# IGBT, 80 A, 1.8 V, 290 W, 600 V, TO-247AB, 3 Pins ![Product image](https://novapart.co/image/farnell:2083379/) **URL**: https://novapart.co/products/FGH40N60UFTU/igbt-80-a-18-v-290-w-600-to-247ab-3-pins **SKU**: FGH40N60UFTU **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €2.0600 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 290W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247AB | | Operating Temperature Max | 150°C | | Continuous Collector Current | 80A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 1.8V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2083379/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [50 x 8] intentionally omitted <==** **----- Start of picture text -----**
March 2015
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## **FGH40N60UF 600 V, 40 A Field Stop IGBT** ## **Features** - High Current Capability - Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A - High Input Impedance - Fast Switching ## **General Description** Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. - RoHS Compliant ## **Applications** - Solar Inverter, UPS, Welder, PFC **==> picture [40 x 86] intentionally omitted <==** **----- Start of picture text -----**
E
C
G
COLLECTOR
(FLANGE)
**----- End of picture text -----**
## **Absolute Maximum Ratings** |**Symbol**|**Description**|**Ratings**|**Unit**| |---|---|---|---| |VCES|Collector to Emitter Voltage|600|V| |VGES|Gate to Emitter Voltage|±20|V| ||Transient Gate-to-Emitter Voltage|±30|| |IC|Collector Current
@ TC= 25oC|80|A| ||Collector Current
@ TC= 100oC|40|A| |ICM (1)|Pulsed Collector Current @ TC= 25oC|120|A| |PD|Maximum Power Dissipation
@ TC= 25oC|290|W| ||Maximum Power Dissipation
@ TC= 100oC|116|W| |TJ|Operating Junction Temperature|-55 to +150|oC| |Tstg|Storage Temperature Range|-55 to +150|oC| |TL|Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds|300|oC| **1** ©2008 Fairchild Semiconductor Corporation FGH40N60UF Rev. 1.6 www.fairchildsemi.com |**Symbol**
~~es~~|**Parameter**
~~rs~~|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |**Off Characteristics**
~~es~~
~~rs~~||||||| |BVCES
~~i~~|Collector to Emitter Breakdown Voltage V|Collector to Emitter Breakdown Voltage VGE= 0 V, IC= 250μA|600|-|-|V| |ΔBVCES/
ΔTJ
~~i~~|Temperature Coefficient of Breakdown
Voltage|VGE= 0 V, IC= 250μA|-|0.6|-|V/oC| |ICES
~~i~~
~~re~~|Collector Cut-Off Current
~~rs ers~~|VCE= VCES, VGE= 0 V
~~ers~~|-
~~rs~~|-
~~rs~~|250|μA| |IGES
~~i~~
~~re~~|G-E Leakage Current
~~rs ers~~|VGE= VGES, VCE= 0 V
~~ers~~|-
~~rs~~|-
~~rs~~|±400|nA| |**On Characteristics**
~~re~~
~~rs ers rs~~||||||| |VGE(th)|G-E Threshold Voltage|IC= 250μA, VCE= VGE
~~ee~~|4.0
~~ee~~|5.0
~~ee~~|6.5
~~ee~~|V
~~ee~~| |VCE(sat)
~~a~~|Collector to Emitter Saturation Voltage
~~a~~|IC= 40 A,VGE= 15 V
~~a~~
~~ee~~|-
~~a~~
~~ee~~|1.8
~~a~~
~~ee~~|2.4
~~a~~
~~ee~~|V
~~a~~
~~ee~~| |||IC= 40 A,VGE= 15 V,
TC= 125oC
~~a~~
~~ee~~|-
~~a~~
~~ee~~|2.0
~~a~~
~~ee~~|-
~~a~~
~~ee~~|V
~~a~~
~~ee~~| |**Dynamic Characteristics**
~~a~~
~~ee ee~~||||||| |Cies
~~—~~|Input Capacitance|VCE= 30 V,VGE= 0 V,
f = 1 MHz|-|2110|-|pF| |Coes
~~—~~|Output Capacitance||-|200|-|pF| |Cres
~~—~~|Reverse Transfer Capacitance||-|60|-|pF| |**Switching Characteristics**
~~—~~||||||| |td(on)|Turn-On Delay Time|VCC= 400 V, IC= 40 A,
RG= 10Ω, VGE= 15 V,
Inductive Load, TC= 25oC|-|24|-|ns| |tr|Rise Time||-|44|-|ns| |td(off)|Turn-Off Delay Time||-|112|-|ns| |tf|Fall Time||-|30|60|ns| |Eon|Turn-On Switching Loss||-|1.19|-|mJ| |Eoff|Turn-Off Switching Loss||-|0.46|-|mJ| |Ets|Total Switching Loss||-|1.65|-|mJ| |td(on)|Turn-On Delay Time|VCC= 400 V, IC= 40 A,
RG= 10Ω, VGE= 15 V,
Inductive Load, TC= 125oC|-|24|-|ns| |tr|Rise Time||-|45|-|ns| |td(off)|Turn-Off Delay Time||-|120|-|ns| |tf|Fall Time||-|40|-|ns| |Eon|Turn-On Switching Loss||-|1.2|-|mJ| |Eoff|Turn-Off Switching Loss||-|0.69|-|mJ| |Ets|Total Switching Loss||-|1.89|-|mJ| |Qg|Total Gate Charge|VCE= 400 V, IC= 40 A,
VGE= 15 V|-|120|-|nC| |Qge|Gate to Emitter Charge||-|14|-|nC| |Qgc|Gate to Collector Charge||-|58|-|nC| **2** ©2008 Fairchild Semiconductor Corporation FGH40N60UF Rev. 1.6 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [533 x 608] intentionally omitted <==** **----- Start of picture text -----**
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
120 120
TC = 25oC 20V 15V 12V TC = 125oC 20V 15V
100 ey pa ee 100 ee 12V
80 RW 80
60 TCU 60 ff
10V 10V
40 40
20 20 V GE = 8V
V GE = 8V
0 Jor 0 ——
0.0 1.5 3.0 4.5 6.0 0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
120 120
Common Emitter Common Emitter
100 ee VTCGE = 25 = 15VoC en 7 ee 100 VTCCE = 25 = 20V ee o C
TC = 125oC TC = 125 o C
80 Pipa 80 |eSEELEY
60 60
Sena)74 nas SEEDED EDREy
40 Ht) 40 Ee
20 aoee ee 20 eee 4
0 AS 0 ee
0 1 2 3 4 5 6 7 8 9 10 11 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.5
Common Emitter 20
VGE = 15V Common Emitter
3.0 TC = - 40 o C
po 80A 16 tp
2.5
pee 12 Py
40A
2.0
8
PP eae
1.5 IC = 20A 40A 80A
4
See Ee IC = 20A
1.0 fF ff 0 |Yee
25 50 75 100 125 4 8 12 16 20
Case Temperature, TC [ [o] C] Gate-Emitter Voltage, VGE [V]
[A]C [A]C
Collector Current, I Collector Current, I
FGH40N60UF — 600 V, 40 A Field Stop IGBT
[A]
[A] C
C Collector Current, I
Collector Current, I
[V]
CE [V]
CE
V
,
Collector-Emitter Voltage, V Collector-Emitter Voltage
**----- End of picture text -----**
**3** ©2008 Fairchild Semiconductor Corporation FGH40N60UF Rev. 1.6 www.fairchildsemi.com ## **Typical Performance Characteristics** **Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE** **==> picture [425 x 572] intentionally omitted <==** **----- Start of picture text -----**
20 20
Common Emitter Common Emitter
TC = 25 o C TC = 125 o C
16 Tre 16 po
12 fen Se e ee 12
8 8
PES} 40A 80A EE 40A 80A
4 4
I C = 20A IC = 20A
0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
5000 15
Common Emitter Common Emitter
V GE = 0V, f = 1MHz TC = 25 o C
4000 C iss TC = 25 o C 12
200V
Vcc = 100V 300V
3000 9
2000 Coss 6
1000 eo} 3
Crss
0 TaSse) 0 (ES
0.1 1 10 30 0 50 100 150
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
400 200
100 10 μ s
100
10 100 μ s
1ms tr
10 ms
1 PASE DC FEES td(on)
Common Emitter
ST Single Nonrepetitive Ee VCC = 400V, VGE = 15V
0.1 Pulse TC = 25 [o] C IC = 40A
Curves must be deratedlinearly with increase TC = 25oC
in temperature TC = 125oC
0.01 =e 10 =
1 Pa 10 100 1000 0 AT 10 20 30 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [ Ω ]
]
[V] V
CE [
V, CE
Collector-Emitter Voltage Collector-Emitter Voltage, V
[V]
GE
Capacitance [pF] Gate-Emitter Voltage, V
Collector Current, I [A]c Switching Time [ns]
**----- End of picture text -----**
**Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics** **Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs. Gate Resistance** **4** ©2008 Fairchild Semiconductor Corporation FGH40N60UF Rev. 1.6 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [435 x 19] intentionally omitted <==** **----- Start of picture text -----**
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
**----- End of picture text -----**
**==> picture [469 x 590] intentionally omitted <==** **----- Start of picture text -----**
5500 500
Common Emitter Common Emitter
VCC = 400V, VGE = 15V VGE = 15V, RG = 10 Ω
IC = 40A TC = 25oC
1000 TTCC = 25 = 125 o C oC td(off) 100 TC = 125oC tr
100 t
d(on)
t f
10 eee 10 [eT
0 10 20 30 40 50 20 40 60 80
Gate Resistance, RG [ Ω ] Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate Resistance
Collector Current
600 10
Common Emitter Common Emitter
V GE = 15V, R G = 10 Ω VCC = 400V, VGE = 15V
TC = 25 o C IC = 40A
T C = 125oC T C = 25oC
td(off) TC = 125 o C
100 E on
t f
Eoff
1
10 PEP) 0.3 ee
20 40 60 80 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG [ Ω ]
Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching
SOA Characteristics
10 200
Common Emitter
V GE = 15V, R G = 10 Ω 100
T C = 25 o C E on
TC = 125 o C
1 Eoff
10
Safe Operating Area
VGE = 15V, TC = 125oC
0.1 ere| 1 7AELT]
20 40 60 80 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]
Switching Time [ns] Switching Time [ns]
Switching Time [ns] Switching Loss [mJ]
[A]
C
Switching Loss [mJ]
Collector Current, I
**----- End of picture text -----**
**5** ©2008 Fairchild Semiconductor Corporation FGH40N60UF Rev. 1.6 www.fairchildsemi.com ## **Typical Performance Characteristics** ## **Figure 19.Transient Thermal Impedance of IGBT** **==> picture [301 x 142] intentionally omitted <==** **----- Start of picture text -----**
1 ee eee aces eee
0.5
0.1 0.2
0.1
0.05
0.02
0.01 0.01 P DM
single pulse t1
t2
Duty Factor, D = t1/t2
[Peak T][j][ = Pdm x Zthjc + T] C
1E-3 Fi gui gn ak
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]
Thermal Response [Zthjc]
**----- End of picture text -----**
**6** ©2008 Fairchild Semiconductor Corporation FGH40N60UF Rev. 1.6 www.fairchildsemi.com **==> picture [571 x 759] intentionally omitted <==** **----- Start of picture text -----**
[15.87] [E] [4.82] 4.58 [E] B
15.37
A
4.13 12.81 E
3.53 6.85 3.65
[E]
6.61 3.51
0.254 [M] B A [M]
[5.58] [E]
5.34 [1.35]
5.20 0.51
4.96
[20.82] 20.32 [E] 13.08 MIN
1 2 3 3
1
[1.87]
[3.93] [E] 1.53 [ (2X) ]
3.69 [16.25] [E]
15.75
1.60
[2.77]
2.43
[0.71]
5.56 0.51
[1.35] [2.66]
1.17 2.29
0.254 [M] B A [M]
11.12
NOTES: UNLESS OTHERWISE SPECIFIED.
A. PACKAGE REFERENCE: JEDEC TO-247,
ISSUE E, VARIATION AB, DATED JUNE, 2004.
B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DRAWING CONFORMS TO ASME Y14.5 - 1994
E DOES NOT COMPLY JEDEC STANDARD VALUE
F. DRAWING FILENAME: MKT-TO247A03_REV04
**----- End of picture text -----**
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