# IGBT, 80 A, 1.9 V, 333 W, 1 kV, TO-247AB, 3 Pins ![Product image](https://novapart.co/image/farnell:3368686/) **URL**: https://novapart.co/products/FGH40T100SMD/igbt-80-a-19-v-333-w-1-kv-to-247ab-3-pins **SKU**: FGH40T100SMD **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €1.8900 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 333W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247AB | | Operating Temperature Max | 175°C | | Continuous Collector Current | 80A | | Collector Emitter Voltage Max | 1kV | | Collector Emitter Saturation Voltage | 1.9V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3368686/) ## FGH40T100SMD ## 1000 V, 40 A Field Stop Trench IGBT **==> picture [471 x 540] intentionally omitted <==** **----- Start of picture text -----**
Features General Description
• High Current Capability Using innovative field stop trench IGBT technology, ON
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A Semiconductor new series of field stop trench IGBTs offer the
• High Input Impedance optimum perfor-mance for hard switching application such as
UPS, welder and PFC applications.
• Fast Switching
• RoHS Compliant
Applications
• UPS, welder, PFC
E C
C
G
G
COLLECTOR
E
& (FLANGE)
«#8
Absolute Maximum Ratings
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 1000 V
Gate to Emitter Voltage ± 25 V
VGES
Transient Gate to Emitter Voltage ± 30 V
IC Collector Current @ TC = 25 [o] C 80 A
Collector Current @ TC = 100 [o] C 40 A
ICM (1) Pulsed Collector Current @ TC = 25 [o] C 120 A
IF Diode Forward Current @ TC = 25 [o] C 80 A
Diode Forward Current @ TC = 100 [o] C 40 A
———————— IFM (1) Pulsed Diode Forward Current @ TC = 25 [o] C 120 A
PD Maximum Power Dissipation @ TC = 25 [o] C 333 W
Maximum Power Dissipation @ TC = 100 [o] C 166 W
TJ Operating Junction Temperature -55 to +175 oC
————<—————— Tstg Storage Temperature Range -55 to +175 oC
TL Maximum Lead Temp. for solderingPurposes, 1/8” from case for 5 seconds 300 oC
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RθJC(IGBT) Thermal Resistance, Junction to Case - 0.45 oC/W
RθJC(Diode) Thermal Resistance, Junction to Case - 0.8 oC/W
———————— RθJA Thermal Resistance, Junction to Ambient - 40 oC/W
**----- End of picture text -----**
©2012 Semiconductor Components Industries, LLC. August-2017, Rev. 3 Publication Order Number: FGH40T100SMD/D ## Package Marking and Ordering Information |Device Marking|Device|Package|Reel Size|Tape Width|Quantity| |---|---|---|---|---|---| |FGH40T100SMD|FGH40T100SMD|TO-247 A03|-|-|30ea| |FGH40T100SMD|FGH40T100SMD-F155|TO-247 G03|-|-|30ea| ## Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted |Electric|al Characteristics of the I|BTTC= 25°C unless otherwise noted||||| |---|---|---|---|---|---|---| |Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Unit| |Off Characteristics||||||| |BVCES|Collector to Emitter Breakdown Voltage|VGE= 0 V, IC= 1 mA|1000|-|-|V| |∆BVCES
∆TJ|Temperature Coefficient of Breakdown
Voltage|VGE= 0 V, IC= 250 uA|-|0.6|-|V/oC| |ICES|Collector Cut-Off Current|VCE= VCES, VGE= 0 V|-|-|1000|µA| |IGES|G-E Leakage Current|VGE= VGES, VCE= 0 V|-|-|±500|nA| |On Characteristics||||||| |VGE(th)|G-E Threshold Voltage|IC= 250 uA, VCE= VGE|4.2|5.3|6.5|V| |VCE(sat)|Collector to Emitter Saturation Voltage|IC= 40 A,VGE= 15 V|-|1.9|2.3|V| |||IC= 40 A,VGE= 15 V,
TC= 175oC|-|2.4|-|V| |Dynamic Characteristics||||||| |Cies|Input Capacitance|VCE= 30 V,VGE= 0 V,
f = 1 MHz|-|3980|5295|pF| |Coes|Output Capacitance||-|124|165|pF| |Cres|Reverse Transfer Capacitance||-|76|115|pF| |Switching Characteristics||||||| |td(on)|Turn-On Delay Time|VCC= 600 V, IC= 40 A,
RG= 10Ω, VGE= 15 V,
Inductive Load, TC= 25oC|-|29|38|ns| |tr|Rise Time||-|42|55|ns| |td(off)|Turn-Off Delay Time||-|285|371|ns| |tf|Fall Time||-|23|30|ns| |Eon|Turn-On Switching Loss||-|2.35|3.1|mJ| |Eoff|Turn-Off Switching Loss||-|1.15|1.5|mJ| |Ets|Total Switching Loss||-|3.5|4.6|mJ| |td(on)|Turn-On Delay Time|VCC= 600 V, IC= 40 A,
RG= 10Ω, VGE= 15 V,
Inductive Load, TC= 175oC|-|27|36|ns| |tr|Rise Time||-|49|64|ns| |td(off)|Turn-Off Delay Time||-|285|371|ns| |tf|Fall Time||-|20|26|ns| |Eon|Turn-On Switching Loss||-|4.4|5.7|mJ| |Eoff|Turn-Off Switching Loss||-|1.9|2.5|mJ| |Ets|Total Switching Loss||-|6.3|8.2|mJ| |Qg|Total Gate Charge||-|265|398|nC| |Qge|Gate to Emitter Charge|VCE= 600 V, IC= 40 A,
VGE= 15 V|-|32|48|nC| |Qgc|Gate to Collector Charge||-|135|203|nC| www.onsemi.com 2 |Electrical Characteristics of DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of DiodeTC= 25°C unless otherwise noted|Electrical Characteristics of DiodeTC= 25°C unless otherwise noted| |---|---|---|---|---|---|---|---| |Symbol|Parameter|Test Conditions||Min.|Typ.|Max|Unit| |VFM|Diode Forward Voltage|IF= 40 A|TC= 25oC|-|3.4|4.4|V| ||||TC= 175oC|-|2.6|-|| |trr|Diode Reverse Recovery Time||TC= 25oC|-|60|78|ns| ||||TC= 175oC|-|256|-|| |||IF=40 A, dIF/dt = 200 A/µs|||||| |Qrr|Diode Reverse Recovery Charge||TC= 25oC|-|185|260|nC| ||||TC= 175oC|-|1512|-|| ||||||||| www.onsemi.com 3 ## Typical Performance Characteristics Figure 1. Typical Output Characteristics **==> picture [220 x 600] intentionally omitted <==** **----- Start of picture text -----**
120
20V 15V TC = 25oC
12V
100
80
10V
60
40
20
VGE = 8V
0
0 2 4 6 8 10
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
120
Common Emitter
VGE = 15V
90 TC = 25oC
TC = 175oC
60
30
0
0 1 2 3 4 5
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25 o C
16
12
8
80A
40A
4
I C = 20A
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
[A]
C
Collector Current, I
[A]
C
Collector Current, I
[V]
CE
V
,
Collector-Emitter Voltage
**----- End of picture text -----**
Figure 2. Typical Output Characteristics **==> picture [224 x 386] intentionally omitted <==** **----- Start of picture text -----**
120
TC = 175oC 20V 12V
15V
90
10V
60
30 V GE = 8V
0
0 2 4 6
Collector-Emitter Voltage, VCE [V]
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
4
Common Emitter
VGE = 15V
80A
3
40A
2
I C = 20A
1
25 50 75 100 125 150 175
Case Temperature, TC [ [o] C]
[A]
C
Collector Current, I
[V]
CE
Collector-Emitter Voltage, V
**----- End of picture text -----**
Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE **==> picture [223 x 179] intentionally omitted <==** **----- Start of picture text -----**
20
Common Emitter
] TC = 175oC
[ 16
12
8
40A 80A
4
I C = 20A
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
V
CE
Collector-Emitter Voltage, V
**----- End of picture text -----**
www.onsemi.com 4 ## Typical Performance Characteristics **==> picture [469 x 609] intentionally omitted <==** **----- Start of picture text -----**
Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics
15
10000
Cies
12
400V
1000 200V VCC = 600V
9
C oes
6
100
Common Emitter Cres 3
VGE = 0V, f = 1MHz Common Emitter
TC = 25 o C TC = 25 o C
10 0
0.1 1 10 30 0 50 100 150 200 250 300
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]
Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
200 2000
1000
100
t d(off)
100
tr
Common Emitter t f Common Emitter
td(on) VCC = 600V, VGE = 15V 10 V CC = 600V, V GE = 15V
IC = 40A IC = 40A
TC = 25oC T C = 25 o C
TC = 175oC TC = 175 o C
10 1
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance, RG [ Ω ] Gate Resistance, RG [ Ω ]
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
10
1000
Eon Common Emitter
V GE = 15V, R G =10 Ω
TC = 25 o C
TC = 175oC
1 Eoff tr
100
Common Emitter
V CC = 600V, V GE = 15V
I C = 40A t d(on)
T C = 25oC
TC = 175oC
0.1 10
0 10 20 30 40 50 20 30 40 50 60 70 80
Gate Resistance, RG [ Ω ] Collector Current, IC [A]
[V]
GE
Capacitance [pF]
Gate-Emitter Voltage, V
Switching Time [ns] Switching Time [ns]
Switching Loss [mJ] Switching Time [ns]
**----- End of picture text -----**
www.onsemi.com 5 ## Typical Performance Characteristics ## Figure 13. Turn-off Characteristics vs. Collector Current ## Figure 14. Switching Loss vs. Collector Current **==> picture [470 x 600] intentionally omitted <==** **----- Start of picture text -----**
15
1000
10
t d(off) E on
100
1
Eoff
10 t f Common Emitter Common Emitter
V GE = 15V, R G = 10 Ω VGE = 15V, RG = 10 Ω
TC = 25 o C T C = 25oC
TC = 175oC TC = 175oC
1 0.1
20 30 40 50 60 70 80 20 30 40 50 60 70 80
Collector Current, IC [A] Collector Current, IC [A]
Figure 15. Load Current Vs. Frequence Figure 16. SOA Characteristics
300
100
VCC = 600V 100 10 µ s
load Current : peak of square wave
100 µ s
] 1ms
10 10 ms
DC
50 1
*Notes:
0.1
1. TC = 25 [o] C
Duty cycle : 50%
T = 125oC 2. TJ = 175 [o] C
C 3. Single Pulse
Powe Dissipation = 111 W 0.01
0 1 10 100 1000 2000
1k 10k 100k 1M
Collector-Emitter Voltage, VCE [V]
S it hi F f [H ]
Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current
80 21
TC = 25 [o] C
18
Tc = 175 o C TC = 175 [o] C
15 di F /dt = 200A/ µ s
Tc = 75oC
12
10
Tc = 25oC di F /dt = 100A/ µ s
9
6 diF/dt = 200A/ µ s
Tc = 25 o C
Tc = 75 o C --- 3 diF/dt = 100A/ µ s
Tc = 175oC
1 0
0 1 2 3 4 5 0 20 40 60 80
Forward Voltage, VF [V]
Forward Current, IF [A]
Switching Time [ns] Switching Loss [mJ]
Collector Current, I AC Collector Current, I [A]c
[A]
rr
[A]
F
Forward Current, I
Reverse Recovery Currnet, I
**----- End of picture text -----**
www.onsemi.com 6 ## Typical Performance Characteristics **==> picture [457 x 185] intentionally omitted <==** **----- Start of picture text -----**
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
360 2500
TC = 25 [o] C TC = 25 [o] C
300 T C = 175 [o] C --- 2000 TC = 175 [o] C
240
1500
180
di F /dt = 200A/ µ s di F /dt = 100A/ µ s 1000
120 diF/dt = 200A/ µ s diF/dt = 100A/ µ s
500
60
0 0
0 20 40 60 80 0 20 40 60 80
Forward Current, IF [A] Forward Current, IF [A]
[nC]
[ns]rr rr
Reverse Recovery Time, t Stored Recovery Charge, Q
**----- End of picture text -----**
Figure 21. Transient Thermal Impedance of IGBT **==> picture [354 x 389] intentionally omitted <==** **----- Start of picture text -----**
1
0.5
0.1 0.2
0.1
0.05
0.02
PDM
0.01 0.01
t1
single pulse t2
Duty Factor, D = t1/t2
[Peak T][j][ = Pdm x Zthjc + T] C
0.001
0.00001 0.0001 0.001 0.01 0.1
Rectangular Pulse Duration [sec]
Figure 22.Transient Thermal Impedance of Diode
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 PDM
single pulse t1
t2
Duty Factor, D = t1/t2
[Peak T][j][ = Pdm x Zthjc + T] C
0.001
0.00001 0.0001 0.001 0.01 0.1
Rectangular Pulse Duration [sec]
Thermal Response [Zthjc]
Thermal Response [Zthjc]
**----- End of picture text -----**
www.onsemi.com 7 ## Mechanical Dimensions ## Figure 23. TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB (Active) Package drawings are provided as a service to customers considering _ON Semiconductor_ components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a _ON_ Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of _ON Semiconductor_ ’s worldwide terms and conditions, specif-ically the warranty therein, which covers _ON Semiconductor_ products. Dimensions in Millimeters www.onsemi.com 8 ## Mechanical Dimensions ## Figure 23. TO-247 3L - TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS Package drawings are provided as a service to customers considering _ON Semiconductor_ components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a _ON_ Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of _ON Semiconductor_ ’s worldwide terms and conditions, specif-ically the warranty therein, which covers _ON Semiconductor_ products. www.onsemi.com 9 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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