# IGBT, 80 A, 1.9 V, 349 W, 600 V, TO-263AB, 3 Pins ![Product image](https://novapart.co/image/farnell:3253696/) **URL**: https://novapart.co/products/FGB40N60SM/igbt-80-a-19-v-349-w-600-to-263ab-3-pins **SKU**: FGB40N60SM **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €3.3100 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 349W | | Transistor Mounting | Surface Mount | | Transistor Case Style | TO-263AB | | Operating Temperature Max | 175°C | | Continuous Collector Current | 80A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 1.9V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3253696/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [70 x 9] intentionally omitted <==** **----- Start of picture text -----**
September 2013
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## **FGB40N60SM 600 V, 40 A Field Stop IGBT** ## **Features** - Maximum Junction Temperature : TJ =175[o] C - Positive Temperaure Co-efficient for Easy Parallel Operating - High Current Capability - Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A ## **General Description** Using novel field stop IGBT technology, Fairchild’s new series of field stop 2[nd] generation IGBTs offer the optimum performance for welder and PFC applications where low conduction and switching losses are essential. - High Input Impedance - Fast Switching - Tighten Parameter Distribution - RoHS Compliant - IR Reflow Only ## **Applications** - Welder, PFC **==> picture [145 x 79] intentionally omitted <==** **----- Start of picture text -----**
C
COLLECTOR
(FLANGE)
TO-263AB/D [2] -PAK
G fP E -
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## **Absolute Maximum Ratings** |**Symbol**|**Description**|**Ratings**|**Unit**| |---|---|---|---| |VCES|Collector to Emitter Voltage|600|V| |VGES|Gate to Emitter Voltage|± 20|V| ||Transient Gate to Emitter Voltage|± 30|V| |IC|Collector Current
@ TC= 25oC|80|A| ||Collector Current
@ TC= 100oC|40|A| |ICM(1)|Pulsed Collector Current|120|A| |PD|Maximum Power Dissipation
@ TC= 25oC|349|W| ||Maximum Power Dissipation
@ TC= 100oC|174|W| |TJ|Operating Junction Temperature|-55 to +175|oC| |Tstg|Storage Temperature Range|-55 to +175|oC| |TL|Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds|300|oC| **Notes:** 1: Repetitive rating: Pulse width limited by max. junction temperature **1** ©2011 Fairchild Semiconductor Corporation FGB40N60SM Rev. C2 www.fairchildsemi.com ## **Thermal Characteristics** |**Package Marking and Ordering Information**
**Symbol**
**Parameter**
**Typ.**
**Max.**
**Unit**
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
0.43
oC/W
RθJA
Thermal Resistance, Junction to Ambient
-
62.5
oC/W
**Device Marking**
**Device**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FGB40N60SM
FGB40N60SM
TO-263AB(D2-PAK)
-
-
50
~~iee~~| |---| |**Symbol**
~~———=a=~~|**Parameter**
~~———=a=~~|**Test Conditions**
~~———=a=~~|**Min.**
~~———=a=~~|**Typ.**
~~———=a=~~|**Max.**
~~———=a=~~|**Unit**
~~———=a=~~| |---|---|---|---|---|---|---| |**Off Characteristics**
~~———=a=~~||||||| |BVCES
~~———=a=~~|Collector to Emitter Breakdown Voltage V
~~———=a=~~|Collector to Emitter Breakdown Voltage VGE= 0V, IC= 250μA
~~———=a=~~|600
~~———=a=~~|-
~~———=a=~~|-
~~———=a=~~|V
~~———=a=~~| |ΔBVCES
ΔTJ
~~———=a=~~|Temperature Coefficient of Breakdown
Voltage
~~———=a=~~|VGE= 0V, IC= 250μA
~~———=a=~~|-
~~———=a=~~|0.6
~~———=a=~~|-
~~———=a=~~|V/oC
~~———=a=~~| |ICES
~~———=a=~~|Collector Cut-Off Current
~~———=a=~~|VCE= VCES, VGE= 0V
~~———=a=~~|-
~~———=a=~~|-
~~———=a=~~|250
~~———=a=~~|μA
~~———=a=~~| |IGES
~~———=a=~~|G-E Leakage Current
~~———=a=~~|VGE= VGES, VCE= 0V
~~———=a=~~|-
~~———=a=~~|-
~~———=a=~~|±400
~~———=a=~~|nA
~~———=a=~~| |**On Characteristics**
~~=a~~||||||| |VGE(th)
~~=a~~|G-E Threshold Voltage
~~=a~~|IC= 250μA, VCE= VGE
~~=a~~|3.5
~~=a~~|4.5
~~=a~~|6.0
~~=a~~|V
~~=a~~| |VCE(sat)
~~=a~~|Collector to Emitter Saturation Voltage
~~=a~~|IC= 40A,VGE= 15V
~~=a~~|-
~~=a~~|1.9
~~=a~~|2.3
~~=a~~|V
~~=a~~| |||IC= 40A,VGE= 15V,
TC= 175oC
~~=a~~|-
~~=a~~|2.1
~~=a~~|-
~~=a~~|V
~~=a~~| |**Dynamic Characteristics**||||||| |Cies
~~———-~~|Input Capacitance
~~———-~~|VCE= 30V,VGE= 0V,
f = 1MHz
~~———-~~|-
~~———-~~|1880
~~———-~~|-
~~———-~~|pF
~~———-~~| |Coes
~~———-~~|Output Capacitance
~~———-~~||-
~~———-~~|180
~~———-~~|-
~~———-~~|pF
~~———-~~| |Cres
~~———-~~|Reverse Transfer Capacitance
~~———-~~||-
~~———-~~|50
~~———-~~|-
~~———-~~|pF
~~———-~~| |**Switching Characteristics**
~~———-~~||||||| |td(on)
~~———-~~|Turn-On Delay Time
~~———-~~|VCC= 400V, IC= 40A,
RG= 6Ω, VGE= 15V,
Inductive Load, TC= 25oC
~~———-~~|-
~~———-~~|12
~~———-~~|16
~~———-~~|ns
~~———-~~| |tr
~~———-~~|Rise Time
~~———-~~||-
~~———-~~|20
~~———-~~|28
~~———-~~|ns
~~———-~~| |td(off)|Turn-Off Delay Time||-|92|120|ns| |tf|Fall Time||-|13|17|ns| |Eon|Turn-On Switching Loss||-|0.87|1.30|mJ| |Eoff|Turn-Off Switching Loss||-|0.26|0.34|mJ| |Ets|Total Switching Loss||-|1.13|1.64|mJ| |td(on)
~~==~~|Turn-On Delay Time
~~==~~|VCC= 400V, IC= 40A,
RG= 6Ω, VGE= 15V,
Inductive Load, TC= 175oC
B~~eare~~|-
~~eare~~|15
~~eare~~|-
~~eare~~|ns
~~eare~~| |tr
~~==~~|Rise Time
~~==~~||-
~~eare~~|22
~~eare~~|-
~~eare~~|ns
~~eare~~| |td(off)
~~==~~|Turn-Off Delay Time
~~==~~||-
~~eare~~|116
~~eare~~|-
~~eare~~|ns
~~eare~~| |tf
~~==~~|Fall Time
~~==~~||-
~~eare~~|16
~~eare~~|-
~~eare~~|ns
~~eare~~| |Eon
~~==~~|Turn-On Switching Loss
~~==~~||-
~~eare~~|0.97
~~eare~~|-
~~eare~~|mJ
~~eare~~| |Eoff
~~==~~|Turn-Off Switching Loss
~~==~~||-
~~eare~~|0.60
~~eare~~|-
~~eare~~|mJ
~~eare~~| |Ets
~~==~~|Total Switching Loss
~~==~~||-
~~eare~~|1.57
~~eare~~|-
~~eare~~|mJ
~~eare~~| **2** ©2011 Fairchild Semiconductor Corporation FGB40N60SM Rev. C2 www.fairchildsemi.com ## **Electrical Characteristics of the IGBT** (Continued) |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max**|**Unit**| |---|---|---|---|---|---|---| |Qg|Total Gate Charge|VCE= 400V, IC= 40A,
VGE= 15V|-|119|180|nC| |Qge|Gate to Emitter Charge||-|13|20|nC| |Qc|Gate to Collector Charge||-|58|90|nC| |g||||||| |||||||| **3** ©2011 Fairchild Semiconductor Corporation FGB40N60SM Rev. C2 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [463 x 579] intentionally omitted <==** **----- Start of picture text -----**
120 120
T C = 25oC 15V 20V 12V T C = 175oC 15V 20V 12V 10V
10080 fA 10V 10080 oT
60 60
= an 4
VGE = 8V VGE = 8V
40 40
20 20
0 0
0 2 4 6 0 2 4 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case
Characteristics Temperature at Variant Current Level
3.0
120
Common Emitter
Common Emitter VGE = 15V
100 r VTCGE = 25 = 15VoC LI 2.5 80A
80 | TC = 175oC oe
2.0
60
yA
40A
40 er
1.5
20 A I C = 20A
1.0
0 aeU2Gnen 25 50 75 100 125 150 175
0 1 2 3 4
Collector-Emitter Voltage, VCE [V] Case Temperature, TC [ [o] C]
Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
TC = 25 o C TC = 175oC
16 TT EL] 16 TT
12 12
al nlimeeee
8 Sai 8 aie
40A
80A 80A
4 Py 4 Shae 40A
IC = 20A
IC = 20A
0 —— 0 SS
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]
[A] [A]
C C
Collector Current, I Collector Current, I
[V]
CE
[A]
C
Collector Current, I
Collector-Emitter Voltage, V
[V]
CE [V]
V CE
,
Collector-Emitter Voltage
Collector-Emitter Voltage, V
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**4** ©2011 Fairchild Semiconductor Corporation FGB40N60SM Rev. C2 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [433 x 608] intentionally omitted <==** **----- Start of picture text -----**
Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics
4000 15
Common Emitter
Common Emitter
V GE = 0V, f = 1MHz TC = 25 o C 400V
3000 TC = 25oC 12 VCC = 200V
300V
9
Cies
2000
6
1000 C oes 3
ee Cres
0 PSRSSN 0 Fe
0.1 1 10 30 0 40 80 120
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]
Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
100 1000
t r td(off)
100
td(on)
10 t f
Common Emitter
VCC = 400V, VGE = 15V 10 Common EmitterVCC = 400V, VGE = 15V
I C = 40A IC = 40A
TC = 25oC TC = 25 o C
TC = 175oC TC = 175oC
1 AE) 1 Ar
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance, RG [ Ω ] Gate Resistance, RG [ Ω ]
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
1000
5
Common Emitter
VGE = 15V, RG = 6 Ω
T C = 25oC
100 Bane T C = 175oC
Eon tr
1
E off Common Emitter
V CC = 400V, V GE = 15V 10 td(on)
I C = 40A
T C = 25 o C
TC = 175oC
0.1 A.) 1 ST
0 10 20 30 40 50 20 30 40 50 60 70 80
Gate Resistance, RG [ Ω ] Collector Current, IC [A]
[V]
GE
Capacitance [pF] Gate-Emitter Voltage, V
Switching Time [ns] Switching Time [ns]
Switching Loss [mJ] Switching Time [ns]
**----- End of picture text -----**
**5** ©2011 Fairchild Semiconductor Corporation FGB40N60SM Rev. C2 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [471 x 596] intentionally omitted <==** **----- Start of picture text -----**
Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.
Collector Current Collector Current
1000 6
td(off)
100
1 E on
rd) ss ae | ——-
TTT)» t f (Ee
E off
10 Common Emitter Common Emitter
V GE = 15V, R G = 6 Ω V GE = 15V, R G = 6 Ω
T C = 25oC T C = 25 o C
TC = 175oC TC = 175oC
1 ety:fii.) 0.1 aneErie
20 30 40 50 60 70 80 20 30 40 50 60 70 80
Collector Current, IC [A] Collector Current, IC [A]
Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics
100 300
90 =i Vcc = 600 V Load Current ee 100 Pe ee 10 μ s
80 : peak of square wave 100 μ s
Duty cycle : 50% 1ms
70 Tc = 100 o C 10 10 ms
60 Power Dissipation : 174W DC
50 =Ha Tc = 100oC | 1 PSSei
40 Pre NS aot Sonsa
30 *Notes:
0.1
20 eT NN 1. TC = 25 [o] C
10 2. TJ = 175 [o] C
3. Single Pulse
0 etae D 0.01 fsee
1 10 100 1000
1k 10k 100k 1M
Switching Frequency, f [Hz] Collector-Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
1
0.5
0.1 0.2 eeou Ha
0.1
0.05
0.02
0.01 0.01 single pulse PDM
t1
t2
Duty Factor, D = t1/t2
[Peak T] [j] [ = Pdm x Zthjc + T] C
0.001 pape ae
10-5 10-4 10-3 10-2 10-1 100
Rectangular Pulse Duration [sec]
Switching Time [ns] Switching Loss [mJ]
Collector Current, I [A]C Collector Current, I [A]c
Thermal Response [Zthjc]
**----- End of picture text -----**
**6** ©2011 Fairchild Semiconductor Corporation FGB40N60SM Rev. C2 www.fairchildsemi.com ## **Mechanical Dimensions** **==> picture [195 x 5] intentionally omitted <==** **----- Start of picture text -----**
|
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## **Figure 18. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT** _Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ _Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:_ _http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002_ Dimensions in Millimeters **7** ©2011 Fairchild Semiconductor Corporation FGB40N60SM Rev. C2 www.fairchildsemi.com ## **TRADEMARKS** The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. 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Semiconductor reserves the right to make changes at anytime without notice to improve design.| |No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at anytime without notice to improve the design.| |Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
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