# IGBT, General Purpose, 80 A, 2.3 V, 290 W, 600 V, TO-247AB, 3 Pins ![Product image](https://novapart.co/image/farnell:1885745/) **URL**: https://novapart.co/products/FGH40N60SFTU/igbt-general-purpose-80-a-23-v-290-w-600-to-247ab **SKU**: FGH40N60SFTU **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €3.3800 **Stock**: 50+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 290W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247AB | | Operating Temperature Max | 150°C | | Continuous Collector Current | 80A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 2.3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1885745/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [50 x 8] intentionally omitted <==** **----- Start of picture text -----**
March 2015
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## **FGH40N60SF** ## **600 V, 40 A Field Stop IGBT** ## **Features** - High Current Capability - Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A - High Input Impedance - Fast Switching: EOFF = 8 uJ/A ## **General Description** Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. - RoHS Compliant ## **Applications** - Solar Inverter, UPS, Welder, PFC **==> picture [38 x 76] intentionally omitted <==** **----- Start of picture text -----**
E
C
G
COLLECTOR
(FLANGE)
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C
G
E
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## **Absolute Maximum Ratings** |**Symbol**|**Description**|**Ratings**|**Unit**| |---|---|---|---| |VCES|Collector to Emitter Voltage|600|V| |VGES|Gate to Emitter Voltage|±20|V| ||Transient Gate-to-Emitter Voltage|±30|| |IC|Collector Current
@ TC= 25oC|80|A| ||Collector Current
@ TC= 100oC|40|A| |ICM (1)|Pulsed Collector Current @ TC= 25oC|120|A| |PD|Maximum Power Dissipation
@ TC= 25oC|290|W| ||Maximum Power Dissipation
@ TC= 100oC|116|W| |TJ|Operating Junction Temperature|-55 to +150|oC| |Tstg|Storage Temperature Range|-55 to +150|oC| |TL|Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds|300|oC| **Notes:** 1: Repetitive rating: Pulse width limited by max. junction temperature ## **Thermal Characteristics** |**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---| |RθJC(IGBT)|Thermal Resistance, Junction to Case|-|0.43|oC/W| |RθJA|Thermal Resistance, Junction to Ambient|-|40|oC/W| **1** ©2009 Fairchild Semiconductor Corporation FGH40N60SF Rev.1.5 www.fairchildsemi.com |**Symbol**
~~es~~|**Parameter**
~~rs~~|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |**Off Characteristics**
~~es~~
~~rs~~||||||| |BVCES
~~i~~|Collector to Emitter Breakdown Voltage V|Collector to Emitter Breakdown Voltage VGE= 0 V, IC= 250μA|600|-|-|V| |ΔBVCES/
ΔTJ
~~i~~|Temperature Coefficient of Breakdown
Voltage|VGE= 0 V, IC= 250μA|-|0.6|-|V/oC| |ICES
~~i~~|Collector Cut-Off Current
~~rs rrr~~|VCE= VCES, VGE= 0 V
~~rrr~~|-
~~rs~~|-
~~rs~~|250|μA| |IGES
~~i~~
~~a~~|G-E Leakage Current
~~rs rrr~~|VGE= VGES, VCE= 0 V
~~rrr~~|-
~~rs~~|-
~~rs~~|±400|nA| |**On Characteristics**
~~a~~
~~rs rrr~~
~~rs~~||||||| |VGE(th)|G-E Threshold Voltage|IC= 250μA, VCE= VGE
~~ee~~|4.0
~~ee~~|5.0
~~ee~~|6.5
~~ee~~|V
~~ee~~| |VCE(sat)
~~a~~|Collector to Emitter Saturation Voltage
~~a~~|IC= 40 A,VGE= 15 V
~~a~~
~~ee~~|-
~~a~~
~~ee~~|2.3
~~a~~
~~ee~~|2.9
~~a~~
~~ee~~|V
~~a~~
~~ee~~| |||IC= 40 A,VGE= 15 V,
TC= 125oC
~~a~~
~~ee~~|-
~~a~~
~~ee~~|2.5
~~a~~
~~ee~~|-
~~a~~
~~ee~~|V
~~a~~
~~ee~~| |**Dynamic Characteristics**
~~a~~
~~ee ee~~||||||| |Cies
~~—~~|Input Capacitance|VCE= 30 V,VGE= 0 V,
f = 1 MHz|-|2110|-|pF| |Coes
~~—~~|Output Capacitance||-|200|-|pF| |Cres
~~—~~|Reverse Transfer Capacitance||-|60|-|pF| |**Switching Characteristics**
~~—~~||||||| |td(on)|Turn-On Delay Time|VCC= 400 V, IC= 40 A,
RG= 10Ω, VGE= 15 V,
Inductive Load, TC= 25oC|-|25|-|ns| |tr|Rise Time||-|42|-|ns| |td(off)|Turn-Off Delay Time||-|115|-|ns| |tf|Fall Time||-|27|54|ns| |Eon|Turn-On Switching Loss||-|1.13|-|mJ| |Eoff|Turn-Off Switching Loss||-|0.31|-|mJ| |Ets|Total Switching Loss||-|1.44|-|mJ| |td(on)|Turn-On Delay Time|VCC= 400 V, IC= 40 A,
RG= 10Ω, VGE= 15 V,
Inductive Load, TC= 125oC|-|24|-|ns| |tr|Rise Time||-|43|-|ns| |td(off)|Turn-Off Delay Time||-|120|-|ns| |tf|Fall Time||-|30|-|ns| |Eon|Turn-On Switching Loss||-|1.14|-|mJ| |Eoff|Turn-Off Switching Loss||-|0.48|-|mJ| |Ets|Total Switching Loss||-|1.62|-|mJ| |Qg|Total Gate Charge|VCE= 400 V, IC= 40 A,
VGE= 15 V|-|120|-|nC| |Qge|Gate to Emitter Charge||-|14|-|nC| |Qgc|Gate to Collector Charge||-|58|-|nC| **2** ©2009 Fairchild Semiconductor Corporation FGH40N60SF Rev.1.5 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [533 x 605] intentionally omitted <==** **----- Start of picture text -----**
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
120 120
TC = 25oC TC = 125oC
20V
20V 15V
100 15V 100 12V
80 fi 80 FEL
12V
60 a Aa 60 Gann Ae
10V
40 40
10V
20 f- 20
| | fe
VGE = 8V VGE = 8V
0 ASS] 0 of
0.0 1.5 3.0 4.5 6.0 0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
80 120
Common Emitter
Common Emitter
V GE = 15V VCE = 20V
o
TC = 25oC TC = 25 C
60 manna TC = 125oC 80 TC = 125oC 7
40
40
20 | Eo
0 PVE] 0 Le
0 1 2 3 4 6 8 10 12 13
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
4.0
Common Emitter 20 Common Emitter
3.5 V GE = 15V TC = -40 o C
CEE 80A 16 yo
3.0
12
2.5 art HHT
40A
8
2.0
IC = 20A 40A 80A
1.5 4
eece EEE I C = 20A
1.0 Pf USE
0
25 50 75 100 125 4 8 12 16 20
Case Temperature, TC [ [o] C] Gate-Emitter Voltage, VGE [V]
Collector Current, I [A]C Collector Current, I [A]C
FGH40N60SF — 600 V, 40 A Field Stop IGBT
[A]
[A] C
C Collector Current, I
Collector Current, I
[V] [V]
CE CE
V
,
Collector-Emitter Voltage, V Collector-Emitter Voltage
**----- End of picture text -----**
**3** ©2009 Fairchild Semiconductor Corporation FGH40N60SF Rev.1.5 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [441 x 586] intentionally omitted <==** **----- Start of picture text -----**
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
TC = 25 o C TC = 125 o C
16 16
Teo = fy
128 Pa}I} 128
40A 80A 40A 80A
4 4
HE] I C = 20A | a IC = 20A
0 eS 0 LS
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
5000 15
Common Emitter Common Emitter
V GE = 0V, f = 1MHz TC = 25 o C
4000 C iss TC = 25 o C 12
200V
Vcc = 100V 300V
3000 9
2000 Coss 6
1000 3
aoe Crss en
0 SSS) 0 Fe
0.1 1 10 30 0 50 100 150
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
400 200
100 10 μ s
100
10 100 μ s
1ms
t r
10 ms
1 SS FE
DC
Single Nonrepetitive Common Emitter
VCC = 400V, VGE = 15V
0.1 Pulse TC = 25 [o] C t d(on) IC = 40A
Curves must be derated
linearly with increase TC = 25oC
in temperature TC = 125oC
0.01 eS 10 ee
1 10 100 Sei, 1000 0 10 20 30 = 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [ Ω ]
]
[V] V
CE [
V, CE
Collector-Emitter Voltage Collector-Emitter Voltage, V
[V]
GE
Capacitance [pF] Gate-Emitter Voltage, V
Collector Current, I [A]c Switching Time [ns]
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**Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs. Gate Resistance** **4** ©2009 Fairchild Semiconductor Corporation FGH40N60SF Rev.1.5 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [469 x 616] intentionally omitted <==** **----- Start of picture text -----**
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
5500 500
Common Emitter Common Emitter
VCC = 400V, VGE = 15V VGE = 15V, RG = 10 Ω
IC = 40A TC = 25oC
1000 TC = 25 o C TC = 125oC
TC = 125oC tr
td(off) 100
100
t
tf d(on)
10 10
0 10 20 30 40 50 20 40 60 80
Gate Resistance, RG [ Ω ] Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate Resistance
Collector Current
500 10
Common Emitter Common Emitter
V GE = 15V, R G = 10 Ω V CC = 400V, V GE = 15V
TC = 25 o C I C = 40A
T C = 125oC td(off) TT C C = 25 = 125oC oC Eon
100
tf 1
Eoff
10 0.30.2
20 40 60 80 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG [ Ω ]
Figure 17. Switching Loss vs. Collector Current Figure 18. Load Current vs. Frequency
30
—— 140 ns
Common Emitter
10 V TTCC GE = 25 = 125 = 15V, R oC oC G = 10 Ω E on ge420 | ||||| load Current
te : peak of square wave
1 Ey Eoff |@ eo} —— tN
Duty cycle: Ca Ef eee
0.1
20 30 40 50 60 70 80 1 10 100 1000
Collector Current, IC [A] Frequency [kHz]
Switching Time [ns] Switching Time [ns]
Switching Time [ns] Switching Loss [mJ]
Switching Loss [mJ]
**----- End of picture text -----**
**5** ©2009 Fairchild Semiconductor Corporation FGH40N60SF Rev.1.5 www.fairchildsemi.com ## **Typical Performance Characteristics** **Figure 19. Turn off Switching SOA Characteristics** **==> picture [191 x 170] intentionally omitted <==** **----- Start of picture text -----**
200
100
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
[A]
C
Collector Current, I
**----- End of picture text -----**
**Figure 20. Transient Thermal Impedance of IGBT** **==> picture [301 x 143] intentionally omitted <==** **----- Start of picture text -----**
1
a
0.5
0.1 0.2
0.1
0.05 BP
0.02
0.01 0.01 ee pees]
single pulse
Duty Factor, D = t1/t2
[Peak T][j][ = Pdm x Zthjc + T] C
1E-3 | os
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]
Thermal Response [Zthjc]
**----- End of picture text -----**
**6** ©2009 Fairchild Semiconductor Corporation FGH40N60SF Rev.1.5 www.fairchildsemi.com **==> picture [571 x 759] intentionally omitted <==** **----- Start of picture text -----**
[15.87] [E] [4.82] 4.58 [E] B
15.37
A
4.13 12.81 E
3.53 6.85 3.65
[E]
6.61 3.51
0.254 [M] B A [M]
[5.58] [E]
5.34 [1.35]
5.20 0.51
4.96
[20.82] 20.32 [E] 13.08 MIN
1 2 3 3
1
[1.87]
[3.93] [E] 1.53 [ (2X) ]
3.69 [16.25] [E]
15.75
1.60
[2.77]
2.43
[0.71]
5.56 0.51
[1.35] [2.66]
1.17 2.29
0.254 [M] B A [M]
11.12
NOTES: UNLESS OTHERWISE SPECIFIED.
A. PACKAGE REFERENCE: JEDEC TO-247,
ISSUE E, VARIATION AB, DATED JUNE, 2004.
B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DRAWING CONFORMS TO ASME Y14.5 - 1994
E DOES NOT COMPLY JEDEC STANDARD VALUE
F. DRAWING FILENAME: MKT-TO247A03_REV04
**----- End of picture text -----**
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