# IGBT, 64 A, 3.15 V, 417 W, 1.2 kV, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:3368685/) **URL**: https://novapart.co/products/FGH40N120ANTU/igbt-64-a-315-v-417-w-12-kv-to-247-3-pins **SKU**: FGH40N120ANTU **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €5.8000 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Product Range | AN | | Power Dissipation | 417W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 150°C | | Continuous Collector Current | 64A | | Collector Emitter Voltage Max | 1.2kV | | Collector Emitter Saturation Voltage | 3.15V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3368685/) ## IGBT - NPT **1200 V, 40 A** ## FGH40N120AN ## **Description** Employing NPT technology, ON Semiconductor’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). ## **Features** - High Speed Switching - Low Saturation Voltage: VCE(sat) = 2.6 V @ IC = 40 A - High Input Impedance - This Device is Pb−Free and is RoHS Compliant ## **Applications** - Induction Heating, UPC, AC & DC Motor Controls and General Purpose Inverters ## **www.onsemi.com** **==> picture [111 x 180] intentionally omitted <==** **----- Start of picture text -----**
C
G
E
E
C
G
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
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## **MARKING DIAGRAM** $Y&Z&3&K FGH40N120 AN $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40N120AN = Specific Device Code ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2006 **February, 2020 − Rev. 1** **FGH40N120AN/D** **FGH40N120AN** **ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) |**ABSOLUTE MAXIMUM RATINGS**(TC= 25°C unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25°C unless otherwise noted)|||| |---|---|---|---|---| |**Parameter**||**Symbol**|**FGH40N120AN**|**Unit**| |Collector to Emitter Voltage||VCES|1200|V| |Gate to Emitter Voltage||VGES|±25|V| |Collector Current|TC= 25°C|IC|64|A| |Collector Current|TC= 100°C||40|A| |Pulsed Collector Current||ICM(Note 1)|160|A| |Maximum Power Dissipation|TC= 25°C|PD|417|W| |Maximum Power Dissipation|TC= 100°C||167|W| |Short Circuit Withstand Time, VCE= 600 V, VGE= 15 V, TC= 125°C||SCWT|10|�s| |Operating Junction Temperature||TJ|−55 to +150|°C| |Storage Temperature Range||TSTG|−55 to +150|°C| |Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds||TL|300|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by max. junction temperature. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Typ**|**Max**|**Unit**| |Thermal Resistance, Junction to Case|R�JC(IGBT)|−|0.3|°C/W| |Thermal Resistance, Junction to Ambient|R�JA|−|40|°C/W| ## **PACKAGE MARKING AND ORDERING INFORMATION** |**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---| |FGH40N120AN|FGH40N120AN|TO−247|−|−|30| ## **ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) |**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**OFF CHARACTERISTICS**||||||| |Collector to Emitter Breakdown Voltage|BVCES|VGE= 0 V, IC= 1 mA|1200|−|−|V| |Temperature Coefficient of Breakdown
Voltage|�BVCES/�TJ|VGE= 0 V, IC= 1 mA|−|0.6|−|V/°C| |Collector Cut−Off Current|ICES|VCE= VCES, VGE= 0 V|−|−|1|mA| |G−E Leakage Current|IGES|VGE= VGES, VCE= 0 V|−|−|±250|nA| |**ON CHARACTERISTICs**||||||| |G−E Threshold Voltage|VGE(th)|IC= 250�A, VCE= VGE|3.5|5.5|7.5|V| |Collector to Emitter Saturation Voltage|VCE(sat)|IC= 40 A, VGE= 15 V|−|2.6|3.2|V| |||IC= 40 A, VGE= 15 V, TC= 125°C|−|2.9|−|V| |||IC= 64 A, VGE= 15 V|−|3.15|−|V| **www.onsemi.com** **2** ## **FGH40N120AN** **ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) (continued) |**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**DYNAMIC CHARACTERISTICS**||||||| |Input Capacitance|Cies|VCE= 30 V, VGE= 0 V, f = 1 MHz|−|3200|−|pF| |Output Capacitance|Coes||−|370|−|pF| |Reverse Transfer Capacitance|Cres||−|125|−|pF| |**SWITCHING CHARACTERISTICS**||||||| |Turn−On Delay Time|td(on)|VCC= 600 V, IC= 40 A,
RG= 5��VGE= 15 V,
Inductive Load, TC= 25°C|−|15|−|ns| |Rise Time|tr||−|20|−|ns| |Turn−Off Delay Time|td(off)||−|110|−|ns| |Fall Time|tf||−|40|80|ns| |Turn−On Switching Loss|Eon||−|2.3|3.45|mJ| |Turn−Off Switching Loss|Eoff||−|1.1|1.65|mJ| |Total Switching Loss|Ets|||3.4|5.1|mJ| |Turn−On Delay Time|td(on)|VCC= 600 V, IC= 40 A,
RG= 5��VGE= 15 V,
Inductive Load, TC= 125°C|−|20|−|ns| |Rise Time|tr||−|25|−|ns| |Turn−Off Delay Time|td(off)||−|120|−|ns| |Fall Time|tf||−|45|−|ns| |Turn−On Switching Loss|Eon||−|2.5|−|mJ| |Turn−Off Switching Loss|Eoff||−|1.8|−|mJ| |Total Switching Loss|Ets||−|4.3|−|mJ| |Total Gate Charge|Qg|VCE= 600 V, IC= 40 A, VGE= 15 V|−|220|−|nC| |Gate to Emitter Charge|Qge||−|25|−|nC| |Gate to Collector Charge|Qgc||−|130|−|nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **3** **FGH40N120AN** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [200 x 164] intentionally omitted <==** **----- Start of picture text -----**
300
TC = 25 ° C 20 V 17 V
250
15 V
200 12 V
150
100 VGE = 10 V
50
0
0 2 4 6 8 10
Collector−Emitter Voltage, VCE [V]
[A]
C
Collector Current, I
**----- End of picture text -----**
**Figure 1. Typical Output Characteristics** **==> picture [192 x 163] intentionally omitted <==** **----- Start of picture text -----**
160
Common Emitter
V GE = 15 V
120 T T CC = 25 = 125 ° C ° C
80
40
0
0 2 4 6
Collector−Emitter Voltage, VCE [V]
[A]
C
Collector Current, I
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**Figure 2. Typical Saturation Voltage Characteristics** **==> picture [196 x 165] intentionally omitted <==** **----- Start of picture text -----**
5
Common Emitter
V GE = 15 V
4
80 A
3
40 A
2
IC = 20 A
1
25 50 75 100 125
Case Temperature, TC [ ° C]
[V]
CE
Collector−Emitter Voltage, V
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**Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level** **==> picture [195 x 164] intentionally omitted <==** **----- Start of picture text -----**
20
Common Emitter
TC = 25 ° C
16
12
8
80 A
4
40 A
IC = 20 A
0
0 4 8 12 16 20
Gate−Emitter Voltage, VGE [V]
[V]
CE
Collector−Emitter Voltage, V
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**Figure 5. Saturation Voltage vs. VGE** **==> picture [203 x 367] intentionally omitted <==** **----- Start of picture text -----**
70
VCC = 600 V
Load Current: Peak of Square Wave
56
42
28
14 Duty Cycle: 50%
T C = 100 ° C
Power Dissipation = 100 W
0
0.1 1 10 100 1000
Frequency [kHz]
Figure 4. Load Current vs. Frequency
20
Common Emitter
TC = 125 ° C
16
12
8
80 A
4
40 A
IC = 20 A
0
0 4 8 12 16 20
Gate−Emitter Voltage, VGE [V]
Load Current, [A]
[V]
CE
Collector−Emitter Voltage, V
**----- End of picture text -----**
**Figure 6. Saturation Voltage vs VGE** **www.onsemi.com** **4** **FGH40N120AN** ## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) **==> picture [201 x 599] intentionally omitted <==** **----- Start of picture text -----**
6000
Common Emitter
5000 VTC GE = 25= 0 V, f ° C = 1 MHz
Ciss
4000
3000
2000
Coss
1000
Crss
0
1 10
Collector−Emitter Voltage, VCE [V]
Figure 7. Capacitance Characteristics
1000
td(off)
Common Emitter
VCC = 600 V, VGE = ± 15 V
100 I C = 40 A
TC = 25 ° C
tf TC = 125 ° C
10
0 10 20 30 40 50 60 70
Gate Resistance, RG [ � ]
Figure 9. Turn−Off Characteristics
vs. Gate Resistance
Common Emitter
VGE = ± 15 V, RG = 5 �
100 °
TTCC = 25 = 125C ° C tr
td(on)
10
20 30 40 50 60 70 80
Collector Current, IC [A]
Figure 11. Turn−On Characteristics
vs. Collector Current
Capacitance [pF]
Switching Time [ns]
Switching Time [ns]
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**==> picture [196 x 570] intentionally omitted <==** **----- Start of picture text -----**
100
t r
td(on)
Common Emitter
V CC = 600 V, V GE = ± 15 V
IC = 40 A
TC = 25 ° C
TC = 125 ° C
10
0 10 20 30 40 50 60 70
Gate Resistance, RG [ � ]
Figure 8. Turn−On Characteristic vs. Gate
Resistance
Common Emitter
VCC = 600 V, VGE = ± 15 V
IC = 40 A
10 TC = 25 ° C
TC = 125 ° C
Eon
Eoff
1
1 10 20 30 40 50 60 70
Gate Resistance, RG [ � ]
Figure 10. Switching Loss vs. Gate
Resistance
Common Emitter
V GE = ± 15 V, R G = 5 �
TC = 25 ° C
TC = 125 ° C t d(off)
100
t f
20 30 40 50 60 70 80
Collector Current, IC [A]
Switching Time [ns]
Switching Loss [mJ]
Switching Time [ns]
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**Figure 8. Turn−On Characteristic vs. Gate Resistance** **Figure 12. Turn−Off Characteristics vs. Collector Current** **www.onsemi.com** **5** **FGH40N120AN** ## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) **==> picture [196 x 162] intentionally omitted <==** **----- Start of picture text -----**
16
Common Emitter
14 RL = 15 L = 15 = 15 �
12 T C = 25 ° C 600 V
VCC = 200 VCC = 200 V = 200 V
10
400 V
8
6
4
2
0
0 50 100 150 200 250
Gate Charge, Qg [nC]g [nC][nC]
[V]
GE
Gate−Emitter Voltage, V
**----- End of picture text -----**
**==> picture [450 x 361] intentionally omitted <==** **----- Start of picture text -----**
16
Common Emitter Common Emitter
VGE = ± 15 V, RG = 5 � 14 RL = 15 L = 15 = 15 �
10 TTCC = 125= 25 ° C ° C Eon 12 T C = 25 ° C 600 V
VCC = 200 VCC = 200 V = 200 V
10
400 V
Eoff 8
1
6
4
2
0.1 0
20 30 40 50 60 70 80 0 50 100 150 200
Collector Current, IC [A] Gate Charge, Qg [nC]g [nC][nC]
Figure 13. Switching Loss vs. Collector Figure 14. Gate Charge Characteristics
Current
500
IC MAX(Pulse) 10 � s
100
100
100 � s
10
1 ms
IC MAX(Continuous)
10 ms
1 DC Operation 10
*Notes:
0.1 1. TC = 25 ° C
2. TJ = 150 ° C Safe Operating Area
3. Single Pulse VGE = 15 V, TC = 125 ° C
0.01 1
1 10 100 1000 2000 1 10 100 1000
Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [A]
[V]
Switching Loss [mJ] GE
Gate−Emitter Voltage, V
Collector Current, I [A]C Collector Current, I [A]C
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**Figure 14. Gate Charge Characteristics** **Figure 16. Turn−Off SOA** **Figure 15. SOA Characteristics** **==> picture [304 x 151] intentionally omitted <==** **----- Start of picture text -----**
1
0.5
0.1
0.2
0.1
0.05
0.01 0.02 PDM
t1
0.01 t2
Single Pulse Duty Factor, D = t1/t2
Peak Tj = Pdm x Z � jc + TC
1E−3
1E−5 1E−4 1E−3 0.01 0.1 1 10
Rectangular Pulse Duration [sec]
jc]
�
Thermal Response [Z
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**Figure 17. Transient Thermal Impedance of IGBT** **www.onsemi.com** **6** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [116 x 29] intentionally omitted <==** **----- Start of picture text -----**
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
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DATE 31 JAN 2019 A P1 | A E A2 @ P 0) D2 ~~1 + _~~ Q E2 ) ! S C ~~R OG )~~ D1 D B E1 2 1 2 3 ~~|~~ Oo | ~~N77~~ L1 A1 b4 L c (3X) b (2X) b2 0.25[M] B A[M] MILLIMETERS (2X) e DIM MIN NOM MAX A ~~eee~~ A 4.58 4.70 4.82 NOTES: UNLESS OTHERWISE SPECIFIED. ~~|~~ A1 2.20 2.40 2.60 A. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD ~~a~~ A2 1.40 ~~ee~~ 1.50 ~~ee~~ 1.60 ~~ee~~ b 1.17 1.26 1.35 ©. FLASH,DRAWING ANDCONFORMS TIE BAR EXTRUSIONS.TO ASME Y14.5 - 2009. ~~eeee~~ b2 1.53 ~~ee~~ 1.65 ~~ee~~ 1.77 D. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BYL1. ~~[—~~ b4 ~~[|~~ 2.42 2.54 ~~ss~~ 2.66 c 0.51 0.61 0.71 E. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. ~~ee ee ee eee~~ **GENERIC** D 20.32 20.57 20.82 **MARKING DIAGRAM*** ~~ee ee ee ee~~ D1 13.08 ~ ~ ~~ee ee eee eee~~ AYWWZZ ~~ee~~ D2 ~~ee~~ 0.51 0.93 1.35 XXXXXXX ~~a~~ E ~~ee~~ 15.37 15.62 15.87 ~~eee~~ XXXXXXX ~~a~~ E1 ~~ee~~ 12.81 ~ ~~eee~~ ~ ~~a~~ E2 ~~ee~~ 4.96 5.08 ~~eee~~ 5.20 XXXX = Specific Device Code ~~a~~ e ~~ee~~ ~ 5.56 ~~eee~~ ~ A = Assembly Location Y = Year ~~ee~~ L ~~ee~~ 15.75 16.00 ~~**eee**~~ 16.25 WW = Work Week L1 3.69 3.81 3.93 ZZ = Assembly Lot Code P 3.51 3.58 3.65 *This information is generic. Please refer to ~~po |~~ ~~**|**~~ P1 6.60 6.80 7.00 device data sheet for actual part marking. ~~fo |~~ ~~**|**~~ Pb−Free indicator, “G” or microdot “ . ”, may ~~a~~ Q ~~ee~~ 5.34 5.46 5.58 or may not be present. Some products may not follow the Generic Marking. ~~a~~ S ~~ee~~ 5.34 5.46 eee 5.58 ~~ee~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13851G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ## **DOCUMENT NUMBER: 98AON13851G** **DESCRIPTION: TO−247−3LD SHORT LEAD** **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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