# IGBT, 41 A, 1.25 V, 150 W, 400 V, TO-252 (DPAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3615756/)

**URL**: https://novapart.co/products/FGD3040G2-F085V/igbt-41-a-125-v-150-w-400-to-252-dpak-3-pins
**SKU**: FGD3040G2-F085V
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.4390
**Stock**: 10+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 150W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 41A |
| Collector Emitter Voltage Max | 400V |
| Collector Emitter Saturation Voltage | 1.25V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3615756/)

**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ 

## ECOSPARK 2 Ignition IGBT 

## **300 mJ, 400 V, N-Channel Ignition IGBT** 

## **-** FGD3040G2 F085V 

## **Features** 

- SCIS Energy = 300 mJ at TJ = 25 °C 

- Logic Level Gate Drive 

- AEC-Q101 Qualified and PPAP Capable 

- RoHS Compliant 

## **Applications** 

- Automotive Ignition Coil Driver Circuits 

- Coil on Plug Application 

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COLLECTOR<br>**----- End of picture text -----**<br>


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||<br>R1 c<br>GATE<br>|<br>R2<br>EMITTER<br>COLLECTOR<br>(FLANGE)<br>G ><br>E<br>DPAK (SINGLE GAUGE)<br>CASE 369C<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) 

|**MAXIMUM RATINGS**|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise stated)|C unless otherwise stated)||
|---|---|---|---|
|**Symbol**<br>~~a~~<br>~~ne~~|**Parameter**|**Value**|**Unit-**<br>**s**|
|BVCER<br>~~a~~<br>~~ne~~|Collector to Emitter Breakdown<br>Voltage (IC= 1 mA)|400|V|
|BVECS<br>~~ne~~<br>~~a~~|Emitter to Collector Voltage − Reverse<br>Battery Condition (IC= 10 mA)|28|V|
|ESCIS25<br>~~a~~<br>~~ee~~|Self Clamping Inductive Switching<br>Energy (Note 1)|300|mJ|
|ESCIS150<br>~~ee~~|Self Clamping Inductive Switching<br>Energy (Note 2)|170|mJ|
|IC25<br>~~ee~~<br>~~a~~|Collector Current Continuous<br>at VGE = 5.0 V, TC= 25°C|41|A|
|IC110<br>~~a~~<br>~~_—___~~|Collector Current Continuous<br>at VGE = 5.0 V, TC= 110°C<br>~~_—___~~|25.6<br>~~Ge~~|A|
|VGEM<br>~~a~~<br>~~_—___~~|Gate to Emitter Voltage Continuous<br>~~_—___~~|±10<br>~~Ge~~|V|
|PD<br>~~_—___~~|Power Dissipation Total, TC= 25°C<br>~~_—___~~|150<br>~~Ge~~|W|
||Power Dissipation Derating, TC> 25°C<br>~~_—___~~|1<br>~~Ge~~|W/°C|
|TJ<br>~~_—___~~<br>~~a~~<br>~~ae~~<br>~~ee~~|Operating Junction and Storage<br>Temperature<br>~~_—___~~<br>~~ee~~|−55 to 175<br>~~Ge~~<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~|
|TSTG<br>~~ae~~<br>~~ee~~|Storage Junction Temperature Range<br>~~ee~~|−55 to 175<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~|
|TL<br>~~ae~~<br>~~ee~~<br>~~ee~~|Max. Lead Temperature for Soldering<br>(Package Body for 10 s)<br>~~ee~~<br>|300<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~|
|TPKG<br>~~ee~~<br>~~eePp~~|Max. Lead Temperature for Soldering<br>(Package Body for 10 s)<br>~~Ppae~~|260<br>~~ee~~|°C|
|ESD<br>~~eePp~~|HBM − Electrostatic Discharge Voltage<br>at 100 pF, 1500<br>~~Ppae~~|4|kV|
||CDM − Electrostatic Discharge Voltage<br>at 1<br>~~Ppae~~<br>~~ee~~|2<br>~~ee~~|kV<br>~~ee~~|



**MARKING DIAGRAM** AYWW FGD 3040G2 ~~c~~ i ~~)~~ A = Assembly Location Y = Year WW =  Work Week FGD3040G2 = Device Code 

## ~~ee~~ 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that is starting TJ = 25 ° C, L = 3 mHy, ISCIS = 14.2 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 

2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that is starting TJ = 150 ° C, L = 3 mHy, ISCIS =  10.8 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 

Publication Order Number: **FGD3040G2-F085V/D** 

**1** 

© Semiconductor Components Industries, LLC, 2019 **May, 2025 − Rev. 4** 

**FGD3040G2-F085V** 

## **THERMAL RESISTANCE RATINGS** 

|**Characteristic**<br>**Symbol**<br>**Max**<br>**Units**|
|---|
|Junction-to-Case − Steady State (Drain)<br>R JC<br>1<br>°C/W<br>~~a~~|
|**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise specified)|
|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ.**<br>**Max.**<br>**Units**<br>**OFF CHARACTERISTICS**<br>~~a~~<br>~~GD~~|
|BVCER<br>Collector to Emitter Breakdown Voltage<br>ICE=  2 mA, VGE  = 0 V,<br>RGE=  1 k<br>TJ= −40 to 150°C<br>370<br>400<br>430<br>V<br>BVCES<br>Collector to Emitter Breakdown Voltage<br>ICE= 10 mA, VGE  = 0 V,<br>RGE= 0, TJ= −40 to 150°C<br>390<br>420<br>450<br>V<br>BVECS<br>Emitter to Collector Breakdown Voltage<br>ICE= −20 mA, VGE  = 0 V,<br>TJ= 25°C<br>28<br>−<br>−<br>V<br>BVGES<br>Gate to Emitter Breakdown Voltage<br>IGES=±2 mA<br>±12<br>±14<br>−<br>V<br>ICER<br>Collector to Emitter Leakage Current<br>VCE= 250 V<br>RGE= 1 k<br>TJ= 25°C<br>−<br>−<br>25<br>A<br>TJ= 150°C<br>−<br>−<br>1<br>mA<br>IECS<br>Emitter to Collector Leakage Current<br>VEC= 24 V<br>TJ= 25°C<br>−<br>−<br>1<br>mA<br>TJ= 150°C<br>−<br>−<br>40<br>R1<br>Series Gate Resistance<br>−<br>120<br>−<br>R2<br>Gate to Emitter Resistance<br>10K<br>−<br>30K<br>~~a~~<br>~~Lsa~~<br>~~a~~<br>~~eeGe~~<br>~~of~~<br>~~a~~<br>~~ee ~~~~**e**e e~~~~**e** ee~~<br>~~eee~~~~**e**~~<br>~~ee e~~<br>~~ee ee ee~~<br>~~aGe~~<br>~~=~~<br>~~a =~~|
|**ON CHARACTERISTICS**(Note 5)|
|VCE(SAT)<br>Collector to Emitter Saturation Voltage<br>ICE= 6 A, VGE  =  4 V, TJ= 25°C<br>−<br>1.15<br>1.25<br>V<br>VCE(SAT)<br>Collector to Emitter Saturation Voltage<br>ICE= 10 A, VGE  =  4.5 V, TJ= 150°C<br>−<br>1.35<br>1.50<br>V<br>~~a~~<br>~~eeQs~~<br>~~a a~~<br>~~Gs~~|
|VCE(SAT)<br>Collector to Emitter Saturation Voltage<br>ICE= 15 A, VGE  =  4.5 V, TJ= 150°C<br>−<br>1.68<br>1.85<br>V<br>ESCIS<br>Self Clamped Inductive Switching<br>L = 3.0 mHy, RG =  1 k<br>VGE = 5 V,<br>(Note 1)<br>−<br>−<br>300<br>mJ<br>~~a~~|
|**DYNAMIC CHARACTERISTICS**|
|QG(ON)<br>Gate Charge<br>ICE= 10 A, VCE  = 12 V, VGE= 5 V<br>−<br>21<br>−<br>nC|
|VGE(TH)<br>Gate to Emitter Threshold Voltage<br>ICE= 1 mA<br>TJ= 25°C<br>1.3<br>1.7<br>2.2<br>V|
|VCE= VGE<br>TJ= 150°C<br>0.75<br>1.2<br>1.8|
|VGEP<br>Gate to Emitter Plateau Voltage<br>VCE= 12 V, ICE  = 10 A<br>−<br>2.8<br>−<br>V|
|**SWITCHING CHARACTERISTICS**|
|td(ON)R<br>Current Turn-On Delay Time-Resistive<br>VCE= 14 V, RL  = 1<br>VGE= 5 V,<br>RG= 1 k<br>TJ= 25°C<br>−<br>0.9<br>4<br>s<br>trR<br>Current Rise Time-Resistive<br>−<br>1.9<br>7<br>td(OFF)L<br>Current Turn-Off Delay Time-Inductive<br>VCE= 300 V, L = 1 mH, VGE= 5 V,<br>RG= 1 k<br>ICE= 6.5 A, TJ= 25°C<br>−<br>4.8<br>15<br>tfL<br>Current Fall Time-Inductive<br>−<br>2.0<br>15<br>~~ee~~<br>~~===~~<br>~~ee ee ee~~<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~a~~|
|Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product|
|performance may not be indicated by the Electrical Characteristics if operated under different conditions.|



## **PACKAGE MARKING AND DEVICE ORDERING INFORMATION** 

|**Device Marking**|**Device**|**Package**|**Reel Diameter**|**Tape Width**|**Qty**†|
|---|---|---|---|---|---|
|FGD3040G2|FGD3040G2-F085V|DPAK (Pb-Free)|330 mm|16 mm|2500|



† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com 2** ~~—~~ 

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**FGD3040G2-F085V** 

## **TYPICAL CHARACTERISTICS** 

**Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp** 

**Figure 2. Self Clamped Inductive Switching Current vs. Inductance** 

**Figure 3. Collector to Emitter On-State Voltage vs. Junction Temperature** 

**Figure 4. Collector to Emitter On-State Voltage vs. Junction Temperature** 

**Figure 5. Collector to Emitter On-State Voltage vs. Collector Current** 

**Figure 6. Collector to Emitter On-State Voltage vs. Collector Current** 

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**FGD3040G2-F085V** 

## **TYPICAL CHARACTERISTICS** (continued) 

**Figure 7. Collector to Emitter On-State Voltage vs. Collector Current** 

**Figure 8. Transfer Characteristics** 

**Figure 9. DC Collector Current vs. Case Temperature** 

**Figure 10. Gate Charge** 

**Figure 11. Threshold Voltage vs. Junction Temperature** 

**Figure 12. Leakage Current vs. Junction Temperature** 

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**FGD3040G2-F085V** 

## **TYPICAL CHARACTERISTICS** (continued) 

**Figure 13. Switching Time vs. Junction Temperature** 

**Figure 14. Capacitance vs. Collector to Emitter Voltage** 

**Figure 15. Break down Voltage vs. Series Resistance** 

**Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case** 

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**FGD3040G2-F085V** 

## **TYPICAL CHARACTERISTICS** (continued) 

**Figure 17. Forward Safe Operating Area** 

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**FGD3040G2-F085V** 

## **TEST CIRCUIT AND WAVEFORMS** 

**Figure 18. Inductive Switching Test Circuit** 

**Figure 19. tON and tOFF Switching Test Circuit** 

**Figure 20. Energy Test Circuit** 

**Figure 21. Energy Waveforms** 

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**FGD3040G2-F085V** 

## **REVISION HISTORY** 

|**Revision**<br>~~—~~|**Description of Changes**|**Date**|
|---|---|---|
|4<br>~~—~~|Missing package pinout on Preview list|5/28/2025|



ECOSPARK is registered trademark of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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DPAK−3 6.10x6.54x2.28, 2.29P<br>CASE 369C<br>ISSUE K<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON10527D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: DPAK−3 6.10x6.54x2.28, 2.29P PAGE 1 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2011 

DATE 13 MAY 2026 

**DPAK−3 6.10x6.54x2.28, 2.29P** CASE 369C ISSUE K 

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GENERIC<br>MARKING DIAGRAM*<br>XXXXXXG AYWW<br>ALYWW XXX<br>XXXXXG<br>IC Discrete<br>XXXXXX = Device Code<br>A = Assembly Location<br>L = Wafer Lot<br>Y =  Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

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STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE<br>2. COLLECTOR 2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. EMITTER 3. SOURCE 3. ANODE 3. GATE 3. CATHODE<br>4. COLLECTOR 4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:<br>PIN 1. MT1 PIN 1. GATE PIN 1. N/C PIN 1. ANODE PIN 1. CATHODE<br>2. MT2 2. COLLECTOR 2. CATHODE 2. CATHODE 2. ANODE<br>3. GATE 3. EMITTER 3. ANODE 3. RESISTOR ADJUST 3. CATHODE<br>4. MT2 4. COLLECTOR 4. CATHODE 4. CATHODE 4. ANODE<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON10527D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: DPAK−3 6.10x6.54x2.28, 2.29P PAGE 2 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2011 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales 

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