# IGBT, 80 A, 2.9 V, 290 W, 600 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3615767/)

**URL**: https://novapart.co/products/FGH40N60SFDTU-F085/igbt-80-a-29-v-290-w-600-to-247-3-pins
**SKU**: FGH40N60SFDTU-F085
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.9300
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 290W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3615767/)

**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** 

## IGBT - Field Stop 600 V, 40 A 

## FGH40N60SFDTU, FGH40N60SFDTU-F085 

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## **Description** 

Using Novel Field Stop IGBT Technology, **onsemi** ’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. 

## **Features** 

- High Current Capability 

- Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A 

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E<br>C<br>G<br>COLLECTOR<br>(FLANGE)<br>TO−247−3LD<br>CASE 340CK<br>**----- End of picture text -----**<br>


- High Input Impedance 

- Fast Switching 

- Qualified to Automotive Requirements of AEC−Q101 (FGH40N60SFDTU−F085) 

## **MARKING DIAGRAM** 

- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

- Automotive Chargers, Converters, High Voltage Auxiliaries 

- Inverters, PFC, UPS 

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$Y&Z&3&K $Y&Z&3&K<br>FGH40N60 FGH40N60<br>SFD SFDTU<br>Li<br>Industrial Automotive<br>$Y =  onsemi  Logo<br>&Z = Assembly Plant Code<br>&3 = Numeric Date Code<br>&K = Lot Code<br>FGH40N60SFD,<br>FGH40N60SFDTU = Specific Device Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **FGH40N60SFDTU−F085/D** 

**1** 

 Semiconductor Components Industries, LLC, 2015 **September, 2024 − Rev. 4** 

**ABSOLUTE MAXIMUM RATINGS** 

## **FGH40N60SFDTU, FGH40N60SFDTU−F085** 

|**Description**<br>**Symbol**<br>**Ratings**<br>**Unit**<br>~~a~~|
|---|
|Collector to Emitter Voltage<br>VCES<br>600<br>V<br>Gate to Emitter Voltage<br>VGES<br>20<br>V<br>Transient Gate−to−Emitter Voltage<br>30<br>V<br>~~pe~~<br>~~— =~~<br>~~a~~|
|Collector Current<br>TC= 25C<br>IC<br>80<br>A<br>TC= 100C<br>40<br>A<br>Pulsed Collector Current<br>TC= 25C<br>ICM(Note 1)<br>120<br>A<br>Maximum Power Dissipation<br>TC= 25C<br>PD<br>290<br>W<br>TC= 100C<br>116<br>W<br>Operating Junction Temperature<br>TJ<br>−55 to +150<br>C<br>Storage Temperature Range<br>Tstg<br>−55 to +150<br>C<br>~~se~~<br>~~pT~~<br>~~a~~<br>~~eG~~<br>~~es~~<br>~~ee~~<br>~~|~~<br>~~a~~<br>~~a~~<br>~~a~~|
|Maximum Lead Temperature for Soldering, 1/8from Case for 5 Seconds<br>TL<br>300<br>C<br>~~DO~~|
|Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality|
|should not be assumed, damage may occur and reliability may be affected.|
|1. Repetitive rating: Pulse width limited by max. junction temperature.|
|**THERMAL CHARACTERISTICS**|
|**Parameter**<br>**Symbol**<br>**Value**<br>**Unit**<br>~~a~~|
|Thermal Resistance, Junction−to−Case<br>R JC(IGBT)<br>0.43<br>C/W<br>~~a~~|
|Thermal Resistance, Junction−to−Case<br>R JC(Diode)<br>1.45<br>C/W<br>~~a~~|
|Thermal Resistance, Junction−to−Ambient<br>R JA<br>40<br>C/W<br>~~i~~|
|**PACKAGE MARKING AND ORDERING INFORMATION**|
|**Part Number**<br>**Top Mark**<br>**Package**<br>**Package Method**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**|
|FGH40N60SFDTU<br>FGH40N60SFD<br>TO−247<br>Tube<br>−<br>−<br>30|
|FGH40N60SFDTU−F085*<br>FGH40N60SFDTU<br>TO−247<br>Tube<br>−<br>−<br>30|
|*Qualified to Automotive Requirements of AEC−Q101|
|**ELECTRICAL CHARACTERISTICS OF THE IGBT**(TC= 25C unless otherwise noted)|
|**Parameter**<br>**Symbol**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~Po~~|
|Collector to Emitter Breakdown Voltage<br>BVCES<br>VGE= 0 V, IC= 250 A<br>600<br>−<br>−<br>V<br>~~Ge GG~~|
|Temperature Coefficient of Breakdown<br>Voltage<br>BVCES/ TJ<br>VGE= 0 V, IC= 250 A<br>−<br>0.6<br>−<br>V/C<br>~~a~~|
|Collector Cut−Off Current<br>ICES<br>VCE= VCES, VGE= 0 V<br>−<br>−<br>250<br>A<br>~~pt~~|
|G−E Leakage Current<br>IGES<br>VGE= VGES, VCE= 0 V<br>−<br>−<br>400<br>nA<br>**ON CHARACTERISTICs**<br>~~es~~<br>~~GO~~|
|G−E Threshold Voltage<br>VGE(th)<br>IC= 250 A, VCE= VGE<br>4.0<br>4.7<br>6.5<br>V<br>Collector to Emitter Saturation Voltage<br>VCE(sat)<br>IC= 40 A, VGE= 15 V<br>−<br>2.3<br>2.9<br>V<br>IC= 40 A, VGE= 15 V, TC= 125C<br>−<br>2.5<br>−<br>V<br>~~a~~<br>~~|—~~|
|**DYNAMIC CHARACTERISTICS**|
|Input Capacitance<br>Cies<br>VCE= 30 V, VGE= 0 V, f = 1 MHz<br>−<br>1920<br>−<br>pF|
|Output Capacitance<br>Coes<br>−<br>190<br>−<br>pF|
|Reverse Transfer Capacitance<br>Cres<br>−<br>65<br>−<br>pF|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Repetitive rating: Pulse width limited by max. junction temperature. 

*Qualified to Automotive Requirements of AEC−Q101 

**www.onsemi.com** 

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**2** 

## **FGH40N60SFDTU, FGH40N60SFDTU−F085** 

**ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25C unless otherwise noted) (continued) 

|**SWITCHING CHARACTERISTICS**<br>~~ee~~|~~ee~~<br>||~~a~~||||
|---|---|---|---|---|---|---|
|Turn−On Delay Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|td(on)<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|VCC= 400 V, IC= 40 A,<br>RG= 10<br>VGE= 15 V,<br>Inductive Load, TC= 25C|−<br>~~a~~<br>~~a~~|21|−|ns|
|Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|tr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>||−<br>~~a~~<br>~~a~~<br>~~a~~|35|−|ns|
|Turn−Off Delay Time<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|td(off)<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>||−<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|138|−|ns|
|Fall Time<br> <br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|tf<br> ~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>||−<br>~~a~~<br>~~a~~<br>~~a~~<br>~~ee~~|18<br>~~ee~~|54<br>~~ee~~|ns<br>~~ee~~|
|Turn−On Switching Loss<br> <br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Eon<br> ~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~**ee**~~||−<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~ee~~|1.23<br>~~ee~~<br>~~ee~~|−<br>~~ee~~<br>~~ee~~|mJ<br>~~ee~~<br>~~ee~~|
|Turn−Off Switching Loss<br> <br>~~ee ~~<br>~~ee~~<br>~~ee~~|Eoff<br> ~~ee~~<br> ~~ee~~<br>~~**ee**~~||−<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~|0.38<br>~~ee~~<br>~~ee~~<br>~~a~~|−<br>~~ee~~<br>~~ee~~<br>~~a~~|mJ<br>~~ee~~<br>~~ee~~<br>~~a~~|
|Total Switching Loss<br> <br>~~ee ~~<br>~~ee~~<br>~~ee~~|Ets<br> ~~ee~~<br> ~~**ee**~~<br>~~ee~~<br>||−<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~a~~|1.61<br>~~ee~~<br>~~ee~~<br>~~a~~|−<br>~~ee~~<br>~~ee~~<br>~~a~~|mJ<br>~~ee~~<br>~~ee~~<br>~~a~~|
|Turn−On Delay Time<br> <br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|td(on)<br> ~~**ee**~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|VCC= 400 V, IC= 40 A,<br>RG= 10<br>VGE= 15 V,<br>Inductive Load, TC= 125C<br>||−<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~a~~|21<br>~~ee~~<br>~~a~~|−<br>~~ee~~<br>~~a~~|ns<br>~~ee~~<br>~~a~~|
|Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|tr<br>~~ee~~<br>~~ee~~<br>~~ee~~||−<br>~~a~~<br>~~a~~<br>~~a~~|39|−|ns|
|Turn−Off Delay Time<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|td(off)<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~||−<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|144|−|ns|
|Fall Time<br> <br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|tf<br> ~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>||−<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|48|−|ns|
|Turn−On Switching Loss<br> <br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Eon<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>||−<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|1.58|−|mJ|
|Turn−Off Switching Loss<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Eoff<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>||−<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|0.58|−|mJ|
|Total Switching Loss<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Ets<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>||−<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|2.16|−|mJ|
|Total Gate Charge<br> <br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Qg<br> ~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~**ee**~~|VCE= 400 V, IC= 40 A, VGE= 15 V|−<br>~~a~~<br>~~a~~<br>~~a~~<br>~~**a**~~|121|−|nC|
|Gate to Emitter Charge<br> <br>~~ee ~~<br>~~ee~~<br>~~ee~~|Qge<br> ~~ee~~<br> ~~ee~~<br>~~**ee**~~||−<br>~~a~~<br>~~a~~<br>~~**a**~~|16<br>~~a~~|−<br>~~ee~~|nC|
|Gate to Collector Charge<br> <br>~~ee ~~<br>~~ee~~|Qgc<br> ~~ee~~<br> ~~**ee**~~||−<br>~~a~~<br>~~**a**~~|68<br>~~a~~|−<br>~~ee~~|nC|



|**Parameter**<br>~~ss~~|**Symbol**<br>~~ss~~|**Test Conditions**<br>~~ss~~<br>~~Ge~~|**Test Conditions**<br>~~ss~~<br>~~Ge~~|**Min**<br>~~ss~~|**Typ**<br>~~ss~~|**Max**<br>~~ss~~|**Unit**<br>~~ss~~|
|---|---|---|---|---|---|---|---|
|Diode Forward Voltage<br>~~rs~~<br>~~a~~|VFM<br>~~rs~~<br>~~a~~|IF= 20 A<br>~~Ge~~<br>~~rs~~|TC= 25C<br>~~rs~~|−<br>~~rs~~<br>~~e~~~~**e**~~|1.80<br>~~rs~~<br>~~ee~~|2.6<br>~~rs~~<br>~~ee~~|V<br>~~rs~~|
||||TC= 125C<br>~~rs~~<br>~~rr~~|−<br>~~rs~~<br>~~rr~~<br>~~e~~~~**e**~~|1.70<br>~~rs~~<br>~~rr~~<br>~~ee~~|−<br>~~rs~~<br>~~rr~~<br>~~ee~~||
|Diode Reverse Recovery Time<br>~~a~~<br>~~TT~~|trr<br>~~a~~<br>~~TT~~|IF= 20 A, diF/dt = 200 A/ s|TC= 25C|−<br>~~e~~~~**e**~~<br>~~ee~~|68<br>~~ee~~<br>~~ee~~|−<br>~~ee~~<br>~~eee~~|ns|
||||TC= 125C<br>~~r~~|−<br>~~e~~~~**e** ~~<br>~~r~~<br>~~ee~~|240<br> ~~ee ~~<br>~~ee~~|−<br> ~~ee~~<br>~~eee~~||
|Diode Reverse Recovery Charge<br>~~TT~~|Qrr<br>~~TT~~||TC= 25C|−<br>~~ee~~<br>~~ee~~|160<br>~~ee~~<br>~~ee~~|−<br>~~eee~~|nC|
||||TC= 125C<br>~~rs~~|−<br>~~ee ~~<br>~~rs~~<br>~~ee~~|840<br> ~~ee ~~<br>~~rs~~<br>~~ee~~|−<br> ~~eee~~<br>~~rs~~||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**3** 

**FGH40N60SFDTU, FGH40N60SFDTU−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

**Figure 1. Typical Output Characteristics** 

**Figure 2. Typical Output Characteristics** 

**Figure 3. Typical Saturation Voltage Characteristics** 

**Figure 4. Transfer Characteristics** 

**Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level** 

**Figure 6. Saturation Voltage vs. VGE** 

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**4** 

**FGH40N60SFDTU, FGH40N60SFDTU−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

**Figure 7. Saturation Voltage vs. VGE** 

**Figure 8. Saturation Voltage vs. VGE** 

**Figure 9. Capacitance Characteristics** 

**Figure 10. Gate Charge Characteristics** 

**Figure 11. SOA Characteristics** 

**Figure 12. Turn−on Characteristics vs. Gate Resistance** 

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**5** 

**FGH40N60SFDTU, FGH40N60SFDTU−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

**Figure 13. Turn−Off Characteristics vs. Gate Resistance** 

**Figure 14. Turn−On Characteristics vs. Collector Current** 

**Figure 15. Turn−Off Characteristics vs. Collector Current** 

**Figure 16. Switching Loss vs. Gate Resistance** 

**Figure 17. Switching Loss vs. Collector Current** 

**Figure 18. Turn−Off Switching SOA Characteristics** 

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**6** 

**FGH40N60SFDTU, FGH40N60SFDTU−F085** 

**TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

**Figure 19. Forward Characteristics** 

**Figure 20. Reverse Current** 

**Figure 21. Stored Charge** 

**Figure 22. Reverse Recovery Time** 

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PDM<br>t1<br>i J t LU 2 L<br>D ae = t1/t2<br>**----- End of picture text -----**<br>


**Figure 23. Transient Thermal Impedance of IGBT** 

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**7** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **TO−247−3LD SHORT LEAD** 

CASE 340CK ISSUE A 

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**----- Start of picture text -----**<br>
DATE 31 JAN 2019<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
  A P1<br>A   E P   D2<br>  A2<br>  Q<br>  E2<br>S<br>  D1<br>  D B   E1<br>2<br>1 2 3<br>  L1<br>  A1<br>  b4   L<br>  c<br>  (3X) b<br>  (2X) b2 0.25 [M] B A [M]<br>MILLIMETERS<br>(2X)  e DIM<br>MIN NOM MAX<br>**----- End of picture text -----**<br>


||DIM|MILLIMETERS<br>MIN<br>NOM<br>MAX|MILLIMETERS<br>MIN<br>NOM<br>MAX|MILLIMETERS<br>MIN<br>NOM<br>MAX|
|---|---|---|---|---|
||A|4.58|4.70|4.82|
||A1|2.20|2.40|2.60|
||A2|1.40|1.50|1.60|
||b|1.17|1.26|1.35|
||b2|1.53|1.65|1.77|
||b4|2.42|2.54|2.66|
||c<br>D<br>D1|0.51<br>20.32 <br>13.08|0.61<br> 20.57 <br>~|0.71<br> 20.82<br>~|
||D2|0.51|0.93|1.35|
||E|15.37|15.62|15.87|
||E1|12.81|~|~|
||E2|4.96|5.08|5.20|
||e<br>L|~<br>15.75|5.56<br> 16.00|~<br> 16.25|
||L1<br>P<br>P1|3.69<br>3.51<br>6.60|3.81<br>3.58<br>6.80|3.93<br>3.65<br>7.00|
||Q<br>S|5.34<br>5.34|5.46<br>5.46|5.58<br>5.58|



**==> picture [299 x 69] intentionally omitted <==**

## **GENERIC** 

## **MARKING DIAGRAM*** 

AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code 

*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **DOCUMENT NUMBER: 98AON13851G** 

**DESCRIPTION: TO−247−3LD SHORT LEAD PAGE 1 OF 1** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2016 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales 

**==> picture [232 x 43] intentionally omitted <==**

 



## Links

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---

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