# IGBT, N-Ch, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pins

![Product image](https://novapart.co/image/farnell:2748777RL/)

**URL**: https://novapart.co/products/FGB40T65SPD-F085/igbt-n-ch-80-a-2-v-267-w-650-to-263ab-3-pins
**SKU**: FGB40T65SPD-F085
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.6400
**Stock**: 1000+
**Lead Time**: 120 days (indicative)

## Description

DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:267W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263AB; No.

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 267W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263AB |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2748777RL/)

## IGBT - Field Stop, Trench **650 V, 40 A** 

## FGB40T65SPD-F085 

## **General Description** 

Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation. 

## **Features** 

- Low Saturation Voltage: VCE(sat) = 2.0 V (Typ.) @ IC = 40 A 

- 100% of the Parts are Dynamically Tested * 

- Short Circuit Ruggedness > 5 s @ 25°C 

- Maximum Junction Temperature : TJ = 175°C 

- Fast Switching 

- Tight Parameter Distribution 

- Positive Temperature Coefficient for Easy Parallel Operation 

- Copacked with Soft, Fast Recovery Diode 

- AEC−Q101 Qualified and PPAP Capable 

- This Device is Pb−Free and are RoHS Compliant 

## **www.onsemi.com** 

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C<br>G<br>E<br>COLLECTOR<br>(FLANGE)<br>> -<br>G C E<br>D [2] PAK−3 (TO−263, 3−LEAD)<br>CASE 418AJ<br>**----- End of picture text -----**<br>


- VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 20 Inductive Load 

## **Applications** 

## **MARKING DIAGRAM** 

- Onboard Charger 

- AirCon Compressor 

- PTC Heater 

- Motor Drivers 

- Other Automotive Power−train and Auxiliary Applications 

**==> picture [170 x 118] intentionally omitted <==**

**----- Start of picture text -----**<br>
ON ZXYYKK<br>FGB40T65<br>SPD<br>i<br>FGB40T65SPD = Specific Device Code<br>Z = Assembly Plant Code<br>XYY = 3−Digit Data Code<br>KK = 2−Digits Lot Run Traceability<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 8 of this data sheet. 

Publication Order Number: **FGB40T65SPD−F085/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **April, 2021 − Rev. 3** 

**FGB40T65SPD−F085** 

## **ABSOLUTE MAXIMUM RATINGS** 

|**Symbol**|**Description**|**Ratings**|**Unit**|
|---|---|---|---|
|VCES|Collector to Emitter Voltage|650|V|
|VGES|Gate to Emitter Voltage|±20|V|
||Transient Gate to Emitter Voltage|±30|V|
|IC|Collector Current<br>@ TC= 25°C|80|A|
||Collector Current<br>@ TC= 100°C|40|A|
|ICM|Pulsed Collector Current<br>(Note 1)|120|A|
|IF|Diode Forward Current<br>@ TC= 25°C|40|A|
||Diode Forward Current<br>@ TC= 100°C|20|A|
|IFM|Pulsed Diode Maximum Forward Current<br>(Note 1)|120|A|
|PD|Maximum Power Dissipation<br>@ TC= 25°C|267|W|
||Maximum Power Dissipation<br>@ TC= 100°C|134|W|
|SCWT|Short Circuit Withstand Time<br>@ TC= 25°C|5|�s|
|TJ|Operating Junction Temperature|−55 to +175|°C|
|Tstg|Storage Temperature Range|−55 to +175|°C|
|TL|Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds|300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by max. junction temperature 

## **ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) 

|**ELECTRIC**|**ELECTRIC**|**AL CHARACTERISTICS OF THE IGB**|**T**(TC= 25°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Symbol**||**Parameter**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
||BVCES|Collector to Emitter Breakdown Voltage|VGE= 0 V, IC= 1 mA|650|−|−|V|
||�BVCES<br>�TJ|Temperature Coefficient of Breakdown<br>Voltage|VGE= 0 V, IC= 1 mA|−|0.6|−|V/°C|
||ICES|Collector Cut−Off Current|VCE= VCES, VGE= 0 V|−|−|250|�A|
||IGES|G−E Leakage Current|VGE= VGES, VCE= 0 V|−|−|±400|nA|
|**ON CHARACTERISTICS**||||||||
|VGE(th)||G−E Threshold Voltage|IC= 40 mA, VCE= VGE|4.0|5.8|7.5|V|
|VCE(sat)||Collector to Emitter Saturation Voltage|IC= 40 A,VGE= 15 V|−|2.0|2.4|V|
||||IC= 40 A,VGE= 15 V, TC= 175°C|−|2.9|−|V|
|**DYNAMIC CHARACTERISTICS**||||||||
|Cies||Input Capacitance|VCE= 30 V,VGE= 0 V, f = 1 MHz|−|1520|−|pF|
|Coes||Output Capacitance||−|92|−|pF|
|Cres||Reverse Transfer Capacitance||−|15|−|pF|
|**SWITCHING CHARACTERISTICS**||||||||
|Td(on)||Turn−On Delay Time|VCC= 400 V, IC= 40 A, RG= 6�,<br>VGE= 15 V,<br>Inductive Load, TC= 25°C|−|18|−|ns|
|Tr||Rise Time||−|26|−|ns|
|Td(off)||Turn−Off Delay Time||−|35|−|ns|
|Tf||Fall Time||−|10|−|ns|
|Eon||Turn−On Switching Loss||−|0.97|−|mJ|
|Eoff||Turn−Off Switching Loss||−|0.28|−|mJ|
|Ets||Total Switching Loss||−|1.25|−|mJ|



**www.onsemi.com** 

**2** 

**FGB40T65SPD−F085** 

**ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) (continued) 

|**ELECTRIC**|**AL CHARACTERISTICS OF THE IGB**|**T**(TC= 25°C unless otherwise noted) (co|ntinued)||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|**SWITCHING CHARACTERISTICS**|||||||
|Td(on)|Turn−On Delay Time|VCC= 400 V, IC= 40 A, RG= 6�,<br>VGE= 15 V,<br>Inductive Load, TC= 175°C|−|14|−|ns|
|Tr|Rise Time||−|35|−|ns|
|Td(off)|Turn−Off Delay Time||−|38|−|ns|
|Tf|Fall Time||−|13|−|ns|
|Eon|Turn−On Switching Loss||−|1.61|−|mJ|
|Eoff|Turn−Off Switching Loss||−|0.47|−|mJ|
|Ets|Total Switching Loss||−|2.08|−|mJ|
|TSC|Short Circuit Withstand Time|VCC= 400 V, VGE= 15 V, RG= 10�|5|−|−|�s|
|Qg|Total Gate Charge|VCE= 400 V, IC= 40 A, VGE= 15 V|−|36|−|nC|
|Qge|Gate to Emitter Charge||−|12|−|nC|
|Qgc|Gate to Collector Charge||−|11|−|nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **ELECTRICAL CHARACTERISTICS OF THE DIODE** (TC = 25 ° C unless otherwise noted) 

|**ELECTRIC**|**AL CHARACTERISTICS OF THE D**|**IODE**(TC= 25°C unless otherwise noted)|**IODE**(TC= 25°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|VFM|Diode Forward Voltage|IF= 20 A|TC= 25°C|−|2.0|2.7|V|
||||TC= 175°C|−|1.8|−||
|Erec|Reverse Recovery Energy|IF= 20 A,<br>dIF/dt = 200 A/�s|TC= 175°C|−|51|−|�J|
|Trr|Diode Reverse Recovery Time||TC= 25°C|−|34|−|ns|
||||TC= 175°C|−|206|−||
|Qrr|Diode Reverse Recovery Charge||TC= 25°C|−|56|−|nC|
||||TC= 175°C|−|731|−||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|
|R�JC(IGBT)|Thermal Resistance, Junction to Case|−|0.56|°C/W|
|R�JC(Diode)|Thermal Resistance, Junction to Case|−|1.71|°C/W|
|R�JA|Thermal Resistance, Junction to Ambient|−|40|°C/W|



**www.onsemi.com** 

**3** 

**FGB40T65SPD−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

**Figure 1. Typical Output Characteristics** 

**Figure 2. Typical Output Characteristics** 

**Figure 3. Typical Output Characteristics** 

**Figure 4. Transfer Characteristic** 

**Figure 5. Typical Saturation Voltage** 

**Figure 6. Saturation Voltage vs. VGE Characteristics** 

**www.onsemi.com** 

**4** 

**FGB40T65SPD−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

**Figure 7. Saturation Voltage vs. VGE** 

**Figure 8. Saturation Voltage vs. VGE** 

**Figure 9. Capacitance Characteristics** 

**Figure 10. Gate Charge Characteristics** 

**Figure 11. SOA Characteristics** 

**Figure 12. Turn Off Switching SOA Characteristics** 

**www.onsemi.com** 

**5** 

**FGB40T65SPD−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

**Figure 13. Turn−on Characteristics vs. Gate Resistance** 

**Figure 14. Turn−off Characteristics vs. Gate Resistance** 

**Figure 15. Turn−on Characteristics vs. Collector Current** 

**Figure 16. Turn−off Characteristics vs. Collector Current** 

**Figure 17. Switching Loss vs. Gate Resistance** 

**Figure 18. Switching Loss vs. Collector Current** 

**www.onsemi.com** 

**6** 

**FGB40T65SPD−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

**Figure 19. Forward Characteristics** 

**Figure 20. Reverse Current** 

**Figure 21. Stored Charge** 

**Figure 22. Reverse Recovery Time** 

**Figure 23. Saturation Voltage vs. Case Temperature at Variant Current Level** 

**www.onsemi.com** 

**7** 

**FGB40T65SPD−F085** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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**----- Start of picture text -----**<br>
PDM<br>t1<br>| t2 aa<br>NOTES:<br>DUTY FACTOR: D = t 1/t2<br>PEAK TJ = P DM x Z JA x R JA [ + T] C<br>**----- End of picture text -----**<br>


**Figure 24. Transient Thermal Impedance of IGBT** 

**==> picture [144 x 67] intentionally omitted <==**

**----- Start of picture text -----**<br>
SSE Et PDM<br>t1<br>eee cl eee t2 |<br>ettt a NOTES: e e |<br>DUTY FACTOR: D = t 1/t 2<br>PEAK TJ = P DM x Z JA x R JA [ + T] C<br>**----- End of picture text -----**<br>


**Figure 25. Transient Thermal Impedance of Diode** 

## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Shipping**†|
|---|---|---|---|---|---|
|FGB40T65SPD|FGB40T65SPD−F085|D2PAK−3 (TO−263, 3−LEAD)<br>(Pb−Free)|−|−|800 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**8** 

## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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D [2] PAK−3 (TO−263, 3−LEAD)<br>CASE 418AJ<br>ISSUE F<br>SCALE 1:1<br>**----- End of picture text -----**<br>


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DATE 11 MAR 2021<br>**----- End of picture text -----**<br>


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XXXXXX = Specific Device Code<br>OP TI ON A L CONS T RUC TI ONS<br>A = Assembly Location<br>GENERIC MARKING DIAGRAMS* WL = Wafer Lot<br>Y = Year<br>WW = Work Week<br>XX AYWW W = Week Code (SSG)<br>XXXXXXXXX XXXXXXXXG XXXXXXXXG XXXXXX M = Month Code (SSG)<br>AWLYWWG AYWW  AKA XXYMW G = Pb−Free Package<br>AKA = Polarity Indicator<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present. Some products<br>IC Standard Rectifier SSG may not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON56370E Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: D [2] PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1<br>**----- End of picture text -----**<br>


ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2018 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative 

◊ 

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