br>td(off)<br>Fall Time<br>tf<br>Turn-On Switching Loss<br>Eon<br>Turn-Off Switching Loss<br>Eoff<br>Total Switching Loss<br>Ets<br>Turn-On Delay Time<br>td(on)<br>VCC= 400 V, IC= 40 A,<br>RG= 6<br>VGE= 15 V,<br>Inductive Load, TC= 175°C<br>Rise Time<br>tr<br>Turn-Off Delay Time<br>td(off)<br>Fall Time<br>tf<br>Turn-On Switching Loss<br>Eon<br>Turn-Off Switching Loss<br>Eoff<br>Total Switching Loss<br>Ets<br>Total Gate Charge<br>Qg<br>VCE= 400 V, IC= 40 A, VGE= 15 V<br>Gate to Emitter Charge<br>Qge<br>Gate to Collector Charge<br>Qgc<br>~~po~~<br>~~po~~<br>|<br>~~po~~<br>~~po~~<br>~~po~~<br>~~po~~<br>~~ee~~<br>~~ee~~<br>~~pO~~<br>~~po~~<br>|<br>~~po~~<br>~~po~~<br>~~po~~<br>~~po~~<br>~~ee~~<br>~~ee~~<br>~~po~~<br>~~po~~<br>~~ee~~<br>~~ee~~|−<br>−<br>−<br>−<br>−<br>−<br>−<br>−<br>−<br>−<br>−<br>−<br>−<br>−<br>−<br>−<br>−<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a ~~<br>~~a~~|19.2<br>34.4<br>65.6<br>9.6<br>1010<br>297<br>1307<br>18.4<br>32.8<br>71.2<br>14.4<br>1390<br>541<br>1931<br>72.2<br>13.5<br>28.5<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br> ~~a ~~<br>~~a~~|−<br>ns<br>−<br>ns<br>−<br>ns<br>−<br>ns<br>−<br>J<br>−<br>J<br>−<br>J<br>−<br>ns<br>−<br>ns<br>−<br>ns<br>−<br>ns<br>−<br>J<br>−<br>J<br>−<br>J<br>−<br>nC<br>−<br>nC<br>−<br>nC<br> ~~ee~~<br> ~~ee~~<br> ~~ee~~<br> ~~ee~~<br> ~~ee~~<br> ~~ee~~<br> ~~eee~~<br> ~~a~~<br> ~~ee~~<br> ~~ee~~<br> ~~ee~~<br> ~~ee~~<br> ~~ee~~<br> ~~eee~~<br> ~~a~~<br> ~~ee~~<br>~~ee~~||



**ELECTRICAL CHARACTERISTICS OF THE DIODE** (TC = 25 ° C unless otherwise noted) 

|**Parameter**<br>~~GC~~|**Symbol**<br>~~GC~~<br>~~ee~~|**Test Conditions**<br>~~GC~~<br>~~ee~~|**Test Conditions**<br>~~GC~~<br>~~ee~~|**Min**<br>~~GC~~<br>~~ee~~|**Typ**<br>~~GC~~<br>~~ee~~|**Max**<br>~~GC~~<br>~~ee~~|**Unit**<br>~~GC~~<br>~~ee~~|
|---|---|---|---|---|---|---|---|
|Diode Forward Voltage<br>~~es~~<br>~~ee~~|VFM<br>~~es~~<br>~~ee~~<br>~~ee~~|IF= 20 A<br>~~es~~<br>.|TC= 25°C<br>~~es~~<br>~~ee~~|−<br>~~es~~<br>~~ee~~|2.2<br>~~es~~<br>~~ee~~<br>~~ee~~|2.8<br>~~es~~<br>~~ee~~<br>~~ee~~|V<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~fe|~~|
||||TC= 175°C<br>~~es~~<br>~~ee~~<br>~~-~~<br>~~|~~|−<br>~~es~~<br>~~ee~~<br>~~|~~<br>~~|~~|1.94<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~|~~|−<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~fe~~||
|Reverse Recovery Energy<br>~~ee~~|Erec<br>~~ee~~<br>~~ee~~|IF= 20 A,<br>dIF/dt = 200 A/ s<br>.|TC= 175°C<br>~~ee~~<br>~~-~~<br>~~|~~|−<br>~~ee~~<br>~~|~~<br>~~|~~|50<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~|~~|−<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~fe~~|J<br>~~ee~~<br>~~ee~~<br>~~fe|~~|
|Diode Reverse Recovery Time<br>~~ee~~|trr<br>~~ee~~<br>~~ee~~||TC= 25°C<br>~~ee~~<br>~~-~~<br>~~|~~<br>~~—~~|−<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~—~~|31.8<br>~~ee~~<br>~~ee ~~<br>~~|~~<br>~~|~~<br>~~—~~<br>~~ee~~|−<br>~~ee~~<br> ~~ee~~<br>~~|~~<br>~~fe~~<br>~~—~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~<br>~~fe |~~<br>~~—~~<br>~~ee~~<br>~~ee~~|
||||TC= 175°C<br>~~—~~<br>~~ee~~|−<br>~~—~~<br>~~ee~~|192<br>~~—~~<br>~~ee~~<br>~~ee~~|−<br>~~—~~<br>~~ee~~<br>~~ee~~||
|Diode Reverse Recovery Charge|Qrr||TC= 25°C|−<br>~~ee~~|50.6<br>~~ee ~~<br>~~ee~~|−<br> ~~ee~~|nC<br>~~ee~~<br>~~re~~|
||||TC= 175°C<br>~~re~~|−<br>~~re~~<br>~~ee~~|699<br>~~re~~<br>~~ee~~|−<br>~~re~~||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**FGH40T65SHD** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

**Figure 1. Typical Output Characteristics** 

**Figure 2. Typical Output Characteristics** 

**Figure 3. Typical Saturation Voltage Characteristics** 

**Figure 4. Saturation Voltage vs. Case Temperature at Variant Current** 

**Figure 5. Saturation Voltage vs. VGE** 

**Figure 6. Saturation Voltage vs VGE** 

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**FGH40T65SHD** 

**TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

**Figure 7. Capacitance Characteristics** 

**Figure 9. Turn-On Characteristics vs. Gate Resistance** 

**Figure 11. Switching Loss vs. Gate Resistance** 

**Figure 8. Gate Charge Characteristics** 

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Figure 10. Turn-Off Characteristics<br>vs. Gate Resistance<br>**----- End of picture text -----**<br>


**Figure 12. Turn-On Characteristics vs. Collector Current** 

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## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

**Figure 13. Turn-Off Characteristics vs. Collector Current** 

**Figure 14. Switching Loss vs. Collector Current** 

**Figure 15. Load Current vs. Frequency** 

**Figure 16. SOA Characteristics** 

**Figure 17. Forward Characteristics** 

**Figure 18. Reverse Recovery Current** 

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## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

**Figure 19. Reverse Recovery Time** 

**Figure 20. Stored Charge** 

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PDM<br>> t1 |<<br>| . t2 7<br>Duty Factor, D = t1/t2<br>10"<br>PDM +<br>+>J | L t1 | I< E L<br>|. t2 7<br>**----- End of picture text -----**<br>


**Figure 21. Transient Thermal Impedance of IGBT** 

**Figure 22. Transient Thermal Impedance of Diode** 

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**FGH40T65SHD** 

## **REVISION HISTORY** 

|**Revision**<br>**Description of Changes**<br>**Date**<br>4<br>Document rebranded to**onsemi**format.<br>3/27/2026<br>This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made<br>~~—~~|
|---|
|on the noted approval dates.|



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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−247−3LD** CASE 340CH ISSUE A 

DATE 09 OCT 2019 

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GENERIC<br>MARKING DIAGRAM*<br>XXXXXXXXX<br>AYWWG XXXX = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ � ”, may<br>or may not be present. Some products may<br>not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13853G Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−247−3LD PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2016 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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