# IGBT, 80 A, 1.9 V, 349 W, 600 V, TO-247AB, 3 Pins

![Product image](https://novapart.co/image/farnell:2083378/)

**URL**: https://novapart.co/products/FGH40N60SMD/igbt-80-a-19-v-349-w-600-to-247ab-3-pins
**SKU**: FGH40N60SMD
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.9100
**Stock**: 100+
**Lead Time**: 99 days (indicative)

## Description

DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AB; No. of

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 349W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AB |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2083378/)

## **Is Now Part of** 

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## FGH40N60SMD 600 V, 40 A Field Stop IGBT 

## Features 

- Maximum Junction Temperature : TJ = 175[o] C 

- Positive Temperaure Co-efficient for Easy Parallel Operating 

- High Current Capability 

- Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A 

## General Description 

Using novel field stop IGBT technology, Fairchild’s new series of field stop 2[nd] generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. 

- High Input Impedance 

- Fast Switching: EOFF = 6.5 uJ/A 

- Tighten Parameter Distribution 

- RoHS Compliant 

## Applications 

- Solar Inverter, UPS, Welder, PFC, Telecom, ESS 

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E C<br>C<br>G<br>G<br>COLLECTOR<br>(FLANGE) < E<br>**----- End of picture text -----**<br>


## Absolute Maximum Ratings 

|Symbol<br>~~a~~|Description<br>~~Ge~~|Ratings<br>~~Ge~~|Unit<br>~~Ge~~|
|---|---|---|---|
|VCES<br>~~i~~|Collector to Emitter Voltage<br>|600<br>|V<br>|
|VGES<br><br>~~—_~~|Gate to Emitter Voltage<br>~~eG~~<br>~~—_~~<br>~~°°&»°»}»©=©»=©°.|,drCOM~~|± 20<br>~~eG~~<br>~~»°»}»©=©»=©°.|,drCOM~~|V<br>~~eG~~<br>~~»°»}»©=©»=©°.|,drCOM~~|
||Transient Gate to Emitter Voltage<br>~~—_~~<br>~~°°&»°»}»©=©»=©°.|,drCOM~~|± 30<br>~~»°»}»©=©»=©°.|,drCOM~~|V<br>~~»°»}»©=©»=©°.|,drCOM~~|
|IC<br>~~—_~~<br>~~Ee~~<br>~~a~~|Collector Current<br>@ TC= 25oC<br>~~—_~~<br>~~°°& »°»}»©=©»=©°.|,drCOM~~<br>~~a~~<br>~~Ee~~<br>~~#|~~<br>|80<br>~~»°»}»©=©»=©°.|,drCOM~~<br>~~a~~<br>~~#|~~<br>~~may~~<br>|A<br>~~»°»}»©=©»=©°.|,drCOM~~<br>~~a~~<br>~~may~~<br>|
||Collector Current<br>@ TC= 100oC<br>~~Ee~~<br>~~#|~~<br>|40<br>~~#|~~<br>~~may~~<br>|A<br>~~may~~<br>|
|ICM(1)<br>~~Ee~~<br>~~a a~~|Pulsed Collector Current                           @ TC= 25oC<br>~~Ee~~<br>~~#|~~<br>~~a~~|120<br>~~#|~~<br>~~may~~<br>~~a~~|A<br>~~may~~<br>~~a~~|
|IF<br>~~a~~<br>~~|~~<br>~~a~~<br>~~—_~~|Diode Forward Current<br>@ TC= 25oC<br>~~a~~<br>~~|~~|40<br>~~a~~<br><br>~~|~~|A<br>~~a~~<br><br>~~||~~|
||Diode Forward Current<br>@ TC= 100oC<br>~~|Sn~~<br>~~===—~~<br>~~—_~~|20<br>~~Sn~~<br>~~|~~<br>~~|~~|A<br>~~Sn~~<br>~~||~~|
|IFM(1)<br>~~|~~<br>~~a~~<br>~~—_~~|Pulsed Diode Maximum Forward Current<br>~~|~~<br>~~===—~~<br>~~—_~~|120<br><br>~~|~~<br>~~|~~|A<br><br>~~| |~~|
|PD<br>~~—_~~<br>~~I~~|Maximum Power Dissipation<br>@ TC= 25oC<br>~~===—~~<br>~~—_~~<br>~~|~~<br>|349<br>~~|~~<br>~~&},—RAY)~~<br>~~=)~~<br>|W<br>~~&},—RAY)~~<br>~~=)~~<br>|
||Maximum Power Dissipation<br>@ TC= 100oC<br>~~===—~~<br>~~—_~~<br>~~OE~~<br>|174<br>~~|~~<br>~~OE~~<br>~~=)~~<br>|W<br>~~OE~~<br>~~=)~~<br>|
|TJ<br>~~I~~|Operating Junction Temperature<br>|-55 to +175<br>~~=)~~<br>|oC<br>~~=)~~<br>|
|Tstg<br>~~a~~|Storage Temperature Range<br>~~a~~|-55 to +175<br>~~a~~|oC<br>~~a~~|
|TL|Maximum Lead Temp. for soldering<br>Purposes, 1/8” from case for 5 seconds|300|oC|



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## Thermal Characteristics 

|Electrical Characteristics of the IGBT|Electrical Characteristics of the IGBT|Electrical Characteristics of the IGBTTC= 25°C unless otherwise noted|||||
|---|---|---|---|---|---|---|
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Unit|
|Off Characteristics|||||||
|BVCES|Collector to Emitter Breakdown Voltage V|Collector to Emitter Breakdown Voltage VGE= 0 V, IC= 250µA|600|-|-|V|
|∆BVCES<br>∆TJ|Temperature Coefficient of Breakdown<br>Voltage|VGE= 0 V, IC= 250µA|-|0.6|-|V/oC|
|ICES<br>~~=e~~|Collector Cut-Off Current<br>~~=e~~|VCE= VCES, VGE= 0 V<br>~~=e~~|-<br>~~=e~~|-<br>~~=e~~|250<br>~~=e~~|µA<br>~~=e~~|
|IGES<br>~~=e~~|G-E Leakage Current<br>~~=e~~|VGE= VGES, VCE= 0 V<br>~~=e~~|-<br>~~=e~~|-<br>~~=e~~|± 400<br>~~=e~~|nA<br>~~=e~~|
|On Characteristics<br>~~=e~~|||||||
|VGE(th)<br>~~=e~~|G-E Threshold Voltage<br>~~=e~~|IC= 250µA, VCE= VGE<br>~~=e~~|3.5<br>~~=e~~|4.5<br>~~=e~~|6.0<br>~~=e~~|V<br>~~=e~~|
|VCE(sat)<br>~~=e~~|Collector to Emitter Saturation Voltage<br>~~=e~~|IC= 40 A,VGE= 15 V<br>~~=e~~|-<br>~~=e~~|1.9<br>~~=e~~|2.5<br>~~=e~~|V<br>~~=e~~|
|||IC= 40 A,VGE= 15 V,<br>TC= 175oC<br>~~=e~~|-<br>~~=e~~|2.1<br>~~=e~~|-<br>~~=e~~|V<br>~~=e~~|
|Dynamic Characteristics<br>~~2~~|||||||
|Cies<br>~~.——~~|Input Capacitance<br>~~.——~~|VCE= 30 V,VGE= 0 V,<br>f = 1 MHz<br>~~.——~~|-<br>~~.——~~|1880<br>~~.——~~|-<br>~~.——2~~|pF<br>~~.——2~~|
|Coes<br>~~.——~~|Output Capacitance<br>~~.——~~||-<br>~~.——~~|180<br>~~.——~~|-<br>~~.——2~~|pF<br>~~.——2~~|
|Cres<br>~~.——~~|Reverse Transfer Capacitance<br>~~.——~~||-<br>~~.——~~|50<br>~~.——~~|-<br>~~.——2~~|pF<br>~~.——2~~|
|Switching Characteristics<br>~~.——2~~|||||||
|td(on)<br>~~.——~~|Turn-On Delay Time<br>~~.——~~|VCC= 400 V, IC= 40 A,<br>RG= 6Ω, VGE= 15 V,<br>Inductive Load, TC= 25oC<br>~~.——~~|-<br>~~.——~~|12<br>~~.——~~|16<br>~~.——2~~|ns<br>~~.——2~~|
|tr<br>~~.——~~|Rise Time<br>~~.——~~||-<br>~~.——~~|20<br>~~.——~~|28<br>~~.——2~~|ns<br>~~.——2~~|
|td(off)<br>|Turn-Off Delay Time<br>||-<br>|92<br>|120<br>~~2~~|ns<br>~~2~~|
|tf|Fall Time||-|13|17|ns|
|Eon|Turn-On Switching Loss||-|0.87|1.30|mJ|
|Eoff|Turn-Off Switching Loss||-|0.26|0.34|mJ|
|Ets|Total Switching Loss||-|1.13|1.64|mJ|
|td(on)<br>~~Sores~~|Turn-On Delay Time<br>~~Sores~~|VCC= 400 V, IC= 40 A,<br>RG= 6Ω, VGE= 15 V,<br>Inductive Load, TC= 175oC<br>~~Sores~~|-<br>~~Sores~~|15<br>~~Sores~~|-<br>~~Sores~~|ns<br>~~Sores~~|
|tr<br>~~Sores~~|Rise Time<br>~~Sores~~||-<br>~~Sores~~|22<br>~~Sores~~|-<br>~~Sores~~|ns<br>~~Sores~~|
|td(off)<br>~~Sores~~|Turn-Off Delay Time<br>~~Sores~~||-<br>~~Sores~~|116<br>~~Sores~~|-<br>~~Sores~~|ns<br>~~Sores~~|
|tf<br>~~Sores~~|Fall Time<br>~~Sores~~||-<br>~~Sores~~|16<br>~~Sores~~|-<br>~~Sores~~|ns<br>~~Sores~~|
|Eon<br>~~Sores~~|Turn-On Switching Loss<br>~~Sores~~||-<br>~~Sores~~|0.97<br>~~Sores~~|-<br>~~Sores~~|mJ<br>~~Sores~~|
|Eoff<br>~~Sores~~|Turn-Off Switching Loss<br>~~Sores~~||-<br>~~Sores~~|0.60<br>~~Sores~~|-<br>~~Sores~~|mJ<br>~~Sores~~|
|Ets<br>~~Sores~~|Total Switching Loss<br>~~Sores~~||-<br>~~Sores~~|1.57<br>~~Sores~~|-<br>~~Sores~~|mJ<br>~~Sores~~|



www.fairchildsemi.com 

Electrical Characteristics of the IGBT  (Continued) 

|Electrical Characteristics of the DiodeTC= 25°C unless otherwise noted<br>Symbol<br>Parameter<br>Test Conditions<br>Min.<br>Typ.<br>Max<br>Unit<br>Qg<br>Total Gate Charge<br>VCE= 400 V, IC= 40 A,<br>VGE= 15 V<br>-<br>119<br>180<br>nC<br>Qge<br>Gate to Emitter Charge<br>-<br>13<br>20<br>nC<br>Qgc<br>Gate to Collector Charge<br>-<br>58<br>90<br>nC<br>Symbol<br>Parameter<br>Test Conditions<br>Min.<br>Typ.<br>Max<br>Unit<br>VFM<br>Diode Forward Voltage<br>IF= 20 A<br>TC= 25oC<br>-<br>2.3<br>2.8<br>V<br>TC= 175oC<br>-<br>1.67<br>-<br>Erec<br>Reverse Recovery Energy<br>IF=20 A, dIF/dt = 200 A/µs<br>TC= 175oC<br>-<br>48.9<br>-<br>uJ<br>trr<br>Diode Reverse Recovery Time<br>TC= 25oC<br>-<br>36<br>-<br>ns<br>TC= 175oC<br>-<br>110<br>-<br>Qrr<br>Diode Reverse Recovery Charge<br>TC= 25oC<br>-<br>46.8<br>-<br>nC<br>TC= 175oC<br>-<br>445<br>-<br>~~ES~~|
|---|



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## Typical Performance Characteristics 

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120 120<br>T C = 25oC 15V20V 12V T C = 175oC 15V20V 12V 10V<br>100 Soo 10V 100 pee<br>80 oe 80 oe<br>60 60<br>fee nee ee e/a<br>VGE = 8V VGE = 8V<br>40 40<br>20 20<br>0 0<br>0 2 4 6 0 2 4 6<br>Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]<br>Figure 3. Typical Saturation Voltage                                      Figure 4. Saturation Voltage vs. Case<br>                  Characteristics                                                       Temperature at Variant Current Level<br>120 3.0<br>Common Emitter<br>Common Emitter VGE = 15V<br>100 (ee VTCGE = 25 = 15VoC en 27d 2.5 80A<br>80 TC = 175oC<br>aaa pe<br>60 2.0<br>omy Ze Gn Ee<br>40A<br>40<br>1.5<br>20 PAT ee I C = 20A<br>0 ATF) 1.0 EEE<br>0 1 2 3 4 25 50 75 100 125 150 175<br>Collector-Emitter Voltage, VCE [V] Case Temperature, TC [ [o] C]<br>Figure 5. Saturation Voltage vs. VGE                       Figure 6. Saturation Voltage vs. VGE<br>20 20<br>Common Emitter Common Emitter<br>TC = -40 o C TC = 175oC<br>16 ft} | Ld 16 P|<br>12 12<br>ale PH<br>8 ene ee 8 PH<br>40A<br>80A 80A<br>4 Po 4 ee 40A<br>IC = 20A<br>IC = 20A<br>0 a 0<br>4 8 12 16 20 4 8 12 16 20<br>Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]<br> [A]  [A]<br>C C<br>Collector Current, I Collector Current, I<br> [V]<br>CE<br> [A]<br>C<br>Collector Current, I<br>Collector-Emitter Voltage, V<br> [V]<br>CE  [V]<br>V CE<br>,<br>Collector-Emitter Voltage<br>Collector-Emitter Voltage, V<br>**----- End of picture text -----**<br>


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## Typical Performance Characteristics 

Figure 7. Capacitance Characteristics                      Figure 8. Gate charge Characteristics 

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4000 15<br>Common Emitter<br>Common Emitter V GE  = 0V, f = 1MHz TC = 25 o C 400V<br>o 12<br>3000 TC = 25 C VCC = 200V<br>300V<br>9<br>Cies<br>2000<br>6<br>1000 Coes 3<br>PS) Cres =<br>0 in|. 0<br>0.1 1 10 30 0 40 80 120<br>Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]<br>Figure 9. Turn-on Characteristics vs.                   Figure 10. Turn-off Characteristics vs.<br>                Gate Resistance                                                         Gate Resistance<br>100 1000<br>t r t<br>d(off)<br>100<br>td(on)<br>10 t f<br>Common Emitter<br>V CC = 400V, V GE = 15V 10 Common Emitter<br>I C = 40A _ aT V CC tt  = 400V, V GE  = 15V<br>TTCC = 25 = 175oC  oC ITT C CC = 40A = 25 = 175 o C  oC<br>1 Le 1 FR<br>0 10 20 30 40 50 0 10 20 30 40 50<br>Gate Resistance, RG [ Ω ] Gate Resistance, RG [ Ω ]<br>Figure 11. Switching Loss vs.                                 Figure 12. Turn-on Characteristics vs.<br>                  Gate Resistance                                                        Collector Current<br>5 1000<br>Common Emitter<br>V GE  = 15V, R G  = 6 Ω<br>T C = 25oC<br>Eon Oe 100 CE T C  = 175oC tr<br>1<br>E off Common Emitter<br>VCC = 400V, VGE = 15V 10 td(on)<br>I C  = 40A<br>T C  = 25 o C<br>TC = 175oC<br>0.1 CoieAL: 1 boo<br>0 10 20 30 40 | 50 20 PRPEEP 30 40 50 60 70 80<br>Gate Resistance, RG [ Ω ] Collector Current, IC [A]<br> [V]<br>GE<br>Capacitance [pF] Gate-Emitter Voltage, V<br>Switching Time [ns] Switching Time [ns]<br>Switching Loss [mJ] Switching Time [ns]<br>**----- End of picture text -----**<br>


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## Typical Performance Characteristics 

Figure 13. Turn-off Characteristics vs.                     Figure 14. Switching Loss vs. Collector Current                                                        Collector Current 

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1000 6<br>t<br>d(off)<br>100<br>1 E on<br>t f<br>Te<br>E off<br>10 Common Emitter Common Emitter<br>V GE  = 15V, R G  = 6 Ω V GE  = 15V, R G  = 6 Ω<br>TC = 25 o C   T C  = 25 o C<br>TC = 175oC TC = 175oC<br>1 Lz] 0.1 fee<br>20 30 40 50 60 70 80 20 30 40 50 60 70 80<br>Collector Current, IC [A] Collector Current, IC [A]<br>Figure 15. Load Current Vs. Frequency                    Figure 16. SOA Characteristics<br>250 300<br>Square WaveTJ <= 175 o C, D = 0.5, VCE = 400V 100 10 µ s<br>200 V GE  = 15/0V, R G  = 6 Ω 100 µ s<br>1ms<br>10 10 ms<br>150 DC<br>T C  = 75oC<br>1<br>100<br>TC = 100 o C 0.1 *Notes:<br>50    1. TC = 25 [o] C<br>   2. TJ = 175 [o] C<br>   3. Single Pulse<br>0 ot— 0.01 eeea<br>1k 10k 100k 1M 1 10 100 1000<br>Switching Frequency, f[Hz] Collector-Emitter Voltage, VCE [V]<br> Figure 17. Forward Characteristics                                                             Figure 18. Reverse Recovery Current<br>100 12<br>T C = 25 [o] C<br>10 T C  = 175 [o] C<br>diF/dt = 200A/ µ s<br>8<br>TC = 175oC<br>10 Ay 6 SE<br>diF/dt = 100A/ µ s<br>T C = 25 o C<br>4<br>di F /dt = 200A/ µ s<br>TTCC = 25 = 175 o C    oC   2 diF/dt = 100A/ µ s<br>1 ey)Ata 0 CES<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40<br>Forward Voltage, VF [V] Forward Current, IF [A]<br>Switching Time [ns] Switching Loss [mJ]<br> [A]c<br>Collector Current, [A]<br>Collector Current, I<br> [A]<br>rr<br> [A]<br>F<br>Forward Current, I<br>Reverse Recovery Currnet, I<br>**----- End of picture text -----**<br>


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## Typical Performance Characteristics 

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Figure 19. Reverse Recovery Time                             Figure 20. Stored Charge<br>200 700<br>TC = 25oC TC = 25 o C<br>TC = 175oC 600 TC = 175 o C<br>150 eee pel<br>500<br>a Eaneneen<br>400<br>100 EEC) Geee be oone<br>= EEE<br>diF/dt = 100A/ µ s 300<br>diF/dt = 200A/ µ s 200 diF/dt = 200A/ µ s diF/dt = 100A/ µ s<br>50<br>er) | [ft] 100 eeeBREE TLE<br>0 Hamman 0 Ce<br>0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 45<br>Forward Current, IF [A]  Forwad Current, IF [A]<br>                                    Figure 21. Transient Thermal Impedance of IGBT<br>1<br>Se<br>0.5<br>0.1 0.2<br>0.1<br>0.05<br>0.02<br>0.01 0.01 single pulse P DM<br>t1<br>t 2<br>Duty Factor, D = t1/t2<br>[Peak T][j][ = Pdm x Zthjc + T] C<br>0.001 ae<br>10-5 10-4 10-3 10-2 10-1 100<br>Rectangular Pulse Duration [sec]<br> [ns]rr  [nC]rr<br>Reverse Recovery Time, t Stored Recovery Charge, Q<br>Thermal Response [Zthjc]<br>**----- End of picture text -----**<br>


Figure 22. Time Transient Thermal Impedance of Diode 

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3<br>1 0.5<br>0.2<br>0.1<br>0.1 0.05 PDM<br>0.02 t 1<br>0.01 t2<br>single pulse Duty Factor, D = t1/t2<br>[Peak T] [j] [ = Pdm x Zthjc + T] C<br>0.01<br>10-5 10-4 10-3 10-2 10-1 100<br>Rectangular Pulse Duration [sec]<br>Thermal Response [Zthjc]<br>**----- End of picture text -----**<br>


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[15.87] [E] [4.82] 4.58 [E] B<br>15.37<br>A<br>4.13   12.81  E<br>3.53 6.85 3.65<br>[E]<br>6.61 3.51<br>0.254 [M] B A [M]<br>[5.58] [E]<br>5.34 [1.35]<br>5.20 0.51<br>4.96<br>[20.82] 20.32 [E]   13.08 MIN<br>1 2 3 3<br>1<br>[1.87]<br>[3.93] [E] 1.53 [ (2X)  ]<br>3.69 [16.25] [E]<br>15.75<br>  1.60<br>[2.77]<br>2.43<br>[0.71]<br>5.56 0.51<br>[1.35] [2.66]<br>1.17 2.29<br>0.254 [M] B A [M]<br>11.12<br>NOTES: UNLESS OTHERWISE SPECIFIED.<br>   A.  PACKAGE REFERENCE: JEDEC TO-247,<br>          ISSUE E, VARIATION AB, DATED JUNE, 2004.<br>   B.  DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD<br>        FLASH, AND TIE BAR EXTRUSIONS.<br>   C.  ALL DIMENSIONS ARE IN MILLIMETERS.<br>   D.  DRAWING CONFORMS TO ASME Y14.5 - 1994<br>E DOES NOT COMPLY JEDEC STANDARD VALUE<br>    F.   DRAWING FILENAME: MKT-TO247A03_REV04<br>**----- End of picture text -----**<br>


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