# IGBT, 80 A, 1.8 V, 555 W, 1.2 kV, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:3253702/) **URL**: https://novapart.co/products/FGH40T120SMD-F155/igbt-80-a-18-v-555-w-12-kv-to-247-3-pins **SKU**: FGH40T120SMD-F155 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €4.2200 **Stock**: 200+ **Lead Time**: 120 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | Field Stop Trench Series | | Power Dissipation | 555W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 175°C | | Continuous Collector Current | 80A | | Collector Emitter Voltage Max | 1.2kV | | Collector Emitter Saturation Voltage | 1.8V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3253702/) ## IGBT - Field Stop, Trench ## **1200 V, 40 A** ## FGH40T120SMD, FGH40T120SMD-F155 ## **Description** Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. ## **Features** - FS Trench Technology, Positive Temperature Coefficient - High Speed Switching - Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A - 100% of the Parts tested for ILM(1) - High Input Impedance - These Devices are Pb−Free and are RoHS Compliant ## **Applications** - Solar Inverter, Welder, UPS & PFC applications ## **www.onsemi.com** **==> picture [157 x 176] intentionally omitted <==** **----- Start of picture text -----**
C
G
E
E
C
G
TO−247−3LD TO−247−3LD
CASE 340CK CASE 340CH
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## **MARKING DIAGRAM** **==> picture [45 x 27] intentionally omitted <==** **----- Start of picture text -----**
$Y&Z&3&K
FGH40T120
SMD
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**==> picture [181 x 49] intentionally omitted <==** **----- Start of picture text -----**
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH40T120SMD = Specific Device Code
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## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: **FGH40T120SMD/D** **1** © Semiconductor Components Industries, LLC, 2017 **July, 2021 − Rev. 5** ## **FGH40T120SMD, FGH40T120SMD−F155** **ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) |**ABSOLUTE MAXIMUM RATINGS**(TC= 25°C unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25°C unless otherwise noted)|||| |---|---|---|---|---| |**Description**||**Symbol**|**Ratings**|**Unit**| |Collector to Emitter Voltage||VCES|1200|V| |Gate to Emitter Voltage||VGES|±25|V| |Transient Gate to Emitter Voltage|||±30|V| |Collector Current|TC= 25°C|IC|80|A| |Collector Current|TC= 100°C||40|A| |Clamped Inductive Load Current|TC= 25°C|ILM(Note 1)|160|A| |Pulsed Collector Current||ICM(Note 2)|160|A| |Diode Continuous Forward Current|TC= 25°C|IF|80|A| |Diode Continuous Forward Current|TC= 100°C||40|A| |Diode Maximum Forward Current||IFM|240|A| |Maximum Power Dissipation|TC= 25°C|PD|555|W| |Maximum Power Dissipation|TC= 100°C||277|W| |Operating Junction Temperature||TJ|−55 to +175|°C| |Storage Temperature Range||Tstg|−55 to +175|°C| |Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds||TL|300|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Vcc = 600 V,VGE = 15 V, IC = 160 A, RG = 10 W , Inductive Load 2. Limited by Tjmax ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Typ**|**Max**|**Unit**| |Thermal Resistance, Junction to Case|R�JC(IGBT)|−|0.27|°C/W| |Thermal Resistance, Junction to Case|R�JC(Diode)|−|0.89|°C/W| |Thermal Resistance, Junction to Ambient|R�JA|−|40|°C/W| ## **PACKAGE MARKING AND ORDERING INFORMATION** |**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---| |FGH40T120SMD|FGH40T120SMD|TO−247−3
(PB−Free)|−|−|30| |FGH40T120SMD|FGH40T120SMD−F155|TO−247−3
(Pb−Free)|−|−|30| ## **ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) |**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**OFF CHARACTERISTICS**||||||| |Collector to Emitter Breakdown Voltage|BVCES|VGE= 0 V, IC= 250�A|1200|−|−|V| |Collector Cut−Off Current|ICES|VCE= VCES, VGE= 0 V|−|−|250|�A| |G−E Leakage Current|IGES|VGE= VGES, VCE= 0 V|−|−|±400|nA| |**ON CHARACTERISTICs**||||||| |G−E Threshold Voltage|VGE(th)|IC= 40 mA, VCE= VGE|4.9|6.2|7.5|V| |Collector to Emitter Saturation Voltage|VCE(sat)|IC= 40 A, VGE= 15 V, TC= 25°C|−|1.8|2.4|V| |||IC= 40 A, VGE= 15 V, TC= 175°C|−|2.0|−|V| **www.onsemi.com** **2** ## **FGH40T120SMD, FGH40T120SMD−F155** ## **ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) (continued) |**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**DYNAMIC CHARACTERISTICS**||||||| |Input Capacitance|Cies|VCE= 30 V, VGE= 0 V, f = 1 MHz|−|4300|−|pF| |Output Capacitance|Coes||−|180|−|pF| |Reverse Transfer Capacitance|Cres||−|100|−|pF| |**SWITCHING CHARACTERISTICS**||||||| |Turn−On Delay Time|td(on)|VCC= 600 V, IC= 40 A,
RG= 10��VGE= 15 V,
Inductive Load, TC= 25°C|−|40|−|ns| |Rise Time|tr||−|47|−|ns| |Turn−Off Delay Time|td(off)||−|475|−|ns| |Fall Time|tf||−|10|−|ns| |Turn−On Switching Loss|Eon||−|2.7|−|mJ| |Turn−Off Switching Loss|Eoff||−|1.1|−|mJ| |Total Switching Loss|Ets||−|3.8|−|mJ| |Turn−On Delay Time|td(on)|VCC= 600 V, IC= 40 A,
RG= 10��VGE= 15 V,
Inductive Load, TC= 175°C|−|40|−|ns| |Rise Time|tr||−|55|−|ns| |Turn−Off Delay Time|td(off)||−|520|−|ns| |Fall Time|tf||−|50|−|ns| |Turn−On Switching Loss|Eon||−|3.4|−|mJ| |Turn−Off Switching Loss|Eoff||−|2.5|−|mJ| |Total Switching Loss|Ets||−|5.9|−|mJ| |Total Gate Charge|Qg|VCE= 600 V, IC= 40 A, VGE= 15 V|−|370|−|nC| |Gate to Emitter Charge|Qge||−|23|−|nC| |Gate to Collector Charge|Qgc||−|210|−|nC| ## **ELECTRICAL CHARACTERISTICS OF THE DIODE** (TJ = 25 ° C unless otherwise noted) |**Parametr**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |Diode Forward Voltage|VFM|IF= 40 A, TC= 25°C|−|3.8|4.8|V| |||IF= 40 A, TC= 175°C|−|2.7|−|V| |Diode Reverse Recovery Time|trr|VR= 600 V, IF= 40 A,
diF/dt = 200 A/�s, TC= 25°C|−|65|−|ns| |Diode Peak Reverse Recovery Current|Irr||−|7.2|−|A| |Diode Reverse Recovery Charge|Qrr||−|234|−|nC| |Diode Reverse Recovery Time|trr|VR= 600 V, IF= 40 A,
diF/dt = 200 A/�s, TC= 175°C|−|200|−|ns| |Diode Peak Reverse Recovery Current|Irr||−|18.0|−|A| |Diode Reverse Recovery Charge|Qrr||−|1800|−|nC| **www.onsemi.com** **3** **FGH40T120SMD, FGH40T120SMD−F155** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [196 x 170] intentionally omitted <==** **----- Start of picture text -----**
300
T C = 25oC 20V 17V 15V
250
200
12V
150
100
VGE =10V
50
0
0 1 2 3 4 5 6 7 8 9 10
Collector−Emitter Voltage, VCE [V]
[A]
C
Collector Current, I
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**Figure 1. Typical Output Characteristics** **==> picture [192 x 168] intentionally omitted <==** **----- Start of picture text -----**
300
T C = 175oC 20V 17V
250
15V
200
150
12V
100
VGE=10V
50
0
0 1 2 3 4 5 6 7 8 9 10
Collector−Emitter Voltage, VCE [V]
[A]
C
Collector Current, I
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**Figure 2. Typical Output Characteristics** **==> picture [186 x 167] intentionally omitted <==** **----- Start of picture text -----**
160
Common Emitter
VG E = 15V
TC = 25oC
120 TC = 175 o C −−−
80
40
0
012345
Collector−Emitter Voltage, VCE [V]
[A]
C
Collector Current, I
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**Figure 3. Typical Saturation Voltage Characteristics** **==> picture [183 x 167] intentionally omitted <==** **----- Start of picture text -----**
4
Common Emitter
VGE = 15V
3
80A
40A
2
IC=20A
1
25 50 75 100 125 150 175
Case Temperature TC [ [o] C]
[V]
CE
Collector Emitter Voltage, V
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**Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level** **==> picture [187 x 166] intentionally omitted <==** **----- Start of picture text -----**
20
Common Emitter
T C = 25 [o] C
16
80A
12
40A
8
IC=20A
4
0
0 4 8 12 16 20
Gate−Emitter Voltage, VGE [V]
[V]
CE
Collector Emitter Voltage, V
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**Figure 5. Saturation Voltage vs VGE** **==> picture [183 x 166] intentionally omitted <==** **----- Start of picture text -----**
20
Common Emitter
TC = 175 [o] C
16
80A
12
40A
8
IC=20A
4
0
0 4 8 12 16 20
Gate−Emitter Voltage, VGE [V]
[V]
CE
Collector Emitter Voltage, V
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**Figure 6. Saturation Voltage vs VGE** **www.onsemi.com** **4** **FGH40T120SMD, FGH40T120SMD−F155** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [455 x 578] intentionally omitted <==** **----- Start of picture text -----**
6000 200
Common Emitter VCC = 600V
VGE = 0V , f = 1MHz load Current : peak of square wave
5000 Ciss T C = 25oC 160
4000
120 TC = 100oC
3000
80
2000
Coss
40 Duty cycle : 50%
1000 Crss T = 100oC
C
Powe Dissipation = 277 W
0
1 10 1k 10k 100k 1M
Collector−Emitter Voltage, VCE [V] Switching Frequency, f [Hz]
Figure 7. Capacitance Characteristics Figure 8. Load Current vs. Frequency
1000
1000
100 tr td(off)
100
t d(on)
Common Emitter tf
10
VCC = 600V, VGE = 15V
IC = 40A 10
1 T T C C = 25 = 175o Co C 1 TCommon EmitterV C CC = 25 = 600V, VoC ,GET C = 15V, = 175 [o] ICC = 40A
0 10 20 30 40 50 0 10 20 30 40 50 60 70
Gate Resistance, RG [[] W []] Gate Resistance, RG [W]
Figure 9. Turn−On Characteristics vs. Gate Figure 10. Turn−Off Characteristics vs.
Resistance Collector Current
10 t r
Eon 100
Eoff t
d(on)
1
Common Emitter
V CC = 600V, V GE = 15V Common Emitter
I C = 40A VGE = 15V, RG = 10W
0.1 TC = 25oC 10 T C = 25oC
TC = 175oC TC = 175oC
0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80
Gate Resistance , RG [W] Collector Current, IC [A]
[A]
Cappacitance [pF] C
Collector Current, I
Switching Time [ns]
Switching Time [ns]
Switching Loss [mJ] Switching Time [ns]
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**Figure 11. Switching Loss vs. Gate Resistance** **Figure 12. Turn−On Characteristics vs. Collector Current** **www.onsemi.com** **5** **FGH40T120SMD, FGH40T120SMD−F155** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [188 x 370] intentionally omitted <==** **----- Start of picture text -----**
1000
t d(off)
100
10 t f
Common Emitter
V GE = 15V, R G = 10 W
TC = 25oC , TC = 175oC
1
20 40 60 80
Collector Current, I C A[ ]
Figure 13. Turn−Off Characteristics vs.
Collector Current
15
12 200V 400V
VCC = 600V
9
6
3
Common Emitter
TC = 25 o C
0
0 50 100 150 200 250 300 350 400
Gate Charge, Q g [nC]
Switching Time [ns]
[V]
GE
Gate Emitter Voltage, V
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**Figure 15. Gate Charge Characteristics** **==> picture [187 x 164] intentionally omitted <==** **----- Start of picture text -----**
100
10
TC = 25oC
TC = 175oC −−−
1
0 1 2 3 4 5
Forward Voltage, VF [V]
[A]
F
Forward Current, I
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**Figure 17. Forward Characteristics** **==> picture [177 x 169] intentionally omitted <==** **----- Start of picture text -----**
30
10 Eon
Eoff
1
Common Emitter
VGE = 15V, RG = 10 W
T C = 25oC
TC = 175 o C
0.1
10 20 30 40 50 60 70 80
Collector Current, IC [A]
Switching Loss [mJ]
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**Figure 14. Switching Loss vs. Collector Current** **==> picture [191 x 367] intentionally omitted <==** **----- Start of picture text -----**
IcMAX (Pulsed)
100
10 � s
IcMAX (Continuous) 100 � s
1ms
10
10 ms
DC Operation
1
Single Nonrepetitive
0.1 Pulse Tc = 25 [o] C
Curves must be derated
linearly with increase
in temperature
0.01
0.1 1 10 100 1000
Collector−Emitter Voltage, VCE [V]
Figure 16. SOA Characteristics
10
diF/dt = 200 A/ � s
diF/dt = 100 A/ � s
VR = 600 V, IF = 40 A
TC = 25oC
Foward Current, IF [ [A]]
Collector Current, I [A]c
Reverse Recovery Currnet, Irr [A]
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**Figure 18. Reverse Recovery Current** **www.onsemi.com** **6** **FGH40T120SMD, FGH40T120SMD−F155** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [448 x 368] intentionally omitted <==** **----- Start of picture text -----**
100 400
VR = 600 V, IF = 40 A
TC = 25oC
90
300
diF/dt = 200 A/ � s
80
200
70 diF/dt = 100 A/ � s diF /dt = 100 A/ � s
60 di F /dt = 200 A/ � s 100
VR = 600 V, IF = 40 A
TC = 25oC
50 0
0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80
Forward Current, I F A [ ] Forwad Current, I F [A]
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
1
0.5
0.1
0.3
0.1
0.01 0.05 PDM
t1
0.02 t 2
Duty Factor, D = t1/t2
0.01 single pulse Peak T j = Pdm x Zthjc + T C
1E−3
1E−6 1E−5 1E−4 1E−3 0.01 0.1 1
Rectangular Pulse Duration [sec]
[ns]
rr
Reverse Recovery Time, t
Stored Recovery Charge, Qrr [nC]
Thermal Response [Zthjc]
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**Figure 21. Transient Thermal Impedance of IGBT** **www.onsemi.com** **7** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [56 x 29] intentionally omitted <==** **----- Start of picture text -----**
TO−247−3LD
CASE 340CH
ISSUE A
**----- End of picture text -----**
DATE 09 OCT 2019 **==> picture [465 x 210] intentionally omitted <==** **----- Start of picture text -----**
E. LEAD FINISH GENERIC IS UNCONTROLLED IN THE REGION DEFINED BY L1. |e | ~ | 556| ~ |
MARKING DIAGRAM* 19.75 | 20.00 | 20.25
-—
) q | op | 3.51 | 3.58 | 3.65 |
| Q | 5.34 | 5.46 | 5.58 |
XXXXXXXXX
AYWWG XXXX = Specific Device Code
A = Assembly Location | ob | 4.17 | 1.26 | 1.35 |
Y = Year
TT WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer to 13.08[ ~ | ~ |
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “or may not be present. Some products may . ”, may 1281| ~ | ~ |
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13853G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**----- End of picture text -----**
**DOCUMENT NUMBER: 98AON13853G DESCRIPTION: TO−247−3LD** **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [116 x 29] intentionally omitted <==** **----- Start of picture text -----**
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
**----- End of picture text -----**
DATE 31 JAN 2019 A P1 | A E A2 @ P 0) D2 ~~1 + _~~ Q E2 ) ! S C ~~R OG )~~ D1 D B E1 2 1 2 3 ~~|~~ Oo | ~~N77~~ L1 A1 b4 L c (3X) b (2X) b2 0.25[M] B A[M] MILLIMETERS (2X) e DIM MIN NOM MAX A ~~eee~~ A 4.58 4.70 4.82 NOTES: UNLESS OTHERWISE SPECIFIED. ~~|~~ A1 2.20 2.40 2.60 A. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD ~~a~~ A2 1.40 ~~ee~~ 1.50 ~~ee~~ 1.60 ~~ee~~ b 1.17 1.26 1.35 ©. FLASH,DRAWING ANDCONFORMS TIE BAR EXTRUSIONS.TO ASME Y14.5 - 2009. ~~eeee~~ b2 1.53 ~~ee~~ 1.65 ~~ee~~ 1.77 D. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BYL1. ~~[—~~ b4 ~~[|~~ 2.42 2.54 ~~ss~~ 2.66 c 0.51 0.61 0.71 E. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. ~~ee ee ee eee~~ **GENERIC** D 20.32 20.57 20.82 **MARKING DIAGRAM*** ~~ee ee ee ee~~ D1 13.08 ~ ~ ~~ee ee eee eee~~ AYWWZZ ~~ee~~ D2 ~~ee~~ 0.51 0.93 1.35 XXXXXXX ~~a~~ E ~~ee~~ 15.37 15.62 15.87 ~~eee~~ XXXXXXX ~~a~~ E1 ~~ee~~ 12.81 ~ ~~eee~~ ~ ~~a~~ E2 ~~ee~~ 4.96 5.08 ~~eee~~ 5.20 XXXX = Specific Device Code ~~a~~ e ~~ee~~ ~ 5.56 ~~eee~~ ~ A = Assembly Location Y = Year ~~ee~~ L ~~ee~~ 15.75 16.00 ~~**eee**~~ 16.25 WW = Work Week L1 3.69 3.81 3.93 ZZ = Assembly Lot Code P 3.51 3.58 3.65 *This information is generic. Please refer to ~~po |~~ ~~**|**~~ P1 6.60 6.80 7.00 device data sheet for actual part marking. ~~fo |~~ ~~**|**~~ Pb−Free indicator, “G” or microdot “ . ”, may ~~a~~ Q ~~ee~~ 5.34 5.46 5.58 or may not be present. Some products may not follow the Generic Marking. ~~a~~ S ~~ee~~ 5.34 5.46 eee 5.58 ~~ee~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13851G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ## **DOCUMENT NUMBER: 98AON13851G** **DESCRIPTION: TO−247−3LD SHORT LEAD** **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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